WO2018019036A1 - Patterned substrate and preparation method therefor - Google Patents

Patterned substrate and preparation method therefor Download PDF

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Publication number
WO2018019036A1
WO2018019036A1 PCT/CN2017/087714 CN2017087714W WO2018019036A1 WO 2018019036 A1 WO2018019036 A1 WO 2018019036A1 CN 2017087714 W CN2017087714 W CN 2017087714W WO 2018019036 A1 WO2018019036 A1 WO 2018019036A1
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WIPO (PCT)
Prior art keywords
pattern
patterned substrate
etching
bottom edge
adjacent
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PCT/CN2017/087714
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French (fr)
Chinese (zh)
Inventor
寻飞林
张家宏
蔡吉明
林兓兓
李政鸿
曾双龙
吴洪浩
徐志军
李毕庆
Original Assignee
厦门三安光电有限公司
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Publication of WO2018019036A1 publication Critical patent/WO2018019036A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Definitions

  • the present invention relates to the field of semiconductor fabrication technology, and in particular to a patterned substrate and a method for fabricating the same.
  • a patterned substrate is formed on a planar substrate by a process such as photomasking, etching, or the like to form a substrate having a patterned surface.
  • the patterned substrate can effectively reduce the dislocation density of the epitaxial structure layer, improve the crystal quality and uniformity of the epitaxial material, and thereby improve the internal quantum luminous efficiency of the LED; on the other hand, the array pattern structure increases the light. Scattering changes the optical line of the LED, which in turn increases the efficiency of the external quantum light.
  • the gap between the bases of 0 and 120) (for example, between 111 and 122) is too small, that is, the C-plane is too small, so that the patterned substrate is used to grow the epitaxial layer, and excellent crystal quality cannot be obtained.
  • increasing the gap between adjacent patterns for example, 111 and 122
  • it is often only possible to properly sacrifice the graphic base and height for example, 110 and 120
  • the present invention provides a patterned substrate and a method for fabricating the same, which uses a process of two development lithography to obtain a pattern suitable for epitaxial growth while increasing the height of the pattern and the area of the substrate. Substrate.
  • a method for preparing a patterned substrate comprising the following steps: [0006] Sl, providing a basic substrate;
  • the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micrometers and less than or equal to 0.2 micrometers.
  • the depth of the etched portion is 1/40 to 1/8 of the radius of the circumscribed circle of the bottom of the first pattern.
  • the number of bottom edge etched portions of the second pattern in the step S3 is ⁇ 3.
  • the number of the bottom edge etching portions of the second pattern is 3 to 12.
  • the etching portion has a triangular shape or an arc shape that is recessed toward the center of the second pattern.
  • the first etching is the same as or different from the second etching method.
  • the first pattern is a triangular cone shape, a pointed cone shape, a polyhedral cone shape or a yurt type.
  • a patterned substrate having a first pattern of periodic arrays, the distance at any position of the bottom edge of the adjacent first pattern being greater than or equal to 0, less than or equal to 0.1 micron
  • the first pattern is etched to obtain a second pattern, wherein: the bottom edge of the second pattern has a plurality of etched portions, and the depth of the etched portion is 1 of a circumscribed circle radius of the first pattern base /40 ⁇ 1/8, such that the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micron to facilitate the growth of the subsequent epitaxial layer, and in order to further optimize the performance of the patterned substrate, the present invention further selects The distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micron and less than or equal to 0.2 micron.
  • the number of the second pattern etching portions is ⁇ 3, and the number of the bottom edge etching portions of the second pattern is further selected to be 3 to 12.
  • the present invention firstly obtains a patterned substrate having a first pattern by using a first etching process, wherein adjacent edges of adjacent patterns in the patterned substrate having the first pattern are connected or the minimum gap is less than or equal to 0.1 Micron, compared with the same substrate area and the same number of patterns in the prior art, the pattern base of the present invention is larger, thereby increasing the reflective area of the pattern and improving the luminous efficiency of the subsequently formed light emitting diode.
  • a second etching process is used to etch away portions of the pattern of the adjacent pattern or the bottom surface with a minimum gap of less than or equal to 0.1 micron, so that the spacing between the bottom edges of adjacent patterns is greater than 0.1 micron at any distance, because the test results prove
  • the minimum spacing between adjacent patterns of the patterned substrate is greater than 0.1 micron, an epitaxial layer having a better crystal quality can be grown thereon.
  • FIG. 1 is a schematic view of a prior art patterned substrate.
  • FIG. 2 is a schematic flow chart of a preparation process of a patterned substrate according to an embodiment of the present invention.
  • 3 to 6 are schematic diagrams showing the pattern structure of each step in the preparation of the patterned substrate according to Embodiment 1 of the present invention.
  • FIG. 7 to 9 are schematic diagrams showing the pattern structure of each step in the preparation of the patterned substrate according to Embodiment 2 of the present invention.
  • Sl as shown in FIG. 3, provides a basic substrate 100; the substrate 100 material may be sapphire, silicon, silicon carbide, gallium nitride, or the like.
