CN202492569U - Sputtering machine and baffle structure thereof - Google Patents
Sputtering machine and baffle structure thereof Download PDFInfo
- Publication number
- CN202492569U CN202492569U CN2012200642866U CN201220064286U CN202492569U CN 202492569 U CN202492569 U CN 202492569U CN 2012200642866 U CN2012200642866 U CN 2012200642866U CN 201220064286 U CN201220064286 U CN 201220064286U CN 202492569 U CN202492569 U CN 202492569U
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- Prior art keywords
- baffle arrangement
- guide rail
- sputter
- side plate
- rail structure
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Abstract
Provided is a baffle structure of a sputtering machine. The baffle structure is arranged on at least one side of a guide rail structure. The guide rail structure is used for guiding moving of an objective table which is used for placing substrates to be sputtered. A sputtering source is arranged above the guide rail structure. In addition, at least partial areas of one lateral plate of the baffle structure form an obtuse angle with the face where the guide rail structure is located. The utility model further provides the sputtering machine including the baffle structure. According to the technical scheme, in the sputtering process, agglomeration objects and particles on the baffle structure are not easy to peel, and therefore, the rate of finished products of the sputtered substrates is improved.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of sputter machine and baffle arrangement thereof.
Background technology
In field of semiconductor manufacture, many processing procedures relate to sputtering process, and for example in the manufacturing processed of solar cell, the transparency conductive electrode and the back plate electrode that are positioned at the photoelectric conversion layer both sides form through sputter coating.
The cross-section structure of existing sputter machine is as shown in Figure 1, and this sputter machine comprises:
Guide rail structure 11 (Fig. 1 illustrates a guide rail owing to the position reason of section) is used to guide the travel direction of conveyer belt structure 12;
Be positioned at the conveyer belt structure 12 on the guide rail structure 11;
Place the Stage microscope 13 on the conveyer belt structure 12;
Place the substrate of treating sputter 14 on this Stage microscope 13;
The sputter source 15 that guide rail structure 11 tops are provided with;
Prevent the baffle plate 16 in atomic deposition zone outside Stage microscope 13.
The working process of this device is following: conveyer belt structure 12 motion under motor drives; Stage microscope 13 is driven to the sputter zone; Start working in sputter source 15, rarefied gas produces plasma body under the anomalous glow discharge condition, and this plasma body is under electric field action; Surface, sputter source 15 (being generally target) is bombarded; Molecule, atom, ion and the electronics etc. of target material surface are sputtered out, had certain kinetic energy, treat that along the certain orientation directive substrate 14 surfaces of sputter form coating by the particle of sputter.In above-mentioned sputter process,, be provided with the baffle plate 16 of vertical guideway structure 11 around the sputter zone for preventing atomic deposition zone outside Stage microscope 13.
Yet, this sputter machine in use for some time, surface deposition one deck atom of this baffle plate 16, this atom packing gets more and more thicker, finally gets off with aggregate or the particulate form sur-face peeling from this baffle plate 16.Above-mentioned aggregate of peeling off or particle can drop on the substrate of treating sputter 14 surfaces as in time not clearing up, and the performance of the device that forms after the influence causes decrease in yield.
In view of this, be necessary in fact to propose a kind of baffle arrangement of new sputter machine, to overcome the defective of existing baffle plate.
The utility model content
The purpose that the utility model is realized is the baffle arrangement that proposes a kind of new sputter machine, in the sputter process, reduces and peels off (peeling) phenomenon and take place, thereby can improve by the yield rate of the substrate of sputter.
For addressing the above problem; The utility model provides a kind of baffle arrangement of sputter machine, and said baffle arrangement is arranged at least one side of guide rail structure, and said guide rail structure is used to guide Stage microscope to move; Said Stage microscope is used to place the substrate of treating sputter, and said guide rail structure top is provided with the sputter source;
Wherein, the subregion at least of said baffle arrangement side plate and guide rail structure the place face between in obtuse angle.
Alternatively, the both sides of said guide rail structure are respectively arranged with said baffle arrangement.
Alternatively, said baffle arrangement also comprises and another relative side plate of a said side plate, connects the top board of a said side plate and said another side plate.
Alternatively, said top board is parallel with the face at said guide rail structure place, and a said side plate is rounded down with the turning that is connected of said top board.
Alternatively, the angular range between the face at the subregion at least of said baffle arrangement side plate and guide rail structure place is the 120-150 degree.
Alternatively, the angle between the face at the subregion at least of said baffle arrangement side plate and guide rail structure place is 135 degree.
