CN203084388U - Lower part electrode - Google Patents
Lower part electrode Download PDFInfo
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- CN203084388U CN203084388U CN 201320076974 CN201320076974U CN203084388U CN 203084388 U CN203084388 U CN 203084388U CN 201320076974 CN201320076974 CN 201320076974 CN 201320076974 U CN201320076974 U CN 201320076974U CN 203084388 U CN203084388 U CN 203084388U
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- protuberance
- substrate body
- lower electrode
- substrate
- ceramic layer
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Abstract
The utility model provides a lower part electrode, and relates to the field of dry etching. The lower part electrode solves the problems that ceramic points and a ceramic layer of the lower part electrode in the prior art are formed by different procedures, the bonding strength of the ceramic points and the ceramic layer is not high, and the ceramic points fall out of the ceramic layer easily. The lower part electrode comprises a metal substrate and an insulating layer, wherein the metal substrate comprises a substrate body and a plurality of projecting parts arranged on the upper surface of the substrate body; the insulating layer covers the upper surface of the substrate body and the projecting parts arranged on the upper surface of the substrate body; and projecting insulating points are formed at the projecting parts. The lower part electrode is suitable for the design and manufacturing of spare parts of an etching device.
Description
Technical field
The utility model relates to the dry etching field, relates in particular to a kind of lower electrode.
Background technology
Existing display comprise array base palte, color membrane substrates and be filled in array base palte and color membrane substrates between liquid crystal.Wherein, comprise glass substrate and be arranged on the layer structure that comprises certain pattern on the described glass substrate on array base palte and the color membrane substrates respectively.In the prior art, form described layer structure by operations such as plated film, exposure, etchings on glass substrate, wherein, etching comprises dry etching and wet etching.
Dry etching generally carries out in vacuum environment, and by a lower electrode support glass substrate, described glass substrate is carried out etching.As shown in Figure 1, existing lower electrode 1 comprises: metal substrate 2 and ceramic layer 3 that is arranged on described metal substrate 2 upper surfaces and the pottery point 4 that protrudes from described ceramic layer 3.Wherein in the dry etching process, described metal substrate is conducted static,, make glass substrate closely contact with lower electrode by electrostatic adsorption.Generally be by plasma etching owing to dry etching, and under certain electric field, carrying out that described ceramic layer is used to avoid the interference of metal substrate to electric field again.Described pottery point is used to support described glass substrate on the one hand, makes things convenient for the circulation of the gas between glass substrate and the lower electrode on the other hand.
But in the dry etching process, metal substrate has uniform temperature, and etching time is shorter, because the distance of pottery point and metallic substrate surfaces is greater than the distance of ceramic layer and metal surface, cause the temperature at ceramic some place to be lower than the temperature of ceramic layer, on glass substrate, form the embossing spot, influence display effect.In addition, the prior art ceramic layer forms by the two procedures deposition with pottery point, i.e. deposition one deck ceramic layer on metal substrate earlier, ceramic deposition point on this ceramic layer then, operation more complicated.Because the pottery point forms in different operations with ceramic layer, and the pottery point is not high with the ceramic layer bond strength, the pottery point comes off from ceramic layer easily simultaneously.
The utility model content
Embodiment of the present utility model provides a kind of lower electrode, and the pottery point of described lower electrode and ceramic layer form through an operation, the bond strength height, and the pottery point is difficult for coming off from ceramic layer.
For achieving the above object, embodiment of the present utility model adopts following technical scheme:
The utility model embodiment provides a kind of lower electrode, comprise metal substrate and insulation course, wherein, described metal substrate comprises: substrate body and a plurality of protuberance that is arranged on described substrate body upper surface, the protuberance that described insulation course covers the upper surface of described substrate body and is arranged on described substrate body upper surface, and in described protuberance place formation protrusion insulating point.
Optionally, the thickness of insulating layer of described substrate body upper surface equates with the thickness of insulating layer of described protuberance upper surface.
Optionally, the upper surface of described protuberance is the plane.
Optionally, described protuberance is arranged with latticed form at the upper surface of described substrate body.
Optionally, described protuberance and described metal substrate are one-body molded.
Optionally, described protuberance is by being provided with the upper surface that other layers are formed on described substrate body.
A kind of lower electrode that the utility model embodiment provides, the metallic substrate surfaces of described lower electrode is provided with protuberance, and ceramic layer forms ceramic point at described protuberance, and ceramic layer formed through an operation with ceramic o'clock like this, the bond strength height, the pottery point is difficult for coming off from ceramic layer.
Description of drawings
Fig. 1 is the sectional structure synoptic diagram of a kind of lower electrode of the prior art part;
The sectional structure synoptic diagram of a kind of lower electrode part that Fig. 2 provides for the utility model embodiment;
Fig. 3 is the sectional structure synoptic diagram of the metal substrate part of lower electrode shown in Figure 2;
The sectional structure synoptic diagram of the another kind of lower electrode part that Fig. 4 provides for the utility model embodiment;
A kind of protuberance sectional structure synoptic diagram that Fig. 5 provides for the utility model embodiment;
Reference numeral:
The 1-lower electrode; The 2-metal substrate; The 3-ceramic layer; 4-pottery point; The 5-insulation course; The 21-substrate body; The 22-protuberance; 51-protrudes insulating point.
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.
The utility model provides a kind of lower electrode, as shown in Figure 2, comprising: metal substrate 2 and insulation course 5, and described metal substrate 2 comprises: substrate body 21 and a plurality of protuberance 22 that is arranged on described substrate body 21 upper surfaces, as shown in Figure 3;
Described insulation course 5 covers the upper surface of described substrate body 21 and the protuberance 22 that is arranged on described substrate body upper surface, and forms protrusion insulating point 51 at described protuberance 22 places.
As shown in Figure 4, described substrate body also can be as shown in Figure 4 step-like, and at the upper surface that substrate body is used for carrying object protuberance is set.Certainly, described substrate body can also be other shapes, and the utility model embodiment is that rectangle shown in Figure 3 is that example is elaborated with described substrate body.
The utility model embodiment provides a kind of lower electrode, the protuberance that the metal substrate of described lower electrode comprises substrate body and is arranged on described substrate body upper surface, the protuberance that described ceramic layer covers the upper surface of described substrate body and is arranged on described substrate body upper surface, and form ceramic point at described protuberance place, described pottery point is to form by one-time process with ceramic layer, the bond strength height, the pottery point is not easy to come off from ceramic layer.Certainly, described lower electrode can also be used for other technological processs such as plated film.
Described metal substrate comprises substrate body and protuberance, and the material that then forms described substrate body and described protuberance is metal.And preferred, the material that forms described substrate body and described protuberance is identical.Described insulation course can be to be formed by insulating material such as pottery, aluminium oxide or micas, and in the utility model embodiment, is that pottery is that example is elaborated with the material that forms described insulation course all.Promptly form ceramic layer at described metal substrate upper surface, then described protrusion insulating point promptly forms ceramic point.
Optionally, the thickness of insulating layer of described substrate body upper surface equates with the thickness of insulating layer of described protuberance upper surface.The upper surface of ceramic layer and pottery point equates with the distance of described metal substrate upper surface like this.When described metal substrate has uniform temperature, identical with the temperature at ceramic some place at ceramic layer.Described lower electrode can be used for dry etching, supports substrate to be etched, has avoided different with the temperature at ceramic some place because of ceramic layer, forms the problem of embossing spot at substrate surface, and then promotes display effect.
Optionally, the upper surface of described protuberance is the plane.The thickness of the ceramic layer on described protuberance is identical with the thickness of metallic substrate surfaces ceramic layer like this.And then when metal substrate had uniform temperature, the temperature of described ceramic layer upper surface was identical with the temperature of described pottery point upper surface.And preferred, the upper surface of described protuberance is coarse plane, for example can be the coarse plane of zigzag, as shown in Figure 5.And when described protuberance was coarse plane, then the upper surface of the insulating ceramics point that forms on described metal substrate was identical with the upper surface of described protuberance, also was the coarse plane shown in the figure.On the one hand, in the dry etching process, described pottery point contacts with described glass substrate by a plurality of points, reduces contact area.And on the other hand, on described protuberance, plate the adhesion that ceramic layer can increase ceramic layer, difficult drop-off again.
Optionally, described protuberance is arranged with latticed form at the upper surface of described substrate body.Help in the dry etching process circulation of the gas between glass substrate and the lower electrode so on the one hand.It is stressed evenly to be placed on glass substrate on the described lower electrode on the other hand, can stress uneven and damage glass substrate.
Optionally, described protuberance and described metal substrate are one-body molded.Protuberance of Xing Chenging and described metal substrate are structure as a whole like this.Wherein, described one-body molded promptly by one-time process formation, and need not following process.For example, can be once to form by punching press or mould.Perhaps, optionally, described protuberance is by being provided with the upper surface that other layers are formed on described substrate body.For example, can be to form described protuberance by welding or other modes at the upper surface of described substrate body.
Optionally, described ceramic layer also covers the surperficial adjacent side that is provided with protuberance with substrate body.For further avoiding in the dry etching process metal substrate to electric field effects.Ceramic layer also covers described substrate body and the surperficial adjacent side that is provided with protuberance, only covers described metal substrate upper surface with respect to ceramic layer, can also avoid coming off of rete.
The above; it only is embodiment of the present utility model; but protection domain of the present utility model is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement all should be encompassed within the protection domain of the present utility model.Therefore, protection domain of the present utility model should be as the criterion with the protection domain of described claim.
Claims (6)
1. lower electrode, comprise metal substrate and insulation course, it is characterized in that, described metal substrate comprises: substrate body and a plurality of protuberance that is arranged on described substrate body upper surface, the protuberance that described insulation course covers the upper surface of described substrate body and is arranged on described substrate body upper surface, and in described protuberance place formation protrusion insulating point.
2. lower electrode according to claim 1 is characterized in that, the thickness of insulating layer of described substrate body upper surface equates with the thickness of insulating layer of described protuberance upper surface.
3. lower electrode according to claim 2 is characterized in that, the upper surface of described protuberance is the plane.
4. lower electrode according to claim 2 is characterized in that described protuberance is arranged with latticed form at the upper surface of described substrate body.
5. according to each described lower electrode of claim 1-4, it is characterized in that described protuberance and described metal substrate are one-body molded.
6. according to each described lower electrode of claim 1-4, it is characterized in that described protuberance is by being provided with the upper surface that other layers are formed on described substrate body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320076974 CN203084388U (en) | 2013-02-19 | 2013-02-19 | Lower part electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320076974 CN203084388U (en) | 2013-02-19 | 2013-02-19 | Lower part electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203084388U true CN203084388U (en) | 2013-07-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320076974 Expired - Lifetime CN203084388U (en) | 2013-02-19 | 2013-02-19 | Lower part electrode |
Country Status (1)
| Country | Link |
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| CN (1) | CN203084388U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103149751A (en) * | 2013-02-19 | 2013-06-12 | 北京京东方光电科技有限公司 | Lower part electrode and manufacturing method thereof |
| CN103913876A (en) * | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | Dry etching carrying device and dry etching device |
| CN105891915A (en) * | 2016-05-19 | 2016-08-24 | 江苏淘镜有限公司 | Manufacturing method of novel UV420 lens |
| WO2018171268A1 (en) * | 2017-03-20 | 2018-09-27 | 京东方科技集团股份有限公司 | Substrate and preparation method therefor, display panel and display device |
| CN111897162A (en) * | 2020-08-18 | 2020-11-06 | 厦门天马微电子有限公司 | Light source assembly, backlight module and display device |
| CN113917720A (en) * | 2021-10-20 | 2022-01-11 | 苏州众芯联电子材料有限公司 | Lower electrode with compact floating point surface structure and manufacturing method thereof |
-
2013
- 2013-02-19 CN CN 201320076974 patent/CN203084388U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103149751A (en) * | 2013-02-19 | 2013-06-12 | 北京京东方光电科技有限公司 | Lower part electrode and manufacturing method thereof |
| CN103149751B (en) * | 2013-02-19 | 2015-09-16 | 北京京东方光电科技有限公司 | A kind of lower electrode and preparation method thereof |
| CN103913876A (en) * | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | Dry etching carrying device and dry etching device |
| CN103913876B (en) * | 2014-03-17 | 2017-07-04 | 京东方科技集团股份有限公司 | A kind of bogey and dry etching device for dry etching |
| CN105891915A (en) * | 2016-05-19 | 2016-08-24 | 江苏淘镜有限公司 | Manufacturing method of novel UV420 lens |
| WO2018171268A1 (en) * | 2017-03-20 | 2018-09-27 | 京东方科技集团股份有限公司 | Substrate and preparation method therefor, display panel and display device |
| US11289512B2 (en) | 2017-03-20 | 2022-03-29 | Boe Technology Group Co., Ltd. | Substrate and manufacturing method thereof, display panel and display device |
| CN111897162A (en) * | 2020-08-18 | 2020-11-06 | 厦门天马微电子有限公司 | Light source assembly, backlight module and display device |
| CN111897162B (en) * | 2020-08-18 | 2022-06-14 | 厦门天马微电子有限公司 | Light source assembly, backlight module and display device |
| CN113917720A (en) * | 2021-10-20 | 2022-01-11 | 苏州众芯联电子材料有限公司 | Lower electrode with compact floating point surface structure and manufacturing method thereof |
| CN113917720B (en) * | 2021-10-20 | 2022-07-05 | 苏州众芯联电子材料有限公司 | Method for manufacturing lower electrode with compact floating point surface structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150702 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150702 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150702 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee after: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing city in Western Daxing District economic and Technological Development Zone, Road No. 8 Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20130724 |
|
| CX01 | Expiry of patent term |