CN103050553B - Crystalline silicon solar cell with double-side passivation and preparing method thereof - Google Patents
Crystalline silicon solar cell with double-side passivation and preparing method thereof Download PDFInfo
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- CN103050553B CN103050553B CN201210590800.4A CN201210590800A CN103050553B CN 103050553 B CN103050553 B CN 103050553B CN 201210590800 A CN201210590800 A CN 201210590800A CN 103050553 B CN103050553 B CN 103050553B
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Abstract
The invention belongs to the technical field of crystalline silicon solar cells, in particular to a crystalline silicon solar cell with double-side passivation and a preparing method thereof. The crystalline silicon solar cell structurally comprises a base region, a PN junction, a transmission region, a first medium layer, a second medium layer, a third medium layer, an aluminum thin layer, a first intrinsic hydrogenating non-crystalline silicon layer, a second intrinsic hydrogenating non-crystalline silicon layer, front side electrodes and back side electrodes, wherein the PN junction is positioned between the base region and the transmission region, the first medium layer is used as a front side antireflection layer and a passivating layer, the second medium layer is used as a back side passivating layer, the third medium layer is used as a cover layer of the back side passivating layer, the first intrinsic hydrogenating non-crystalline silicon layer is positioned between the first medium layer and the transmission region, the second intrinsic hydrogenating non-crystalline silicon layer is positioned between the base region and the second medium layer, the aluminum thin layer is positioned on the outer side of the third medium layer, and the front side electrodes and the back side electrodes are respectively arranged on the front side and the back side of the crystalline silicon solar cell. The crystalline silicon solar cell has the advantages that the high-quality back side passivation is realized by a microwave PECVD (plasma enhanced chemical vapor deposition) method, and the conversion efficiency can be improved by 1%.
Description
Technical field
The invention belongs to the technical field of crystal silicon solar energy battery, specifically a kind of passivation on double surfaces crystal silicon solar batteries and preparation method thereof.
Background technology
Solar cell is the photoelectric device that solar energy can be directly changed into electric energy.The most general solar cell material is silicon, exists with the form of monocrystalline or polysilicon.Owing to utilizing the cost of electricity-generating of cost of electricity-generating higher than conventional method of silica-based solar cell, cost of electricity-generating can be reduced by the method improving solar battery efficiency.
As shown in Figure 1, conventional solar battery structure comprises aluminium thin layer 1, base 2, PN junction 3, emitter region 4, dielectric layer 5, front electrode 6 and backplate 7.PN junction 3 is arranged between the base 2 of solar battery sheet and emitter region 4, and when incident light excites generation electron hole pair.Dielectric layer 5, as the antireflection layer of solar battery sheet, is used as the passivation layer on surface, emitter region 4 equally.Described front electrode 6 and backplate 7 are placed in efficient crystal silicon solar batteries front and back respectively.
Current crystal silicon solar batteries manufacturing process steps is as follows: first carried out cleaning and corrode pyramid matte by silicon chip of solar cell, diffusion technology makes PN junction, etching technics removes PSG phosphorosilicate glass, PECVD method is utilized to carry out passivation on double surfaces, sintering process makes front electrode and backplate, finally completes the making of solar cell.
When in illumination to solar cell, PN junction 3 both sides produce electron hole pair.Electrons spread through PN junction 3, to more low-energy zone, spread round about by hole, produces cation, and produce cation in base in emitter region.When emitter region and formation loop, base, have electric current in loop and flow through.Photoelectric conversion efficiency, by some parameter influences, comprises speed and the light degree of reflection in electronics and hole in solar cell.
When compound tense occurs for electronics and hole, wherein, electronics is contrary with movement of hole direction, compound each other.Each electron-hole pair is when solar cell compound, and charge carrier disappears, and can reduce the efficiency of solar cell thus.In the intrinsic silicon that compound can occur in cell piece or on the surface of cell piece.In intrinsic silicon, compound is because the quantity of defect determines.On the surface of cell piece, compound determines by the quantity of dangling bonds the unsaturation dangling bonds being namely present in surface.Because the silicon crystal lattice of cell piece ends at cell piece surface, so dangling bonds are also positioned at the surface of cell piece.These unsaturated chemical bonds play a part defect, and be positioned at silicon can be with scope, and therefore become the recombination site of electron hole pair.
By reducing surface recombination, the surface passivation of cell piece greatly can improve the efficiency of solar energy solar battery sheet.Passivation is defined as the chemistry termination of the dangling bonds on silicon crystal lattice surface.In order to the surface of passivation cell sheet, form dielectric layer from the teeth outwards.Thus the quantity of the dangling bonds on surface is reduced by 3 or 4 orders of magnitude.For solar cell application, dielectric layer is silicon nitride layer normally.Major part dangling bonds silicon or nitrogen-atoms saturated.Because silicon nitride is non-crystalline material, the silicon crystal lattice between emitter region extremely mates, and the non crystalline structure mismatch of dielectric layer.Therefore, on the surface after dielectric layer is formed, the quantity of dangling bonds is enough to the efficiency significantly reducing solar battery sheet, and this just requires the additional passivation on surface, such as hydrogen passivation.When polysilicon solar cell, hydrogen can help the defect center on passivation crystal boundary.
When dielectric layer 5 is silicon nitride layers, by introducing the optimal concentration of the hydrogen atom in intrinsic dielectric layer.Optimum hydrogen atom concentration affects by multiple factor, comprises the method for property of thin film and metallization medium layer, changes between 5% and 20%.After having deposited dielectric layer, solar battery sheet has carried out high-temperature annealing process, is sometimes referred to as sintering process, and cell piece forms Metal Contact.
The solar cell of said structure is conventional solar cell, and we need the efficiency improving solar cell.As everyone knows, the optimum hydrogen atom concentration in intrinsic dielectric layer is the key parameter for hydrogen atom passivation technology.Such as, according to estimates because surface lacks hydrogen atom passivation, the efficiency of cell piece can be reduced to 12-13% from about 14-15%.How raising the efficiency further, reducing costs is the elementary object of domestic and international crystal silicon solar energy battery research field.
Summary of the invention
For the problems referred to above, the object of the present invention is to provide a kind of passivation on double surfaces crystal silicon solar batteries and preparation method thereof.
To achieve these goals, the present invention is by the following technical solutions:
A kind of passivation on double surfaces crystal silicon solar batteries, comprise base, PN junction, emitter region, first medium layer, second dielectric layer, 3rd dielectric layer, aluminium thin layer, first intrinsic hydrogenated amorphous silicon layer, second intrinsic hydrogenated amorphous silicon layer, front electrode and backplate, wherein PN junction is between base and emitter region, described 3rd dielectric layer is as front antireflection layer and passivation layer, described second dielectric layer is as backside passivation layer, described first medium layer is as the cap rock of described back side dielectric layer, described second intrinsic hydrogenated amorphous silicon layer is the 3rd between dielectric layer and emitter region, described first intrinsic hydrogenated amorphous silicon layer is between base and second dielectric layer, described aluminium thin layer is positioned at the outside of first medium layer, described front electrode and backplate are placed in crystal silicon solar batteries front and back respectively.
Described 3rd dielectric layer and first medium layer have cation as passivation layer, and material is silicon nitride, carborundum or silica.
Described silicon nitride internal fixtion ion concentration is 1010-1011cm
-3, described carborundum internal fixtion ion concentration is up to 1011cm
-3, described silica internal fixtion ion concentration is 1010-1011cm
-3.
The H concentration that described 3rd dielectric layer and first medium layer contain is 5-15%.
Described silicon nitride film layer refractive index is within 2.15, and thicknesses of layers is within 97nm.
Described second dielectric layer has anion as passivation layer, and anion concentration is up to 1013cm
-3, material is aluminium oxide, and described aluminium oxide thin-film refractive index is within 1.70, and thicknesses of layers is within 60nm.
The thicknesses of layers of described first intrinsic hydrogenated amorphous silicon layer and the second intrinsic hydrogenated amorphous silicon layer is within 10nm.
A kind of preparation method of passivation on double surfaces crystal silicon solar batteries, comprise described silicon chip of solar cell carried out clean and corrode pyramid matte, diffusion technology makes PN junction, etching technics gets rid of PSG phosphorosilicate glass, manufacture passivation on double surfaces layer, adopt silk screen printing, sintering prepares front electrode and backplate, finally completes the making of solar cell.
Described manufacture passivation on double surfaces layer carries out in microwave PECVD system, comprises following several step:
Cell piece is transmitted into load chamber;
Reduce the vacuum degree of described load chamber;
Described cell piece is transferred to the first process cavity;
Sink respectively on described base and emitter region in described first process cavity
Long-pending first intrinsic hydrogenated amorphous silicon layer and the second intrinsic hydrogenated amorphous silicon layer;
Described cell piece is transferred to the second process cavity;
In described second process cavity, the first intrinsic hydrogenated amorphous silicon layer deposits second dielectric layer;
Described cell piece is transferred to the 3rd process cavity;
In described 3rd process cavity, second dielectric layer deposits first medium layer;
In described 3rd process cavity, the second intrinsic hydrogenated amorphous silicon layer deposits the 3rd dielectric layer;
Described cell piece is transferred out described microwave PECVD system.
Advantage of the present invention and beneficial effect are:
1. the present invention utilizes microwave PECVD to use SiH at the first technical module
4(silane) and H
2as precursor gas, can the intrinsic hydrogenated amorphous silicon layer of deposition intrinsic silicon.
2. the invention provides one utilizes microwave PECVD method to come depositing Al Ox dielectric layer and SiN dielectric layer as passivation layer on solar battery sheet.Allow system construction to become for the treatment of large-area cell piece to implement the AlOx passivation layer on solar battery sheet and the deposition on SiN passivation layer by the method, thus utilize the high deposition rate of system and excellent uniformity of film.
3. the present invention utilizes microwave PECVD method to realize high-quality back surface passivation, can improve transformation efficiency 1%.
4. microwave PECVD feature of the present invention is to have seven families of power and influence, 10 vacuum cavities, can simultaneously deposition cell sheet back surface AlOx/SiN medium composite bed and front SiN dielectric layer, four preheating cavity structures are completely the same, be convenient to quick-detachment, upper deposition and lower deposition when can realize not destroying thermal field and vacuum.
Accompanying drawing explanation
Fig. 1 is the structural representation of conventional solar cell;
In Fig. 1: 1 is aluminium thin layer; 2 is base; 3 is PN junction; 4 is emitter region; 5 is dielectric layer; 6 is front electrode; 7 is backplate.
Fig. 2 is structural representation of the present invention;
Fig. 3 is the structure chart of microwave PECVD system of the present invention.
Fig. 2, in Fig. 3: 8 is aluminium thin layer, 9 is first medium layer, 10 is second dielectric layer, 11 is the first intrinsic hydrogenated amorphous silicon layer, 12 is base, 13 is PN junction, 14 is emitter region, 15 is the second intrinsic hydrogenated amorphous silicon layer, 16 is the 3rd dielectric layer, 17 is front electrode, 18 is backplate, 26 is load chamber, 28 is the first preheating cavity, 29 is the first process cavity, 30 is the second preheating cavity, 32 is the 3rd preheating cavity, 34 is the second process cavity, 35 is the 4th preheating cavity, 37 is the 5th preheating cavity 37, 39 is the 3rd process cavity, 40 is cooling chamber, 42 is unloading chamber, 19, 20, 21, 22, 23, 24 is vacuum pump group, 25, 27, 31, 33, 36, 38, 41, 43 is the family of power and influence.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
The passivating method on Si surface has two kinds.The first reduces the boundary defect concentration on Si surface, such as, by the dangling bonds of H atom passivation Si.This method is chemical passivation.Second method is by the built-in field on surface, and namely reduce Si surface minority carrier density, this method, field effect passivation, can be adulterated by interface or deposit fixed ion to realize in Si surface film.
AlOx has the very high anion of concentration (up to 1013cm
-3).Nearly all other materials (particularly SiO
2and a-SiNx:H) there is the very low anion of concentration.For AlOx, anion is positioned at SiOx and AlOx intersection on Si.In addition, the anion concentration in AlOx depends on the preparation method of AlOx.Anion concentration in the AlOx film that anion concentration in the AlOx film prepared by plasma asistance ALD and PECVD is prepared higher than hot ALD.
The another one effect of AlOx is that during heating treatment (annealing and sintering process) can provide hydrogen to Si surface.Thus AlOx film can play the effect of chemical passivation, be deposited directly to the Si of H termination or comprise on the Si of deposited SiOx-layers (such as by PECVD or ALD), the own inactivating performance of SiOx layer very poor (when namely not having AlOx film).
As shown in Figure 2, the present invention includes base 12, PN junction 13, emitter region 14, first medium layer 9, second dielectric layer 10, the 3rd dielectric layer 16, the intrinsic hydrogenated amorphous silicon layer 15 of aluminium thin layer 8, first intrinsic hydrogenated amorphous silicon layer 11, second, front electrode 17 and backplate 18, wherein PN junction 13 is between base 12 and emitter region 14,3rd dielectric layer 16 is as front antireflection layer and passivation layer, second dielectric layer 10 is as backside passivation layer, and first medium layer 9 is as the cap rock of back side dielectric layer 10.Second intrinsic hydrogenated amorphous silicon layer 15 is between the 3rd dielectric layer 16 and emitter region 14, first intrinsic hydrogenated amorphous silicon layer 11 is between base 12 and second dielectric layer 10, aluminium thin layer 8 is positioned at the outside of first medium layer 9, and front electrode 17 and backplate 18 are placed in crystal silicon solar batteries front and back respectively.
3rd dielectric layer 16 and first medium layer 9 have cation as passivation layer, and material is silicon nitride, carborundum or silica.Silicon nitride internal fixtion ion concentration is 1010-1011cm
-3, carborundum internal fixtion ion concentration is up to 1011cm
-3, silica internal fixtion ion concentration is 1010-1011cm
-3.The H concentration that 3rd dielectric layer 16 and first medium layer 9 contain is 5-15%.Silicon nitride film layer refractive index is within 2.15, and thicknesses of layers is within 97nm.Second dielectric layer 10 has anion as passivation layer, and anion concentration is up to 1013cm
-3, material is aluminium oxide, and described aluminium oxide thin-film refractive index is within 1.70, and thicknesses of layers is within 60nm.The thicknesses of layers of the first intrinsic hydrogenated amorphous silicon layer 11 and the second intrinsic hydrogenated amorphous silicon layer 15 is within 10nm.
The preparation method of passivation on double surfaces crystal silicon solar batteries, comprise described silicon chip of solar cell carried out clean and corrode pyramid matte, diffusion technology makes PN junction, etching technics gets rid of PSG phosphorosilicate glass, manufacture passivation on double surfaces layer, adopt silk screen printing, sintering prepares front electrode and backplate, finally completes the making of solar cell.
Described manufacture passivation on double surfaces layer carries out in microwave PECVD system, and pecvd process module comprises the first process cavity 29, second process cavity 34 and the 3rd process cavity 39, and wherein the first technical module 29 uses SiH
4and H
2as precursor gas, can the intrinsic hydrogenated amorphous silicon layer of deposition intrinsic silicon, the second technique film block 34 uses TMA (trimethyl aluminium) and N
2o, can depositing Al Ox rete as precursor gas.3rd technique film block 39 uses SiH
4and NH
3(ammonia), as precursor gas, successively can carry out upper and lower deposition SiN dielectric layer.
Manufacture passivation on double surfaces layer, comprise following several step:
Cell piece is transmitted into load chamber 26;
Reduce the vacuum degree of described load chamber 26;
Described cell piece is transferred to the first process cavity 29;
On described base 12 and emitter region 14, the first intrinsic hydrogenated amorphous silicon layer 11 and the second intrinsic hydrogenated amorphous silicon layer 15 is deposited respectively in described first process cavity 29;
Described cell piece is transferred to the second process cavity 34;
In described second process cavity 34, the first intrinsic hydrogenated amorphous silicon layer 11 deposits second dielectric layer 10;
Described cell piece is transferred to the 3rd process cavity 39;
In described 3rd process cavity 39, second dielectric layer 10 deposits first medium layer 9;
In described 3rd process cavity 39, the second intrinsic hydrogenated amorphous silicon layer 15 deposits the 3rd dielectric layer 16;
Described cell piece is transferred out described microwave PECVD system.
The present invention is on the p-type fused silicon chip of 1.3 Ω cnm in resistivity, and first use the PECVD of Standard linear plasma source structure to deposit in the first process cavity 29, the intrinsic hydrogenated amorphous silicon layer of deposition intrinsic silicon, process conditions are precursor gas SiH
44sccm, H
24sccm, power 12W, deposition power 1Torr, deposition 91s, intrinsic layer thickness is 5nm, and this intrinsic layer can cover silicon chip surface completely, the silicon dangling bonds of saturated silicon chip surface, good passivation is carried out to silicon chip surface, make silicon chip surface recombination rate drop to the minimum 3cm/s in the world, thus obtain higher solar cell conversion efficiency, especially obtain higher open circuit voltage.
Secondly use the PECVD of Standard linear plasma source structure to deposit in the second process cavity 34, TMA flow is 100sccm, N
2o flow is 2000sccm, and setting depositing temperature is 350 DEG C, and power is 2000W, and transmission speed is set as 150cm/min, and aluminium oxide, the refractive index of deposition 30nm are 1.64.
The PECVD reusing Standard linear plasma source structure deposits in the 3rd process cavity 39, SiH
4flow is 300sccm, NH3 flow 1800sccm, sedimentation time 30Pa, average power 2000W, depositing temperature 400 DEG C, deposit thickness 80nm, the SiN cap rock of refractive index 2.01.
The PECVD of Standard linear plasma source structure is finally used to deposit in the 3rd process cavity, SiH4 flow 300sccm, NH
3flow is 1800sccm, sedimentation time 30Pa, and average power is 2000W, and depositing temperature is 400 DEG C, and deposit thickness is 80nm, and refractive index is the SiN antireflection layer of 2.01.
The system of PECVD system construction one-tenth process area battery sheet can high speed deposition dielectric layer.One or more cell piece is arranged in plasma chamber.Precursor gas passes into chamber, applies microwave power activated plasma, flows through the dielectric layer material of surface with deposition of desired of cell piece.The present invention at a large amount of solar battery sheet of relatively short time-triggered protocol, thus reduces the cost of cvd dielectric layer.In addition, on solar battery sheet, the microwave PECVD system of deposition uniformity can improve the efficiency of solar battery sheet.
Claims (1)
1. the preparation method of a passivation on double surfaces crystal silicon solar batteries, it is characterized in that: comprise silicon chip of solar cell carried out clean and corrode pyramid matte, diffusion technology makes PN junction, etching technics gets rid of PSG phosphorosilicate glass, manufacture passivation on double surfaces layer, adopt silk screen printing, sintering prepares front electrode and backplate, finally completes the making of solar cell;
Described manufacture passivation on double surfaces layer carries out in microwave PECVD system, comprises following several step:
Cell piece is transmitted into load chamber (26);
Reduce the vacuum degree of described load chamber (26);
Described cell piece is transferred to the first process cavity (29);
The inherent base of described first process cavity (29) (12) and emitter region (14) deposit the first intrinsic hydrogenated amorphous silicon layer (11) and the second intrinsic hydrogenated amorphous silicon layer (15) respectively;
Described cell piece is transferred to the second process cavity (34);
In described second process cavity (34), the first intrinsic hydrogenated amorphous silicon layer (11) deposits second dielectric layer (10);
Described cell piece is transferred to the 3rd process cavity (39);
In described 3rd process cavity (39), in second dielectric layer (10) upper deposition first medium layer (9);
In described 3rd process cavity (39), in the upper deposition the 3rd dielectric layer (16) of the second intrinsic hydrogenated amorphous silicon layer (15);
Described cell piece is transferred out described microwave PECVD system.
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| CN103311340B (en) * | 2013-05-15 | 2016-08-24 | 常州天合光能有限公司 | Solar cell of laminate film passivating back and preparation method thereof |
| US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
| CN106169510B (en) * | 2016-09-29 | 2017-09-01 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
| CN107731935A (en) * | 2017-09-11 | 2018-02-23 | 中节能太阳能科技（镇江）有限公司 | A kind of preparation method carried on the back passivation crystal silicon solar batteries and its carry on the back passivation film |
| CN108153021B (en) * | 2018-01-04 | 2020-11-24 | 昆山龙腾光电股份有限公司 | Array substrate, display device and manufacturing method of array substrate |
| DE102018108158B4 (en) * | 2018-04-06 | 2023-06-07 | Hanwha Q Cells Gmbh | Bifacial solar cell, solar module and manufacturing method for a bifacial solar cell |
| CN111244223A (en) * | 2018-11-29 | 2020-06-05 | 财团法人金属工业研究发展中心 | Method for forming silicon-based laminated layer and method for manufacturing silicon-based solar cell |
| DE102019114498A1 (en) * | 2019-05-29 | 2020-12-03 | Hanwha Q Cells Gmbh | Wafer solar cell, solar module and method for manufacturing the wafer solar cell |
| CN113161431B (en) * | 2020-12-25 | 2023-08-25 | 浙江晶科能源有限公司 | Silicon-based solar cell and preparation method thereof |
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