CN103915551A - Novel white-light LED packaging structure and manufacturing method - Google Patents
Novel white-light LED packaging structure and manufacturing method Download PDFInfo
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- CN103915551A CN103915551A CN201410104212.4A CN201410104212A CN103915551A CN 103915551 A CN103915551 A CN 103915551A CN 201410104212 A CN201410104212 A CN 201410104212A CN 103915551 A CN103915551 A CN 103915551A
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- wafer
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- reflection film
- yag
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a novel white-light LED packaging structure and a manufacturing method. A blue-light antireflection film is plated on the surface, attached to a blue-light chip, of a fluorescence wafer, the blue-light antireflection film on the surface of the wafer can effectively prevent incident blue light from being reflected by the surface of the wafer, the utilization rate of the blue light is increased, reflection loss of green-yellow light in the direction of the chip is reduced, and overall luminous efficiency of a device is effectively improved. The novel white-light LED packaging structure is high in fluorescence efficiency and applicable to the field of high-power white-light LED lighting.
Description
Technical field
The present invention relates to LED lighting technical field, particularly a kind of novel white-light LED encapsulating structure and manufacture method.
Background technology
LED is a kind of solid-state semiconductor device, and it can be directly luminous energy electric energy conversion.Compared with traditional incandescent lamp, fluorescent lamp, white light LEDs has the advantages such as power consumption is little, luminous efficiency is high, long service life, energy-conserving and environment-protective, and therefore it is not only widely used in normal lighting field, and enters field of display devices.At present, the technology of obtaining white light LEDs can be divided into two large classes, that is: (1) adopts three kinds of LED chips of transmitting red, green, blue coloured light line to mix; (2) adopt monochromatic (blue light or ultraviolet) LED chip to excite suitable fluorescent material.White light LEDs is mainly to utilize blue-light LED chip and fluorescent material Ce:YAG that can effectively be excited by blue light, Yellow light-emitting low temperature combination at present, and recycling lens principle is mixed complementary gold-tinted and blue light, thereby obtains white light.
Adopt at present fluorescent crystal to substitute fluorescent material, the shortcomings such as fluorescent material launching efficiency and light conversion efficiency are low to overcome, lack of homogeneity, but common fluorescent crystal structure is single, and performance is not optimized.
Summary of the invention
The technical problem to be solved in the present invention is to overcome defect of the prior art, a kind of novel white-light LED encapsulating structure is provided, at the one side plating blue light anti-reflection film of fluorescence wafer and blue chip laminating, utilize lens principle that the blue light of chip and wafer are transformed to the green-yellow light sending and mixed, obtain white light.The blue light anti-reflection film of wafer surface can effectively be avoided the reflection of incident blue light in wafer surface, increases the utilance of blue light, reduces the reflection loss of green-yellow light in chip direction simultaneously, effectively improves the overall light efficiency of device.This White-light LED package structure has high fluorescence efficiency, is applicable to large power white light LED lighting field.
For addressing the above problem, the invention provides a kind of novel white-light LED encapsulating structure, comprise blue chip, fit in the fluorescence wafer on described blue chip, in the one side of described fluorescence wafer and the laminating of described blue chip, be coated with blue light anti-reflection film.
Further, described fluorescence wafer main component is Ce:YAG.
Further, described blue light anti-reflection film main component is a kind of or its mixture in titanium oxide, silica, aluminium oxide, zirconia.
Further, described blue light anti-reflection film transmission region is 420nm～470nm.
Further, described blue light anti-reflection film arranges multilayer.
In order to address the above problem, the present invention also provides a kind of manufacture method of novel white-light LED encapsulating structure, comprises the following steps:
(1) make Ce:YAG wafer by czochralski method, temperature gradient method or kyropoulos;
(2) Ce:YAG wafer step (1) being made cuts polishing and obtains the fluorescence wafer of required size;
(3) on the Ce:YAG wafer making in step (2), adopt the mode one side plating blue light anti-reflection film of physical vapour deposition (PVD);
(4) one side of Ce:YAG wafer plated film step (3) being made is fitted on blue chip, encapsulates.
The White-light LED package structure of the employing fluorescence wafer that employing the inventive method makes, compared with prior art, has following beneficial effect:
1) compare fluorescent material, Ce:YAG fluorescence wafer launching efficiency and the light conversion efficiency of plated film are high; Good uniformity; Materialization is good; Light decay is little.
2) compare common Ce:YAG fluorescence wafer, the Ce:YAG fluorescence wafer of plating blue light anti-reflection film has higher light efficiency, and the light efficiency of its white light LED part is than high by 5～10% with the device of common wafer.
3) the blue light anti-reflection film of wafer surface can reach 99.5% to the transmitance of 420nm～470nm wave band blue light, and the excitation wavelength peak position of the blue chip of current white light LEDs is in 448nm left and right, so can effectively avoid the reflection of incident blue light in wafer surface, increase the utilance of blue light, the green-yellow light total reflection of blue light anti-reflection film to 500nm～730nm simultaneously, reduce the reflection loss of green-yellow light in chip direction, effectively improve the overall light efficiency of device.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention
Fig. 2 is the transmittance curve that plates the fluorescence wafer of blue light anti-reflection film in embodiment 1
Fig. 3 adopts the relative energy distribution curve that adopts common wafer in the wafer of blue light anti-reflection film and comparative example in embodiment 1
In figure, 1, Ce:YAG fluorescence wafer; 2, blue chip; 3, blue light anti-reflection film; 4, adopt the energy distribution curve of blue light anti-reflection film wafer; 5, adopt the energy distribution curve of common wafer
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Be illustrated in figure 1 the structural representation of embodiments of the invention, a kind of novel white-light LED encapsulating structure, comprise blue chip 2, fit in the Ce:YAG fluorescence wafer 1 on described blue chip, in the one side that described fluorescence wafer 1 and described blue chip 2 are fitted, be coated with blue light anti-reflection film 3.Fluorescence wafer 1 main component is Ce:YAG, makes by czochralski method, temperature gradient method or kyropoulos.Blue light anti-reflection film 3 arranges multilayer, and main component is a kind of or its mixture in titanium oxide, silica, aluminium oxide, zirconia.Its transmission region is 420nm～470nm.
While making novel white-light LED encapsulating structure, first prepare Ce doping YAG by czochralski method, temperature gradient method or kyropoulos; Then, to the Ce doping YAG polishing making, make the fluorescence wafer of required size, can select strip, sheet or circle according to needs of production, do not limit at this; Then on the Ce:YAG wafer making, adopt the mode one side plating blue light anti-reflection film of physical vapour deposition (PVD); Finally the one side of Ce:YAG wafer plated film is fitted on blue chip, encapsulates.
Embodiment 1
Prepare Ce doping YAG by czochralski method, to the Ce:YAG wafer polishing making, make thickness 0.3mm, the circular wafer of diameter 50mm, the 10 layers of blue light anti-reflection film of circular wafer one side plating that making, then wafer is cut into the square little wafer that the length of side is 4mm, finally the one side of little wafer plated film is close to blue chip, be packaged into white light LED part.
Embodiment 2
Prepare Ce doping YAG by czochralski method, to the Ce:YAG wafer polishing making, make thickness 0.35mm, the circular wafer of diameter 50mm, the 15 layers of blue light anti-reflection film of circular wafer one side plating that making, then wafer is cut into the square little wafer that the length of side is 5mm, finally the one side of little wafer plated film is close to blue chip, be packaged into white light LED part.
Embodiment 3
Prepare Ce doping YAG by czochralski method, to the Ce:YAG wafer polishing making, make thickness 0.4mm, the circular wafer of diameter 75mm, the 20 layers of blue light anti-reflection film of circular wafer one side plating that making, then wafer is cut into the square little wafer that the length of side is 5mm, finally the one side of little wafer plated film is close to blue chip, be packaged into white light LED part.
Comparative example
Prepare Ce doping YAG by czochralski method, to the Ce:YAG wafer polishing making, make thickness 0.3mm, the circular wafer of diameter 50mm, then wafer is cut into the square little wafer that the length of side is 4mm, finally the one side of little wafer plated film is close to blue chip, be packaged into white light LED part.
Fig. 2 is the transmittance curve that plates the fluorescence wafer of blue light anti-reflection film in embodiment 1, and the fluorescence wafer of plating blue light anti-reflection film reaches 99.5% to the transmitance of 420nm～470nm wave band blue light.
Fig. 3 adopts the relative energy distribution curve that adopts common wafer in the wafer of blue light anti-reflection film and comparative example in embodiment 1.Adopt the white-light LED structure light efficiency of the wafer of blue light anti-reflection film: 158.5; Colour temperature: 6723K; Color rendering index: 66.5; Adopt the white-light LED structure light efficiency of common wafer: 145.8; Colour temperature: 6065K; Color rendering index: 65.0.Visible, adopt the white-light LED structure of the wafer of plating blue light anti-reflection film to there is more excellent light efficiency.
The White-light LED package structure of the employing fluorescence wafer that employing the inventive method makes, compared with prior art, has following beneficial effect:
1) compare fluorescent material, Ce:YAG fluorescence wafer launching efficiency and the light conversion efficiency of plated film are high; Good uniformity; Materialization is good; Light decay is little.
2) compare common Ce:YAG fluorescence wafer, the Ce:YAG fluorescence wafer of plating blue light anti-reflection film has higher light efficiency, and the light efficiency of its white light LED part is than the high 5-10% of device with common wafer.
3) the blue light anti-reflection film of wafer surface can reach 99.5% to the transmitance of 420nm～470nm wave band blue light, and the excitation wavelength peak position of the blue chip of current white light LEDs is in 448nm left and right, so can effectively avoid the reflection of incident blue light in wafer surface, increase the utilance of blue light, the green-yellow light total reflection of blue light anti-reflection film to 500nm～730nm simultaneously, reduce the reflection loss of green-yellow light in chip direction, effectively improve the overall light efficiency of device.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. a novel white-light LED encapsulating structure, is characterized in that: comprise blue chip, fit in the fluorescence wafer on described blue chip, in the one side of described fluorescence wafer and the laminating of described blue chip, be coated with blue light anti-reflection film.
2. LED encapsulating structure according to claim 1, is characterized in that: described fluorescence wafer main component is Ce:YAG.
3. LED encapsulating structure according to claim 2, is characterized in that: described blue light anti-reflection film main component is a kind of or its mixture in titanium oxide, silica, aluminium oxide, zirconia.
4. LED encapsulating structure according to claim 3, is characterized in that: described blue light anti-reflection film transmission region is 420nm～470nm.
5. LED encapsulating structure according to claim 4, is characterized in that: described blue light anti-reflection film arranges multilayer.
6. a manufacture method for novel white-light LED encapsulating structure, is characterized in that, comprises the following steps:
(1) make Ce:YAG wafer by czochralski method, temperature gradient method or kyropoulos;
(2) Ce:YAG wafer step (1) being made cuts polishing and obtains the fluorescence wafer of required size;
(3) on the Ce:YAG wafer making in step (2), one side adopts the mode of physical vapour deposition (PVD) to plate blue light anti-reflection film;
(4) one side of Ce:YAG wafer plated film step (3) being made is fitted on blue chip, encapsulates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410104212.4A CN103915551A (en) | 2014-03-20 | 2014-03-20 | Novel white-light LED packaging structure and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410104212.4A CN103915551A (en) | 2014-03-20 | 2014-03-20 | Novel white-light LED packaging structure and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103915551A true CN103915551A (en) | 2014-07-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410104212.4A Pending CN103915551A (en) | 2014-03-20 | 2014-03-20 | Novel white-light LED packaging structure and manufacturing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098900A (en) * | 2016-07-29 | 2016-11-09 | 昆山锐峰晶体材料有限公司 | High density led light source structure and preparation method thereof |
| CN112133812A (en) * | 2020-09-15 | 2020-12-25 | 湖州市汉新科技有限公司 | High-thermal-conductivity fluorescent film, preparation method and application in LED or laser illumination |
| CN112420899A (en) * | 2020-09-29 | 2021-02-26 | 湖州市汉新科技有限公司 | High-color rendering index high-thermal conductivity fluorescent film, preparation method and application in display equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202996898U (en) * | 2012-10-24 | 2013-06-12 | 中国科学院福建物质结构研究所 | White light LED chip |
-
2014
- 2014-03-20 CN CN201410104212.4A patent/CN103915551A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202996898U (en) * | 2012-10-24 | 2013-06-12 | 中国科学院福建物质结构研究所 | White light LED chip |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098900A (en) * | 2016-07-29 | 2016-11-09 | 昆山锐峰晶体材料有限公司 | High density led light source structure and preparation method thereof |
| CN112133812A (en) * | 2020-09-15 | 2020-12-25 | 湖州市汉新科技有限公司 | High-thermal-conductivity fluorescent film, preparation method and application in LED or laser illumination |
| CN112420899A (en) * | 2020-09-29 | 2021-02-26 | 湖州市汉新科技有限公司 | High-color rendering index high-thermal conductivity fluorescent film, preparation method and application in display equipment |
| CN112420899B (en) * | 2020-09-29 | 2022-06-14 | 湖州市汉新科技有限公司 | High-color rendering index high-thermal conductivity fluorescent film, preparation method and application in display equipment |
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Application publication date: 20140709 |