Alternatively, said baffle arrangement and said guide rail structure are one-body molded.
The utility model also provides a kind of sputter machine, comprises the baffle arrangement of foregoing description.
Alternatively, said sputter machine comprises the uniform magnetic control means of control spatter film forming.
Compared with prior art, the utlity model has following advantage: the baffle plate of vertical guideway structure be set to its between the face at the side plate of sputter area and guide rail structure place in obtuse angle, so; A side plate of this baffle arrangement forms " slope " formula structure; And because the setting at obtuse angle, direction is overlooked the side plate of this guide rail structure and baffle arrangement from the sputter source, and the open top of being somebody's turn to do " slope " formula structure is big; Bottom area is little; Make the area of side plate of atomic deposition of sputter increase, disperseed the thickness of the sedimentary atomic shell of unit surface, in addition; With respect to the loading end (baffle plate) of vertically disposed atomic shell of the prior art, should " slope " formula structure decrease aggregate or particle peel off the probability of (peeling).
Further, the both sides of said guide rail structure are provided with between the face at the side plate of sputter area and guide rail structure place baffle arrangement in obtuse angle, and the baffle arrangement of these both sides forms an inverted trapezoidal structure; Direction is overlooked the side plate of this guide rail structure and baffle arrangement from the sputter source; The open top of this inverted trapezoidal structure is big, and bottom area is little, makes the area of side plate of atomic deposition of sputter increase; The thickness that has disperseed the sedimentary atomic shell of unit surface; In addition, with respect to the loading end (baffle plate) of vertically disposed atomic shell of the prior art, this inverted trapezoidal structure has reduced aggregate or particle peels off the generation of (peeling) phenomenon.
Description of drawings
Fig. 1 is the cross-sectional view of the sputter machine of prior art;
Fig. 2 is the cross-sectional view of the sputter machine that provides of the utility model embodiment one;
Fig. 3 is the stereographic map of the baffle arrangement among Fig. 2;
Fig. 4 is the front view of the baffle arrangement among Fig. 3;
Fig. 5 is the power and batch graph of a relation that adopts the solar cell of the sputter machine formation different batches among Fig. 1;
Fig. 6 is the power and batch graph of a relation that adopts the solar cell of the sputter machine formation different batches among Fig. 2;
Fig. 7 is the cross-sectional view of the sputter machine that provides of the utility model embodiment two.
Embodiment
The utility model will be set to the obtuse angle between the face at the side plate of the baffle arrangement of sputter area and guide rail structure place, utilized the side plate of this baffle arrangement to form " slope " formula structure, and because the setting at obtuse angle; Direction is overlooked the side plate of this guide rail structure and baffle arrangement from the sputter source; The open top of being somebody's turn to do " slope " formula structure is big, and bottom area is little, and the area that has reached the side plate of the atomic deposition that makes sputter increases; The thickness that has disperseed the sedimentary atomic shell of unit surface; In addition, with respect to the loading end (baffle plate) of vertically disposed atomic shell of the prior art, the aggregate or the particle that are somebody's turn to do " slope " formula structure are also incrust.
For above-mentioned purpose, the feature and advantage that make the utility model can be more obviously understandable, the embodiment of the utility model is done detailed explanation below in conjunction with accompanying drawing.
Embodiment one
Fig. 2 is the cross-sectional view of the sputter machine that provides of the utility model embodiment one.Fig. 3 is the perspective view of the baffle arrangement among Fig. 2, and Fig. 4 is the front view of Fig. 3 structure.
Sputter machine among Fig. 2 comprises:
Be positioned at the conveyer belt structure 22 on the guide rail structure 21;
Place the Stage microscope 23 on the conveyer belt structure 22;
Place the substrate of treating sputter 24 on this Stage microscope 23;
The sputter source 25 that guide rail structure 21 tops are provided with.
Need to prove that Fig. 2 only illustrates a guide rail owing to the selected position of section reason, in fact, this sputter machine also comprises the one or more guide rails parallel with this guide rail.The guide rail structure 21 that these at least two guide rails form is positioned at a plane.
