CN202394928U - Multi-base island embedded multi-circle pin passive device packaging structure - Google Patents
Multi-base island embedded multi-circle pin passive device packaging structure Download PDFInfo
- Publication number
- CN202394928U CN202394928U CN2011204799405U CN201120479940U CN202394928U CN 202394928 U CN202394928 U CN 202394928U CN 2011204799405 U CN2011204799405 U CN 2011204799405U CN 201120479940 U CN201120479940 U CN 201120479940U CN 202394928 U CN202394928 U CN 202394928U
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- Prior art keywords
- pin
- interior
- passive device
- chip
- base island
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- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model relates to a multi-base island embedded multi-circle pin passive device packaging structure, comprising outer pins (1), wherein a plurality of circles of outer pins (1) are arranged; an inner pin (3) is formed on the front face of each outer pin (1) in a multi-layer electroplating manner; an inner base island (2) is formed between the inner pins (3) in the multi-layer electroplating manner; a chip (4) is arranged on the front face of the inner base island (2); the front face of the chip (4) is connected to the front face of the inner pin (3) by a metal wire (5); a passive device (10) is spanned between the inner pins (3); and a second metal layer (9) is formed on the rear face of the outer pin (1). The multi-base island embedded multi-circle pin passive device packaging structure has the following advantages that: a high-temperature resistant coating on the rear face is omitted so that the packaging cost is reduced; the optional types of the product are wide; the quality of the bonding of the metal wire and the stability of the reliability of the product are good; the binding power of the plastic package body and the metal pin is high; and the high-density capability of the inner pins is realized.
Description
Technical field
The utility model relates to a kind of how base island embedded many circle pin passive device encapsulating structures, belongs to the semiconductor packaging field.
Background technology
Traditional lead frame structure mainly contains two kinds:
First kind: after adopting metal substrate to carry out chemical etching and plating, stick the resistant to elevated temperatures glued membrane of one deck at the back side of metal substrate and form the leadframe carrier (as shown in Figure 3) that to carry out encapsulation process;
Second kind: employing is at first carried out chemistry at the back side of metal substrate and is etched partially; Again sealing of plastic packaging material carried out in the aforementioned zone that has etched partially through chemistry; The chemical etching of pin in afterwards the front of metal substrate being carried out; Carry out the plating on pin surface in the lead frame after the completion again, promptly accomplish the making (as shown in Figure 5) of lead frame.
And there has been following not enough point in above-mentioned two kinds of lead frames in encapsulation process:
First kind:
1, but the lead frame of this kind must stick the glued membrane of one deck costliness high temperature resistance because of the back side, so directly increased high cost;
2, but also because such a lead frame must be affixed on the back layer of high temperature of the film, during the packaging process so that the loading process can use conductive or non-conductive adhesive material, and can not be used completely eutectic solder process technology and for loading, so choose the types of products have greater limitations;
3, again because but the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind; And in the metal wire bonding technology in encapsulation process; Because but the glued membrane of this high temperature resistance is a soft materials; So caused the instability of metal wire bonding parameter, seriously influenced the quality of metal wire bonding and the stability of production reliability;
4, again because but the glued membrane of one deck high temperature resistance must be sticked in the back side of the lead frame of this kind; And the plastic package process process in encapsulation process; Infiltrate plastic packaging material because the injecting glue pressure during plastic packaging is easy to cause between lead frame and the glued membrane, and be that the kenel of conduction is because infiltrated plastic packaging material and become insulation pin (as shown in Figure 4) on the contrary the former metal leg that should belong to.
Second kind:
1, because carried out the etching operation of secondary respectively, so increased the cost of operation operation more;
2, the composition of lead frame be metallics add epoxy resin material (plastic packaging material) thus at high temperature easily because the expansion of different material and shrinkage stress inequality, generation lead frame warpage issues;
3, also because the warpage of lead frame directly has influence on the precision of the device chip in the packaging process and thereby yield is produced in the smooth and easy influence of lead frame transport process;
4, also because the warpage of lead frame directly has influence on the aligning accuracy of the metal wire bonding in the packaging process and thereby yield is produced in the smooth and easy influence of lead frame transport process;
5, because the positive interior pin of lead frame is to adopt etched technology, must be so the pin of pin is wide in the etching greater than 100 μ m, and the gap of interior pin and interior pin also must be greater than 100 μ m, so difficult high density ability of accomplishing interior pin.
Summary of the invention
The purpose of the utility model is to overcome above-mentioned deficiency; A kind of how base island embedded many circle pin passive device encapsulating structures are provided, and it has saved the high temperature resistant glued membrane at the back side, has reduced packaging cost; Selectable product category is wide; The quality of metal wire bonding and the good stability of production reliability, the constraint ability of plastic-sealed body and metal leg is big, has realized the high density ability of interior pin.
The purpose of the utility model is achieved in that a kind of how base island embedded many circle pin passive device encapsulating structures; Be characterized in: it comprises outer pin; Said outer pin is provided with many circles, and said outer pin front forms interior pin through the multilayer plating mode, forms interior Ji Dao through the multilayer plating mode between said interior pin and the interior pin; Ji Dao has a plurality of in said; Front, basic island is provided with chip in said, is connected with metal wire between said chip front side and the interior pin front and between chip front side and the chip front side, said between pin and the interior pin cross-over connection passive device is arranged; Ji Dao and interior pin top and chip, metal wire and passive device are encapsulated with plastic packaging material outward in said; Zone that said outer pin is peripheral and the zone between outer pin and the outer pin are equipped with gap filler, and the back side of outer pin exposes outside the gap filler, and the back side of the outer pin outside exposing gap filler is provided with second metal level.
Said the first metal layer can adopt nickel, copper, nickel, palladium, five layers of metal level of gold or nickel, copper, silver-colored three-layer metal layer, perhaps other similar structures.With nickel, copper, nickel, palladium, five layers of metal level of gold is example; Wherein the ground floor nickel dam mainly plays the effect on anti-etching barrier layer; And middle copper layer, nickel dam and palladium layer mainly play a part to combine to increase, and outermost gold layer mainly plays the effect with the metal wire bonding.
The composition of said second metal level can adopt golden nickel gold, golden ambrose alloy nickel gold, NiPdAu, golden NiPdAu, nickel gold, silver or tin etc. according to the function of different chips.
Compared with prior art, the beneficial effect of the utility model is:
1, but the glued membrane of the expensive high temperature resistance of one deck need not sticked in the back side of this kind lead frame, so directly reduced high cost;
2, because the back surface of the lead frame does not require such a layer of paste-resistant temperature of the film, so that during the process of the package in addition to the conductive or non-conductive adhesive material, but also with eutectic process as well as soft solder process for loading, so a wider choice of species;
3,, guaranteed the stability of metal wire bonding parameter, guaranteed the stability of reliability of quality and the product of metal wire bonding again because but the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind;
, thereby in the technical process of encapsulation, can not cause between lead frame and the glued membrane fully and infiltrate plastic packaging material 4, again because but the glued membrane of one deck high temperature resistance need not sticked in the back side of the lead frame of this kind;
5, because the fine rule electric plating method has been adopted in the front, so positive pin widths minimum can reach 25 μ m, and reach 25 μ m apart from minimum between interior pin and the interior pin, embody the high density ability of the interior pin of lead frame fully;
6, owing to used the plating mode and the back etched technology of positive interior pin; So can the pin in lead frame front be extended to as much as possible the next door of Ji Dao; Impel chip and pin distance significantly to shorten, so the cost of metal wire also can significantly reduce (the especially metal wire of expensive proof gold matter);
7, also because the shortening of metal wire makes the also speedup (especially the product of storage class and need the calculating of mass data more outstanding) significantly of signal output speed of chip; Because the length of metal wire has shortened, so also significantly reduce in the interference of the existing dead resistance of metal wire, parasitic capacitance and stray inductance to signal;
8, because of having used the plating elongation technology of interior pin,, make the volume and the area of encapsulation significantly to dwindle so can be easy to produce the distance between high pin number and highdensity pin and the pin;
9, because volume after being encapsulated is significantly dwindled, more directly embody material cost and significantly descend, because the minimizing of material usage has also reduced environmental issue puzzlements such as discarded object significantly.
Description of drawings
Fig. 1 is a kind of how base island embedded many circle pin passive device encapsulating structure sketch mapes of the utility model.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 was not for there was the sketch map that high temperature resistant glued membrane is sticked at the pin lead frame back side on four sides in the past.
The sketch map of flash when the four sides that Fig. 4 sticks high temperature resistant glued membrane for the back side does not in the past have the pin leadframe package.
Fig. 5 was for sealed the structural representation of two-sided etched lead frame in the past in advance.
Wherein:
Outer pin 1
In basic island 2
Plastic packaging material 6
Gap filler 7
Conduction or non-conductive bonding material 8
Second metal level 9
Embodiment
Referring to Fig. 1, Fig. 2; A kind of how base island embedded many circle pin passive device encapsulating structures of the utility model; It comprises outer pin 1, and said outer pin 1 is provided with many circles, pin 3 in said outer pin 1 front forms through the multilayer plating mode; Basic island 2 in forming through the multilayer plating mode between pin 3 and the interior pin 3 in said; Basic island 2 has a plurality ofly in said, and basic island 2 is referred to as the first metal layer with interior pin 3 in said, said in 2 fronts, basic island be provided with chip 4 through conduction or non-conductive bonding material 8; Said chip 4 positive with interior pin 3 fronts between and be connected with metal wire 5 between chip 4 fronts and chip 4 fronts; Through conduction or 8 cross-over connections of non-conductive bonding material passive device 10 is arranged between pin 3 and the interior pin 3 in said, said in basic island 2 and interior pin 3 tops and chip 4 and the metal wire 5 outer plastic packaging materials 6 that are encapsulated with, the zone between regional and the outer pin 1 and the outer pin 1 of said outer pin 1 periphery is equipped with gap filler 7; And expose outside the gap filler 7 at the back side of outer pin 1, and the back side of the outer pin 1 outside exposing gap filler 7 is provided with second metal level 9.
Basic island 2 in also can not forming between pin 3 and the interior pin 3 in said through the multilayer plating mode; If basic island 2 in not forming between interior pin 3 and the interior pin 3, gap filler 7 fronts in chip 4 directly is arranged at through conduction or non-conductive bonding material 8 at this moment between pin 3 and the interior pin 3.
Claims (1)
1. base island embedded many circle pin passive device encapsulating structures more than a kind; It is characterized in that: it comprises outer pin (1); Said outer pin (1) is provided with many circles; Said outer pin (1) is positive to form interior pin (3) through the multilayer plating mode; Form interior Ji Dao (2) through the multilayer plating mode between pin (3) and the interior pin (3) in said, said interior Ji Dao (2) has a plurality of, and said interior Ji Dao (2) front is provided with chip (4); Said chip (4) positive with interior pin (3) front between and be connected with metal wire (5) between chip (4) front and chip (4) front; Cross-over connection has passive device (10) between said interior pin (3) and the interior pin (3), the outer plastic packaging material (6) that is encapsulated with of said interior Ji Dao (2) and interior pin (3) top and chip (4), metal wire (5) and passive device (10), and zone that said outer pin (1) is peripheral and the zone between outer pin (1) and the outer pin (1) are equipped with gap filler (7); And expose outside the gap filler (7) at the back side of outer pin (1), and the back side of the outer pin (1) outside exposing gap filler (7) is provided with second metal level (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204799405U CN202394928U (en) | 2011-11-28 | 2011-11-28 | Multi-base island embedded multi-circle pin passive device packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204799405U CN202394928U (en) | 2011-11-28 | 2011-11-28 | Multi-base island embedded multi-circle pin passive device packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202394928U true CN202394928U (en) | 2012-08-22 |
Family
ID=46669833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204799405U Expired - Lifetime CN202394928U (en) | 2011-11-28 | 2011-11-28 | Multi-base island embedded multi-circle pin passive device packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202394928U (en) |
-
2011
- 2011-11-28 CN CN2011204799405U patent/CN202394928U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120822 |
|
| CX01 | Expiry of patent term |