CN206259381U - High density led light source structure - Google Patents
High density led light source structure Download PDFInfo
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- CN206259381U CN206259381U CN201620817608.8U CN201620817608U CN206259381U CN 206259381 U CN206259381 U CN 206259381U CN 201620817608 U CN201620817608 U CN 201620817608U CN 206259381 U CN206259381 U CN 206259381U
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Abstract
The utility model discloses a kind of high density LED light source structure, the light-source structure includes solid state fluorescence converting material matrix and at least one circuit substrate, at least one end face of the solid state fluorescence converting material matrix is exiting surface, the reflectance coating Wavelength matched with light extraction is coated with the solid state fluorescence converting material matrix, and it is not coated with reflectance coating on the exiting surface, the circuit substrate is at least one side of the solid state fluorescence converting material matrix, the circuit substrate is provided with LED chip array, the LED chip array matches with the profile of the incidence surface of solid state fluorescence converting material matrix, and coupled connection.High density LED light source structure in the utility model carries out light conversion using unique space multistory scope, and in a facet output, unit area amount of light is up to 2051 lumens/mm2, the optical density limitation of single chip LED is breached, go out optical density and improve an order of magnitude.
Description
Technical field
The utility model is related to a kind of light-source structure, and in particular to a kind of high density LED light source structure.
Background technology
Current LED illumination industry development is rapid, and there is great power LED small volume, safety low-voltage, long lifespan, electric light to turn
The advantages of efficiency high, fast response time, energy-conserving and environment-protective is changed, is applied successively.Due to being limited by optical design, except device
The total light flux of part, many application fields are being improved constantly to device unit area luminous flux (optical density).
Improving the unit area luminous flux of LED mainly has two approach, increases the total number of light photons of chip internal electric light conversion
With the light extraction efficiency that raising has produced photon：The total number of light photons that one, increases the conversion of chip internal electric light on the one hand can be by improving
The quality of chip epitaxial layer, improves electric light transformation efficiency and realizes；Power i.e. electric current when on the other hand can be used by increasing is close
Degree is realized.Limited by carrier density in semiconductor, the unit area electrical power of LED can not possibly infinitely increase, therefore LED is mono-
The amount of light of plane product there is also greatest limit.Patent " integration packaging of super high power vertical chip " (publication number
CN105261693A the current density range announced in) is 0.35~3.5A/mm2, but its upper limit has been extremely difficult to, current property high
Can chip actual steady operation when the maximum current density about 1.5A/mm that can reach2.And with the increase of device power,
The light extraction efficiency of unit area and unit power can be decreased obviously；Two, are improved and have been produced the light extraction efficiency of photon to refer mainly to change
Become the surface texture of LED exiting surfaces to increase efficiency of light extraction, luminous chip internal must be exported as far as possible, such as installing has respectively
Plant the lens of surface texture, plating anti-reflection film etc..Light efficiency can also be properly increased by the ray structure for improving chip epitaxial layer, such as
The 3D nanometers of chip of White light LED technology of Ou Silang companies in May, 2016 newest release, the surface of photosphere is gone out by increasing blue light
The light extraction efficiency of unit area, can be improved 20% or so by product.In a word, by improving chip, quality with increasing in itself merely
There is physics limit in the mode of optical density, will be unable to meet long-range demand.
Due to the limitation that there is etendue, an efficient high intensity light source cannot expand LED by simple certainly
The mode of lighting area and then optically focused is realized, therefore exiting surface is smaller, and optical density is higher, more favourable to follow-up optical design.
As giant-screen high-brightness projection display field has strict demand (usually more than 2.6*3.2mm to the size for going out light source smooth surface2),
It is oversized to realize effectively imaging；The narrow angle of flare illuminating device of high brightness of some military fields must be total hair of light source
Light area is limited in very little scope (such as 5*5mm2, optical density requirement 160 lumens/mm2)；Minimally Invasive Surgery illumination is logical to light source area
Often it is limited in 10~12mm2, optical density requirement 250 lumens/mm2.Obvious common LED optical texture would become hard to competent highly dense from now on
The development trend of illumination field is spent, and there is complex structure if other high intensity light sources such as laser, high cost, efficiency is low, by method
The various unfavorable factors such as restrictions, therefore a kind of rational high intensity light source solution of searching will have very huge valency
Value.
Utility model content
In order to solve the above technical problems, the purpose of this utility model be provide a kind of high density LED light source structure and its
Preparation method, so as to export high density light in the end face of phosphor charge bar, it is big than existing market most significant end that it goes out optical density
Power LED improves an order of magnitude.
To reach above-mentioned purpose, the technical solution of the utility model is as follows：
On the one hand, the utility model provides a kind of high density LED light source structure, including solid state fluorescence converting material matrix and
At least one circuit substrate, at least end face of the solid state fluorescence converting material matrix is exiting surface, and the solid state fluorescence turns
Change to be coated with material matrix and reflectance coating is not coated with the reflectance coating Wavelength matched with light extraction, and the light output end, the circuit
On at least one side of the solid state fluorescence converting material matrix, the circuit substrate is provided with LED chip array to substrate,
The LED chip array matches with the profile of the incidence surface of solid state fluorescence converting material matrix, and coupled connection.
High density LED light source structure of the present utility model, by the solid state fluorescence converting material base that reflectance coating is plated in multiaspect
The side of body sets LED chip array, solid state fluorescence converting material matrix be injected laterally certain wavelength light (generally by
LED chip is produced), due to there are a large amount of centres of luminescence in fluorescent material, these centres of luminescence are by being excited and emission process meeting
By the efficient light that must change into another wavelength of the light of the wavelength, the new light for producing is inside phosphor charge bar by a series of reflections
Process, finally exports high density light on the top of phosphor charge bar；Using unique space multistory scope carry out light conversion and
One mode of facet output, the unit area amount of light of green-yellow light is up to 2051 lumens/mm2, the light for breaching single chip LED is close
Degree limitation.It goes out optical density and improves an order of magnitude than the great power LED of existing market most significant end.
As preferred scheme, it is additionally provided with the exiting surface and goes out the anti-reflection film that optical wavelength matches.
Using above-mentioned preferred scheme, while optical density is improved, light extraction efficiency is improved.
Used as preferred scheme, also including cooling system, the cooling system includes the first heat-radiating substrate and the second radiating
Substrate, first heat-radiating substrate is located at one side relative with LED chip array on the circuit substrate, the second radiating base
Plate is located at outside the reflectance coating, and the cooling system is adapted with the profile of the solid state fluorescence converting material matrix.
Using above-mentioned preferred scheme, while optical density is improved, radiating effect is improved.
Used as preferred scheme, the chip in the LED chip array is flip-chip, positive cartridge chip or vertical chip
In.
As preferred scheme, chip in the LED chip array according to excitation wavelength need can for UV chip,
Blue chip or green glow chip.
Used as preferred scheme, the longitudinal section of the solid state fluorescence converting material matrix is rectangle or trapezoidal, the solid-state
The cross section of fluorescence conversion material matrix is circular or square.
Using above-mentioned preferred scheme, trapezoidal section conveniently takes light.
Used as preferred scheme, the reflectance coating includes deielectric-coating, and the deielectric-coating is externally provided with metal film, the deielectric-coating
It is 20~90 layers of multilayer film, is the half of correspondence reflection wavelength per thickness degree, the thickness of the metal film is 0.2~2 micron.
Using above-mentioned preferred scheme, 60~250 nanometers of deielectric-coating reflection bandwidth, reflectivity when angle of reflection is less than 85 °
99.5%, reflectivity 45% when angle of reflection is more than 85 °；The reflectivity of aluminium film full angle is 92%, can increase overall reflective effect
Really.
Used as preferred scheme, the solid state fluorescence converting material matrix is by selected from yellowish green fluorescence material, blue phosphor
At least one composition in material and red light flourescent material.
Using above-mentioned preferred scheme, except traditional white light, the high intensity light source of different wave length can also be produced, can be with
Three kinds of high intensity light sources of color of RGB (RGB) are realized, wavelength may be selected, it is modern for giant-screen high-brightness projection etc. to show
Technology has greatly help.
Used as preferred scheme, the yellowish green fluorescence material is selected from the YAG, LuAG, LuYAG, YAGG of Ce ion dopings
At least one in crystal, crystalline ceramics and glass, the blue phosphor material be selected from BGO, PWO or Ce ion doping YSO,
At least one in LSO, GSO, the red light flourescent material is selected from aluminate, the silicic acid of Cr, Ce, Eu, Bi, Si plasma doping
At least one in salt or crystal of fluoride, ceramics, glass material, or the clear glass of doped nitride red light fluorescent powder.
On the other hand, the utility model also provides a kind of preparation method of above-specified high density LED light source structure, including as follows
Step：
1) solid state fluorescence converting material is processed, solid state fluorescence converting material matrix is obtained；
2) corresponding anti-reflection film is plated at least one side of solid state fluorescence converting material matrix again, then described
Remaining other sides plating reflectance coating of solid state fluorescence converting material matrix, obtains the solid state fluorescence converting material base after plated film
Body；
3) circuit substrate with LED chip array is made, then by side of the circuit substrate with LED array and the plated film
The incidence surface coupling of solid state fluorescence converting material matrix afterwards；The opposite side of the circuit substrate and the first heat-radiating substrate are connected again
Connect；
4) will be pasted on the reflecting surface of the non-termination power substrate of the solid state fluorescence converting material matrix after the plated film again
Second heat-radiating substrate, obtains final product.
As preferred scheme, in step 2) in, first in remaining other sides of the solid state fluorescence converting material matrix
The deielectric-coating of multilayer is plated in face, then the metal-coated membrane on deielectric-coating, and the deielectric-coating is in 200~400 DEG C of plated films, the metal film
In 150~200 DEG C of plated films.
Brief description of the drawings
Fig. 1 is the structural representation of high density LED light source structure of the present utility model；
Wherein：
1. solid state fluorescence converting material matrix, 2. exiting surface, 3. reflectance coating, 4.LED chip arrays, 5. the first radiating base
Plate, 6. circuit substrate.
Specific embodiment
Describe preferred embodiment of the present utility model in detail below in conjunction with the accompanying drawings.
In order to reach the purpose of this utility model, as shown in figure 1, high density LED light source structure of the present utility model, including
Solid state fluorescence converting material matrix 1 and at least one circuit substrate 6, at least end face of solid state fluorescence converting material matrix 1 is
Exiting surface 2, is coated with solid state fluorescence converting material matrix 1 and reflective coating 3, circuit is not coated with reflecting layer 3, and light output end 2
On at least one side of solid state fluorescence converting material matrix 1, circuit substrate 6 is provided with the array of LED chip 4, LED to substrate 6
Chip array 4 matches with the profile of the incidence surface of solid state fluorescence converting material matrix 1, and coupled connection.
The high density LED light source structure of the utility model embodiment, is converted by the solid state fluorescence that reflectance coating is plated in multiaspect
The side of material matrix sets LED chip array, (logical in the light for being injected laterally certain wavelength of solid state fluorescence converting material matrix
Often produced by LED chip), due to there are a large amount of centres of luminescence in fluorescent material, these centres of luminescence are by being excited and launching
Journey can be by the efficient light that must change into another wavelength of the light of the wavelength, and the new light for producing is inside phosphor charge bar by a series of
Reflection process, finally exports high density light on the top of phosphor charge bar；Light conversion is carried out using unique space multistory scope
And in a mode for facet output, unit area amount of light is up to 2051 lumens/mm2, breach the optical density limit of single chip LED
System.It goes out optical density and improves an order of magnitude than the great power LED of existing market most significant end.
In order to further optimize implementation result of the present utility model, anti-reflection film is additionally provided with exiting surface 2.Improving, light is close
While spending, light extraction efficiency is improved.
In order to further optimize implementation result of the present utility model, also including cooling system, cooling system includes first
The heat-radiating substrate of heat-radiating substrate 5 and second, the first heat-radiating substrate 5 is located at one side relative with LED chip array 4 on circuit substrate 6,
Second heat-radiating substrate is located at outside reflectance coating 3, and cooling system is adapted with the profile of solid state fluorescence converting material matrix 1.Improving
While optical density, radiating effect is improved.
In order to further optimize implementation result of the present utility model, the chip in LED chip array 4 is selected from upside-down mounting core
At least one in piece, positive cartridge chip and vertical chip.
In order to further optimize implementation result of the present utility model, the chip in LED chip array 4 is according to excitation wavelength
Needs can be UV chip, blue chip or green glow chip.
In order to further optimize implementation result of the present utility model, the longitudinal section of solid state fluorescence converting material matrix 1 is
Rectangle is trapezoidal, and the cross section of solid state fluorescence converting material matrix is circular or square.Trapezoidal section conveniently takes light.
In order to further optimize implementation result of the present utility model, reflection facial mask 3 includes deielectric-coating, and deielectric-coating is externally provided with
Metal film, deielectric-coating is 20~90 layers of multilayer film, and the thickness of metal film is 0.2~2 micron.So that reflection bandwidth 60~
250 nanometers, reflectivity 99.5% when angle of reflection is less than 85 °, reflectivity 45% when angle of reflection is more than 85 °；Made instead by metal film
The rate of penetrating is improved to 92%.During specific implementation, deielectric-coating can be combined by titanium oxide layer, silicon oxide layer and zirconia layer, metal
Film is aluminium film.
In order to further optimize implementation result of the present utility model, solid state fluorescence converting material matrix 1 is by selected from yellowish green
At least one composition in fluorescence material, blue phosphor material and red light flourescent material.Except traditional white light, can also produce
The high intensity light source of different wave length, it is possible to achieve three kinds of high intensity light sources of color of RGB (RGB), wavelength may be selected, right
There is greatly help in modern display technologies such as giant-screen high-brightness projections.
In order to further optimize implementation result of the present utility model, yellowish green fluorescence material is selected from Ce ion dopings
At least one in YAG, LuAG, LuYAG, YAGG crystal, crystalline ceramics and glass, blue phosphor material is selected from BGO, PWO or Ce
At least one in YSO, LSO, GSO of ion doping, red light flourescent material is selected from Cr, Ce, Eu, Bi, Si plasma doping
In aluminate or silicate crystal, ceramics, glass material, or the clear glass of doped nitride red light fluorescent powder at least one
Kind.
Below in the way of specific embodiment, to be further described to the utility model.
Unless specifically stated otherwise, reagent and medicine used in following examples, can from regular distributor available from.
Embodiment 1
1) cutting and grinding polishing length, width and height are respectively 40*1.5*2.6mm3The Ce of specification：YAG transparent crystals glo-stick (Gu
State fluorescence conversion material matrix).Injection blue light, outgoing green-yellow light.
2) in Ce：The green-yellow light of 4 sides of YAG transparent crystal glo-sticks, 1 end face plating titanium oxide and silicon oxide substrate
Reflectance coating, and add plating blue light anti-reflection film in the side of injection blue light, the wherein number of plies of the deielectric-coating in reflecting surface is 40 layers, reflection
With a width of 120 nanometers, i.e., between 520-640 nanometers, metal film is aluminium film, 0.2 micron of thickness.
3) blue LED flip chip array is made, using the blue chip that 24 power is 3 watts, chip light emitting wave band is
455 rans, are fixed on heat dispersion substrate by way of Sn/Au eutectic is welded.By the way of one side enters light, by LED chip
Luminous side and Ce：The side of YAG transparent crystals glo-stick plating blue light anti-reflection film is brought into close contact.Chip light emitting is set effectively to enter
Enter crystals.
4) make and the supporting heat abstractor of transparent fluorescent rod profile, and be brought into close contact with the two sides of transparent fluorescent rod,
Glo-stick is set effectively to be radiated.
Using distant place PMS-80 integrating sphere measurement systems, the light of high density LED light source structure obtained in the above method is determined
Flux is 8000 lumens, and the unit area amount of light of green-yellow light is up to 2051 lumens/mm2。
Embodiment 2
1) cutting and grinding polishing length, width and height are respectively 40*2.6*3.2mm3The Ce of specification：LuAG transparent crystals glo-stick (Gu
State fluorescence conversion material matrix).Injection blue light, outgoing green glow.
2) in Ce：LuAG transparent crystals glo-stick injection blue light two sides plating titanium oxide and silicon oxide substrate it is yellowish green
Optical reflection film and blue light anti-reflection film, blue light anti-reflection film is plated in exiting surface, remaining 3 face plating metallic reflective coating, wherein in reflecting surface
Deielectric-coating the number of plies be 90 layers, reflection bandwidth be 250 nanometers, metal film is aluminium film, 0.8 micron of thickness.
3) blue LED flip chip array is made, using the blue chip that 24 power is 3 watts, chip light emitting wave band is
445 rans, are fixed on heat dispersion substrate by way of Sn/Au eutectic is welded.Using it is two-sided enter light by the way of, by LED chip
Luminous side and Ce：The side of LuAG transparent crystal glo-sticks is brought into close contact.Chip light emitting is set to be efficiently entering crystals.
4) make and the supporting heat abstractor of transparent fluorescent rod profile, and be brought into close contact with the two sides of transparent fluorescent rod,
Glo-stick is set effectively to be radiated.
Using distant place PMS-80 integrating sphere measurement systems, the light of high density LED light source structure obtained in the above method is determined
Flux is 17990 lumens, and the unit area amount of light of green-yellow light is up to 2162 lumens/mm2。
Embodiment 3
1) cutting and grinding polishing length, width and height are respectively 40*2.6*3.2mm3The Cr of specification：YAG transparent crystal feux rouges glo-sticks
(solid state fluorescence converting material matrix).Injection green-yellow light, outgoing feux rouges.
2) in Cr：4 sides of YAG transparent crystal feux rouges glo-sticks, 1 end face plating titanium oxide, zirconium oxide and silica
Reflection to red light film, two of which width is that 2.6 millimeters of symmetrical sides add plating green-yellow light anti-reflection film, wherein Jie in reflecting surface
The number of plies of plasma membrane is 40 layers, and reflection bandwidth is 120 nanometers, i.e., between 580-700 nanometers, metal film is aluminium film, thickness 1.5
Micron.
3) green LED chip array is made, using the green glow chip that 20 power is 1.5 watts, chip light emitting wave band is 560
Ran, is fixed on heat dispersion substrate by way of plating elargol.Using it is two-sided enter light by the way of, by two panels LED chip hair
The face of light and Cr：The two sides of YAG transparent crystal glo-sticks are brought into close contact.Chip light emitting is set to be efficiently entering crystals.
4) make and the supporting heat abstractor of transparent fluorescent rod profile, and be brought into close contact with the two sides of transparent fluorescent rod,
Glo-stick is set effectively to be radiated.
Using distant place PMS-80 integrating sphere measurement systems, the red of high density LED light source structure obtained in the above method is determined
Light luminous flux is 720 lumens, and the unit area amount of light of feux rouges is 87 lumens/mm2。
Embodiment 4
1) cutting and grinding polishing length, width and height are respectively 25*1.5*2.6mm3The small-power Ce of specification：YAG crystalline ceramics fluorescence
Rod (solid state fluorescence converting material matrix).Injection blue light, outgoing green-yellow light.
2) in Ce：YAG crystalline ceramics glo-sticks enter the green-yellow light reflection of the side plating titanium oxide and silicon oxide substrate of blue light
Film and blue light anti-reflection film, blue light anti-reflection film is plated in exiting surface, remaining 4 face plating metallic reflective coatings, the wherein medium in reflecting surface
Film is 60 layers, and reflection bandwidth is 180 nanometers, and metal film is aluminium film, 1 micron of thickness.
3) blue LED flip chip array is made, using the blue chip that 15 power is 3 watts, chip light emitting wave band is
450 rans, are fixed on heat dispersion substrate by way of Sn/Au eutectic is welded.By the way of one side enters light, by LED chip
Luminous side and Ce：The side of YAG crystalline ceramics glo-sticks is brought into close contact.Chip light emitting is set to be efficiently entering crystals.
4) make and the supporting heat abstractor of transparent fluorescent rod profile, and be brought into close contact with the two sides of transparent fluorescent rod,
Glo-stick is set effectively to be radiated.
Using distant place PMS-80 integrating sphere measurement systems, the light of high density LED light source structure obtained in the above method is determined
Flux is 4998 lumens, and the unit area amount of light of green-yellow light is 600 lumens/mm2。
Embodiment 5
1) cutting and grinding polishing length, width and height are respectively 20*1.5*2.6mm3The Ce of specification：GSO blue phosphor crystal bars.
2) in Ce：The blu-ray reflection of 3 sides of GSO blue phosphor crystal bars, 1 end face plating titanium oxide and silica
Film, two of which width is that 2.6 millimeters of symmetrical sides add plating purple light anti-reflection film, and the wherein multilayer dielectric film in reflecting surface is 20
Layer, reflection bandwidth is 60 nanometers, and metal film is aluminium film, 2 microns of thickness.
3) purple LED chip array is made, using the purple light chip that 15 power is 1.5 watts, chip light emitting wave band is 360
Ran, is fixed on heat dispersion substrate by way of plating elargol.Using it is two-sided enter light by the way of, by two panels LED chip hair
The face of light and Ce：The two sides of GSO fluorescent crystal rods are brought into close contact.Chip light emitting is set to be efficiently entering inside glass.
4) make and Ce：The supporting heat abstractor of GSO fluorescent crystal rod profiles, and closely pasted with the two sides of glo-stick
Close, glo-stick is effectively radiated.
Using distant place PMS-80 integrating sphere measurement systems, the indigo plant of high density LED light source structure obtained in the above method is determined
Light luminous power luminous flux is 300 lumens, and the unit area amount of light of blue light is 77 lumens/mm2。
Specific experiment embodiment
Current international top commercial high power LED (white light) is gone out into optical density, distant place PMS-80 integrating sphere measurements are used
System measurement compares, as a result as described in Table 1：
Table 1
Be can be seen that from above-mentioned table 1, high density LED light source structure of the present utility model, optical density is far longer than prior art
In LED optical density, in typical 1.5*2.6mm2Sectional area can with light extraction be more than 8000 lumens, unit area amount of light
Up to 2051 lumens/mm2, breach the optical density limitation of single chip LED.
Above-described is only preferred embodiment of the present utility model, it is noted that for the ordinary skill of this area
For personnel, on the premise of the utility model creation design is not departed from, various modifications and improvements can be made, these all belong to
In protection domain of the present utility model.
Claims (8)
1. a kind of high density LED light source structure, it is characterised in that including solid state fluorescence converting material matrix and at least one circuit
Substrate, at least end face of the solid state fluorescence converting material matrix is exiting surface, on the solid state fluorescence converting material matrix
It is coated with and reflectance coating is not coated with the reflectance coating Wavelength matched with light extraction, and the exiting surface, the circuit substrate is located at described solid
On at least one side of state fluorescence conversion material matrix, the circuit substrate is provided with LED chip array, the LED chip battle array
Row match with the profile of the incidence surface of solid state fluorescence converting material matrix, and coupled connection.
2. high density LED light source structure according to claim 1, it is characterised in that be additionally provided with the exiting surface and gone out
The anti-reflection film that optical wavelength matches.
3. high density LED light source structure according to claim 2, it is characterised in that also including cooling system, the radiating
System include the first heat-radiating substrate and the second heat-radiating substrate, first heat-radiating substrate be located on the circuit substrate with it is described
The relative one side of LED chip array, second heat-radiating substrate is located at outside the reflectance coating, the cooling system and the solid-state
The profile of fluorescence conversion material matrix is adapted.
4. high density LED light source structure according to any one of claim 1 to 3, it is characterised in that the LED chip
Chip in array is flip-chip, positive cartridge chip or vertical chip, or：
Chip in the LED chip array is UV chip, blue chip or green glow chip.
5. high density LED light source structure according to any one of claim 1 to 3, it is characterised in that the solid state fluorescence
The longitudinal section of converting material matrix is rectangle or trapezoidal, and the cross section of the solid state fluorescence converting material matrix is circular or side
Shape.
6. high density LED light source structure according to any one of claim 1 to 3, it is characterised in that the reflectance coating bag
Deielectric-coating is included, the deielectric-coating is externally provided with metal film, and the deielectric-coating is 20~90 layers of multilayer film, the thickness of the metal film
It is 0.2~2 micron.
7. high density LED light source structure according to any one of claim 1 to 3, it is characterised in that the solid state fluorescence
Converting material matrix is by selected from yellowish green fluorescence material, blue phosphor material or red light flourescent material.
8. high density LED light source structure according to claim 7, it is characterised in that the yellowish green fluorescence material is Ce
The YAG of ion doping, LuAG, LuYAG, YAGG crystal, crystalline ceramics or glass, the blue phosphor material are BGO, PWO or Ce
YSO, LSO or GSO of ion doping, the red light flourescent material are aluminate, the silicic acid of Cr, Ce, Eu, Bi, Si ion doping
Salt or crystal of fluoride, ceramics, glass material, or doped nitride red light fluorescent powder clear glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620817608.8U CN206259381U (en) | 2016-07-29 | 2016-07-29 | High density led light source structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620817608.8U CN206259381U (en) | 2016-07-29 | 2016-07-29 | High density led light source structure |
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| Publication Number | Publication Date |
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| CN206259381U true CN206259381U (en) | 2017-06-16 |
Family
ID=59023348
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098900A (en) * | 2016-07-29 | 2016-11-09 | 昆山锐峰晶体材料有限公司 | High density led light source structure and preparation method thereof |
| CN111133595A (en) * | 2017-09-26 | 2020-05-08 | 京瓷株式会社 | Wiring substrate and light emitting device |
| CN111427227A (en) * | 2019-01-10 | 2020-07-17 | 精工爱普生株式会社 | Light source device, projector, and phosphor rod |
-
2016
- 2016-07-29 CN CN201620817608.8U patent/CN206259381U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098900A (en) * | 2016-07-29 | 2016-11-09 | 昆山锐峰晶体材料有限公司 | High density led light source structure and preparation method thereof |
| CN111133595A (en) * | 2017-09-26 | 2020-05-08 | 京瓷株式会社 | Wiring substrate and light emitting device |
| CN111133595B (en) * | 2017-09-26 | 2023-12-05 | 京瓷株式会社 | Wiring board and light emitting device |
| CN111427227A (en) * | 2019-01-10 | 2020-07-17 | 精工爱普生株式会社 | Light source device, projector, and phosphor rod |
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