Said structure and similar shown in Figure 1, different places are: the baffle arrangement that prevents atomic deposition zone outside Stage microscope 23.In conjunction with Fig. 2, Fig. 3 and Fig. 4; This baffle arrangement is divided into three parts: first part; A side plate 261 of baffle arrangement, the angle α that the plane at the subregion of this side plate 261 and guide rail structure 21 places forms is the obtuse angle, the side plate 261 here is in the sputter process; The loading end of the atomic shell that splashes down; Also claim workplace, the plane at guide rail structure 21 places here refers to the plane of guide rail structure 21 in the sputter zone, and non-this plane is to the extended surface (being positioned at the extra-regional plane of sputter) of baffle arrangement direction; Second section, another side plate 262 of baffle arrangement, this another side plate 262 is relative with side plate 261; Third part connects the top board 263 of a side plate 261 and another side plate 262, and this another side plate 262 is used for fixing this baffle arrangement with top board 263.
In the present embodiment one; Like Fig. 2 and shown in Figure 3, the plane at the central region of side plate 261 and guide rail structure 21 places in obtuse angle, this central region also is positioned at sputter area; Among other embodiment, also can whole side plate 261 all with the plane at guide rail structure 21 places in obtuse angle.
And side plate 261 is rounded down with the turning that is connected of top board 263, distributes with further dispersion atom, reduces to peel off the generation of (peeling) phenomenon.
In addition, in the present embodiment one, guide rail structure 21 both sides all are provided with this baffle arrangement, and these two baffle arrangements are mirror symmetry setting.In these two baffle arrangements, the side plate 261 of each forms " slope " formula structure, and because the setting at obtuse angle; Direction is overlooked the side plate 261 of this guide rail structure and baffle arrangement from the sputter source; Open top that should " slope " formula structure is big, and bottom area is little, makes the area of side plate 261 of atomic deposition of sputter increase; The thickness that has disperseed the sedimentary atomic shell of unit surface; In addition, with respect to the loading end (baffle plate) of vertically disposed atomic shell of the prior art, the aggregate or the particle that are somebody's turn to do " slope " formula structure are also incrust.
Generally speaking; The baffle arrangement of these both sides forms an inverted trapezoidal structure (ladder structure in the geometry relatively); That is: direction is overlooked the side plate of this guide rail structure and baffle arrangement from the sputter source, and this inverted trapezoidal structure is that open top is big, the structure that bottom area is little.The baffle arrangement of these both sides is realized function separately; That is: 1) make the depositional area of atom on side plate 261 of sputter increase; The thickness that has disperseed the sedimentary atomic shell of unit surface; 2) with respect to the loading end (baffle plate) of vertically disposed atomic shell of the prior art, the aggregate of this inverted trapezoidal structure or particle are also incrust.Among other embodiment, also can a side be provided with the baffle arrangement in the present embodiment one at guide rail structure 21.The side plate 261 of this baffle arrangement realize its 1), 2) two above-mentioned functions.
Be the effect of checking the utility model, it is that the side plate 261 of 135 degree and two sputter machines of the vertical baffle 16 among Fig. 1 compare test that the inventor has adopted the angle of obtuse angle alpha.Adopt the transparency conductive electrode and the back electrode of identical 9 batches of solar cells of sputter condition sputter, the power of the solar cell of formation is seen Fig. 5 and shown in Figure 6 respectively.Wherein, Fig. 5 is the corresponding power results of solar cell of the different batches of the sputter machine formation of the vertical baffle 16 among employing Fig. 1.Fig. 6 is the corresponding power results of solar cell of the different batches that forms of the sputter machine of the side plate 261 of 135 degree for the angle that adopts obtuse angle alpha.The X-coordinate of two figure is a batch little representative and formerly carries out, batch big representative after carry out.Can find out by Fig. 5 and Fig. 6; Carrying out along with sputter; Adopt vertical baffle plate, because aggregate or particulate peel off, the power of batches 6 to batches 9 solar cells that form is not as the solar cell of preceding 5 batches of formation; When this power is lower than certain threshold value, the solar cell of this making need be done scrap handling.Adopt the baffle arrangement of present embodiment one, in identical duration of service, formerly the solar cell of the formation of sputter is basic identical with the power of the solar cell of sputter formation in the back.This power parameter be the reflection solar cell unit time in transform light energy be electric energy and the storage ability.It is thus clear that, adopting vertical baffle plate, batches 6 to batches 9 Solar cell performance that form are not as the solar cell of preceding 5 batches of formation; Adopt the obtuse-angulate baffle arrangement in plane of side plate 261 and guide rail structure 21, batches 6 to batches 9 Solar cell performance that form are basic identical with the solar cell of preceding 5 batches of formation.In other words, adopt the baffle arrangement of present embodiment one, in identical duration of service, reduced the probability that this aggregate or particle peel off, also reduced the frequency that baffle arrangement cleans, improved the yield rate of device.
The angle of the obtuse angle alpha that this simultaneous test adopts is 135 degree.The inventor finds that the angular range of obtuse angle alpha is 120-150 when spending, and can reduce the probability that aggregate or particle peel off preferably.
The sputter machine in use also is provided with magnetic control means (not shown) on this sputter source 25, ion and electronics that this magnetic control means guiding pounds from sputter source 25 sputter on the substrate 24 equably, thereby form uniform plated film.
Can find out, in the present embodiment one, baffle arrangement and guide rail structure 21 discrete settings, these two parts are independent parts that are provided with.
Embodiment two
Compare with the sputter machine that embodiment one provides, in the sputter machine that present embodiment two provides, baffle arrangement and guide rail structure 21 are one-body molded, and be concrete with reference to shown in Figure 7.Because other parts are identical with sputter machine among the embodiment one, thereby, continue to continue to use identical label.
The baffle arrangement of the sputter machine that embodiment one provides with respect to the baffle plate of prior art, can reduce the atomic shell polymkeric substance of sputter process generation or the probability that particulate peels off; Yet this baffle arrangement still need be cleared up this polymkeric substance and particle in use for some time; Simultaneously; Guide rail structure 21 also is exposed in the sputter environment, thereby, also need periodic cleaning.Above-mentioned feasible this baffle arrangement of dismounting and the guide rail structure 21 of needing after cleaning out, need be loaded onto again again, takes time and effort.Present embodiment two adopts baffle arrangement and guide rail structure 21 is one-body molded, and making needs dismounting three times (being directed against the sputter machine that embodiment one provides) is reduced to dismounting once.
For reaching the purpose of saving dismounting manpower time cost, visible, in other embodiments, baffle arrangement and guide rail structure 21 are not limited to one-body molded, and both get final product in connection.
Though the utility model with preferred embodiment openly as above; But it is not to be used for limiting the utility model; Any those skilled in the art are in spirit that does not break away from the utility model and scope; Can utilize the method and the technology contents of above-mentioned announcement that the utility model technical scheme is made possible change and modification, therefore, every content that does not break away from the utility model technical scheme; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of the utility model technical scheme according to the technical spirit of the utility model.
Claims (10)
1. the baffle arrangement of a sputter machine, said baffle arrangement is arranged at least one side of guide rail structure, and said guide rail structure is used to guide Stage microscope to move, and said Stage microscope is used to place the substrate of treating sputter, and said guide rail structure top is provided with the sputter source;
It is characterized in that, between the face at the subregion at least of a side plate of said baffle arrangement and guide rail structure place in obtuse angle.
2. the baffle arrangement of sputter machine according to claim 1 is characterized in that, the both sides of said guide rail structure are respectively arranged with said baffle arrangement.
3. the baffle arrangement of sputter machine according to claim 1 and 2 is characterized in that, said baffle arrangement also comprises and another relative side plate of a said side plate, connects the top board of a said side plate and said another side plate.
4. the baffle arrangement of sputter machine according to claim 3 is characterized in that, said top board is parallel with the face at said guide rail structure place, and said another side plate is vertical with said top board.
5. the baffle arrangement of sputter machine according to claim 4 is characterized in that, a said side plate is rounded down with the turning that is connected of said top board.
6. the baffle arrangement of sputter machine according to claim 1 is characterized in that, the angular range between the face at the subregion at least of a side plate of said baffle arrangement and guide rail structure place is the 120-150 degree.
7. the baffle arrangement of sputter machine according to claim 1 is characterized in that, the angle between the face at the subregion at least of a side plate of said baffle arrangement and guide rail structure place is 135 degree.
8. the baffle arrangement of sputter machine according to claim 1 is characterized in that, said baffle arrangement and said guide rail structure are one-body molded.
9. a sputter machine is characterized in that, comprises each described baffle arrangement in the claim 1 to 8.
10. sputter machine according to claim 9 is characterized in that, said sputter machine comprises the uniform magnetic control means of control spatter film forming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200642866U CN202492569U (en) | 2012-02-22 | 2012-02-22 | Sputtering machine and baffle structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200642866U CN202492569U (en) | 2012-02-22 | 2012-02-22 | Sputtering machine and baffle structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202492569U true CN202492569U (en) | 2012-10-17 |
Family
ID=46998805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200642866U Expired - Lifetime CN202492569U (en) | 2012-02-22 | 2012-02-22 | Sputtering machine and baffle structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202492569U (en) |
-
2012
- 2012-02-22 CN CN2012200642866U patent/CN202492569U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121017 Effective date of abandoning: 20121023 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |