201100572 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於用以在處理基板表面上形成特定之 薄膜的濺鍍方法，特別是，係有關於作爲標靶而使用導電 性之標靶，並一面導入反應氣體一面藉由反應性濺鍍來進 行琴膜形成之濺鍍方法。 Ο 【先前技術】 作爲在玻璃或是矽晶圓等之處理基板表面上而形成特 定之薄膜的方法的其中一種，係存在有濺鍍法。此濺鍍法 ，係使電漿氛圍中之離子，朝向因應於欲在處理基板表面 上所成膜之薄膜的組成而被製作成特定之形狀的標靶來加 速並作衝撃，並使濺鍍粒子（標靶原子）飛散，而附著、 堆積於處理基板表面上，並形成特定之薄膜。在進行此濺 鍍時，係會有與由稀有氣體所成之濺鑛氣體一同地，而將 ® 氧或是氮等之特定的反應氣體導入，並藉由反應性濺鍍來 形成由濺鍍粒子與反應氣體間之化合物所成的薄膜之情況 〇 於此，在實施上述濺鍍法之濺鍍裝置中，一般而言， 係在標靶之周圍，配置有被作了接地的達成作爲陽極之功 用的遮罩。若是如此這般地而在標靶之周圍配置遮罩，則 當對於標靶施加直流電壓並在標靶之濺鍍面前方而使電漿 產生時，電漿中之電子或是二次電子會朝向遮罩而流動。 其結果，在標靶之濺鑛面的週緣區域處，電漿密度係變低 -5- 201100572 ，此週緣區域係並不會被濺鍍，並作爲非侵鈾區域而殘留 0 當濺鍍面之週緣區域作爲非侵蝕區域而殘留了的情況 時，特別是當作爲標靶而使用鋁等之導電性標靶，並將氧 等之反應氣體導入而藉由反應性濺鑛來形成氧化物之薄膜 的情況時，由於反應性濺鍍時之逆堆積，於該週緣區域處 ，氧化物係會附著並堆積。亦即是，濺鏟面之週緣區域， 係會被絕緣膜所覆蓋。在此種狀態下，於該週緣區域處’ 電漿中之電子或是二次電子係會作充電（Charge up)，起 因於此充電，會誘發異常放電，而會有對於良好之薄膜形 成造成阻礙的問題。 於此，藉由專利文獻1，係週知有：當對於標靶施加 負的直流電壓並對於標靶作濺鍍時，將該施加電壓以一定 之脈衝週期來使其變化爲正的電位之濺鍍方法。 在上述專利文獻1所記載之濺鍍方法中，於濺鍍之中 ，滯留在標靶之週緣區域處的充電電荷，係在被施加正的 電壓時而被抵消。因此，就算是標靶之週緣區域被絕緣膜 所覆蓋，起因於充電所產生之異常放電（電弧放電）亦係 被抑制。然而，在每一次之於標靶處被施加有正的電壓時 ，由於電漿係暫時性的消失，因此，會有使濺鍍速率降低 的問題。因此，對於1枚之處理基板的薄膜形成時間係變 長，而生產性係爲差。又，係成爲需要用以施加以—定之 脈衝週期而改變極性的電壓之濺鍍電源，而導致成本變高 -6 - 201100572 [先前技術文獻] [專利文獻] [專利文獻1]日本特開平1 0-237640號公報 【發明內容】 [發明所欲解決之課題] 本發明，係有鑑於上述之點，而以提供一種：不會受 ❹ 到被形成於標靶之週緣區域處的絕緣膜之影響，而能夠在 維持著高濺鍍速度的狀態下而形成薄膜，並且不會導致成 本變高的之反應性濺鍍方法一事，作爲課題。 [用以解決課題之手段] 爲了解決上述課題，申請項1中所記載之濺鍍方法， 係爲一面將反應氣體導入至濺鍍室內，一面對於在此濺鍍 室內而被與處理基板相對向地作了配置的導電性之標靶投 ^ 入電力，而在濺鍍室內形成電漿氛圍，以對於各標靶作濺 鍍，並藉由反應性濺鍍而在前述處理基板表面上形成特定 之薄膜的濺鍍方法，其特徵爲：若是投入至前述標靶處之 電力的積算値到達了特定値，則停止前述反應氣體之導入 ，並對於標靶作濺鍍。 若依據本發明，則若是投入至標靶處之電力的積算値 到達了特定値，則判斷爲係由於反應性濺鍍時之逆堆積而 在標靶之濺鍍面的週緣區域處堆積了絕緣物，並停止反應 氣體之導入，亦即是，係將對於處理基板之薄膜形成暫時 -7- 201100572 性地中斷。而後，僅將由稀有氣體所成之濺鍍氣體作導入 ，並對標靶作濺鍍。於此狀態下，從標靶而來之導電性的 濺鍍粒子，係例如與電漿中之電子相碰撞，並附著在標靶 之週緣區域處而作逆堆積。 此時，絕緣膜上之充電電荷，係藉由濺鍍粒子或是電 離了的濺鍍氣體離子而被作中和並消失，或者是藉由由於 恆常被作濺鍍而使身爲導電性的標靶之濺鍍面與週緣區域 間再度的導通，而流動至標靶側並消失。而後，若是週緣 區域之絕緣物再度地被導電性之薄膜所覆蓋，則再度開始 反應氣體之導入，並再度開始對於處理基板之薄膜形成。 如此這般，在本發明中，由於係並未爲在對於1枚之 基板的薄膜形成時而使投入電力作變化者，因此，能夠在 維持於最適當之濺鍍速率的狀態下，而對於標靶作濺鍍， 並能夠達成高生產性。又，由於係將標靶之週緣區域，藉 由與此標靶相同組成之導電膜而定期地作覆蓋，因此，起 因於充電所產生的異常放電之誘發係被防止，而能夠一直 良好地對於標靶作使用並進行薄膜形成，直到標靶之壽命 結束爲止。進而，在爲了將對於被形成在標靶處之絕緣膜 的由於充電所造成之影響消除時，係並不需要另外之構成 零件，而不會有導致成本提高的事態。 又，在申請項2中所記載之濺鍍方法，係爲將處理基 板依序搬送至濺鍍室內，並一面將反應氣體導入至此濺鍍 室內，一面對於在此濺鍍室內而被與處理基板相對向地作 了配置的導電性之標靶投入電力，而在濺鍍室內形成電漿 -8- 201100572 氛圍，以對於各標靶作濺鍍’並藉由反應性濺鍍 處理基板表面上形成特定之薄膜的濺鍍方法’其 若是投入至前述標靶處之電力的積算値到達了特 將假基板搬入至與前述標靶相對向之位置處’而 反應氣體之導入，並對於標靶作濺銨。 在本發明中，若是當前述反應氣體導入之停 對於前述標靶之投入電力，設定爲較反應氣體導 Ο 更高，則能夠將薄膜形成被中斷之時間縮短，並 提高，而爲理想。 又，若是使爲了在前述標靶之濺鍍面前方處 狀之磁通量而設置了的磁石組裝體，沿著標靶之 行地作往返移動，並當前述反應氣體導入之停止 磁石組裝體之移動幅度，設爲較反應氣體導入時 ，則藉由將磁通量密度變高之位置靠向標靶之濺 央側，在週緣區域處所被逆堆積之導電性薄膜， ® 延伸至其之中央側，其結果，能夠將標靶之週緣 實地藉由與此標靶相同組成之薄膜來作覆蓋。 [發明之效果] 如同以上所說明一般，本發明之濺鍍方法， 下述之效果：亦即是，係並不會受到被形成於標 區域處的絕緣膜之影響，而能夠在維持著高濺鍍 態下而形成薄膜，並且不會導致成本變高。 而在前述 特徵爲： 定値，則 停止前述 止時，將 入時者爲 使生產性 形成隧道 背面而平 時，將此 者爲更小 鍍面的中 係會一直 區域’確 係可得到 靶之週緣 速度的狀 201100572 【實施方式] 若是參考圖！並作說明 之反應性濺鍍方法的濺鍍裝 in-line)式者，並具備有經 等之真空保持手段（未圖示 的濺鍍室1 1。在濺鍍室1 1 板搬送手段2。基板搬送手 並具備著被裝載有例如處理 段作間歇驅動，而能夠將處 標靶相對向的位置處。 在濺鍍室1 1處，係被3 入手段3，係通過中介設置 3 2，而與氣體源3 3相通連 及在反應性濺鍍時所使用之 入至濺鎪室11內。作爲反 板S表面上成膜之薄膜的組 有氧、氮、碳、氫之氣體、 或是此些之混合氣體等。在 有磁控管濺鍍電極C。 磁控管濺鍍電極C，係 式而被設置了的略直方體（ 標靶4 1，係被連接於濺鍍I 濺鑛電源E而被施加負的i 因應於Al、Mo、Ti、Cu或 i ’則符號1，係爲實施本發明 置。濺鍍裝置1，係爲線內（ 由旋轉幫浦或是渦輪分子幫浦 )而能夠保持於特定之真空度 之上部空間處，係被設置有基 段2 ’係具備有週知之構造， 基板S之載體21，將驅動手 理基板S依序搬送至與後述之 I接有氣體導入手段3。氣體導 有質量流控制器3 1之氣體管 ，並能夠將氬等之濺鍍氣體以 反應氣體，以一定之流量而導 應氣體，係因應於欲在處理基 L成而適宜被選擇，而使用包含 臭氧、水或者是過氧化氫，又 濺鍍室1 1之下側，係被配置 具備有以面臨濺鍍室11的方 俯視時爲長方形）之標靶4 1， I：源E處，並成爲能夠經介於 直流電壓。於此，標靶41，係 是ITO等之欲在處理基板Si -10- 201100572 所成膜之薄膜的組成，而藉由週知的方法來分別製作，濺 鍍面411之面積，係被設定爲較處理基板S之外形尺寸更 大。又，標靶41，係在當濺鍍中而對於標靶41作冷卻之 背板42處，經由銦或是錫等之接合材而被作接合。在將 標靶41接合於背板42處的狀態下，以使濺鍍面411與處 理基板S相對向的方式，來經介於絕緣板43地而裝著在 磁控管濺鍍電極C之框架44處。在裝著了標靶41的情況 Ο 時，於標靶41之周圍處，係被安裝有被作了接地之達成 作爲陽極之作用的遮罩45。 磁控管濺鍍電極C，係於標靶41之後方處具備有磁 石組裝體5。磁石組裝體5，係具備有被與標靶41平行地 設置了的支持板（轭）51，此支持板51，係由將磁石之吸 著力作放大的磁性材料製之平板所構成。在支持板51上 ，以位置於在支持板51之長度方向上作延伸之中心線上 的方式而被作了配置的中央磁石52、和以包圍此中央磁石 Ο 52之周圍的方式，沿著支持板51之上面外週而被配置爲 環狀的週邊磁石5 3，係將標靶側之極性作改變地而被設置 〇 以使中央磁石52之換算爲同磁性化後的體積成爲將 其之周圍作包圍的週邊磁石5 3之換算爲同磁性化後的體 積之和（週邊磁石：中心磁石：週邊磁石=1: 2: 1)的 方式，來作設計。