CN202423371U

CN202423371U - Visible light full spectrum LED packaging structure with high reflectivity

Info

Publication number: CN202423371U
Application number: CN2011203082429U
Authority: CN
Inventors: 曹永革; 刘著光; 邓种华; 王充; 兰海; 王方宇; 王文超
Original assignee: Fujian Institute of Research on the Structure of Matter of CAS
Current assignee: Fujian Institute of Research on the Structure of Matter of CAS
Priority date: 2011-08-20
Filing date: 2011-08-20
Publication date: 2012-09-05
Anticipated expiration: 2021-08-20

Abstract

The utility model provides an LED packaging pedestal and a packaging structure, capable of raising light effect and color rendering index of a white light LED and reducing light decay by utilizing a nonmetal or a metallic compound or an organic matter material having visible light full spectrum high reflectivity, wherein the wavelength scope of the visible light full spectrum ranges from 400nm to 760nm; and the reflectivity of the high reflectivity material in the visible light spectrum is greater than 85%. The LED packaging pedestal (10) is characterized in that: one surface (101) of the LED packaging pedestal applicable to solid crystal is coated with a film or a coating of visible light full spectrum high reflectivity made of nonmetal/metallic compound or organic material; and the pedestal (10) itself is made of nonmetal/metallic compound or organic material having high reflectivity, with the upper surface (101) thereof having visible light full spectrum high reflectivity. The LED packaging (20) is characterized in that: the surface (102) or (101) having high reflectivity adopts the solid crystal to install an LED chip; and the chip is connected with a substrate electrode (501) and substrate electrode (502).

Description

The full spectrum high reflectance of a kind of visible light LED encapsulating structure

Technical field

The utility model relates to a kind of new LED encapsulating structure, refers more particularly to a kind of raising LED light efficiency and shows index, reduces the encapsulation base of light decay.

Background technology

LED is as a kind of new type light source, owing to have energy-saving and environmental protection, the life-span is long, toggle speed is fast, can control luminescent spectrum and forbid making the more high conventional light source incomparable advantage of colorfulness obtain unprecedented development with the size of the width of cloth.

Generally speaking, traditional White-light LED package structure is like Fig. 1; Mainly be provided with the pedestal A of a tool groove A1; The interior chip B that combines of this groove A1, this chip B links through a tie line C and another support D again, the last ejection formation that passes through a photic zone E again; Pedestal A, chip B, tie line C and another support D are combined as a whole, accomplish the encapsulation of LED.

But common LED luminous be each to, simultaneously the light that sends of institute's excited fluorescent powder also be each to.And above-mentioned traditional LED structure makes the extraction efficiency of light of the directive led chip back side and side lower, and this part light is through the repeatedly reflection in sealer and refraction and finally be converted into heat.So not only reduced the light efficiency of LED, but also made heat in time to derive and accumulate in the back side of chip.Thereby cause the temperature of chip to raise gradually, so that influence the light output and the life-span of led chip.

Present improving one's methods is the metal A g film that in the groove A1 of pedestal A, plates high reflectance, and the reflectivity of pedestal is significantly improved.But this brings a problem again, and metal A g film is jaundice variable color easily under the high temperature of the led chip of lighting, thereby has reduced the reflectivity of blue wave band, has reduced the light efficiency and the color rendering index of packaged LED, has accelerated the light decay of LED.

Based on existing common LED encapsulating structure with and the deficiency of improving one's methods, the utility model has designed " the solid brilliant LED encapsulation scheme of the high reflection substrate of the full spectrum of a kind of visible light ".

Summary of the invention

The utility model is intended to solve the foregoing problems of prior art, so a purpose of the utility model provides a kind of durable high reflectance pedestal and LED encapsulating structure in total visible light spectrum, stablized.To improve the light extraction efficiency of white light LEDs, strengthen the stability of white light LEDs color rendering index and luminous flux simultaneously.

The purpose of the utility model and solve its technical problem and adopt following technical scheme to realize:

The utility model provides the LED encapsulating structure of the full spectrum high reflectance of a kind of visible light; Comprise: one is coated with encapsulation base nonmetal or metallic compound or full spectrum high reflectivity film of organic visible light or coating; Or this encapsulation base of processing as the nonmetal or metallic compound or the organic substance material of the full spectrum high reflectance of visible light; Wherein wavelength of visible light is 400nm-760nm, and the reflectivity of visible light wave range all is higher than 85%; On encapsulation base, be formed with electrode; Blue-light LED chip, chip adopt solid crystal type to be fixed on the high reflecting surface of encapsulation base; And sealer, sealer covers said led chip and said pedestal, to protect the high reflectance surface of said led chip and high reflectance pedestal.

Be coated with the encapsulation base of film or coating, its film or coating are plated on the one side that is used for solid crystalline substance on the pedestal; Encapsulation base is originally processed as the material of the full spectrum high reflectance of visible light, and its one side that is used for solid crystalline substance has high reflectance at visible light wave range.

The LED encapsulating structure that the utility model provides is as shown in Figure 2; It comprises that being coated with the high reflection of the full spectrum of visible

light encapsulation base

10 or 10 nonmetal or metallic compound or organic substance materials as the full spectrum high reflectance of visible light of encapsulation base nonmetal or metallic compound or organic thin film or coating 102 processes; The one side 101 that is used for solid crystalline substance for the encapsulation base that is coated with film or coating 10 is coated with high reflective film of the full spectrum of visible light or coating 102; Be formed with two

electrodes

501 and 502 on it simultaneously; Process as the material of the full spectrum high reflectance of visible light for 10 of encapsulation bases, its one side that is used for solid crystalline substance is higher than 85% at the average reflectance of visible light wave range; Be formed with two

electrodes

501 and 502 on it simultaneously; Blue-light LED chip 20, chip adopt solid crystal type to be fixed on the high reflectance surface 102 of encapsulation base; And sealer 40, sealer covers said led chip 20 and said high reflectance surface 102, to protect said led chip and high reflectance surface.

Described for the encapsulation base that is coated with high reflective film of the full spectrum of visible light or coating, its film or coating are positioned at the below on said led chip plane of living in and are close to it and parallel, and film or coating all are higher than 85% at the reflectivity of the full spectrum of visible light.

Described this is processed as the nonmetallic materials of the full spectrum high reflectance of visible light for encapsulation base, and its one side that is used for solid crystalline substance is close to the below on led chip plane of living in and with it and is parallel, and the full spectral reflectivity of visible light all is higher than 85%.

The high reflection of the full spectrum of described visible light both can be the burnishing surface with direct reflection, also can be to have irreflexive non-polished surface.The high reflective film of the full spectrum of visible light for direct reflection can be the Bragg mirror film that deposits in the group that is selected from SiO2, TiO2, MgF, Al2O3, Ta2O5, ZrO2 and Hf2O5 composition, also can be the 2 D photon crystal material that is selected from the group of being made up of SiO2, ZrO2, TiO2.For the full spectrum high reflectivity film of visible light of the non-polished surface of scattering or coating or pedestal can be the material that is selected from the group that high purity aluminium oxide, magnesia, titanium oxide, barium monoxide, calcium phosphate, barium phosphate, barium sulfate, calcium silicates form, but is not limited only to above-mentioned material.

Saidly comprise the printed circuit board (PCB) that is formed with electrode above that, metal, nonmetal, metallic compound or organic substance pedestal for the encapsulation base that is coated with the full spectrum of visible light high reflection nonmetal film or coating.

Said sealer is by mixing within it and evenly disperseing the transparent epoxy resin glue or the silica gel moulding of fluorophor to process.

The utility model a kind of New LED chip-packaging structure is provided, its can usable reflection since led chip and fluorescent material each to luminous and light directive pedestal and side, with this part light through reflection after by the front ejaculation, increased the light efficiency of LED like this.Because material adopts compound film, and its chemical stability at high temperature obviously is better than the Ag film, and the stability of the color rendering index of the LED of making easy to change is not enhanced, light decay also obviously reduces simultaneously.

Other characteristics of the utility model and specific embodiment can further be understood in the detailed description of following conjunction with figs..

Description of drawings

Below in conjunction with accompanying drawing and embodiment the utility model is further specified.

Fig. 1 is the encapsulating structure of existing common LED chip;

Fig. 2 is the overall structure end view of the utility model embodiment;

Fig. 3 is the overall structure vertical view of the utility model embodiment;

Fig. 4 is the reflectivity of the high reflective film of the full spectrum of the visible light of the utility model embodiment;

Embodiment

With reference to Fig. 2 and Fig. 3, the utility model is to implement like this:

On the upper surface 101 of aluminum LED encapsulation base 10, utilize magnetron sputtered deposition technology deposition SiO2/TiO2 Prague highly reflecting films 102; Wherein the design of film system is according to being the high reflectivity film design in 1.5 the silica gel in refractive index; Its reflectivity is seen Fig. 4, and structure is shown in table 1.

Numbering	Material	Thickness (nm)
			18	TiO ₂	68
17	SiO ₂	129
			16	TiO ₂	68
15	SiO ₂	110
			14	TiO ₂	75
13	SiO ₂	106
			12	TiO ₂	63
11	SiO ₂	124
			10	TiO ₂	64
9	SiO ₂	85
			8	TiO ₂	41
7	SiO ₂	75
			6	TiO ₂	50
5	SiO ₂	89
			4	TiO ₂	50
3	SiO ₂	75
			2	TiO ₂	38
1	SiO ₂	77
			--	The Al substrate	--

Table 1

Pre-designed

electrode

501 and 502 is placed on the relevant position of pedestal 10, and fixes with AB glue.

On SiO2/TiO2 Prague highly reflecting films 102, utilize transparent crystal-bonding adhesive 201 that blue-light LED chip 20 is fixed on it, and in 150 ℃ baking oven, toasted 2 hours, crystal-bonding adhesive is solidified.

Two electrodes that utilize gold thread 30 will accomplish the led chip of solid crystalline substance are drawn respectively and are welded in respectively on two

electrodes

501 and 502 on the pedestal.

Be that 1.5 transparent silica gel is evenly mixed and vacuum defoamation with YAG fluorescent material with refractive index, evenly disperseed to utilize behind the silica gel of fluorescent material point gum machine with led chip 20 and highly reflecting films 102 embeddings of SiO2/TiO2 Prague in silica gel 40.Packaged LED was toasted 1 hour down at 130 ℃, toasted 3 hours down at 150 ℃ then,, accomplish whole encapsulating structure so that silica gel solidifies.

With reference to Fig. 2 and Fig. 3, another embodiment and above enforcement are listed as similar, and just the SiO2/TiO2 Prague highly reflecting films 102 with above embodiment are changed to the barium sulfate coating of utilizing spraying, and all the other steps are identical.

Implement the preferred embodiment that row only are two kinds of LED encapsulation of the utility model for the above two kinds; Be not that the technical scope of the utility model is done any restriction; Every technical spirit according to the utility model all still belongs to the technology contents and the scope of the utility model to top any trickle modification, equivalent variations and modification that embodiment did.

Claims

1. the LED encapsulating structure of the full spectrum high reflectance of visible light, it is characterized by: this encapsulating structure comprises: one has the encapsulation base of the full spectrum high reflectance of visible light; On encapsulation base, be formed with electrode; Blue-light LED chip, chip adopt solid crystal type to be fixed on the high reflecting surface of encapsulation base; And sealer, sealer covers said led chip and said pedestal, to protect the high reflectance surface of said led chip and pedestal.

2. LED encapsulating structure according to claim 1 is characterized in that: the one side that is used for solid crystalline substance on the pedestal has high reflectance at visible light wave range.

3. LED encapsulating structure according to claim 1 is characterized in that: the wave-length coverage of the full spectrum of visible light is 400nm to 760nm, and the encapsulation base of the full spectrum high reflectance of visible light all is higher than 85% at the reflectivity of visible light wave range.

4. LED encapsulating structure according to claim 1 is characterized in that: the encapsulation base of the full spectrum high reflectance of said visible light is positioned at the below on said led chip plane of living in and is close to it and parallel.

5. LED encapsulating structure according to claim 1 is characterized in that: the high reflection of the full spectrum of described visible light encapsulation base is selected the burnishing surface with direct reflection for use, or selects the non-polished surface with scattering for use.