CN202334945U - Multi-region temperature control panel heater for crystalline silicon solar PECVD equipment - Google Patents
Multi-region temperature control panel heater for crystalline silicon solar PECVD equipment Download PDFInfo
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- CN202334945U CN202334945U CN201120447127XU CN201120447127U CN202334945U CN 202334945 U CN202334945 U CN 202334945U CN 201120447127X U CN201120447127X U CN 201120447127XU CN 201120447127 U CN201120447127 U CN 201120447127U CN 202334945 U CN202334945 U CN 202334945U
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- heating coil
- radiation heating
- temperature
- heated plate
- temperature control
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Abstract
The utility model relates to a panel heater, in particular to a multi-region temperature control panel heater for crystalline silicon solar PECVD equipment. The multi-region temperature control panel heater comprises at least a heating panel; at least a radiating heating coil is arranged on the heating panel; a temperature control meter for controlling the temperature of a heating temperature region is connected to the heating temperature region which is corresponding to the radiating heating coil; the radiating heating coil is embedded into the heating panel; and the heating panel is covered by a metal plate. The multi-region temperature control panel heater provided by the utility model has the characteristics of simple structure, low cost, easiness for realization, and capabilities of saving space and heating uniformly; each radiating heating coil can be used for controlling temperature independently; and the heating panel is covered by the metal plate, so that silicon nitride can be prevented from being deposited on the surface of the heating panel 1, therefore a protective effect is achieved.
Description
Technical field
The utility model relates to panel heater, specifically a kind of multi-region temperature control panel heater that is used for crystal silicon solar PECVD equipment.
Background technology
Solar cell is the photoelectric device that can solar energy be directly changed into electric energy, and the most general solar cell material is a silicon, exists with the form of monocrystalline or polysilicon.Owing to utilize the cost of electricity-generating of silica-based solar cell to be higher than the cost of electricity-generating of conventional method, can reduce cost of electricity-generating through the method that improves solar battery efficiency.
In order to improve photovoltaic crystal silicon battery photoelectric conversion efficiency and useful life; Improve the absorptivity of photovoltaic cell; Strengthen chemical gaseous phase depositing process (PECVD) at the main using plasma of photovoltaic crystal silicon battery surface preparation antireflection film; Also play body passivation and face passivation simultaneously; Reduce the rate of decay of photovoltaic cell component, plasma enhanced chemical vapor deposition method (PECVD) is that technology is the most ripe in the several method of preparation thin-film material, operation is comparatively simply a kind of, joins continuous automated production.
PECVD is the plasma enhanced chemical vapor deposition method; When chemical vapour deposition (CVD); For chemical reaction can be carried out under lower temperature; Can utilize the activity of plasma to promote reaction, this chemical gaseous phase depositing process is called the plasma enhanced chemical vapor deposition method, and the equipment of realizing this kind processing method is PECVD equipment.
S
iThe uniformity of the refractive index of N film, thickness, film can be through regulating deposition rate stress reaction gas the uniformity of ratio, deposition temperature and plasma come suitably to regulate and revise S
iThe parameter of N film.Antireflective coating S
iN relative film thickness in 580-600nm optimal wavelength scope is 70～80nm (700～800), and the refractive index of film is between 2.0～2.2.Oval tester is the processing quality watch-dog, and it measures S
iThe thickness of N film and refractive index.Sometimes S
iThe quality of N film do not require and need remove from silicon face, again the new S of deposit
iThe N film.
And depositing temperature is a key factor that directly influences the silicon nitride film layer quality.It directly affects compactness, growth rate, the refractive index of rete and finally affects the efficient and the life-span of monoblock solar cell.
The utility model content
The purpose of the utility model is to provide a kind of multi-region temperature control panel heater that is used for crystal silicon solar PECVD equipment.
The purpose of the utility model realizes through following technical scheme:
The utility model comprises at least one heated plate, on this heated plate, is provided with a radiation heating coil at least, on the corresponding heating warm area of said radiation heating coil, is connected with the temp controlled meter of this heating warm area temperature of control; Said radiation heating coil is embedded in the heated plate, on heated plate, is coated with metallic plate; Be respectively equipped with the first radiation heating coil, the second radiation heating coil and the 3rd radiation heating coil on the said heated plate; The first radiation heating coil, the second radiation heating coil and the 3rd radiation heating coil be corresponding first warm area, second warm area and three-temperature-zone respectively; The temp controlled meter control of the temperature of first warm area through being connected with the first radiation heating coil; The temp controlled meter control of the temperature of three-temperature-zone through being connected with the 3rd radiation heating coil, the temperature of second warm area is through being arranged on the temp controlled meter control of said heated plate one side; The said second radiation heating coil is positioned at the centre of heated plate, and the first radiation heating coil and the 3rd radiation heating coil lay respectively at the above and below of the second radiation heating coil; Said heated plate is a plurality of, and the second radiation heating coil on each heated plate is connected successively, and the second corresponding warm area is through a temp controlled meter control temperature; The first radiation heating coil on each heated plate is arranged side by side, and all is positioned at the top of the second radiation heating coil on each heated plate; The 3rd radiation heating coil on each heated plate is arranged side by side, and all is positioned at the below of the second radiation heating coil on each heated plate.
Advantage of the utility model and good effect are:
1. the utility model is simple in structure, cost is low, is easy to realize, saves the space, homogeneous heating; Each radiation heating coil can independent temperature control.
2. the utility model is coated with metallic plate on heated plate, can prevent that silicon nitride from depositing to the surface of heated plate 1, shields.
Description of drawings
Fig. 1 removes the vertical view of metallic plate for the utility model monolithic heated plate;
Fig. 2 is the front view of the utility model monolithic heated plate;
The vertical view that removes metallic plate that Fig. 3 combines for three heated plates of the utility model;
The front view that Fig. 4 combines for three heated plates of the utility model;
Wherein: 1 is heated plate, and 2 is metallic plate, and 3 is first warm area, and 4 is second warm area, and 5 is three-temperature-zone, and 6 is the first radiation heating coil, and 7 is the second radiation heating coil, and 8 is the 3rd radiation heating coil, and 9 is temp controlled meter.
Embodiment
Below in conjunction with accompanying drawing the utility model is done further to detail.
The pecvd process module comprises process cavity and ancillary equipment.Process cavity can be divided into three parts on the carrier plate transmission direction: the isothermal region or the thermal treatment zone, the plasma that has microwave source and process heaters or plated film district and cooling zone, wherein, the cooling zone also can be divided into independent module.
Pipeline through two pumps can the exhaust process chamber.Two relevant vacuum angle valves can be arranged on the rear portion of system, and can implement cleaning easily.
Pharoid is positioned on the Pit cover and cavity bottom, can solar battery sheet be heated to technological temperature.Process heaters (pharoid) is installed in plated film district subsequently, and can technological temperature be maintained steady temperature.
The multi-region temperature control panel heater of the utility model comprises at least one heated plate 1; On this heated plate 1, be provided with a radiation heating coil at least, on the corresponding heating warm area of said radiation heating coil, be connected with the temp controlled meter of this heating warm area temperature of control; The radiation heating coil is embedded in the heated plate 1, on heated plate 1, is coated with metallic plate 2, can prevent that silicon nitride from depositing to the surface of heated plate 1, shields.
Like Fig. 1, shown in Figure 2; Be respectively equipped with the first radiation heating coil 6, the second radiation heating coil 7 and the 3rd radiation heating coil 8 on the heated plate 1 of present embodiment; Corresponding respectively first warm area 3 of the first radiation heating coil 6, the second radiation heating coil 7 and the 3rd radiation heating coil 8, second warm area 4 and the three-temperature-zone 5; The temp controlled meter control of the temperature of first warm area 3 through being connected with the first radiation heating coil 6; The temp controlled meter control of the temperature of three-temperature-zone 5 through being connected with the 3rd radiation heating coil 8, the temperature of second warm area 4 is through being arranged on the temp controlled meter control of said heated plate 1 one sides.The second radiation heating coil 7 is positioned at the centre of heated plate 1, and the first radiation heating coil 6 and the 3rd radiation heating coil 8 lay respectively at the above and below of the second radiation heating coil 7.