藉由此，在標靶41之濺鍍面411的前 方’係分別被形成有相互平衡了的閉迴圏之隧道狀的磁通 量M。而，在標靶41之前方（濺鍍面411)側處而電離了 -11 - 201100572 的電子、以及經由濺鍍而產生了的二次電子，係被作捕捉 ’藉由此’而將在標靶41前方處之電子密度提高，而能 夠提升電漿密度，並能夠提高濺鍍速率。 又，上述支持板51之橫寬幅，係以成爲較標靶41之 寬幅更小的方式而被制訂尺寸（參考圖1 )，在磁石組裝 體5之支持板51的背面處，係被設置有螺帽構件51a。在 此螺帽構件5 1 a處，係被螺合有進送螺桿6 1，在進送螺桿 61的其中一端處，係被設置有馬達62。而後，若是驅動 馬達62並使進送螺桿61作旋轉，則磁石組裝體5，係沿 著標靶41之背面而在標靶41之橫方向的一定之移動幅度 D 1中作往返移動。藉由此，能夠使磁通量密度爲高之位 置在標靶41之橫方向上作變化，而能夠將標靶41之濺鑛 面41 1略均等地作侵蝕，並能夠將標靶41之利用效率提 升。於此情況，磁石組裝體5之移動幅度D 1，係以使侵 蝕區域在標靶41之濺鍍面411中而一直延伸至其橫方向 之端部爲止的方式，而適宜作設定。 而後，若是經由基板搬送手段2來將處理基板S搬送 至與標靶4 1相對向之位置處，並經介於氣體導入手段3 而將特定之濺鍍氣體以及反應氣體導入，再經由濺鍍電源 5來施加負的直流電壓，則係形成與處理基板S以及標靶 41相垂直之電場，並在標靶41之濺鍍面411前方產生電 漿，而使標靶41被作濺鍍，並在處理基板S之表面上， 形成由此被作了濺鍍的濺鍍粒子與反應氣體間之化合物所 成的薄膜。 -12- 201100572 於此，在上述濺鍍裝置1中，由於係在標靶41之周 圍處設置有遮罩45，因此，當在灘鍍面411前方而使電獎 產生時’電漿中之電子或是二次電子會朝向遮罩45而流 動。其結果，在標靶41之濺鍍面411的週緣區域421處 ，電漿密度係變低，此週緣區域412係並不會被濺鍍，並 作爲非侵蝕區域而殘留（參考圖2(a))。 例如，若是作爲標靶41而使用鋁之導電性標靶，並 0 將由氧所成之反應氣體導入，而藉由反應性濺鍍來形成氧 化物之薄膜，則由於反應性濺鍍時之逆堆積，於該週緣區 域412處，氧化物係會附著並堆積，而該週緣區域412係 被絕緣膜I所覆蓋。若是在此種狀態下而繼續進行由濺鍍 所致之薄膜形成，則在被絕緣膜I所覆蓋之週緣區域4 1 2 處，電漿中之電子或是二次電子係會作充電（charge up) (參考圖2(b))。故而，係有必要設爲不會使起因於此 種充電所導致的異常放電被誘發。201100572 VI. Description of the Invention: [Technical Field] The present invention relates to a sputtering method for forming a specific thin film on a surface of a substrate to be processed, and in particular, a method for using conductivity as a target A sputtering method in which a target is formed while a reaction gas is introduced while reactive film is formed by reactive sputtering.先前 [Prior Art] As one of the methods of forming a specific thin film on the surface of a substrate such as glass or tantalum wafer, there is a sputtering method. The sputtering method accelerates and pulsates ions in a plasma atmosphere toward a target that is formed into a specific shape in response to a composition of a film to be formed on a surface of a substrate to be processed, and causes sputtering. The particles (target atoms) scatter and adhere to and deposit on the surface of the processing substrate to form a specific film. In the case of this sputtering, a specific reaction gas such as oxygen or nitrogen is introduced together with the sputtering gas formed by the rare gas, and sputtering is formed by reactive sputtering. In the case of a thin film formed by a compound between a particle and a reaction gas, in the sputtering apparatus which performs the said sputtering method, generally, it is set as the anode, and it is set as the anode. The function of the mask. If the mask is placed around the target as such, when the DC voltage is applied to the target and the plasma is generated in front of the sputtering surface of the target, the electrons or secondary electrons in the plasma will Flows toward the mask. As a result, at the peripheral region of the splash surface of the target, the plasma density becomes lower -5 - 201100572, and the peripheral region is not sputtered, and remains as a non-invasive uranium region. When the peripheral region remains as a non-erosion region, in particular, a conductive target such as aluminum is used as a target, and a reaction gas such as oxygen is introduced to form an oxide by reactive sputtering. In the case of a film, due to the reverse deposition during reactive sputtering, the oxide system adheres and accumulates at the peripheral region. That is, the peripheral area of the shovel surface is covered by the insulating film. In this state, the electrons in the plasma or the secondary electrons in the peripheral region will be charged up, which will cause abnormal discharge due to charging, and will cause a good film formation. The problem of hindrance. Here, Patent Document 1 knows that when a negative DC voltage is applied to a target and a target is sputtered, the applied voltage is changed to a positive potential with a predetermined pulse period. Sputtering method. In the sputtering method described in Patent Document 1, the charge charge remaining