CN202465951U - Special polycrystalline graphite heating plate - Google Patents
Special polycrystalline graphite heating plate Download PDFInfo
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- CN202465951U CN202465951U CN201220001917XU CN201220001917U CN202465951U CN 202465951 U CN202465951 U CN 202465951U CN 201220001917X U CN201220001917X U CN 201220001917XU CN 201220001917 U CN201220001917 U CN 201220001917U CN 202465951 U CN202465951 U CN 202465951U
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- hot
- heating
- heating plate
- polycrystalline graphite
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Abstract
The utility model provides a special polycrystalline graphite heating plate. The special polycrystalline graphite heating plate comprises two big top front heating plates, two small top back heating plates and a U-shaped heating plate which are assembled together; and the special polycrystalline graphite heating plate is characterized in that the big top front heating plates and the small top back heating plates at the connecting positions are thickened and widened. According to the utility model, through increasing the widths or thicknesses of the local top heating plates, the heating powers at the local positions are reduced, so that the heating power of the whole heating system tends to be homogenized and the state consistency at each position of the silicon material melting and crystal growing stage in a horizontal direction is improved.
Description
Technical field
The utility model relates to the graphite heating plate technical field, particularly relates to a kind of square polycrystalline ingot furnace that is applicable to and uses graphite heating plate.
Background technology
The production technique of silicon for solar cell mainly contains pulling of silicon single crystal and polycrystalline ingot casting silicon at present, and polycrystalline ingot casting technology comparatively speaking is comparatively simple, is easy to large-scale production, and cost is lower.Polycrystalline ingot casting silicon is the method that adopts directional freeze; Its principle is that the silicon stockpile is placed in the quartz crucible; Quartz crucible is placed in the plumbago crucible that is spliced into by four blocks of plumbago crucible side plates and plumbago crucible base plate; Integral body places thermal field heating and melting silicon material, controls longitudinally the temperature difference then and cools off gradually, forms columnar silicon crystalline structure from bottom to top.
Graphite material is widely used in polycrystalline ingot furnace thermal field owing to have advantages such as excellent thermostability, processibility, intensity, price.
Existing polycrystalline silicon ingot or purifying furnace is five hot types mostly, and is as illustrated in fig. 1 and 2.Little hot-plate 2 and a U type hot-plate 3 are assembled behind top big hot-plate 1 before by two tops, two tops; The four sides of side direction is four snakelike side hot-plates, links to each other with the bight web plate.Top and side are respectively drawn three electrodes 4 and are joined three phase supply with the external copper electrode.The heating system of this design is because back two side positions (being the left and right sides, Fig. 1 middle and lower part) top heat plate and two side heat plate heating stacks are more; The fusing of material stage is the fastest changing; The long brilliant stage solidifies the slowest; So be prone to occur the impurity aggregation phenomenon herein, do not wait according to power distribution situation severity, influence ingot quality.Because gathering partially of impurity, hot-plate local corrosion situation is serious than other positions, and the life-span shortens.
Summary of the invention
The purpose of the utility model is to improve the higher problem of heating system local pyrexia power, alleviates gathering partially and the local corrosion situation of hot-plate of ingot casting surface impurity, increases hot-plate life-span and final polycrystalline ingot quality.
The utility model proposes a kind of special-shaped polycrystalline graphite hot-plate; Comprise that little hot-plate and a U-shaped hot-plate are assembled behind big hot-plate before two tops, two tops, it is characterized in that before the said top that the hot-plate of little hot-plate connecting position is thickeied, widened behind the big hot-plate and said top.
Wherein, described hot-plate thickness on the basis of original size increases 0-20mm, and width increases 0-60mm, and size increases scope and do not comprise 0.
The utility model is through strengthening partial width of top heat plate or thickness; Reduce the heating power of this local location; Weaken heating Overlay with the side hot-plate; Thereby make the heating power of whole heating systems be tending towards homogenizing, it is more even that the silicon material is heated, and improves each location status consistence of fusing of silicon material and long brilliant stage horizontal direction.
Description of drawings
Fig. 1 is the packaging assembly synoptic diagram of existing graphite heating sleeve-board;
Fig. 2 is the structural representation of the preceding big hot-plate in existing top;
Fig. 3 is the packaging assembly synoptic diagram of the utility model embodiment graphite heating sleeve-board;
Fig. 4 pushes up the structural representation of preceding big hot-plate for the utility model embodiment.
Embodiment
Shown in Fig. 3 and 4, in an embodiment of the utility model, polycrystalline silicon ingot or purifying furnace is five hot types, and little hot-plate 2 and a U type hot-plate 3 are assembled behind hot-plate top big hot-plate 1 before by two tops, two tops.The four sides of side direction is four snakelike side hot-plates, links to each other with the bight web plate.Top and side are respectively drawn three electrodes 4 and are joined three phase supply with the external copper electrode.The preceding big hot-plate 1 in top is thickeied, is widened with the hot-plate 5 of little hot-plate 2 connecting positions in back, top.Thickness direction begins thickness from link position and draws close transition gradually to interior thickness, and maximum ga(u)ge place in connection portion has increased 6mm, and maximum ga(u)ge is 15-40mm; Width link position the widest part has increased 50mm, and the wideest 50-150mm of link position draws close with intermediate width then gradually.Present embodiment preferably resolves the polycrystalline ingot casting impurity that runs in this reality and gathers problem partially, has improved the polycrystalline ingot quality.And the hot-plate design is good, and is good according to the work-ing life of feedback hot-plate.
Described in this specification sheets is preferred embodiment of the present invention, and above embodiment is only in order to explain technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within scope of the present invention under this invention's idea through the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (2)
1. special-shaped polycrystalline graphite hot-plate; Comprise that little hot-plate and a U-shaped hot-plate are assembled behind big hot-plate before two tops, two tops, it is characterized in that before the said top that the hot-plate of little hot-plate connecting position is thickeied, widened behind the big hot-plate and said top.
2. big hot-plate before the polycrystalline as claimed in claim 1 top is characterized in that described hot-plate thickness on the basis of original size increases 0-20mm, and width increases 0-60mm, and size increases scope and do not comprise 0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220001917XU CN202465951U (en) | 2012-01-05 | 2012-01-05 | Special polycrystalline graphite heating plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220001917XU CN202465951U (en) | 2012-01-05 | 2012-01-05 | Special polycrystalline graphite heating plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202465951U true CN202465951U (en) | 2012-10-03 |
Family
ID=46914128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220001917XU Expired - Lifetime CN202465951U (en) | 2012-01-05 | 2012-01-05 | Special polycrystalline graphite heating plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202465951U (en) |
-
2012
- 2012-01-05 CN CN201220001917XU patent/CN202465951U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121003 |
|
| CX01 | Expiry of patent term |