  • a photoresist is coated on the surface of the base substrate 100, and exposed after the photolithography process. Etching the region, followed by a first etching process, to obtain a patterned substrate having a periodic pattern of the first pattern 200, which may be triangular pyramidal, tapered or polyhedral, in this embodiment It is preferably a triangular pyramid.
  • the distance between the bottom edge of each first pattern 200 and the bottom edge of the adjacent pattern is greater than or equal to 0, less than or equal to 0.1 micron; as shown in FIG. 4, the bottom edge of the pattern 210, particularly the bottom edge corner 211 and The distance between the bottom edge 222 of the adjacent pattern 220 is less than or equal to 0.1 micrometer.
  • the embodiment defines one of the patterns as 210 and the adjacent pattern as 220. In practice, the structures of the patterns 210 and 220 are the same. And even connected thereto, in this embodiment, the distance between the two is 0, that is, directly connected; because the adjacent patterns are relatively close, the basic substrate in the same area is compared with the existing patterned substrate. Surface, when the number of patterns is the same, the base of each pattern is larger or the height of the pattern is larger
  • a photoresist is coated on the patterned substrate having the first pattern 200 in step S2, and a region to be etched (black portion) is exposed after the photolithography process; Performing a second etching process to etch each of the bottom edges of the pattern having a distance of less than 0.1 micrometer from the edge of the bottom surface of the adjacent pattern, as shown in FIG. 6, to obtain a patterned substrate having a periodic pattern of the second pattern 200'; The bottom edge of the second pattern 200 ′ forms a plurality of etched portions 21 by a second etching.
  • the depth of the etched portion 21 is 1/40 to 1/8 of the radius of the circumscribing circle at the bottom of the first pattern 200, so that the distance at any position of the bottom edge of the adjacent second pattern 200' is greater than 0.1 micron to facilitate the subsequent epitaxial layer.
  • the number of etched portions of each of the second patterns 200 ′ is ⁇ 3, and the etched portions are preferably three in the embodiment, and the bottom edges of any of the second patterns 200 ′ and the bottom edges of the adjacent second patterns 200 ′ are arbitrary.
  • the spacing is greater than 0.1 micron, that is, in FIG.
  • the second pattern 21 (any position of the ⁇ and the bottom edge 222 ′ of the adjacent second pattern 220 ′ are both greater than 0.1 ⁇ m, and in order to ensure the beneficial effects of the present invention
  • the second pattern 21 is further selected (the arbitrary position of the ⁇ and the bottom edge 222 ′ of the adjacent second pattern 220 ′ are both greater than 0.1 ⁇ m and less than or equal to 0.2 ⁇ m; the test results show that when the adjacent pattern is arbitrary Where the distance is greater than 0.1 micron ⁇ , the epitaxial layer ⁇ is grown thereon, and a better amount of crystal quality can be obtained; and the spacing of adjacent patterns is less than or equal to 0.2 micron ⁇ can obtain good crystal quality.
  • the remaining base area of the base of the patterned pattern after the second etching is still larger than the pattern base obtained by the prior art, that is, the pattern base of the present invention is present under the premise of the same substrate area, the same number of patterns, and the same adjacent pattern pitch.
  • the technical pattern base is large, The reflective area is increased to increase the luminous efficiency of the resulting device.
  • the two etching methods of the present invention are the same or different, and are dry etching, wet etching, or etching of a dry method and a wet method.
  • the two etchings are selected by wet etching, and the desired patterned substrate having the second pattern 200' is formed by controlling parameters such as solution composition, etching temperature, and etching time.
  • a patterned substrate is obtained by the method of the present invention, including a base substrate 100, and a first pattern arranged in an array is formed on the surface of the base substrate 100. 210 and 220, and etching the first patterns 210 and 220 to obtain a second pattern 21 ( ⁇ , 220 / , wherein each of the second patterns 200 ′ has a bottom edge etch portion 21 of three or more, and this embodiment selects the second The number of the bottom edge etching portions of the pattern 21 ( ⁇ , 2 20 / is 3 to 12), and the etching portion depth is 1/40 to 1/8 of the radius of the circumscribed circle of the first pattern 210; The distance between the bottom edge 222' and any position of the bottom corner 21 of the adjacent pattern is greater than 0.1 micron to facilitate the growth of the subsequent epitaxial layer.
  • the difference between the embodiment and the embodiment 1 is that the first pattern 300 on the surface of the base substrate 100 in the embodiment is obtained by dry etching, and the preferred pattern is a yurt type, and the bottom edge of each first pattern
  • the distance from the bottom edge of the adjacent first pattern is 0 to 0.1 ⁇ m; as shown in FIG. 7, the distance between the bottom edge 311 of the first pattern 310 and the bottom edge 321 of the adjacent first pattern 320 is less than or equal to 0.1 ⁇ m.
  • the base of each pattern is larger when the number of patterns is the same on the surface of the base substrate 100 of the same area as compared with the existing patterned substrate.
  • a second etching is then performed by dry etching to etch the edge of the bottom surface of the first pattern 300 from the edge of the bottom surface of the adjacent first pattern 300 by less than or equal to 0.1 ⁇ m, i.e., the etched portion. 311 and 321 as shown in Fig. 8, a patterned substrate having the second patterns 31 ( ⁇ and 320' having the etched portions 31 and 32 is obtained as shown in Fig. 9.
  • the second pattern having the etched portions 31 and 32 therein In the patterned substrate of 31 ( ⁇ and 320 ', the depth of each etched portion is 1/40 to 1/8 of the radius of the circumscribed circle of the first pattern 310 and 320, respectively; to ensure the bottom edge of each pattern and the adjacent pattern
  • the spacing between the bottom edges of the bottom surface is greater than 0.1 ⁇ m. Further, the distance between adjacent second patterns is less than or equal to 0.2 ⁇ m for the same reason as described in Embodiment 1.
  • the same is formed by controlling gas concentration, gas flow rate, radio frequency power and the like.
  • the desired bottom edge has a patterned substrate with an etched portion pattern.

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Abstract

A patterned substrate and a preparation method therefor. By using two-time development and lithography technologies, the patterned substrate suitable for epitaxial growth is obtained while the pattern height and the base area are increased. A specific technical solution comprises: S1, providing a basic substrate (100); S2,etching the basic substrate (100) for a first time, so as to obtain a patterned substrate of first patterns (200) having a periodic array, the distance between any positions of the bottom edges of the neighboring first patterns (200) being greater than or equal to 0 and less than or equal to 0.1 micrometer; and S3, etching the patterned substrate in step S2 for a second time, so as to obtain a patterned substrate of second images (200') having a periodic array, a plurality of etching portions (211') being formed on bottom edges of the second images (200') by means of the second etching, and the distance between any positions of the bottom edges of the neighboring second images (200') being greater than 0.1 micrometer, so as to facilitate subsequent epitaxial layer growth.

Description

一种图形化衬底及其制备方法 技术领域  Graphic substrate and preparation method thereof
[0001] 本发明涉及半导体制备技术领域， 具体为一种图形化衬底及其制备方法。  [0001] The present invention relates to the field of semiconductor fabrication technology, and in particular to a patterned substrate and a method for fabricating the same.
背景技术  Background technique
[0002] 图形化衬底是在一平面衬底上利用光罩、 刻蚀等工艺， 形成具有图形化表面的 衬底。 图形化衬底一方面能够有效降低外延结构层的位错密度， 提高外延材料 的晶体质量和均匀性， 进而能提高发光二极管的内量子发光效率； 另一方面， 由于阵列图案结构增加了光的散射， 改变了发光二极管的光学线路， 进而提升 了外量子出光效率。  [0002] A patterned substrate is formed on a planar substrate by a process such as photomasking, etching, or the like to form a substrate having a patterned surface. On the one hand, the patterned substrate can effectively reduce the dislocation density of the epitaxial structure layer, improve the crystal quality and uniformity of the epitaxial material, and thereby improve the internal quantum luminous efficiency of the LED; on the other hand, the array pattern structure increases the light. Scattering changes the optical line of the LED, which in turn increases the efficiency of the external quantum light.
技术问题  technical problem
[0003] 在现有的图形化衬底中， 为了得到较好的取光效果， 希望获得底座及高度均较 大的图案， 而由于在图案的制备中蚀刻方向与衬底的晶体走向一致， 图案的底 座和高度通常是通过控制蚀刻吋间等参数获得， 但实验发现， 参看附图 1， 现有 技术制备具有较大底座和高度的图形吋， 如图 勺右部分会使相邻图形 （例如 u [0003] In the existing patterned substrate, in order to obtain a better light extraction effect, it is desirable to obtain a pattern having a larger base and a height, and since the etching direction is consistent with the crystal orientation of the substrate in the preparation of the pattern, The base and height of the pattern are usually obtained by controlling parameters such as etching the turns, but it has been found experimentally that, with reference to Figure 1, the prior art produces a pattern 较大 having a larger base and height, and the right part of the figure will cause adjacent patterns ( For example u
0与 120) 的底座间隙 （例如 111与 122之间） 过小， 即 C面过少， 从而使图形化衬 底用于生长外延层吋无法获得优良的晶体质量。 参看图 1的左部分， 因此为了平 衡晶体质量与取光效果， 增加相邻图案之间的间隙 （例如 111与 122) ， 往往只 能适当牺牲图形底座和高度 （例如 110与 120) ， 从而无法得到大底座图形的图 形化衬底。 The gap between the bases of 0 and 120) (for example, between 111 and 122) is too small, that is, the C-plane is too small, so that the patterned substrate is used to grow the epitaxial layer, and excellent crystal quality cannot be obtained. Referring to the left part of Fig. 1, in order to balance the crystal quality and the light extraction effect, increasing the gap between adjacent patterns (for example, 111 and 122), it is often only possible to properly sacrifice the graphic base and height (for example, 110 and 120), thereby failing to A patterned substrate with a large base pattern is obtained.
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0004] 为了解决上述问题， 本发明提供了一种图形化衬底及其制备方法， 使用两次显 影光刻的工艺， 在增加图形高度及底座面积的同吋获得适于外延生长的图形化 衬底。  In order to solve the above problems, the present invention provides a patterned substrate and a method for fabricating the same, which uses a process of two development lithography to obtain a pattern suitable for epitaxial growth while increasing the height of the pattern and the area of the substrate. Substrate.
[0005] 本发明提供的具体技术方案为： 一种图形化衬底的制备方法， 其特征在于， 所 述方法包括如下步骤： [0006] Sl、 提供一基本衬底； The specific technical solution provided by the present invention is as follows: A method for preparing a patterned substrate, the method comprising the following steps: [0006] Sl, providing a basic substrate;
[0007] S2、 对所述基本衬底进行第一次蚀刻， 得到具有周期性阵列的第一图案的图形 化衬底， 所述相邻第一图案底部边缘任意位置处的距离大于或等于 0， 小于或等 于 0.1微米；  [0007] S2, performing a first etching on the basic substrate to obtain a patterned substrate having a first pattern of periodic arrays, wherein a distance at an arbitrary position of a bottom edge of the adjacent first pattern is greater than or equal to 0 , less than or equal to 0.1 micron;
[0008] S3、 对所述步骤 S2中的图形化衬底进行第二次蚀刻， 得到具有周期性阵列的第 二图案的图形化衬底， 所述第二图案的底部边缘通过第二次蚀刻形成复数个蚀 刻部， 使得所述相邻第二图案底部边缘任意位置处的距离均大于 0.1微米， 以利 于后续外延层的生长。  [0008] S3, performing a second etching on the patterned substrate in the step S2 to obtain a patterned substrate having a second pattern of periodic arrays, the bottom edge of the second pattern being etched by the second etching A plurality of etched portions are formed such that the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micron to facilitate the growth of the subsequent epitaxial layer.
[0009] 优选的， 所述相邻第二图案底部边缘任意位置处的距离均大于 0.1微米， 小于或 等于 0.2微米。  [0009] Preferably, the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micrometers and less than or equal to 0.2 micrometers.
[0010] 优选的， 所述蚀刻部的深度为所述第一图案底部外接圆半径的 1/40〜1/8。  [0010] Preferably, the depth of the etched portion is 1/40 to 1/8 of the radius of the circumscribed circle of the bottom of the first pattern.
[0011] 优选的， 所述步骤 S3中第二图案底部边缘蚀刻部的数量均≥3。  [0011] Preferably, the number of bottom edge etched portions of the second pattern in the step S3 is ≥3.
[0012] 优选的， 所述第二图案的底部边缘蚀刻部的个数为 3~12个。  [0012] Preferably, the number of the bottom edge etching portions of the second pattern is 3 to 12.
[0013] 优选的， 所述蚀刻部的俯视形状为三角形或者朝向所述第二图案中心方向凹陷 的圆弧状。  [0013] Preferably, the etching portion has a triangular shape or an arc shape that is recessed toward the center of the second pattern.
[0014] 优选的， 所述第一次刻蚀与第二次刻蚀方法相同或不同。  [0014] Preferably, the first etching is the same as or different from the second etching method.
[0015] 优选的， 所述第一图案为三角锥形、 尖锥形、 多面体锥形或蒙古包型。 [0015] Preferably, the first pattern is a triangular cone shape, a pointed cone shape, a polyhedral cone shape or a yurt type.
[0016] 一种图形化衬底， 所述图形化衬底表面具有周期性阵列的第一图案， 所述相邻 第一图案底部边缘任意位置处的距离大于或等于 0， 小于或等于 0.1微米， 所述第 一图案经蚀刻后得到第二图案， 其特征在于： 所述第二图案的底部边缘具有复 数个蚀刻部， 所述蚀刻部的深度为所述第一图案底座外接圆半径的 1/40〜1/8， 使得所述相邻第二图案底部边缘任意位置处的距离均大于 0.1微米， 以利于后续 外延层的生长， 而为了进一步优化图形化衬底的性能， 本发明进一步选择相邻 第二图案底部边缘任意位置处的距离均大于 0.1微米， 小于或等于 0.2微米。 [0016] A patterned substrate, the patterned substrate surface having a first pattern of periodic arrays, the distance at any position of the bottom edge of the adjacent first pattern being greater than or equal to 0, less than or equal to 0.1 micron The first pattern is etched to obtain a second pattern, wherein: the bottom edge of the second pattern has a plurality of etched portions, and the depth of the etched portion is 1 of a circumscribed circle radius of the first pattern base /40~1/8, such that the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micron to facilitate the growth of the subsequent epitaxial layer, and in order to further optimize the performance of the patterned substrate, the present invention further selects The distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micron and less than or equal to 0.2 micron.
[0017] 优选的， 所述第二图案蚀刻部的数量均≥3， 且进一步选择所述第二图案的底部 边缘蚀刻部的个数为 3~12个。 [0017] Preferably, the number of the second pattern etching portions is ≥3, and the number of the bottom edge etching portions of the second pattern is further selected to be 3 to 12.
发明的有益效果  Advantageous effects of the invention
有益效果 [0018] 本发明首先采用第一次蚀刻工艺制备获得具有第一图案的图形化衬底， 所述具 有第一图案的图形化衬底中相邻的图案底面边缘相连或最小间隙小于或等于 0.1 微米， 在与现有技术中相同衬底面积、 相同图案数的前提下相比较， 本发明的 图案底座较大， 从而增加了图案的反光面积， 提升后续形成的发光二极管的发 光效率。 随后采用第二次蚀刻工艺， 将相邻图案的连接部或底面边缘最小间隙 小于或等于 0.1微米处的部分图案蚀刻去除， 使得相邻图案底面边缘任意处间距 均大于 0.1微米， 因为试验结果证明， 当图形化衬底的相邻图案之间最小间距大 于 0.1微米吋， 在其上即可生长获得具有较好晶体质量的外延层。 Beneficial effect [0018] The present invention firstly obtains a patterned substrate having a first pattern by using a first etching process, wherein adjacent edges of adjacent patterns in the patterned substrate having the first pattern are connected or the minimum gap is less than or equal to 0.1 Micron, compared with the same substrate area and the same number of patterns in the prior art, the pattern base of the present invention is larger, thereby increasing the reflective area of the pattern and improving the luminous efficiency of the subsequently formed light emitting diode. Subsequently, a second etching process is used to etch away portions of the pattern of the adjacent pattern or the bottom surface with a minimum gap of less than or equal to 0.1 micron, so that the spacing between the bottom edges of adjacent patterns is greater than 0.1 micron at any distance, because the test results prove When the minimum spacing between adjacent patterns of the patterned substrate is greater than 0.1 micron, an epitaxial layer having a better crystal quality can be grown thereon.
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0019] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。  The drawings are intended to provide a further understanding of the invention, and are intended to be a part of the description of the invention. In addition, the drawing figures are a summary of the description and are not drawn to scale.
[0020] 图 1为现有技术图形化衬底示意图。  1 is a schematic view of a prior art patterned substrate.
[0021] 图 2为本发明实施例之图形化衬底的制备流程示意图。  2 is a schematic flow chart of a preparation process of a patterned substrate according to an embodiment of the present invention.
[0022] 图 3〜6为本发明实施例 1之图形化衬底制备中各步骤的图案结构示意图。  3 to 6 are schematic diagrams showing the pattern structure of each step in the preparation of the patterned substrate according to Embodiment 1 of the present invention.
[0023] 图 7〜9为本发明实施例 2之图形化衬底制备中各步骤的图案结构示意图。  7 to 9 are schematic diagrams showing the pattern structure of each step in the preparation of the patterned substrate according to Embodiment 2 of the present invention.
本发明的实施方式 Embodiments of the invention
[0024] 以下将结合附图及实施例来详细说明本发明的实施方式， 借此对本发明如何应 用技术手段来解决技术问题， 并达成技术效果的实现过程能充分理解并据以实 施。 需要说明的是， 只要不构成冲突， 本发明中的各个实施例以及各实施例中 的各个特征可以相互结合， 所形成的技术方案均在本发明的保护范围之内。  [0024] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings and embodiments, in which the technical solutions of the present invention can be used to solve the technical problems, and the implementation of the technical effects can be fully understood and implemented. It should be noted that the various embodiments of the present invention and the various features of the various embodiments may be combined with each other as long as they do not constitute a conflict, and the technical solutions formed are all within the protection scope of the present invention.
[0025] 实施例 1  Embodiment 1
[0026] 参看附图 2〜5， 一种图形化衬底的制备方法， 所述方法包括如下步骤：  2 to 5, a method for preparing a patterned substrate, the method comprising the following steps:
[0027] Sl、 如图 3所示， 提供一基本衬底 100; 衬底 100材料可以为蓝宝石、 硅、 碳化 硅、 氮化镓等。 [0027] Sl, as shown in FIG. 3, provides a basic substrate 100; the substrate 100 material may be sapphire, silicon, silicon carbide, gallium nitride, or the like.
[0028] S2、 如图 4所示， 在所述基本衬底 100表面涂覆光刻胶， 经光刻工艺后暴露出待 蚀刻区域， 随后进行第一次蚀刻制程， 得到具有周期性阵列的第一图案 200的图 形化衬底， 该第一图案 200可以为三角锥形、 尖锥形或多面体锥形， 本实施例中 优选为三角锥形。 [0028] S2, as shown in FIG. 4, a photoresist is coated on the surface of the base substrate 100, and exposed after the photolithography process. Etching the region, followed by a first etching process, to obtain a patterned substrate having a periodic pattern of the first pattern 200, which may be triangular pyramidal, tapered or polyhedral, in this embodiment It is preferably a triangular pyramid.
[0029] 其中， 每一第一图案 200的底面边缘与相邻图案底面边缘的距离大于或等于 0， 小于或等于 0.1微米； 如图 4中图案 210的底面边缘， 特别是底面边缘拐角 211与相 邻图案 220的底面边缘 222的距离小于或等于 0.1微米 （为便于说明问题， 本实施 例定义其中一图案为 210， 其相邻图案为 220， 实际应用中图案 210与 220的结构 等是相同的） ， 甚至于与其相连， 本实施例中显示两者的距离为 0， 即直接相连 ； 因为相邻图案距离较近， 因此与现有图形化衬底相比较， 在相同面积的基本 衬底表面， 当图案数量相同吋， 则每一图案的底座较大或者其图案的高度较大  [0029] wherein, the distance between the bottom edge of each first pattern 200 and the bottom edge of the adjacent pattern is greater than or equal to 0, less than or equal to 0.1 micron; as shown in FIG. 4, the bottom edge of the pattern 210, particularly the bottom edge corner 211 and The distance between the bottom edge 222 of the adjacent pattern 220 is less than or equal to 0.1 micrometer. (For convenience of explanation, the embodiment defines one of the patterns as 210 and the adjacent pattern as 220. In practice, the structures of the patterns 210 and 220 are the same. And even connected thereto, in this embodiment, the distance between the two is 0, that is, directly connected; because the adjacent patterns are relatively close, the basic substrate in the same area is compared with the existing patterned substrate. Surface, when the number of patterns is the same, the base of each pattern is larger or the height of the pattern is larger
[0030] S3、 如图 5所示， 于步骤 S2中的具有第一图案 200的图形化衬底上涂覆光刻胶， 经光刻工艺后暴露出待蚀刻区域 （黑色部分） ； 随后， 进行第二次蚀刻制程， 蚀刻每一与相邻图案底面边缘的距离小于 0.1微米的图案底面边缘处， 如图 6所示 ， 得到具有周期性阵列的第二图案 200 ' 的图形化衬底； 其中， 第二图案 200 ' 的底部边缘通过第二次蚀刻形成复数个蚀刻部 21 。 蚀刻部 21 的深度为第 一图案 200底部外接圆半径的 1/40〜1/8， 使得所述相邻第二图案 200 ' 底部边缘 任意位置处的距离均大于 0.1微米， 以利于后续外延层的生长； 每一第二图案 200 ' 的蚀刻部数量均≥3， 本实施例中蚀刻部优选为 3个， 且任意第二图案 200 ' 底 面边缘与相邻第二图案 200 ' 的底面边缘任意处的间距均大于 0.1微米， 即附图 6 中， 第二图案 21(Τ 的任意位置与相邻第二图案 220 ' 的底面边缘 222 ' 距离均大 于 0.1微米， 且为了保证本发明的有益效果， 本实施例进一步选取第二图案 21(Τ 的任意位置与相邻第二图案 220 ' 的底面边缘 222 ' 距离均大于 0.1微米而小于或 等于 0.2微米； 试验结果表明， 当相邻图案的任意处距离均大于 0.1微米吋， 在其 上生长外延层吋， 即可获得较优量的晶体质量； 而相邻图案的间距小于或等于 0. 2微米吋可在获得好的晶体质量的同吋亦保证图案的底座在第二次蚀刻后剩余底 座面积仍然大于现有工艺获得的图案底座， 即在相同衬底面积、 相同图案数、 相同相邻图案间距的前提下， 本发明的图案底座较现有技术的图案底座较大， 增加了反光面积从而提升最终形成的器件的发光效率。 [0030] S3, as shown in FIG. 5, a photoresist is coated on the patterned substrate having the first pattern 200 in step S2, and a region to be etched (black portion) is exposed after the photolithography process; Performing a second etching process to etch each of the bottom edges of the pattern having a distance of less than 0.1 micrometer from the edge of the bottom surface of the adjacent pattern, as shown in FIG. 6, to obtain a patterned substrate having a periodic pattern of the second pattern 200'; The bottom edge of the second pattern 200 ′ forms a plurality of etched portions 21 by a second etching. The depth of the etched portion 21 is 1/40 to 1/8 of the radius of the circumscribing circle at the bottom of the first pattern 200, so that the distance at any position of the bottom edge of the adjacent second pattern 200' is greater than 0.1 micron to facilitate the subsequent epitaxial layer. The number of etched portions of each of the second patterns 200 ′ is ≥3, and the etched portions are preferably three in the embodiment, and the bottom edges of any of the second patterns 200 ′ and the bottom edges of the adjacent second patterns 200 ′ are arbitrary. The spacing is greater than 0.1 micron, that is, in FIG. 6, the second pattern 21 (any position of the Τ and the bottom edge 222 ′ of the adjacent second pattern 220 ′ are both greater than 0.1 μm, and in order to ensure the beneficial effects of the present invention In this embodiment, the second pattern 21 is further selected (the arbitrary position of the Τ and the bottom edge 222 ′ of the adjacent second pattern 220 ′ are both greater than 0.1 μm and less than or equal to 0.2 μm; the test results show that when the adjacent pattern is arbitrary Where the distance is greater than 0.1 micron 吋, the epitaxial layer 生长 is grown thereon, and a better amount of crystal quality can be obtained; and the spacing of adjacent patterns is less than or equal to 0.2 micron 吋 can obtain good crystal quality. The remaining base area of the base of the patterned pattern after the second etching is still larger than the pattern base obtained by the prior art, that is, the pattern base of the present invention is present under the premise of the same substrate area, the same number of patterns, and the same adjacent pattern pitch. The technical pattern base is large, The reflective area is increased to increase the luminous efficiency of the resulting device.
[0031] 本发明的两次刻蚀方法相同或不同， 为干法刻蚀、 湿法刻蚀、 或干法与湿法组 合的刻蚀。 本实施例中两次刻蚀选用湿法刻蚀， 并通过控制溶液成分、 腐蚀温 度、 腐蚀吋间等参数， 形成所需的具有第二图案 200'的图形化衬底。  [0031] The two etching methods of the present invention are the same or different, and are dry etching, wet etching, or etching of a dry method and a wet method. In this embodiment, the two etchings are selected by wet etching, and the desired patterned substrate having the second pattern 200' is formed by controlling parameters such as solution composition, etching temperature, and etching time.
[0032] 继续参看附图 3~6， 利用本发明方法， 制备获得一种图形化衬底， 包括基本衬 底 100， 在所述基本衬底 100表面刻蚀形成以阵列形式排列的第一图案 210和 220 ， 并将第一图案 210和 220蚀刻后得到第二图案 21(Τ 、 220 / ， 其中， 每一第二 图案 200 ' 底面边缘蚀刻部 21 大于等于 3个， 本实施例选择第二图案 21(Τ 、 2 20 / 的底部边缘蚀刻部的个数为 3~12个。 且蚀刻部深度为第一图案 210底座外接 圆半径的 1/40〜1/8； 使得每一第二图案底面边缘 222 ' 与相邻图案底面边缘拐角 21 的任意位置处距离均大于 0.1微米， 以利于后续外延层的生长。 [0032] With continued reference to FIGS. 3-6, a patterned substrate is obtained by the method of the present invention, including a base substrate 100, and a first pattern arranged in an array is formed on the surface of the base substrate 100. 210 and 220, and etching the first patterns 210 and 220 to obtain a second pattern 21 (Τ, 220 / , wherein each of the second patterns 200 ′ has a bottom edge etch portion 21 of three or more, and this embodiment selects the second The number of the bottom edge etching portions of the pattern 21 (Τ, 2 20 / is 3 to 12), and the etching portion depth is 1/40 to 1/8 of the radius of the circumscribed circle of the first pattern 210; The distance between the bottom edge 222' and any position of the bottom corner 21 of the adjacent pattern is greater than 0.1 micron to facilitate the growth of the subsequent epitaxial layer.
[0033] 实施例 2  Example 2
[0034] 本实施例与实施例 1的区别在于， 本实施例中基本衬底 100表面的第一图案 300 采用干法刻蚀制备获得， 优选图案为蒙古包型， 每一第一图案的底面边缘与相 邻第一图案的底面边缘距离为 0〜0.1微米； 如图 7中所示， 第一图案 310的底面边 缘 311与相邻第一图案 320的底面边缘 321的距离小于或等于 0.1微米， 甚至相连； 因为相邻图案距离较近， 因此与现有图形化衬底相比较， 在相同面积的基本衬 底 100表面， 当图案数量相同吋， 则每一图案的底座较大。 随后通过干法蚀刻进 行第二次蚀刻， 蚀刻第一图案 300底面边缘与相邻第一图案 300底面边缘的距离 小于或等于 0.1微米的边缘处， 即蚀刻部。 如图 8所示的 311和 321， 得到具有蚀刻 部 31 和 32 的第二图案 31(Τ 和 320 ' 的图形化衬底， 如图 9所示。 其中具有 蚀刻部 31 和 32 的第二图案 31(Τ 和 320 ' 的图形化衬底中， 每一蚀刻部深 度分别为第一图案 310和 320底座外接圆半径的 1/40〜1/8； 以保证每一图案底面 边缘与相邻图案的底面边缘的间距大于 0.1微米。 进一步地， 相邻第二图案间的 距离小于或等于 0.2微米， 理由同实施例 1中所述。 同吋通过控制气体浓度、 气体 流量、 射频功率等参数形成所需的底面边缘具有蚀刻部图案的图形化衬底。  [0034] The difference between the embodiment and the embodiment 1 is that the first pattern 300 on the surface of the base substrate 100 in the embodiment is obtained by dry etching, and the preferred pattern is a yurt type, and the bottom edge of each first pattern The distance from the bottom edge of the adjacent first pattern is 0 to 0.1 μm; as shown in FIG. 7, the distance between the bottom edge 311 of the first pattern 310 and the bottom edge 321 of the adjacent first pattern 320 is less than or equal to 0.1 μm. Even if the adjacent patterns are close to each other, the base of each pattern is larger when the number of patterns is the same on the surface of the base substrate 100 of the same area as compared with the existing patterned substrate. A second etching is then performed by dry etching to etch the edge of the bottom surface of the first pattern 300 from the edge of the bottom surface of the adjacent first pattern 300 by less than or equal to 0.1 μm, i.e., the etched portion. 311 and 321 as shown in Fig. 8, a patterned substrate having the second patterns 31 (Τ and 320' having the etched portions 31 and 32 is obtained as shown in Fig. 9. The second pattern having the etched portions 31 and 32 therein In the patterned substrate of 31 (Τ and 320 ', the depth of each etched portion is 1/40 to 1/8 of the radius of the circumscribed circle of the first pattern 310 and 320, respectively; to ensure the bottom edge of each pattern and the adjacent pattern The spacing between the bottom edges of the bottom surface is greater than 0.1 μm. Further, the distance between adjacent second patterns is less than or equal to 0.2 μm for the same reason as described in Embodiment 1. The same is formed by controlling gas concentration, gas flow rate, radio frequency power and the like. The desired bottom edge has a patterned substrate with an etched portion pattern.