in the peripheral region of the target during sputtering is canceled when a positive voltage is applied. Therefore, even if the peripheral region of the target is covered by the insulating film, abnormal discharge (arc discharge) due to charging is suppressed. However, when a positive voltage is applied to the target every time, since the plasma system temporarily disappears, there is a problem that the sputtering rate is lowered. Therefore, the film formation time of one of the processed substrates is lengthened, and the productivity is poor. In addition, it is a sputtering power source that is required to apply a voltage that changes polarity in a predetermined pulse period, resulting in a high cost. -6 - 201100572 [Prior Art Document] [Patent Literature] [Patent Document 1] Japanese Patent Laid-Open No. 1 [Problem to be Solved by the Invention] The present invention has been made in view of the above, and provides an insulating film which is not exposed to a peripheral region formed on a target. It is a problem that a thin film can be formed while maintaining a high sputtering rate, and a reactive sputtering method which does not cause an increase in cost is a problem. [Means for Solving the Problems] In order to solve the above-described problems, the sputtering method described in the first aspect of the invention is directed to the processing substrate while the reaction gas is introduced into the sputtering chamber while being in the sputtering chamber. The conductive target is configured to be electrically charged, and a plasma atmosphere is formed in the sputtering chamber to be sputtered for each target, and a specific surface is formed on the surface of the processing substrate by reactive sputtering. In the sputtering method of the thin film, if the integrated electric power of the electric power input to the target reaches a specific enthalpy, the introduction of the reaction gas is stopped, and the target is sputtered. According to the present invention, if the integrated power of the electric power input to the target reaches a specific enthalpy, it is judged that the insulation is deposited at the peripheral region of the sputtering surface of the target due to the reverse deposition at the time of reactive sputtering. And stop the introduction of the reaction gas, that is, the film formation for the processing of the substrate is temporarily interrupted. Then, only the sputtering gas formed by the rare gas is introduced, and the target is sputtered. In this state, the conductive sputter particles from the target collide with, for example, electrons in the plasma, and adhere to the peripheral region of the target to be reversely stacked. At this time, the charge on the insulating film is neutralized and disappeared by sputtering particles or ionized sputtering gas ions, or is made conductive by being constantly sputtered. The target's sputtered surface is again turned on and the peripheral area is turned on, and flows to the target side and disappears. Then, if the insulator in the peripheral region is again covered with the conductive film, the introduction of the reaction gas is started again, and the film formation for the substrate is resumed. As described above, in the present invention, since the input electric power is not changed when the film is formed on one of the substrates, it is possible to maintain the optimum sputtering rate while maintaining the optimum sputtering rate. The target is sputtered and can achieve high productivity. Further, since the peripheral region of the target is periodically covered by the conductive film having the same composition as the target, the induction of abnormal discharge due to charging is prevented, and it is possible to consistently The target is used and film formation is performed until the end of the life of the target. Further, in order to eliminate the influence of charging on the insulating film formed at the target, no additional constituent parts are required, and there is no possibility of causing an increase in cost. Further, in the sputtering method described in the application item 2, the processing substrate is sequentially transferred to the sputtering chamber, and the reaction gas is introduced into the sputtering chamber, and the substrate is processed and processed in the sputtering chamber. A conductive target that is configured to be grounded is put into the power, and a plasma -8-201100572 atmosphere is formed in the sputtering chamber to be sputtered for each target' and formed by reactive sputtering on the surface of the substrate. A sputtering method of a specific film, in which the integrated power of the power input to the target reaches the position where the dummy substrate is moved to a position opposite to the target, and the introduction of the reaction gas is performed for the target. Splashing ammonium. In the present invention, when the input power of the target gas introduced into the target gas is set to be higher than the reaction gas, the time during which the film formation is interrupted can be shortened and improved. In addition, the magnet assembly provided for the magnetic flux in front of the sputtering surface of the target is reciprocated along the target line, and the movement of the magnet assembly is stopped when the reaction gas is introduced. The amplitude is set to be higher than the position at which the magnetic flux density is increased toward the splash side of the target, and the conductive film which is reversely deposited at the peripheral portion is extended to the center side thereof. As a result, the periphery of the target can be covered by the film of the same composition as the target. [Effects of the Invention] As described above, the sputtering method of the present invention has an effect that it is not affected by the insulating film formed at the target region, and can be maintained high. The film is formed in a sputtered state without causing a cost increase. However, in the above-mentioned feature: when the stop is stopped, the time of the stop is set to make the tunnel forming the back surface of the tunnel, and the middle portion of the smaller plated surface is always the region where the target can be obtained. Speed shape 201100572 [Embodiment] If it is a reference picture! In addition, the injecting method of the reactive sputtering method is provided with a vacuum holding means (a sputtering chamber 1 (not shown). In the sputtering chamber 1 1 board conveying means 2 The substrate transporting hand is provided at a position where the target portion is opposed to each other by being loaded with, for example, a processing section. In the sputtering chamber 1 1 , the means 3 is inserted, and the intermediate setting 3 3 is provided by the intermediary. And connected to the gas source 3 3 and used in the reactive sputtering to enter the sputtering chamber 11. The group of films formed on the surface of the counter plate S is a gas of oxygen, nitrogen, carbon, hydrogen, Or a mixture of such gases, etc. There is a magnetron sputtering electrode C. The magnetron is sputtered with electrode C, and the slightly rectangular body is set (target 4 1, is connected to the sputtering I Splashing power supply E is negatively applied i. In response to Al, Mo, Ti, Cu or i', the symbol 1 is used to implement the invention. The sputtering device 1 is in-line (by rotary pump or turbine) The molecular pump is capable of being maintained at a specific vacuum above the space, and is provided with a base section 2' having a well-known structure. The carrier 21 of the board S transports the handle substrate S in sequence to the gas introduction means 3 connected to I, which will be described later. The gas is guided by the gas tube of the mass flow controller 31, and the sputtering gas such as argon can be used. The reaction gas, which is a gas at a certain flow rate, is suitably selected in accordance with the desired treatment of the treatment group L, and the use of ozone, water or hydrogen peroxide, and the lower side of the sputtering chamber 1 is used. The target 4, I: source E is disposed in a rectangular shape when viewed from the side facing the sputtering chamber 11, and is capable of passing through a DC voltage. Here, the target 41 is an ITO or the like. The composition of the film formed by the substrate Si -10- 201100572 is processed by a known method, and the area of the sputtering surface 411 is set to be larger than the size of the processing substrate S. The target 41 is joined by a bonding material such as indium or tin during the sputtering of the backing plate 42 for the target 41. The state in which the target 41 is bonded to the backing plate 42 is bonded. Next, the insulating plate 43 is interposed so that the sputtering surface 411 faces the processing substrate S. It is mounted on the frame 44 of the magnetron sputtering electrode C. When the target 41 is mounted, the periphery of the target 41 is mounted with the grounding achievement as the anode. The magnetron sputter electrode C is provided with a magnet assembly 5 behind the target 41. The magnet assembly 5 is provided with a support plate (yoke) provided in parallel with the target 41. 51. The support plate 51 is formed of a flat plate made of a magnetic material that amplifies the attraction force of the magnet. The support plate 51 is placed on the center line extending in the longitudinal direction of the support plate 51. The central magnet 52 disposed and the peripheral magnet 5 3 disposed along the outer circumference of the upper surface of the support plate 51 so as to surround the center magnet 52 are used to make the polarity of the target side The magnetic field is changed so that the volume of the central magnet 52 is converted into the same magnetic volume, and the surrounding magnet 5 surrounded by the surrounding magnet is converted into the sum of the magnetized volumes (peripheral magnet: central magnet: The way the surrounding magnet=1: 2: 1) Meter. Thereby, in the front side of the sputtering surface 411 of the target 41, a tunnel-shaped magnetic flux M which is balanced with each other is formed. On the other hand, the electrons that have ionized -11 - 201100572 at the side of the target 41 (sputter surface 411) and the secondary electrons generated by sputtering are captured as 'by this'. The electron density in front of the target 41 is increased, and the plasma density can be increased and the sputtering rate can be increased. Further, the horizontal width of the support plate 51 is dimensioned to be smaller than the width of the target 41 (refer to FIG. 1), and is provided at the back surface of the support plate 51 of the magnet assembly 5. A nut member 51a is provided. At the nut member 5 1 a, a feed screw 61 is screwed, and at one end of the feed screw 61, a motor 62 is provided. Then, when the motor 62 is driven and the feed screw 61 is rotated, the magnet assembly 5 reciprocates along the back surface of the target 41 in a certain movement width D 1 in the lateral direction of the target 41. Thereby, the position where the magnetic flux density is high can be changed in the lateral direction of the target 41, and the splash surface 41 1 of the target 41 can be slightly eroded, and the utilization efficiency of the target 41 can be utilized. Upgrade. In this case, the moving width D1 of the magnet assembly 5 is preferably set so that the etching region extends in the sputtering surface 411 of the target 41 to the end portion in the lateral direction. Then, if the processing substrate S is transported to the position facing the target 41 via the substrate transfer means 2, the specific sputtering gas and the reaction gas are introduced through the gas introduction means 3, and then the sputtering is performed. When the power source 5 applies a negative DC voltage, an electric field perpendicular to the processing substrate S and the target 41 is formed, and plasma is generated in front of the sputtering surface 411 of the target 41, so that the target 41 is sputtered. On the surface of the substrate S, a film of a compound between the sputtered particles and the reaction gas thus formed is formed. -12- 201100572 Here, in the above-described sputtering apparatus 1, since the mask 45 is provided around the target 41, when the electric prize is generated in front of the beach plating surface 411, it is in the plasma. Electrons or secondary electrons flow toward the mask 45. As a result, at the peripheral region 421 of the sputtering surface 411 of the target 41, the plasma density is lowered, and the peripheral region 412 is not sputtered and remains as a non-erosion region (refer to Fig. 2 (a )). For example, if a conductive target of aluminum is used as the target 41, and a reaction gas made of oxygen is introduced, and a film of an oxide is formed by reactive sputtering, the reverse is caused by reactive sputtering. Stacked, at the peripheral region 412, the oxide system adheres and accumulates, and the peripheral region 412 is covered by the insulating film 1. If the film formation by sputtering is continued in this state, the electrons in the plasma or the secondary electrons are charged at the peripheral region 4 1 2 covered by the insulating film I (charge) Up) (Refer to Figure 2(b)). Therefore, it is necessary to set such that abnormal discharge caused by such charging is not induced.
^ 在本實施形態中，係設爲下述之構成：在濺鍍電源E 處，設置將已投入至標靶41中之電力的積算値計算出來 之算出手段，若是此算出了的積算値到達了特定値，則經 介於質量流控制器31來將對於濺鍍室11之反應氣體的導 入停止，並且經由基板搬送手段2來將假（dummy)基板 (未圖示）搬送至與標靶41相對向之位置處，而後’僅 將濺鍍氣體作導入，而對於標靶41作濺鍍。另外’所應 設定之積算時間、以及在反應氣體導入停止狀態下的標耙 4 1之濺鍍時間，係因應所使用之標靶41或是所導入之反 -13- 201100572 應氣體的種類，而適宜作設定。 藉由此，當投入至標靶41中之電力的積 特定値時，則判斷爲：由於反應性濺鑛時之逆 靶41之週緣區域412處係堆積了絕緣物I。而 反應氣體導入停止狀態下，而對於導電性之標 鍍，則從標靶4 1而來之導電性的濺鍍粒子， 漿中之氬離子相碰撞，並附著在標靶41之週 處而作逆堆積。 此時，絕緣膜I表面之充電電荷，係藉由 是電離了的濺鍍氣體離子而被作中和，或者是 常被作濺鍍而使身爲導電性的標靶之濺鍍面4: 域4 1 2間再度的導通，而流動至標靶4 1 2側並 週緣區域4 1 2之絕緣物I，係被身爲與標靶4 1 的導電性之薄膜F所覆蓋（亦即是，標靶4 411係包含其之外週緣部412地而成爲同電位 爲了將薄膜形成被作中斷之時間縮短並將生產 反.應氣體之導入停止狀態下的濺鍍時，係以將 E而來之投入電力設定爲較反應氣體導入時的 高爲理想。於此情況，當標靶爲鋁時，係只要 提高10%左右即可。 若是絕緣物I被導電性之薄膜F所覆蓋， 搬送手段2來將處理基板S搬送至與標靶41 置處，並使質量流控制器31作動，而再度開 之導入，並再度開始藉由反應性濺鍍而對於處 算値到達了 堆積，在標 後，若是在 靶41作濺 係例如與電 緣區域4 1 2 濺鍍粒子或 藉由由於恆 I 1與週緣區 消失。而， 相同之組成 1之濺鍍面 )。另外， 性提高，在 從濺鍍電源 投入電力更 將投入電力 則經由基板 相對向之位 始反應氣體 理基板S之 -14- 201100572 薄膜形成。 如此這般，在本實施形態中，由於係並未爲在對於1 枚之處理基板s的薄膜形成時而使從濺鍍電源E所對於標 靶41之投入電力作變化者，因此，能夠在維持於最適當 之濺鍍速率的狀態下，而對於標靶4 1作濺鍍，並能夠達 成高生產性。又，由於係將標靶41之週緣區域412，藉由 與此標靶4 1相同組成之導電膜而定期地作覆蓋，因此， 〇 起因於充電所產生的異常放電之誘發係被防止，而能夠一 直良好地對於標靶41作使用並進行薄膜形成，直到標靶 41之壽命結束爲止。進而，在爲了將對於被形成在標靶 41處之絕緣膜I的由於充電所造成之影響消除時，係並不 需要另外之構成零件，而不會有導致成本提高的事態。 另外，在上述實施形態中，較理想，係將在反應氣體 停止時之磁石組裝體5的移動幅度D2，設爲較反應氣體 導入（薄膜形成）時之移動幅度D1更小（參考圖4)。 ^ 於此情況，移動寬幅D2，係因應於所使用之標靶41或是 所導入之反應氣體的種類，而適宜作設定。藉由此’能夠 將磁通量密度變高之位置靠向標靶41之濺鍍面411的中 央側處，藉由此，在週緣區域412處而被作逆堆積之薄膜 F，係一直延伸至其之中央側處，而能夠將週緣區域4 1 2 藉由與標靶4 1相同組成之導電膜F來確實地作覆蓋。 [實施例1] 在本實施例1中，作爲標靶41，’係使用藉由週知之方 -15- 201100572 法而成形爲俯視略長方形之鋁製標靶，並接合在擋板42 處。又，作爲處理基板S，係使用玻璃基板，作爲濺鍍條 件，係對於質量流控制器3 1作控制，而將身爲濺鍍氣體 之氬氣的流量設爲45sCCm，將身爲反應氣體之氧氣的流 量設定爲15〇Sccm，並將對於標靶41之投入電力設定爲 1.8kW »而後，經由基板搬送手段2來將處理基板S搬送 至與標靶41相對向之位置處，並藉由反應性濺鍍，而在 處理基板s表面上依序形成了 ai2o3膜。於此情況，係將 1枚之處理基板的濺鍍時間，設爲了 930秒。在濺鍍中， 對於藉由濺鍍電源E而在每單位時間（1分鐘間）中所產 生之電弧放電作了計數。於此情況，係藉由將放電電壓降 低至基準値以下的現象檢測出來，而檢測出電弧放電之發 生。 此時，若是對於標靶之投入電力的積算値（kWh)到 達了 20kWh，則暫時停止氧氣之導入，並將氬氣之流量設 爲45SCCm，將對於標靶41之投入電力設定爲2.0kW，並 進行濺鍍，直到所堆積之膜的厚度到達了 5〇nm爲止，而 使其之週邊區域412成爲被薄膜F所覆蓋。 (比較例1 ) 作爲比較例1，採用與上述相同之條件，而藉由反應 性濺鍍來在處理基板S之表面上連續地依序形成Al2〇3膜 〇 若依據上述比較例1，則若是對於標靶4 1之投入電力 -16- 201100572 的積算値（kWh )超過了 2OkWh，則係在每一分鐘間而確 認有複數次之電弧放電的發生，若是超過22kWh，則電弧 放電係多數發生，而成爲無法進行由反應性濺鍍所致之薄 膜形成。相對於此，若依據實施例1，則就算是標靶41之 積算電力到達了 35kWh，在每一分鐘間之電弧放電的發生 次數，亦係爲1〜3次，而能夠進行由反應性濺鍍所致之 良好的薄膜形成。 〇 【圖式簡單說明】 [圖1]對於本發明之濺鍍裝置作模式性展示的圖。 [圖2] ( a)以及（b)，係爲對於進行了反應性濺鍍 時的標靶之狀態作說明之圖。 [圖3 ]對於實施了本發明後之標靶的狀態作說明之圖 〇 [圖4]對於磁石組裝體之移動作說明的圖。 〇 【主要元件符號說明】 1 :濺鍍裝置 u :濺鍍室 2 :基板搬送手段 3 :氣體導入手段 41 :標靶 5 :磁石組裝體 E1 :交流電源 -17- 201100572 S :處理基板 E :濺鍍電源 F :導電性薄膜 I :絕緣膜In the present embodiment, the calculation means for calculating the integrated 値 of the electric power that has been input into the target 41 is provided at the sputtering power source E, and the calculated integrated 値 arrives. When the specific flow is performed, the introduction of the reaction gas to the sputtering chamber 11 is stopped by the mass flow controller 31, and a dummy substrate (not shown) is transferred to the target via the substrate transfer means 2. 41 is opposed to the position, and then only the sputtering gas is introduced, and the target 41 is sputtered. In addition, the total calculation time to be set and the sputtering time of the standard 4 in the state in which the reaction gas is introduced are in accordance with the type of the target 41 used or the type of gas to be introduced. It is suitable for setting. Thereby, when the product of the electric power input into the target 41 is specified, it is judged that the insulator I is deposited at the peripheral region 412 of the counter target 41 at the time of reactive sputtering. When the reaction gas is introduced into the stopped state, the conductive plating is carried out from the target 41, and the argon ions in the slurry collide with each other and adhere to the periphery of the target 41. Reverse stacking. At this time, the charge charge on the surface of the insulating film I is neutralized by the ionized sputtering gas ions, or the sputtering surface 4 which is often used as a target of conductivity by sputtering: The region 4 1 2 is again turned on, and the insulator I flowing to the target 4 1 2 side and the peripheral region 4 1 2 is covered by the film F which is electrically conductive with the target 4 1 (that is, When the target 4 411 includes the outer peripheral portion 412 and becomes the same potential, in order to shorten the time during which the film formation is interrupted and the sputtering of the production gas is stopped, the E is The input power is preferably set to be higher than when the reaction gas is introduced. In this case, when the target is aluminum, it is only required to be increased by about 10%. If the insulator I is covered with the conductive film F, it is transported. The means 2 transports the processing substrate S to the target 41, and causes the mass flow controller 31 to actuate, and then re-introduces the introduction, and again begins to recombine by the reactive sputtering. After the standard, if the target 41 is sputtered, for example, the electrode edge region 4 1 2 is sputtered or borrowed. Since the constant I 1 and the peripheral zone disappear, the same composition 1 of the sputtered surface). In addition, the performance is improved, and when the power is supplied from the sputtering power source, the power is supplied to the substrate, and the film is formed by the reaction substrate S-14-201100572. In this manner, in the present embodiment, since the input power to the target 41 from the sputtering power source E is not changed when the film of the one processing substrate s is formed, it is possible to Maintaining at the most appropriate sputtering rate, the target 41 is sputtered, and high productivity can be achieved. Further, since the peripheral region 412 of the target 41 is periodically covered by the conductive film having the same composition as the target 41, the induction of abnormal discharge due to charging is prevented. It is possible to use the target 41 all the time and perform film formation until the end of the life of the target 41. Further, in order to eliminate the influence on the insulating film I formed at the target 41 due to charging, no additional constituent parts are required, and there is no situation that causes an increase in cost. Further, in the above-described embodiment, it is preferable that the movement width D2 of the magnet assembly 5 when the reaction gas is stopped is set to be smaller than the movement width D1 when the reaction gas is introduced (film formation) (refer to FIG. 4). . ^ In this case, the moving width D2 is appropriately set depending on the target 41 to be used or the type of the reaction gas to be introduced. The film F which is capable of increasing the magnetic flux density is directed toward the center side of the sputtering surface 411 of the target 41, whereby the film F which is reversely deposited at the peripheral region 412 is extended to the same. At the center side, the peripheral region 4 1 2 can be surely covered by the conductive film F having the same composition as the target 41. [Embodiment 1] In the first embodiment, as the target 41, a target made of aluminum having a substantially rectangular shape in plan view by a known method of -15-201100572 was used and joined to the baffle 42. Further, as the processing substrate S, a glass substrate is used, and as the sputtering condition, the mass flow controller 31 is controlled, and the flow rate of the argon gas which is a sputtering gas is 45 sCCm, and the reaction gas is used. The flow rate of the oxygen gas is set to 15 〇 Sccm, and the input power to the target 41 is set to 1.8 kW. Then, the processing substrate S is transported to the position opposite to the target 41 via the substrate transfer means 2, and by Reactive sputtering, while forming an ai2o3 film on the surface of the treated substrate s. In this case, the sputtering time of one of the processing substrates was set to 930 seconds. In the sputtering, the arc discharge generated per unit time (1 minute) by the sputtering power source E was counted. In this case, the occurrence of the arc discharge is detected by detecting the phenomenon that the discharge voltage is lowered below the reference 値. At this time, if the integrated enthalpy (kWh) of the target input power reaches 20 kWh, the introduction of oxygen is temporarily stopped, and the flow rate of the argon gas is set to 45 SCCm, and the input power to the target 41 is set to 2.0 kW. Sputtering is performed until the thickness of the deposited film reaches 5 〇 nm, and the peripheral region 412 is covered by the film F. (Comparative Example 1) As Comparative Example 1, an Al 2 〇 3 film was successively formed on the surface of the handle substrate S by reactive sputtering under the same conditions as described above, according to Comparative Example 1 described above. If the integrated enthalpy (kWh) of the input power of the target 41 - 201100572 exceeds 2OkWh, the occurrence of multiple arc discharges is confirmed every minute. If it exceeds 22 kWh, the arc discharge is mostly Occurs, and film formation by reactive sputtering cannot be performed. On the other hand, according to the first embodiment, even if the integrated electric power of the target 41 reaches 35 kWh, the number of occurrences of arc discharge per minute is also 1 to 3 times, and reactive splashing can be performed. Good film formation due to plating. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A diagram showing a schematic display of a sputtering apparatus of the present invention. [Fig. 2] (a) and (b) are diagrams for explaining the state of the target when reactive sputtering is performed. Fig. 3 is a view for explaining a state of a target after the present invention is performed. Fig. 4 is a view for explaining movement of a magnet assembly. 〇 [Description of main component symbols] 1 : Sputtering device u : Sputtering chamber 2 : Substrate transfer means 3 : Gas introduction means 41 : Target 5 : Magnet assembly E1 : AC power supply -17 - 201100572 S : Processing substrate E : Sputtering power supply F: Conductive film I: Insulating film
-18--18-