CN107170866A - A kind of multispectral light emitting diode construction - Google Patents
A kind of multispectral light emitting diode construction Download PDFInfo
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- CN107170866A CN107170866A CN201710284866.3A CN201710284866A CN107170866A CN 107170866 A CN107170866 A CN 107170866A CN 201710284866 A CN201710284866 A CN 201710284866A CN 107170866 A CN107170866 A CN 107170866A
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- quantum well
- light emitting
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- multiple quantum
- multispectral
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- 238000010276 construction Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 9
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 238000001228 spectrum Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 239000003086 colorant Substances 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000011324 bead Substances 0.000 abstract description 5
- 239000008187 granular material Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000009877 rendering Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 241000907663 Siproeta stelenes Species 0.000 description 2
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000005976 Citrus sinensis Nutrition 0.000 description 1
- 240000002319 Citrus sinensis Species 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of multispectral light emitting diode construction, comprising：Substrate and semiconductor laminated, this is semiconductor laminated to comprise at least one layer of n-type semiconductor layer, one layer of p-type semiconductor layer and multispectral luminous multiple quantum well layer；It is characterized in：The multispectral luminous multiple quantum well layer is made up of the multiple quantum well light emitting unit of two groups or three groups different stacked arrangements of SQW energy gap, can be while the light of two or three of wavelength of outgoing, wavelength difference between the light of any two kinds of wavelength is λ, wherein 100nm >=λ >=10nm；The periodic structure that the multiple quantum well light emitting unit is made up of quantum well layer and quantum barrier layer, periodicity is k；The emission wavelength of the multiple quantum well light emitting unit determines that emission wavelength range is 380nm by its SQW energy gap -700nm.The present invention can direct outgoing be multispectral in single-chip, and five primary colours white lights can be made to encapsulate chip used granule number and declined to a great extent, very big design window is provided to the circuit design of lamp bead, optical design and mixed light.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, more particularly, to a kind of multispectral light emitting diode construction.
Background technology
Light emitting diode（LED）People are obtained with distinguishing features such as its energy-conserving and environment-protective, reliability height widely to pay close attention to and grind
Study carefully.LED illumination technology is classified as national development by the today increasingly aggravated in energy crisis and environmental crisis, numerous countries and regions
Strategy.By the research and effort of more than 20 years, LED growth technologies, LED chip manufacturing technology and LED encapsulation technologies
Obtain rapid progress so that it is many that LED is widely used in display screen, indicator lamp, Landscape Lighting, auto lamp, general illumination etc.
Field.
At present, white light for illumination LED is generally made by the way of " blue-ray LED+fluorescent material ", the white light of this form
LED has the following disadvantages：1st, it is difficult to coordinate between colour rendering index, colour temperature and luminous efficiency；2nd, the limited conversion efficiency of fluorescent material
It has lost part LED luminous efficiency.Therefore, there has been proposed the technical scheme of the multi-colored led synthesis white light of use, such as incite somebody to action " red+
White light LEDs are made in five primary-color LED chip packages of yellow+green+blue or green+indigo plant " together.This white light LEDs will be expected to obtain low colour temperature, height
The white light source of colour rendering index, specular removal.If it is white that the LED chip of five kinds of colors directly is packaged into foregoing five primary colours of acquisition
Light, then many using number of chips during lamp package, one to lamp bead circuit, optical design brings difficulty, secondly light
Mixing uniformity also more difficult regulation in space.
The content of the invention
It is an object of the invention to provide a kind of multispectral light emitting diode construction, it can in single-chip direct outgoing it is many
Spectrum（The light of two kinds or three kinds wavelength）, so that five primary colours white lights encapsulate chip used granule number and declined to a great extent, to lamp bead
Circuit design, optical design and mixed light provide very big design window.
The object of the present invention is achieved like this：
A kind of multispectral light emitting diode construction, comprising：Substrate；It is laminated in semiconductor laminated on the substrate, the semiconductor
Lamination is sandwiched in n-type semiconductor layer, p-type semiconductor layer including at least one layer of n-type semiconductor layer, one layer of p-type semiconductor layer and one layer
Between multispectral luminous multiple quantum well layer；It is characterized in：The multispectral luminous multiple quantum well layer by SQW energy gap not
The multiple quantum well light emitting unit composition of two groups or three groups same stacked arrangements, the multiple quantum well light emitting unit energy of two groups of stacked arrangements
While the light of two kinds of wavelength of outgoing, the multiple quantum well light emitting unit of three groups of stacked arrangements can be while the light of three kinds of wavelength of outgoing, appoints
Wavelength difference between the light of two kinds of wavelength of meaning is λ, wherein:100nm≥λ≥10nm；The multiple quantum well light emitting unit is by measuring
The periodic structure of sub- well layer and quantum barrier layer composition, periodicity is k, wherein:10≥k≥1；The multiple quantum well light emitting unit
Emission wavelength determines that emission wavelength range is 380nm by the SQW energy gap of multiple quantum well light emitting unit -700nm.
Luminescent spectrum is built by changing SQW forbidden band broadband, quantum well layer and the quantum of the multiple quantum well light emitting unit
Periodicity, quantum well layer thickness, the quantum barrier layer thickness of layer periodic structure are adjusted.
It is described it is semiconductor laminated be indium-gallium-aluminum-nitrogen（InxGayAl1-x-yN, 0≤x≤1,0≤y≤1）Or indium gallium aluminium phosphorus
（InxGayAl1-x-yP, 0≤x≤1,0≤y≤1）One kind in luminescent material.
The substrate is silicon (Si), sapphire (Al2O3), carborundum (SiC), GaAs（GaAs）, aluminium nitride（AlN）、
Gallium phosphide（GaP）, zinc oxide（ZnO）And one kind in gallium nitride (GaN).
The characteristics of multispectral light emitting diode construction provided by the present invention be can directly outgoing in 380nm -700nm
Wave-length coverage is interior and maximum, minimum wavelength difference is multispectral luminous less than 100nm（The light of two kinds or three kinds wavelength）, so that
Five primary colours white lights encapsulate chip used granule number and declined to a great extent, and the circuit design of lamp bead, optical design and mixed light are provided
Very big design window, for example sent out using single-chip " green+blue or green+blue " light LED and single-chip send out " red+yellow " light LED this two
Planting chip portfolio just can realize five primary colours white lights；Meanwhile, multispectral light emitting diode construction provided by the present invention, the spirit of its spectrum
Work is changeable, can meet different-colour, the demand of colour rendering index white light, for example, send out single-chip the LED structure of " green+blue or green+blue " light,
It can build thick by adjusting green glow, green light, the energy gap of three kinds of multiple quantum well light emitting units of blue light, quantum well thickness, quantum
Degree, SQW build putting in order for the blue three color multiple quantum well light emitting units of periodicity and malachite, so as to realize blue three colors of malachite
The regulation of light spectrum relative intensity.
Therefore, the present invention have can in single-chip direct outgoing it is multispectral（The light of two kinds or three kinds wavelength）, make five
Primary colours white light encapsulates that chip used granule number declines to a great extent, spectrum is flexible and changeable, the circuit design to lamp bead, optical design and
The advantages of mixed light provides very big design window.
Brief description of the drawings
Fig. 1 is profile of the invention；
The luminescent spectrum schematic diagram of multispectral light emitting diode construction in Fig. 2 embodiments 1；
The luminescent spectrum schematic diagram of multispectral light emitting diode construction in Fig. 3 embodiments 2；
Wherein, 100-substrate, 200-n-type semiconductor layer, 300-multispectral luminous multiple quantum well layer, 310-MQW hair
Light unit, 320-multiple quantum well light emitting unit, 330-multiple quantum well light emitting unit, 311-quantum well layer, 321-quantum
Well layer, 331-quantum well layer, 312-quantum barrier layer, 322-quantum barrier layer, 332-quantum barrier layer, 400-p-type semiconductor
Layer, 500-semiconductor laminated.
Embodiment
With reference to embodiment and compare accompanying drawing the invention will be further described.
Embodiment 1：
Substrate 100 uses silicon（Si）Substrate, semiconductor laminated 500 use InxGayAl1-x-yN material systems, n-type semiconductor layer
200 be to mix Si concentration 2 × 1018─5×1018 cm-3GaN；P-semiconductor layer 400 is to mix Mg concentration 1 × 1020cm-3GaN；It is many
Spectral luminescence multiple quantum well layer 300 stacks gradually arrangement group from bottom to top by three groups of multiple quantum well light emitting units 310,320 and 330
Into wherein multiple quantum well light emitting unit 310 is built by the SQW 311 and quantum in 5 cycles and 312 constituted, and SQW 311 lights ripple
A length of 450-460nm blue light, multiple quantum well light emitting unit 320 is built 322 by the SQW 321 and quantum in 2 cycles and constituted, and measures
The sub- emission wavelength of trap 321 be 480-490nm green light, multiple quantum well light emitting unit 330 by 1 cycle SQW 331 and amount
Son is built 332 and constituted, and the emission wavelength of SQW 331 is 520-530nm green glow；Multispectral light emitting diode knot in the present embodiment
The spectrum that the luminescent spectrum of structure synthesizes for green, blue or green, blue three color light, its spectrum is adjustable as spectrum as shown in Figure 2, while not only
It is limited to the spectrum in Fig. 2.
Embodiment 2：
Substrate 100 uses GaAs（GaAs）Substrate, semiconductor laminated 500 use InxGayAl1-x-yP material systems；N-type half
Conductor layer 200 is n-type indium gallium aluminium phosphorus（AlxGayIn1-x-yP, 1 >=x >=0,1 >=y >=0）；P-semiconductor layer 400 is p-type indium gallium aluminium phosphorus
（AlxGayIn1-x-yP, 1 >=x >=0,1 >=y >=0）；Multispectral luminous multiple quantum well layer 300 is by two groups of multiple quantum well light emitting units
310 and 320 stack gradually and rearrange, and wherein multiple quantum well light emitting unit 310 is built by the SQW 311 and quantum in 5 cycles
312 composition, the emission wavelength of SQW 311 be 590-600nm orange light, multiple quantum well light emitting unit 320 by 2 cycles quantum
Trap 321 and quantum are built 322 and constituted, and the emission wavelength of SQW 321 is 620-630nm feux rouges；Multispectral hair in the present embodiment
The luminescent spectrum of optical diode structure is the photosynthetic spectrum of blood orange dichromatism, and its spectrum is adjustable as spectrum as shown in Figure 3, together
When be not limited only to spectrum in Fig. 3.
Claims (4)
1. a kind of multispectral light emitting diode construction, comprising：Substrate；It is laminated in semiconductor laminated on the substrate, this is partly led
Body lamination is sandwiched in n-type semiconductor layer, p-type semiconductor including at least one layer of n-type semiconductor layer, one layer of p-type semiconductor layer and one layer
Multispectral luminous multiple quantum well layer between layer；It is characterized in that：The multispectral luminous multiple quantum well layer is by SQW forbidden band
The multiple quantum well light emitting unit composition of two groups or three groups different stacked arrangements of width, the multiple quantum well light emitting of two groups of stacked arrangements
Unit can two kinds of wavelength of outgoing simultaneously light, the multiple quantum well light emitting units of three groups of stacked arrangements can three kinds of wavelength of outgoing simultaneously
Wavelength difference between light, the light of any two kinds of wavelength is λ, wherein:100nm≥λ≥10nm；The multiple quantum well light emitting unit is
The periodic structure being made up of quantum well layer and quantum barrier layer, periodicity is k, wherein:10≥k≥1；The multiple quantum well light emitting list
The emission wavelength of member determines that emission wavelength range is 380nm by the SQW energy gap of multiple quantum well light emitting unit-
700nm。
2. multispectral light emitting diode construction according to claim 1, it is characterised in that：Luminescent spectrum is described by changing
Periodicity, the quantum well layer in the SQW forbidden band broadband of multiple quantum well light emitting unit, quantum well layer and quantum barrier layer periodic structure
Thickness, quantum barrier layer thickness are adjusted.