Claims

权利要求书 Claim
[权利要求 1] 一种图形化衬底的制备方法， 其特征在于， 所述方法包括如下步骤：  [Claim 1] A method of fabricating a patterned substrate, the method comprising the steps of:
51、 提供一基本衬底；  51. Providing a basic substrate;
52、 对所述基本衬底进行第一次蚀刻， 得到具有周期性阵列的第一图 案的图形化衬底， 所述相邻第一图案底部边缘任意位置处的距离大于 或等于 0， 小于或等于 0.1微米；  52, performing a first etching on the basic substrate to obtain a patterned substrate having a first pattern of periodic arrays, wherein a distance at any position of a bottom edge of the adjacent first pattern is greater than or equal to 0, less than or Equal to 0.1 micron;
53、 对所述步骤 S2中的图形化衬底进行第二次蚀刻， 得到具有周期 性阵列的第二图案的图形化衬底， 所述第二图案的底部边缘通过第二 次蚀刻形成复数个蚀刻部， 使得所述相邻第二图案底部边缘任意位置 处的距离均大于 0.1微米， 以利于后续外延层的生长。  53. performing a second etching on the patterned substrate in the step S2 to obtain a patterned substrate having a second pattern of a periodic array, wherein the bottom edge of the second pattern is formed by a second etching The etching portion is such that the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micron to facilitate the growth of the subsequent epitaxial layer.
[权利要求 2] 根据权利要求 1所述的一种图形化衬底的制备方法， 其特征在于： 所 述相邻第二图案底部边缘任意位置处的距离均大于 0.1微米， 小于或 等于 0.2微米。  [Claim 2] The method for preparing a patterned substrate according to claim 1, wherein: the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micrometer and less than or equal to 0.2 micrometer. .
[权利要求 3] 根据权利要求 1所述的一种图形化衬底的制备方法， 其特征在于： 所 述蚀刻部的深度为所述第一图案底座外接圆半径的 1/40〜1/8。  [Claim 3] The method for preparing a patterned substrate according to claim 1, wherein: the depth of the etching portion is 1/40 to 1/8 of a radius of the circumcircle of the first pattern base .
[权利要求 4] 根据权利要求 1所述的一种图形化衬底的制备方法， 其特征在于： 所 述步骤 S3中第二图案底部边缘蚀刻部的数量均≥3。 [Claim 4] The method for preparing a patterned substrate according to claim 1, wherein the number of the bottom edge etching portions of the second pattern in the step S3 is ≥3.
[权利要求 5] 根据权利要求 4所述的一种图形化衬底的制备方法， 其特征在于： 所 述第二图案的底部边缘蚀刻部的数量为 3~12个。 [Claim 5] The method for preparing a patterned substrate according to claim 4, wherein the number of the bottom edge etching portions of the second pattern is 3 to 12.
[权利要求 6] 根据权利要求 1所述的一种图形化衬底的制备方法， 其特征在于： 所 述蚀刻部的俯视形状为三角形或者朝向所述第二图案中心方向凹陷的 圆弧状。 [Claim 6] A method of manufacturing a patterned substrate according to claim 1, wherein the etching portion has a triangular shape or an arc shape that is recessed toward the center of the second pattern.
[权利要求 7] 根据权利要求 1所述的一种图形化衬底的制备方法， 其特征在于： 所 述第一次蚀刻与第二次蚀刻的方法相同或不同。  [Claim 7] A method of fabricating a patterned substrate according to claim 1, wherein: the first etching is the same as or different from the second etching.
[权利要求 8] 根据权利要求 1所述的一种图形化衬底的制备方法， 其特征在于： 所 述第一图案为三角锥形、 尖锥形、 多面体锥形或蒙古包型。 [Claim 8] A method of fabricating a patterned substrate according to claim 1, wherein: the first pattern is a triangular pyramid, a pointed cone, a polyhedral cone or a yurt.
[权利要求 9] 一种图形化衬底， 所述图形化衬底表面具有周期性阵列的第一图案， 所述相邻第一图案底部边缘任意位置处的距离大于或等于 0， 小于或 等于 0.1微米； 所述第一图案经蚀刻后得到第二图案， 其特征在于： 所述第二图案的底部边缘具有复数个蚀刻部； 所述蚀刻部的深度为所 述第一图案底座外接圆半径的 1/40〜1/8， 使得所述相邻第二图案底部 边缘任意位置处的距离均大于 0.1微米， 以利于后续外延层的生长。 [Claim 9] A patterned substrate, the patterned substrate surface having a first pattern of periodic arrays, the distance at any position of the bottom edge of the adjacent first pattern being greater than or equal to 0, less than or Is equal to 0.1 micrometer; the first pattern is etched to obtain a second pattern, wherein: the bottom edge of the second pattern has a plurality of etching portions; the depth of the etching portion is an circumcircle of the first pattern base The radius is 1/40 to 1/8, so that the distance at any position of the bottom edge of the adjacent second pattern is greater than 0.1 micron to facilitate the growth of the subsequent epitaxial layer.
[权利要求 10] 根据权利要求 9所述的一种图形化衬底， 其特征在于： 所述第二图案 [Claim 10] A patterned substrate according to claim 9, wherein: said second pattern
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