CN202359229U - Master-alloy doping and complementary-doping device - Google Patents
Master-alloy doping and complementary-doping device Download PDFInfo
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- CN202359229U CN202359229U CN201120498757XU CN201120498757U CN202359229U CN 202359229 U CN202359229 U CN 202359229U CN 201120498757X U CN201120498757X U CN 201120498757XU CN 201120498757 U CN201120498757 U CN 201120498757U CN 202359229 U CN202359229 U CN 202359229U
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Abstract
The utility model discloses a master-alloy doping and complementary-doping device which comprises an outer doping tube, an inner tube, an adjusting assembly, a seal valve, a vacuumizing assembly and a master alloy tank, wherein one end of the outer doping tube is an outer transit orifice, and the other end of the outer doping tube is a long-tube-shaped closed end; one end of the inner tube is probed in the outer doping tube, and an opening of the end of the inner tube is provided with a first magnet; the other end of the inner tube is exposed out of the outer doping tube, and an opening of the end is provided with the master alloy tank; the adjusting assembly is sleeved on the outer doping tube; a second magnet is arranged in the adjusting assembly; the outer transit orifice of the outer doping tube is hermetically connected with a transit orifice of an observation hole of a single crystal furnace; the seal valve is arranged at the observation hole of the single crystal furnace, and when the seal valve is closed, a hermetic seal effect is achieved between the observation hole of the single crystal furnace and the seal valve, so that the observation hole of the single crystal furnace is sealed, thereby preventing air from entering the single crystal furnace; and the vacuumizing assembly is hermetically connected with the observation hole of the single crystal furnace. According to the utility model, the purposes of improving the production efficiency, reducing the energy consumption, lowering the cost and improving the rate of finished single crystal products are achieved.
Description
Technical field
The utility model relates to a kind of mother alloy and mixes and the doping up device, belongs to solar energy silicon single crystal doping techniques technical field.
Background technology
Existing crystal pulling adulterating method commonly used is: mother alloy is put into crucible with polysilicon in the charging process.
Existing crystal pulling doping up method commonly used is: do a spill " umbellule " with seed crystal, put into mother alloy " umbellule " and mix silicon melt.
Existing adulterating method is owing to be to put into crucible in the lump with polycrystalline, processization material process again, and for P type mother alloy, because itself factor of evaporation is little, resistance is still easy to be controlled.And if N type mother alloy, because itself factor of evaporation is big, if put in the lump with material, resistance is just out of control easily.
Existing doping up method is owing to will do " umbellule " doping up of a spill.The temperature of melt will be through great fluctuation process repeatedly, cause the follow-up crystal pulling rib that breaks easily, and doping time is long, and electric energy consumption increases, and cost rises, and the energy-conservation policy of advocating energetically with country is disagreed and is contrary to.
The utility model content
The utility model purpose: be to solve the problem that exists in the prior art, the utility model provides that a kind of resistance that prevents that mother alloy self evaporation in changing material from causing is out of control to mix and the doping up device with melt temperature generation great fluctuation process, mother alloy simple in structure.
Technical scheme: a kind of mother alloy mixes and the doping up device, comprises doping outer tube, interior pipe, adjusting part, seal valve, vacuumizes assembly and mother alloy groove; One end of said doping outer tube is that the outer converting interface and the other end are the elongated tubular of closedend; Guan Yiduan probes in the doping outer tube in said, and is provided with first magnetite in the port; The pipe the other end is exposed at outside the doping outer tube in said, and the mother alloy groove is equipped with in the port; Said adjusting part is enclosed within on the doping outer tube; Said adjusting part inside is provided with second magnetite; The outer converting interface of said doping outer tube and the vision slit converting interface of single crystal growing furnace are tightly connected; Said seal valve is located at the vision slit place of single crystal growing furnace, when seal valve is closed, for hermetic seal, shuts the single crystal growing furnace vision slit between the vision slit of single crystal growing furnace and the seal valve, prevent air cross into; The said vision slit that vacuumizes assembly and single crystal growing furnace is tightly connected.
Said doping outer tube is circular long steel pipe, and internal diameter is slightly larger than the external diameter of interior pipe.
Said first magnetite is a long strip shape.
The material of said adjusting part is a metal, and the centre is provided with and is used to be enclosed within the circular hole on the doping outer tube, and the external diameter of Circularhole diameter and said doping outer tube is complementary.
The outer converting interface of said doping outer tube and the vision slit converting interface of single crystal growing furnace are tightly connected through anchor ear and sealing-ring.
The interior external diameter of the outer converting interface of said doping outer tube is identical with the interior external diameter of vision slit converting interface.
Said seal valve is a ball valve, and when ball valve was opened fully, pipe passed through in the ball hole made.
Saidly vacuumize that assembly comprises vacuum pump, T-valve, auxiliary pump extraction pipe and the tensimeter of detecting pressure when being used to vacuumize; Said T-valve and auxiliary pump extraction pipe UNICOM are used to control the flow of vacuum pump gas.Vacuumize assembly and mainly be evacuated the doping outer tube (utilizing T-valve to communicate), prevent the influence of air the monocrystalline quality with the auxiliary pump extraction pipe.
Principle of work: the utility model utilizes the characteristics that homopolar-repulsion, heteropole are inhaled mutually between first magnetite and second magnetite; Through moving or rotate adjusting part; Thereby the magnetic force between first magnetite and second magnetite is changed; And then the moving and rotating of pipe in driving, mother alloy in the mother alloy groove is poured in the silicon melt gone.
Beneficial effect: compared with prior art, the mother alloy that the utility model provided mixes and the doping up device helps the resistivity control to N type monocrystalline, reaches the shortening to the doping up time of N/P type monocrystalline.Thereby reach the purpose of enhancing productivity, reducing energy consumption, reduce cost, improve the monocrystalline yield rate.Every stove monocrystalline can shorten 1-2 hour PT, saves nearly 150KW electric weight.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, further illustrate the utility model.
As shown in Figure 1, an end of doping outer tube 1 is that the outer converting interface 7 and the other end are the long steel pipe of circle of closedend, and internal diameter is slightly larger than the external diameter of interior pipe 2; In pipe 2 one ends probe in the doping outer tube 1, and be provided with first magnetite 8 of long strip shape in the port and be difficult for too little; Interior pipe 2 the other ends are exposed at outside the doping outer tube 1, and mother alloy groove 6 is equipped with in the port.
Wherein, mother alloy groove 6 is a cuboidal configuration, is used to place mother alloy, determines the weight of mother alloy according to the size of monocrystalline resistivity.
Wherein, vacuumize that assembly 5 comprises vacuum pump, T-valve 11, auxiliary pump extraction pipe and the tensimeter 12 of detecting pressure when being used to vacuumize; T-valve 11 and auxiliary pump extraction pipe UNICOM are used to control the flow of vacuum pump gas.
In the monocrystalline manufacturing processed, used sometimes primary polycrystalline and flaw-piece are expected end to end; The value of resistivity is inequality, when the target of being controlled greater than this root monocrystalline, has only through pull-rod and carries out preliminary resistivity measurement; Then mix, so just can guarantee the quality of this root monocrystalline.In adulterated process, make the umbellule of a handstand in the past and put into umbrella to mother alloy, then mix in the melt; Want about 2 hours to the completion of mixing from beginning to make umbrella.
What mix for P type monocrystalline is boron; What the N type was single-crystal doped is phosphorus, since the Evaporation Phenomenon of impurity in melted silicon, the velocity of evaporation constant 1 * 10 of boron
-5Cm/s; The velocity of evaporation constant 2 * 10 of phosphorus
-4Cm/s; Control because the factor of time is more restive with respect to the resistivity of N type monocrystalline; When beginning to do N type monocrystalline, put into stove to mother alloy, the resistivity of the monocrystalline head of pulling out is easy to exceed target zone.In the doping process, the value of calculating is wanted accurately, and it is more important to save time.
The above only is the preferred implementation of the utility model; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; Can also make some improvement, these improve the protection domain that also should be regarded as the utility model.
Claims (8)
1. a mother alloy mixes and the doping up device, it is characterized in that: comprise doping outer tube (1), interior pipe (2), adjusting part (3), seal valve (4), vacuumize assembly (5) and mother alloy groove (6); One end of said doping outer tube (1) is that the outer converting interface (7) and the other end are the elongated tubular of closedend; Pipe (2) one ends probe in the doping outer tube (1) in said, and are provided with first magnetite (8) in the port; Pipe (2) the other end is exposed at outside the doping outer tube (1) in said, and mother alloy groove (6) is equipped with in the port; Said adjusting part (3) is enclosed within on the doping outer tube (1); Said adjusting part (3) inside is provided with second magnetite (9); The outer converting interface (7) of said doping outer tube (1) is tightly connected with the vision slit converting interface (10) of single crystal growing furnace; Said seal valve (4) is located at the vision slit place of single crystal growing furnace, when seal valve (4) when closing, is hermetic seal between the vision slit of single crystal growing furnace and the seal valve (4); The said vision slit that vacuumizes assembly (5) and single crystal growing furnace is tightly connected.
2. mother alloy as claimed in claim 1 mixes and the doping up device, it is characterized in that: said doping outer tube (1) is circular long steel pipe, and internal diameter is slightly larger than the external diameter of interior pipe (2).
3. mother alloy as claimed in claim 1 mixes and the doping up device, and it is characterized in that: said first magnetite (8) is a long strip shape.
4. mother alloy as claimed in claim 1 mixes and the doping up device, and it is characterized in that: the material of said adjusting part (3) is a metal, and the centre is provided with and is used to be enclosed within the circular hole on the doping outer tube (1), and the external diameter of Circularhole diameter and said doping outer tube (1) is complementary.
5. mother alloy as claimed in claim 1 mixes and the doping up device, and it is characterized in that: the vision slit converting interface (10) of the outer converting interface of said doping outer tube (1) and single crystal growing furnace is tightly connected through anchor ear and sealing-ring.
6. according to claim 1 or claim 2 mother alloy mixes and the doping up device, and it is characterized in that: the interior external diameter of the outer converting interface (7) of said doping outer tube (1) is identical with the interior external diameter of vision slit converting interface (10).
7. mother alloy as claimed in claim 1 mixes and the doping up device, and it is characterized in that: said seal valve (4) is a ball valve, and when ball valve was opened fully, the ball hole was passed through interior pipe (2).
8. mother alloy as claimed in claim 1 mixes and the doping up device, it is characterized in that: saidly vacuumize that assembly (5) comprises vacuum pump, T-valve (11), auxiliary pump extraction pipe and the tensimeter (12) of detecting pressure when being used to vacuumize; Said T-valve (11) and auxiliary pump extraction pipe UNICOM are used to control the flow of vacuum pump gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201120498757XU CN202359229U (en) | 2011-12-05 | 2011-12-05 | Master-alloy doping and complementary-doping device |
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CN201120498757XU CN202359229U (en) | 2011-12-05 | 2011-12-05 | Master-alloy doping and complementary-doping device |
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CN201120498757XU Expired - Fee Related CN202359229U (en) | 2011-12-05 | 2011-12-05 | Master-alloy doping and complementary-doping device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104213186A (en) * | 2014-08-21 | 2014-12-17 | 杭州慧翔电液技术开发有限公司 | Doping mechanism for monocrystalline silicon growing furnace |
CN108796603A (en) * | 2018-08-29 | 2018-11-13 | 内蒙古中环协鑫光伏材料有限公司 | A kind of process of pulling of crystals doping up alloy |
-
2011
- 2011-12-05 CN CN201120498757XU patent/CN202359229U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104213186A (en) * | 2014-08-21 | 2014-12-17 | 杭州慧翔电液技术开发有限公司 | Doping mechanism for monocrystalline silicon growing furnace |
CN108796603A (en) * | 2018-08-29 | 2018-11-13 | 内蒙古中环协鑫光伏材料有限公司 | A kind of process of pulling of crystals doping up alloy |
CN108796603B (en) * | 2018-08-29 | 2024-04-19 | 内蒙古中环晶体材料有限公司 | Process method for Czochralski single crystal complementary doping alloy |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120801 Termination date: 20161205 |