3. multispectral light emitting diode construction according to claim 1, it is characterised in that：It is described it is semiconductor laminated be indium gallium
Aluminium nitrogen（InxGayAl1-x-yN, 0≤x≤1,0≤y≤1）Or indium gallium aluminium phosphorus（InxGayAl1-x-yP, 0≤x≤1,0≤y≤1）It is luminous
One kind in material.
4. multispectral light emitting diode construction according to claim 1, it is characterised in that：The substrate be silicon, sapphire,
One kind in carborundum, GaAs, aluminium nitride, gallium phosphide, zinc oxide and gallium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710284866.3A CN107170866A (en) | 2017-04-27 | 2017-04-27 | A kind of multispectral light emitting diode construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710284866.3A CN107170866A (en) | 2017-04-27 | 2017-04-27 | A kind of multispectral light emitting diode construction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107170866A true CN107170866A (en) | 2017-09-15 |
Family
ID=59813600
Family Applications (1)
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| CN201710284866.3A Pending CN107170866A (en) | 2017-04-27 | 2017-04-27 | A kind of multispectral light emitting diode construction |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111244237A (en) * | 2020-01-15 | 2020-06-05 | 圆融光电科技股份有限公司 | Ultraviolet LED epitaxial structure and growth method thereof |
| CN111613702A (en) * | 2020-05-22 | 2020-09-01 | 开发晶照明（厦门）有限公司 | Light emitting diode and light emitting module |
| CN111834498A (en) * | 2019-04-19 | 2020-10-27 | 开发晶照明（厦门）有限公司 | Epitaxial light-emitting structure of light-emitting diode |
| CN112018219A (en) * | 2020-09-04 | 2020-12-01 | 广东省科学院半导体研究所 | Ultraviolet light-emitting chip, preparation method and application thereof |
| CN112217096A (en) * | 2020-12-14 | 2021-01-12 | 陕西源杰半导体技术有限公司 | Semiconductor device and method for manufacturing the same |
| CN112234435A (en) * | 2020-12-14 | 2021-01-15 | 陕西源杰半导体技术有限公司 | Semiconductor device and method for manufacturing the same |
| CN112271239A (en) * | 2020-10-23 | 2021-01-26 | 开发晶照明（厦门）有限公司 | Light emitting diode and backlight display device |
| CN113036007A (en) * | 2021-02-26 | 2021-06-25 | 开发晶照明（厦门）有限公司 | Light emitting diode chip |
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| CN111834498A (en) * | 2019-04-19 | 2020-10-27 | 开发晶照明（厦门）有限公司 | Epitaxial light-emitting structure of light-emitting diode |
| CN111244237A (en) * | 2020-01-15 | 2020-06-05 | 圆融光电科技股份有限公司 | Ultraviolet LED epitaxial structure and growth method thereof |
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| CN112234435B (en) * | 2020-12-14 | 2021-03-09 | 陕西源杰半导体技术有限公司 | Semiconductor device and method for manufacturing the same |
| CN112234435A (en) * | 2020-12-14 | 2021-01-15 | 陕西源杰半导体技术有限公司 | Semiconductor device and method for manufacturing the same |
| CN112217096A (en) * | 2020-12-14 | 2021-01-12 | 陕西源杰半导体技术有限公司 | Semiconductor device and method for manufacturing the same |
| CN113036007A (en) * | 2021-02-26 | 2021-06-25 | 开发晶照明（厦门）有限公司 | Light emitting diode chip |
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