The radiation heating coil of the utility model can be armour shape heater strip; Can control heating-up temperature through temp controlled meter, can in 30 minutes, temperature be heated to 350 ℃, in this temperature-rise period; Can utilize different capacity to realize heating up, temperature uniformity is controlled in 5%.Use the PECVD equipment of the utility model can realize 1.0 * 1.2 (m
2) even plated film.Can realize in the film thickness uniformity sheet (125mm * 125mm)≤soil 2.5%, between sheet≤soil 4%, between batch≤soil 4%.
All solar battery sheets are loaded in the support plate, and support plate is apart from the panel heater 50cm on top.
Claims (6)
1. one kind is used for the multi-region temperature control panel heater that crystal silicon solar PECVD equips; It is characterized in that: comprise at least one heated plate (1); On this heated plate (1), be provided with a radiation heating coil at least, on the corresponding heating warm area of said radiation heating coil, be connected with the temp controlled meter of this heating warm area temperature of control.
2. by the said multi-region temperature control panel heater that is used for crystal silicon solar PECVD equipment of claim 1, it is characterized in that: said radiation heating coil is embedded in the heated plate (1), on heated plate (1), is coated with metallic plate (2).
3. by claim 1 or the 2 said multi-region temperature control panel heaters that are used for crystal silicon solar PECVD equipment; It is characterized in that: be respectively equipped with the first radiation heating coil (6), the second radiation heating coil (7) and the 3rd radiation heating coil (8) on the said heated plate (1); The first radiation heating coil (6), the second radiation heating coil (7) and the 3rd radiation heating coil (8) be corresponding first warm area (3), second warm area (4) and three-temperature-zone (5) respectively; The temp controlled meter control of the temperature of first warm area (3) through being connected with the first radiation heating coil (6); The temp controlled meter control of the temperature of three-temperature-zone (5) through being connected with the 3rd radiation heating coil (8), the temperature of second warm area (4) is through being arranged on the temp controlled meter control of said heated plate (1) one side.
4. by the said multi-region temperature control panel heater that is used for crystal silicon solar PECVD equipment of claim 3; It is characterized in that: the said second radiation heating coil (7) is positioned at the centre of heated plate (1), and the first radiation heating coil (6) and the 3rd radiation heating coil (8) lay respectively at the above and below of the second radiation heating coil (7).
5. by the said multi-region temperature control panel heater that is used for crystal silicon solar PECVD equipment of claim 3; It is characterized in that: said heated plate (1) is for a plurality of; The second radiation heating coil (7) on each heated plate is connected successively, and corresponding second warm area (4) is through a temp controlled meter control temperature.
6. by the said multi-region temperature control panel heater that is used for crystal silicon solar PECVD equipment of claim 5, it is characterized in that: the first radiation heating coil on each heated plate is arranged side by side, and all is positioned at the top of the second radiation heating coil on each heated plate; The 3rd radiation heating coil on each heated plate is arranged side by side, and all is positioned at the below of the second radiation heating coil on each heated plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120447127XU CN202334945U (en) | 2011-11-11 | 2011-11-11 | Multi-region temperature control panel heater for crystalline silicon solar PECVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120447127XU CN202334945U (en) | 2011-11-11 | 2011-11-11 | Multi-region temperature control panel heater for crystalline silicon solar PECVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202334945U true CN202334945U (en) | 2012-07-11 |
Family
ID=46446907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120447127XU Expired - Fee Related CN202334945U (en) | 2011-11-11 | 2011-11-11 | Multi-region temperature control panel heater for crystalline silicon solar PECVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202334945U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304463A (en) * | 2014-07-10 | 2016-02-03 | 英属开曼群岛商精曜有限公司 | Vertical flat plate type heater |
-
2011
- 2011-11-11 CN CN201120447127XU patent/CN202334945U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304463A (en) * | 2014-07-10 | 2016-02-03 | 英属开曼群岛商精曜有限公司 | Vertical flat plate type heater |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20161111 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |