CN202307791U - Dry etching bottom electrode and dry etching device - Google Patents
Dry etching bottom electrode and dry etching device Download PDFInfo
- Publication number
- CN202307791U CN202307791U CN2011204535290U CN201120453529U CN202307791U CN 202307791 U CN202307791 U CN 202307791U CN 2011204535290 U CN2011204535290 U CN 2011204535290U CN 201120453529 U CN201120453529 U CN 201120453529U CN 202307791 U CN202307791 U CN 202307791U
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- dry etching
- bottom electrode
- etching bottom
- support protrusion
- utility
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Abstract
The utility model discloses a dry etching bottom electrode and a dry etching device which are mainly designed for improving a dry etching technology. The dry etching bottom electrode provided by the utility model comprises an electrode base plate and support bulges, wherein the support bulges are arranged on the electrode base plate in an array mode, and are of a semispherical structure. According to the utility model, the existing support bulges which are of a cubic structure are replaced by the support bulges which are of a semi-spherical structure, and the surface contact between the dry etching bottom electrode and a glass base plate arranged on the dry etching bottom electrode is replaced by point contact, so that the contact area between the dry etching bottom electrode and the glass base plate is reduced greatly, the temperature difference between a contact area and a non-contact area is reduced, the ashing effect is improved, and further the adverse influence on the subsequent manufacturing technology are avoided.
Description
Technical field
The utility model relates to a kind of dry etching technical field, relates in particular to a kind of improved dry etching bottom electrode and Drycorrosion apparatus.
Background technology
Dry etch process is behind mask exposure, to the nonmetal process of carrying out the film etching of substrate.If in manufacture process, adopted half exposure technique, in doing the process at quarter, just need to increase podzolic process to glue.As illustrated in fig. 1 and 2, in the prior art, the support protrusion 2 (Embossing) that array is provided with on the electrode plate 1 of dry etching bottom electrode is a cube structure.As shown in Figure 3, one treats that the glass substrate 3 of ashing is placed on the dry etching bottom electrode, waits for podzolic process.In the process that realizes the utility model; The inventor find on the electrode plate 1 of dry etching bottom electrode cube support protrusion 2 its performance support and the absorption glass substrate in; Because the existence of stress and temperature action; Make zone and relief area that the dry etching bottom electrode contacts with glass substrate that very big-difference arranged, should can cause the ashing effect between zones of different different than big-difference, and then influence follow-up processing quality.Particularly existing the manufacturing in the 4Mask technology that TFT-LCD adopted, it is bad the manufacturing relevant with the dry etching bottom electrode to occur, this bad be a big persistent ailment of array processes, not only cause to be difficult in percent defective height and the process monitor.
The utility model content
To the problems referred to above, the utility model provides a kind of can effectively the improvement to make badly, improves the dry etching bottom electrode and the Drycorrosion apparatus of workmanship.
For achieving the above object, the said dry etching bottom electrode of the utility model comprises electrode plate, and array is arranged on the support protrusion on the said electrode plate, and this support protrusion is a hemispherical dome structure.
Further, the said dry etching bottom electrode of the utility model also comprises: be arranged on the insulating barrier on said electrode plate and the said hemispherical dome structure support protrusion.
Preferably, the material of said insulating barrier is a pottery.
Especially, the projection circular diameter of said hemispherical dome structure support protrusion on said electrode plate is 1.24mm.
Especially, the height of described hemispherical dome structure support protrusion is 0.62mm.
Further, also be provided with the vacuum suction hole on the described hemispherical dome structure support protrusion.
Especially, the aperture in described vacuum suction hole is 0.05mm.
For achieving the above object, the said Drycorrosion apparatus of the utility model comprises at least: top electrodes, and with the bottom electrode of the parallel relative configuration of said top electrodes, said bottom electrode is above-mentioned dry etching bottom electrode.
The beneficial effect of the utility model:
The said dry etching bottom electrode of the utility model changes the hemispherical dome structure support protrusion into through the support protrusion with existing cube structure; The dry etching bottom electrode contacted with face between the glass substrate change a contact into; Reduced the contact area of dry etching bottom electrode and glass substrate greatly; Reduced the temperature contrast in contact area and noncontact zone, improved the ashing effect, and then avoided harmful effect follow-up manufacturing process.
In addition, the utility model adopts the dry etching bottom electrode of hemispherical dome structure support protrusion, can avoid scratching the glass substrate that is placed on this dry etching bottom electrode.
Description of drawings
Fig. 1 is the structural representation of dry etching bottom electrode in the prior art;
Fig. 2 is that the A-A of Fig. 1 is to view;
Fig. 3 is the sketch map that is placed with glass substrate on the dry etching bottom electrode of the prior art;
Fig. 4 is the structural representation of the described dry etching bottom electrode of the utility model;
Fig. 5 is that the B-B of Fig. 4 is to view;
Fig. 6 is the sketch map that is placed with glass substrate on the described dry etching bottom electrode of the utility model.
Fig. 7 is the dimensional drawing of the dry etching bottom electrode described in the utility model embodiment
Embodiment
Below in conjunction with Figure of description the utility model is done further description.
To shown in Figure 6, the said dry etching bottom electrode of the utility model comprises electrode plate 1 like Fig. 4, and array is arranged on the support protrusion 2 on the said electrode plate 1, and this support protrusion 2 is a hemispherical dome structure.
As the utility model embodiment further, described dry etching bottom electrode also comprises: be arranged on the insulating barrier 4 on said electrode plate 1 and the said hemispherical dome structure support protrusion 2.Preferably, the material of this insulating barrier is chosen as pottery.
The dry etching bottom electrode that present embodiment is described comprises electrode plate 1, and array is arranged on the support protrusion 2 on the said electrode plate 1, and this support protrusion 2 is a hemispherical dome structure.This electrode plate 1 and support protrusion 2 are provided with ceramic insulating layer.As shown in Figure 7, the projection circular diameter of this hemispherical dome structure support protrusion 2 on said electrode plate 1 is 1.24mm.The distance of the upper surface of the peak distance electrode base plate 1 of described hemispherical dome structure support protrusion 2 is 0.62mm.Spacing between each hemispherical dome structure support protrusion 2 can be set according to the size and the demand of reality.Also being provided with the aperture on this hemispherical dome structure support protrusion 2 is the vacuum suction hole of 0.05mm.This support protrusion 2 can not only play support and adsorb the glass substrate that is placed on it; Reduce the contact area of dry etching bottom electrode and glass substrate; Reduce the temperature contrast in contact area and noncontact zone, improve the ashing effect, and then avoid harmful effect follow-up manufacturing process; Can also effectively avoid scratching glass substrate.
The described Drycorrosion apparatus of the utility model comprises at least: top electrodes, and with the bottom electrode of the parallel relative configuration of said top electrodes, said bottom electrode is above-mentioned dry etching bottom electrode.Particularly, can adopt enforcement 1 described dry etching bottom electrode.
The utility model has reduced the contact area of bottom electrode and glass substrate, thereby has effectively improved the ashing effect, and then improved follow-up processing quality under the function that does not influence support and absorption glass substrate.
More than; Be merely the preferred embodiment of the utility model; But the protection range of the utility model is not limited thereto; Any technical staff who is familiar with the present technique field is in the technical scope that the utility model discloses, and the variation that can expect easily or replacement all should be encompassed within the protection range of the utility model.Therefore, the protection range of the utility model should be as the criterion with the protection range that claim was defined.
Claims (8)
1. a dry etching bottom electrode is characterized in that, comprises electrode plate, and array is arranged on the support protrusion on the said electrode plate, and this support protrusion is a hemispherical dome structure.
2. dry etching bottom electrode according to claim 1 is characterized in that, also comprises: be arranged on the insulating barrier on said electrode plate and the said hemispherical dome structure support protrusion.
3. dry etching bottom electrode according to claim 2 is characterized in that, the material of said insulating barrier is a pottery.
4. according to each described dry etching bottom electrode of claim 1～3, it is characterized in that the projection circular diameter of said hemispherical dome structure support protrusion on said electrode plate is 1.24mm.
5. dry etching bottom electrode according to claim 4 is characterized in that, the height of described hemispherical dome structure support protrusion is 0.62mm.
6. according to each described dry etching bottom electrode of claim 1～3, it is characterized in that, also be provided with the vacuum suction hole on the described hemispherical dome structure support protrusion.
7. dry etching bottom electrode according to claim 6 is characterized in that, the aperture in described vacuum suction hole is 0.05mm.
8. Drycorrosion apparatus comprises at least: top electrodes, and with the bottom electrode of the parallel relative configuration of said top electrodes, it is characterized in that said bottom electrode is any one a described dry etching bottom electrode in the claim 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204535290U CN202307791U (en) | 2011-11-15 | 2011-11-15 | Dry etching bottom electrode and dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204535290U CN202307791U (en) | 2011-11-15 | 2011-11-15 | Dry etching bottom electrode and dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202307791U true CN202307791U (en) | 2012-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204535290U Expired - Lifetime CN202307791U (en) | 2011-11-15 | 2011-11-15 | Dry etching bottom electrode and dry etching device |
Country Status (1)
| Country | Link |
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| CN (1) | CN202307791U (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103149751A (en) * | 2013-02-19 | 2013-06-12 | 北京京东方光电科技有限公司 | Lower part electrode and manufacturing method thereof |
| CN103500695A (en) * | 2013-10-08 | 2014-01-08 | 京东方科技集团股份有限公司 | Dry etching lower electrode and dry etching device |
| CN103913876A (en) * | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | Dry etching carrying device and dry etching device |
| CN106094269A (en) * | 2016-06-20 | 2016-11-09 | 京东方科技集团股份有限公司 | A kind of etching device |
| CN108043654A (en) * | 2018-01-09 | 2018-05-18 | 广西南宁侨盛木业有限责任公司 | It is a kind of to pass plate, gluing automatically and send plate system |
| CN108058242A (en) * | 2018-01-05 | 2018-05-22 | 广西南宁侨盛木业有限责任公司 | A kind of point contact type conveyor chain |
| CN108082849A (en) * | 2018-01-05 | 2018-05-29 | 广西南宁侨盛木业有限责任公司 | A kind of point contact type automatic plate feeding device |
| CN108082848A (en) * | 2018-01-05 | 2018-05-29 | 广西南宁侨盛木业有限责任公司 | A kind of point contact type automatic plate feeding device |
| CN108212666A (en) * | 2018-01-08 | 2018-06-29 | 广西南宁侨盛木业有限责任公司 | A kind of automatic glue application and send plate system |
| CN108249101A (en) * | 2018-01-05 | 2018-07-06 | 广西南宁侨盛木业有限责任公司 | Multistage point contact type send plate system automatically |
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2011
- 2011-11-15 CN CN2011204535290U patent/CN202307791U/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014127581A1 (en) * | 2013-02-19 | 2014-08-28 | 京东方科技集团股份有限公司 | Lower electrode and manufacturing method thereof |
| CN103149751B (en) * | 2013-02-19 | 2015-09-16 | 北京京东方光电科技有限公司 | A kind of lower electrode and preparation method thereof |
| CN103149751A (en) * | 2013-02-19 | 2013-06-12 | 北京京东方光电科技有限公司 | Lower part electrode and manufacturing method thereof |
| CN103500695A (en) * | 2013-10-08 | 2014-01-08 | 京东方科技集团股份有限公司 | Dry etching lower electrode and dry etching device |
| CN103500695B (en) * | 2013-10-08 | 2016-04-27 | 京东方科技集团股份有限公司 | Dry etching lower electrode and Drycorrosion apparatus |
| CN103913876B (en) * | 2014-03-17 | 2017-07-04 | 京东方科技集团股份有限公司 | A kind of bogey and dry etching device for dry etching |
| CN103913876A (en) * | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | Dry etching carrying device and dry etching device |
| CN106094269A (en) * | 2016-06-20 | 2016-11-09 | 京东方科技集团股份有限公司 | A kind of etching device |
| CN106094269B (en) * | 2016-06-20 | 2019-01-11 | 京东方科技集团股份有限公司 | A kind of etching device |
| CN108058242A (en) * | 2018-01-05 | 2018-05-22 | 广西南宁侨盛木业有限责任公司 | A kind of point contact type conveyor chain |
| CN108082849A (en) * | 2018-01-05 | 2018-05-29 | 广西南宁侨盛木业有限责任公司 | A kind of point contact type automatic plate feeding device |
| CN108082848A (en) * | 2018-01-05 | 2018-05-29 | 广西南宁侨盛木业有限责任公司 | A kind of point contact type automatic plate feeding device |
| CN108249101A (en) * | 2018-01-05 | 2018-07-06 | 广西南宁侨盛木业有限责任公司 | Multistage point contact type send plate system automatically |
| CN108212666A (en) * | 2018-01-08 | 2018-06-29 | 广西南宁侨盛木业有限责任公司 | A kind of automatic glue application and send plate system |
| CN108043654A (en) * | 2018-01-09 | 2018-05-18 | 广西南宁侨盛木业有限责任公司 | It is a kind of to pass plate, gluing automatically and send plate system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150709 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150709 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150709 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176, No. 8, Middle West Road, Beijing economic and Technological Development Zone, Beijing Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120704 |