WO2015172586A1 - Sensitive element chip - Google Patents

Sensitive element chip Download PDF

Info

Publication number
WO2015172586A1
WO2015172586A1 PCT/CN2015/071793 CN2015071793W WO2015172586A1 WO 2015172586 A1 WO2015172586 A1 WO 2015172586A1 CN 2015071793 W CN2015071793 W CN 2015071793W WO 2015172586 A1 WO2015172586 A1 WO 2015172586A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
sensitive element
element chip
pyroelectric
electrodes
Prior art date
Application number
PCT/CN2015/071793
Other languages
French (fr)
Chinese (zh)
Inventor
罗豪甦
许晴
赵祥永
林迪
王升
李龙
杨林荣
Original Assignee
上海硅酸盐研究所中试基地
中国科学院上海硅酸盐研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海硅酸盐研究所中试基地, 中国科学院上海硅酸盐研究所 filed Critical 上海硅酸盐研究所中试基地
Publication of WO2015172586A1 publication Critical patent/WO2015172586A1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Definitions

  • the invention relates to the field of microelectronic chips, in particular to a sensitive element chip.
  • the sensitive element chip of the traditional pyroelectric infrared sensor usually adopts a full-electrode configuration.
  • It is a traditional electrode structure in the prior art with a fixed area. If you want to reduce the electrode area to adjust the sensitivity of the sensitive element It is not easy to realize the electrical parameters of components for other purposes. In addition, especially for extremely thin sensitive components, the dielectric loss and capacitance are too high, and the response rate and specific detection rate of the detector are low.
  • the purpose of the present invention is to provide a sensitive element chip, which has a higher pyroelectric coefficient, a smaller dielectric loss and a smaller capacitance than a sensitive element chip with a traditional electrode structure.
  • the invention discloses a sensitive element chip, which includes one or more pyroelectric relaxation ferroelectric single crystal sensitive elements; the upper and lower surfaces of the pyroelectric relaxation ferroelectric single crystal sensitive elements are respectively provided with electrodes, which are arranged in The upper electrode on the upper surface is a single electrode, the lower electrode provided on the lower surface includes a left electrode and a right electrode that are separated from each other, and the left electrode and the right electrode are not connected to each other to form the lower electrode into a divided electrode .
  • the distance between the left electrode and the right electrode is between 0.5 mm and 1 mm.
  • the distance between the left electrode and the right electrode is 0.5 mm.
  • the upper electrode is circular; the left electrode and the right electrode are rectangular.
  • the distance between the rectangular left electrode and the right electrode is equal everywhere.
  • the left electrode and the right electrode are symmetrical with a diameter of the circular upper electrode.
  • the dielectric loss and capacitance of the prepared sensitive element chip are reduced, the dielectric noise of the detector prepared by the sensitive element chip is reduced, the response rate is improved, and the specific detection rate is improved;
  • the split electrode can be polarized at high temperature.
  • FIG. 1 is a schematic diagram of the structure of a traditional electrode on a sensitive element chip in the prior art
  • FIG. 2 is a schematic diagram of the structure of electrodes on a sensitive element chip in an embodiment of the present invention
  • FIG. 3 is a schematic diagram of the comparison of pyroelectric coefficients when the left electrode and the right electrode are at different distances in the present invention
  • FIG. 4 is a schematic diagram of the comparison of capacitance and dielectric loss when the distance between the left electrode and the right electrode in the present invention is different;
  • Fig. 5 is a schematic diagram of the response rate comparison between the present invention and the prior art under different electrode structures
  • Fig. 6 is a schematic diagram of the specific detection rate comparison between the present invention and the prior art under different electrode structures.
  • the sensitive element chip includes one or more pyroelectric relaxation ferroelectric single crystal sensitive elements, the upper and lower surfaces of which are respectively provided with electrodes.
  • the electrodes provided on the upper and lower surfaces are all full electrodes, while in the present invention, the upper electrode provided on the upper surface is a single electrode, and the electrode structure provided on the lower surface is changed from full electrodes to mutual electrodes.
  • the separated left electrode and right electrode are two separate electrodes, arranged in two places on the lower surface, and the two are separated from each other and are not electrically connected or connected, so that the lower electrode on the lower surface is formed It is a divided electrode.
  • FIGS. 3 to 4 are schematic diagrams of the comparison of the pyroelectric coefficient when the left electrode and the right electrode are at different intervals, and the comparison of the capacitance and the dielectric loss when the left electrode and the right electrode are at different intervals.
  • the abscissa is the distance l between the left electrode and the right electrode
  • the ordinate is the pyroelectric coefficient p.
  • the spacing l is between 0.5mm-1mm, The pyroelectric coefficient is large, and the polarization of the left and right electrodes is relatively complete.
  • the abscissa is still the interval l
  • the left ordinate represents the capacitance of the sensitive element
  • the right ordinate represents the dielectric loss
  • the square dot coordinates in Figure 4 represent the capacitance of the sensitive element
  • the dot coordinates represent the dielectric loss. It is also obvious from Fig. 4 that when the distance l is 0.5mm, the capacitance of the sensitive element is only about 200pF, and the dielectric loss is about 5 ⁇ 10-4, which is other values such as 0.1 compared to the distance l.
  • the product of the capacitance of the sensitive element and the dielectric loss is the smallest, that is, the dielectric noise is the smallest. Therefore, it is most preferable that the distance between the left electrode and the right electrode is 0.5 mm.
  • the structure of the upper electrode is circular, the left electrode and the right electrode are rectangular, and the size of the left electrode and the right electrode are the same.
  • the upper surface does not need to lead out the upper electrode, it can be used to absorb infrared light, which increases the absorption efficiency of infrared light, and while the pyroelectric coefficient remains unchanged, the capacitance of the sensitive element is reduced and the capacitance is greatly shortened.
  • the response time of the detector equipped with the sensitive element chip is determined. More preferably, the distance between the left and right electrodes of the rectangle is constant, that is, one side of the left and right electrodes of the rectangle is parallel, or the left and right electrodes are symmetrical with the diameter of the circular upper electrode as the symmetry axis.
  • the regular and symmetrical structure can ensure the polarization effect. Convenient for assembly and manufacturing.
  • FIGS 5 and 6 are the comparison of the response rates of the present invention and the prior art under different electrode structures.
  • the abscissa represents the frequency f
  • the ordinate represents the response rate Rv
  • the square dot coordinates represent the response rate Rv of the conventional electrode structure in the prior art
  • the circle dot coordinates represent the response under the distributed electrode structure of the present invention. It can be clearly seen that, under the same frequency f, the response rate of the distributed electrode structure is nearly 4 times higher than that of the detector in the prior art. It is the effect that the relative dielectric constant is greatly reduced after the split electrode structure is adopted.
  • the abscissa represents the frequency f
  • the ordinate represents the specific detection rate D*
  • the specific detection rate of the detector with the distributed electrode structure is about 1.5 times higher than that of the conventional detector in the prior art at 10 Hz, and As the frequency continues to increase, the difference in the ratio detection rate between the two becomes larger and larger, and the specific detection rate of the detector under the distributed electrode structure is always maintained at a higher level. It is precisely because of the adoption of the divided structure that the dielectric noise is greatly reduced, which brings about the effect.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Radiation Pyrometers (AREA)

Abstract

Provided is a sensitive element chip, comprising one or a plurality of pyroelectric relaxor ferroelectric single crystal sensitive elements. An upper and a lower surface of the pyroelectric relaxor ferroelectric single crystal sensitive element are respectively provided with electrodes. An upper electrode arranged on the upper surface is a single electrode, and a lower electrode arranged on the lower surface comprises a left electrode and a right electrode separated from one another. The left electrode and the right electrode are not connected to one another to form the lower electrode as a divided electrode. The present invention reduces dielectric loss and the capacitance of the sensitive element, the pyroelectric coefficient is higher, and the response rate and specific detectivity of a device prepared using the sensitive element chip are increased.

Description

一种灵敏元芯片A sensitive element chip 技术领域Technical field
本发明涉及微电子芯片领域，尤其涉及一种灵敏元芯片。The invention relates to the field of microelectronic chips, in particular to a sensitive element chip.
背景技术Background technique
传统的热释电红外传感器的灵敏元芯片上通常采用全电极的配置，参阅图1，为现有技术中传统的电极结构，其面积固定，若想要减小电极面积以调控灵敏元的敏感元件的电学参数用于其他用途则不容易实现。另外，尤其对于极薄的灵敏元件而言，其介电损耗和电容过高，探测器的响应率和比探测率较低。The sensitive element chip of the traditional pyroelectric infrared sensor usually adopts a full-electrode configuration. Refer to Figure 1. It is a traditional electrode structure in the prior art with a fixed area. If you want to reduce the electrode area to adjust the sensitivity of the sensitive element It is not easy to realize the electrical parameters of components for other purposes. In addition, especially for extremely thin sensitive components, the dielectric loss and capacitance are too high, and the response rate and specific detection rate of the detector are low.
因此，需要一种新型的灵敏元芯片结构，降低介电损耗和电容，从而提高制备器件的响应率和比探测率。Therefore, a new type of sensitive element chip structure is needed to reduce dielectric loss and capacitance, thereby improving the response rate and specific detection rate of the prepared device.
发明内容Summary of the invention
为了克服上述技术缺陷，本发明的目的在于提供一种灵敏元芯片，相较具有传统电极结构的灵敏元芯片，热释电系数更高，介电损耗和电容更小。In order to overcome the above technical defects, the purpose of the present invention is to provide a sensitive element chip, which has a higher pyroelectric coefficient, a smaller dielectric loss and a smaller capacitance than a sensitive element chip with a traditional electrode structure.
本发明公开了一种灵敏元芯片，包括一个或多个热释电弛豫铁电单晶敏感元；所述热释电弛豫铁电单晶敏感元的上下表面分别设有电极，设于所述上表面的上电极为单电极，设于所述下表面的下电极包括互相分离的左电极及右电极，所述左电极和右电极互不连通将所述下电极成型为一分割电极。The invention discloses a sensitive element chip, which includes one or more pyroelectric relaxation ferroelectric single crystal sensitive elements; the upper and lower surfaces of the pyroelectric relaxation ferroelectric single crystal sensitive elements are respectively provided with electrodes, which are arranged in The upper electrode on the upper surface is a single electrode, the lower electrode provided on the lower surface includes a left electrode and a right electrode that are separated from each other, and the left electrode and the right electrode are not connected to each other to form the lower electrode into a divided electrode .
优选地，所述左电极及右电极的间距为0.5mm-1mm间。Preferably, the distance between the left electrode and the right electrode is between 0.5 mm and 1 mm.
优选地，所述左电极及右电极的间距为0.5mm。Preferably, the distance between the left electrode and the right electrode is 0.5 mm.
优选地，所述上电极呈圆形；所述左电极及右电极呈矩形。Preferably, the upper electrode is circular; the left electrode and the right electrode are rectangular.
优选地，所述矩形左电极及右电极的间距处处相等。 Preferably, the distance between the rectangular left electrode and the right electrode is equal everywhere. To
优选地，所述左电极及右电极以所述圆形上电极的一直径对称。Preferably, the left electrode and the right electrode are symmetrical with a diameter of the circular upper electrode.
采用了上述技术方案后，与现有技术相比，具有以下有益效果：After adopting the above technical scheme, compared with the prior art, it has the following beneficial effects:
1.所制备灵敏元芯片的介电损耗降低，电容降低，由该灵敏元芯片制备的探测器的介电噪声降低，响应率提高，比探测率提高；1. The dielectric loss and capacitance of the prepared sensitive element chip are reduced, the dielectric noise of the detector prepared by the sensitive element chip is reduced, the response rate is improved, and the specific detection rate is improved;
2.特别适用于高介电常数的热释电材料及高介电损耗的热释电材料；2. Especially suitable for pyroelectric materials with high dielectric constant and pyroelectric materials with high dielectric loss;
3.分割电极可高温极化。3. The split electrode can be polarized at high temperature.
附图说明Description of the drawings
图1为现有技术中灵敏元芯片上传统电极的结构示意图；FIG. 1 is a schematic diagram of the structure of a traditional electrode on a sensitive element chip in the prior art;
图2为本发明一实施例中灵敏元芯片上电极的结构示意图；2 is a schematic diagram of the structure of electrodes on a sensitive element chip in an embodiment of the present invention;
图3为本发明中左电极与右电极不同间距时热释电系数对比的示意图；3 is a schematic diagram of the comparison of pyroelectric coefficients when the left electrode and the right electrode are at different distances in the present invention;
图4为本发明中左电极与右电极不同间距时电容与介电损耗对比的示意图；4 is a schematic diagram of the comparison of capacitance and dielectric loss when the distance between the left electrode and the right electrode in the present invention is different;
图5为本发明与现有技术不同电极结构下响应率对比的示意图；Fig. 5 is a schematic diagram of the response rate comparison between the present invention and the prior art under different electrode structures;
图6为本发明与现有技术不同电极结构下比探测率对比的示意图。Fig. 6 is a schematic diagram of the specific detection rate comparison between the present invention and the prior art under different electrode structures.
具体实施方式Detailed ways
以下结合附图与具体实施例进一步阐述本发明的优点。The advantages of the present invention are further described below in conjunction with the drawings and specific embodiments.
参阅图2，为本发明中灵敏元芯片上电极的结构示意图。灵敏元芯片包括有一个或多个热释电弛豫铁电单晶敏感元，其上下表面分别设有电极。如前所述的，现有技术中，设置在上下表面的电极均为全电极，而本发明中，设置在上表面的上电极为单电极，设置在下表面的电极结构由全电极变更为互相分离的左电极及右电极，顾名思义，左电极和右电极为分设的两个电极，排设在下表面的两处，两者互相分开，且不电连接或连通，使得位于下表面的下电极成型为一分割电极。 Refer to FIG. 2, which is a schematic diagram of the structure of the electrode on the sensitive element chip of the present invention. The sensitive element chip includes one or more pyroelectric relaxation ferroelectric single crystal sensitive elements, the upper and lower surfaces of which are respectively provided with electrodes. As mentioned above, in the prior art, the electrodes provided on the upper and lower surfaces are all full electrodes, while in the present invention, the upper electrode provided on the upper surface is a single electrode, and the electrode structure provided on the lower surface is changed from full electrodes to mutual electrodes. The separated left electrode and right electrode, as the name implies, the left electrode and the right electrode are two separate electrodes, arranged in two places on the lower surface, and the two are separated from each other and are not electrically connected or connected, so that the lower electrode on the lower surface is formed It is a divided electrode. To
由于左右电极互相分离，两者间必然具有间距。参阅图3至图4，分别为本发明中左电极与右电极不同间距时热释电系数对比的示意图，及左电极与右电极不同间距时电容与介电损耗对比的示意图。首先参阅图3，其横坐标为左电极与右电极的间距l，纵坐标为热释电系数p，由实验所表示的图表中可明显看出，对于1mol％ Mn掺杂的0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3单晶敏感元，晶体学取向<111>，左电极与右电极的间距l在0.5mm至1mm间时，热释电系数p约为14×10-4C/m2K，而间距l在0.1mm时，热释电系数约为6×10-4C/m2K，间距l在1.5mm时，热释电系数约为8×10-4C/m2K，从而左电极与右电极的间距l在0.5mm至1mm间时明显高于间距l在0-0.5mm和1-1.5mm间时的热释电系数p，则优选的是，间距l在0.5mm-1mm间时，热释电系数较大，左右电极极化较完全。再参阅图4，其横坐标仍为间距l，左纵坐标表示敏感元的电容，右纵坐标表示介电损耗，且图4中方点坐标表示敏感元的电容，圆点坐标表示介电损耗。从图4中也可明显看出，当间距l为0.5mm时，敏感元的电容仅约为200pF，且介电损耗约为5×10-4，则相比于间距l为其他数值如0.1mm、1.0mm和1.5mm的实施例，敏感元的电容与介电损耗的乘积最小，也就是说介电噪声最小。因此，最优选地，左电极和右电极的间距为0.5mm。Since the left and right electrodes are separated from each other, there must be a gap between the two. Refer to FIGS. 3 to 4, which are schematic diagrams of the comparison of the pyroelectric coefficient when the left electrode and the right electrode are at different intervals, and the comparison of the capacitance and the dielectric loss when the left electrode and the right electrode are at different intervals. First, referring to Figure 3, the abscissa is the distance l between the left electrode and the right electrode, and the ordinate is the pyroelectric coefficient p. It can be clearly seen from the graph represented by the experiment that for 1mol% Mn doped 0.71Pb(Mg1 /3Nb2/3)O3-0.29PbTiO3 single crystal sensitive element, crystallographic orientation <111>, when the distance l between the left electrode and the right electrode is between 0.5mm and 1mm, the pyroelectric coefficient p is about 14×10-4C/ m2K, and when the spacing l is 0.1mm, the pyroelectric coefficient is about 6×10-4C/m2K, when the spacing l is 1.5mm, the pyroelectric coefficient is about 8×10-4C/m2K, so that the left electrode and the right When the electrode spacing l is between 0.5mm and 1mm, it is significantly higher than the pyroelectric coefficient p when the spacing l is between 0-0.5mm and 1-1.5mm. It is preferable that when the spacing l is between 0.5mm-1mm, The pyroelectric coefficient is large, and the polarization of the left and right electrodes is relatively complete. Referring to Figure 4 again, the abscissa is still the interval l, the left ordinate represents the capacitance of the sensitive element, the right ordinate represents the dielectric loss, and the square dot coordinates in Figure 4 represent the capacitance of the sensitive element, and the dot coordinates represent the dielectric loss. It is also obvious from Fig. 4 that when the distance l is 0.5mm, the capacitance of the sensitive element is only about 200pF, and the dielectric loss is about 5×10-4, which is other values such as 0.1 compared to the distance l. For the embodiments of mm, 1.0 mm, and 1.5 mm, the product of the capacitance of the sensitive element and the dielectric loss is the smallest, that is, the dielectric noise is the smallest. Therefore, it is most preferable that the distance between the left electrode and the right electrode is 0.5 mm.
一实施例中，上电极的结构呈圆形，而左电极和右电极呈矩形，且左电极和右电极的大小相同。上述配置下，上表面无需引出上电极，可全部用于吸收红外光，增加了红外光的吸收效率，且在热释电系数保持不变的情况下，降低了敏感元的电容，极大地缩短了设置有该敏感元芯片的探测器的响应时间。更优选地，矩形左右电极的间距恒等，即矩形左右电极的一条边平行，或是左右电极以圆形上电极的一条直径为对称轴对称，规则、对称的结构可保证极化效果，也方便装配制造。In one embodiment, the structure of the upper electrode is circular, the left electrode and the right electrode are rectangular, and the size of the left electrode and the right electrode are the same. Under the above configuration, the upper surface does not need to lead out the upper electrode, it can be used to absorb infrared light, which increases the absorption efficiency of infrared light, and while the pyroelectric coefficient remains unchanged, the capacitance of the sensitive element is reduced and the capacitance is greatly shortened. The response time of the detector equipped with the sensitive element chip is determined. More preferably, the distance between the left and right electrodes of the rectangle is constant, that is, one side of the left and right electrodes of the rectangle is parallel, or the left and right electrodes are symmetrical with the diameter of the circular upper electrode as the symmetry axis. The regular and symmetrical structure can ensure the polarization effect. Convenient for assembly and manufacturing.
参阅图5及图6，分别为本发明与现有技术不同电极结构下响应率对比 和比探测率对比的示意图。首先参阅图5，横坐标表示频率f，纵坐标表示响应率Rv，其中方点坐标表示现有技术中传统电极结构的响应率Rv，而圆点坐标表示本发明中分布式电极结构下的响应率Rv，可明显看出，在频率f相同的情况下，分布式电极结构比现有技术的探测器响应率提高了近4倍。正是由于采用了分割电极结构后，相对介电常数大大降低，带来的效果。再参阅图6，横坐标表示频率f，纵坐标表示比探测率D*，其中方点坐标表示现有技术中传统电机结构的比探测率D*，而圆点坐标表示本发明中分布式电极结构下的比探测率D*，从比探测率来看，采用分布式电极结构的探测器比探测率相比于现有技术传统探测器的比探测率在10Hz处提高了约1.5倍，且随着频率的继续升高，两者比探测率的差越来越大，分布式电极结构下的探测器的比探测率始终保持在较高的水平。正是由于采用了分割的结构后，介电噪声大大降低，带来的效果。Refer to Figures 5 and 6, which are the comparison of the response rates of the present invention and the prior art under different electrode structures. To Schematic diagram of comparison with specific detection rate. First, referring to Figure 5, the abscissa represents the frequency f, the ordinate represents the response rate Rv, the square dot coordinates represent the response rate Rv of the conventional electrode structure in the prior art, and the circle dot coordinates represent the response under the distributed electrode structure of the present invention. It can be clearly seen that, under the same frequency f, the response rate of the distributed electrode structure is nearly 4 times higher than that of the detector in the prior art. It is the effect that the relative dielectric constant is greatly reduced after the split electrode structure is adopted. 6 again, the abscissa represents the frequency f, the ordinate represents the specific detection rate D*, where the square dot coordinates represent the specific detection rate D* of the conventional motor structure in the prior art, and the dot coordinates represent the distributed electrode in the present invention. The specific detection rate D* under the structure, from the perspective of the specific detection rate, the specific detection rate of the detector with the distributed electrode structure is about 1.5 times higher than that of the conventional detector in the prior art at 10 Hz, and As the frequency continues to increase, the difference in the ratio detection rate between the two becomes larger and larger, and the specific detection rate of the detector under the distributed electrode structure is always maintained at a higher level. It is precisely because of the adoption of the divided structure that the dielectric noise is greatly reduced, which brings about the effect.
应当注意的是，本发明的实施例有较佳的实施性，且并非对本发明作任何形式的限制，任何熟悉该领域的技术人员可能利用上述揭示的技术内容变更或修饰为等同的有效实施例，但凡未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何修改或等同变化及修饰，均仍属于本发明技术方案的范围内。 It should be noted that the embodiments of the present invention have better implementation and do not limit the present invention in any form. Any person skilled in the art may use the technical content disclosed above to change or modify equivalent effective embodiments. However, any modification or equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of the technical solution of the present invention. To

Claims (6)

  1. 一种灵敏元芯片，包括一个或多个热释电弛豫铁电单晶敏感元；A sensitive element chip including one or more pyroelectric relaxation ferroelectric single crystal sensitive elements;
    所述热释电弛豫铁电单晶敏感元的上下表面分别设有电极，其特征在于：The upper and lower surfaces of the pyroelectric relaxation ferroelectric single crystal sensitive element are respectively provided with electrodes, which are characterized in that:
    设于所述上表面的上电极为单电极，设于所述下表面的下电极包括互相分离的左电极及右电极，所述左电极和右电极互不连通将所述下电极成型为一分割电极。The upper electrode provided on the upper surface is a single electrode, the lower electrode provided on the lower surface includes a left electrode and a right electrode that are separated from each other, and the left electrode and the right electrode are not connected to each other to form the lower electrode. Split electrode.
  2. 如权利要求1所述的灵敏元芯片，其特征在于，The sensitive element chip of claim 1, wherein:
    所述左电极及右电极的间距为0.5mm-1mm间。The distance between the left electrode and the right electrode is between 0.5 mm and 1 mm.
  3. 如权利要求2所述的灵敏元芯片，其特征在于，The sensitive element chip of claim 2, wherein:
    所述左电极及右电极的间距为0.5mm。The distance between the left electrode and the right electrode is 0.5 mm.
  4. 如权利要求1所述的灵敏元芯片，其特征在于，The sensitive element chip of claim 1, wherein:
    所述上电极呈圆形；所述左电极及右电极呈矩形。The upper electrode is circular; the left electrode and the right electrode are rectangular.
  5. 如权利要求4所述的灵敏元芯片，其特征在于，The sensitive element chip of claim 4, wherein:
    所述矩形左电极及右电极的间距处处相等。The distance between the rectangular left electrode and the right electrode is equal everywhere.
  6. 如权利要求4或5所述的灵敏元芯片，其特征在于，The sensitive element chip according to claim 4 or 5, wherein:
    所述左电极及右电极以所述圆形上电极的一直径对称。 The left electrode and the right electrode are symmetrical with a diameter of the circular upper electrode. To
PCT/CN2015/071793 2014-05-12 2015-01-29 Sensitive element chip WO2015172586A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201410199521.4 2014-05-12
CN201410199521.4A CN103943771A (en) 2014-05-12 2014-05-12 Relaxation ferroelectric monocrystal pyroelectric infrared detector and preparation method thereof
PCT/CN2014/083193 WO2015172434A1 (en) 2014-05-12 2014-07-29 Pyroelectric single crystal sensitive element, preparation method therefor, and pyroelectric infrared detector including pyroelectric single crystal sensitive element
CNPCT/CN/2014/083193 2014-07-29

Publications (1)

Publication Number Publication Date
WO2015172586A1 true WO2015172586A1 (en) 2015-11-19

Family

ID=51191353

Family Applications (8)

Application Number Title Priority Date Filing Date
PCT/CN2014/083193 WO2015172434A1 (en) 2014-05-12 2014-07-29 Pyroelectric single crystal sensitive element, preparation method therefor, and pyroelectric infrared detector including pyroelectric single crystal sensitive element
PCT/CN2015/071792 WO2015172585A1 (en) 2014-05-12 2015-01-29 Pyroelectric relaxor ferroelectric infrared detector
PCT/CN2015/071791 WO2016015462A1 (en) 2014-05-12 2015-01-29 Tetragonal pyroelectric relaxor ferroelectric single crystal material and preparation method therefor
PCT/CN2015/071796 WO2015172589A1 (en) 2014-05-12 2015-01-29 Post-treatment method for pyroelectric relaxor ferroelectric single crystal
PCT/CN2015/071793 WO2015172586A1 (en) 2014-05-12 2015-01-29 Sensitive element chip
PCT/CN2015/071795 WO2015172588A1 (en) 2014-05-12 2015-01-29 Thinning method for pyroelectric relaxor ferroelectric single crystal
PCT/CN2015/071794 WO2015172587A1 (en) 2014-05-12 2015-01-29 Polarisation method for sensitive element chip
PCT/CN2015/071797 WO2015172590A1 (en) 2014-05-12 2015-01-29 Pyroelectric relaxor ferroelectric single crystal infrared detector

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/CN2014/083193 WO2015172434A1 (en) 2014-05-12 2014-07-29 Pyroelectric single crystal sensitive element, preparation method therefor, and pyroelectric infrared detector including pyroelectric single crystal sensitive element
PCT/CN2015/071792 WO2015172585A1 (en) 2014-05-12 2015-01-29 Pyroelectric relaxor ferroelectric infrared detector
PCT/CN2015/071791 WO2016015462A1 (en) 2014-05-12 2015-01-29 Tetragonal pyroelectric relaxor ferroelectric single crystal material and preparation method therefor
PCT/CN2015/071796 WO2015172589A1 (en) 2014-05-12 2015-01-29 Post-treatment method for pyroelectric relaxor ferroelectric single crystal

Family Applications After (3)

Application Number Title Priority Date Filing Date
PCT/CN2015/071795 WO2015172588A1 (en) 2014-05-12 2015-01-29 Thinning method for pyroelectric relaxor ferroelectric single crystal
PCT/CN2015/071794 WO2015172587A1 (en) 2014-05-12 2015-01-29 Polarisation method for sensitive element chip
PCT/CN2015/071797 WO2015172590A1 (en) 2014-05-12 2015-01-29 Pyroelectric relaxor ferroelectric single crystal infrared detector

Country Status (2)

Country Link
CN (1) CN103943771A (en)
WO (8) WO2015172434A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943771A (en) * 2014-05-12 2014-07-23 中国科学院上海硅酸盐研究所 Relaxation ferroelectric monocrystal pyroelectric infrared detector and preparation method thereof
CN104458007A (en) * 2014-12-12 2015-03-25 电子科技大学 Pyroelectric infrared detector
CN104716255A (en) * 2015-03-13 2015-06-17 电子科技大学 Thick film pyroelectric sensitive element and preparation method thereof
CN105390604B (en) * 2015-12-11 2017-12-08 上海德凯仪器有限公司 Pyroelectric sensor manufacture craft
CN106784290B (en) * 2016-11-30 2021-04-20 北立传感器技术（武汉）有限公司 Pyroelectric relaxation single crystal ultrathin sensitive chip and preparation method thereof
CN106768389A (en) * 2017-01-16 2017-05-31 北立传感器技术（武汉）有限公司 One kind is based on current type relaxor ferroelectric monocrystal pyroelectric detector and preparation method thereof
CN107843571A (en) * 2017-10-19 2018-03-27 中国科学院上海硅酸盐研究所 A kind of VOCs monitor control systems based on relaxor ferroelectric monocrystal infrared thermal release electric detector
CN108165255A (en) * 2017-12-27 2018-06-15 哈尔滨工业大学 A kind of all solid state photochromic crystal material laser card and its preparation and application
CN108645521A (en) * 2018-05-09 2018-10-12 东莞传晟光电有限公司 A kind of pyroelectric sensor
WO2019227377A1 (en) * 2018-05-31 2019-12-05 深圳通感微电子有限公司 Pyroelectric sensor
CN108562365A (en) * 2018-05-31 2018-09-21 深圳通感微电子有限公司 A kind of pyroelectric sensor
DE102018122550A1 (en) 2018-09-14 2020-03-19 Schaeffler Technologies AG & Co. KG Torsional vibration damper
CN111900244A (en) * 2020-07-01 2020-11-06 上海烨映电子技术有限公司 Insulating plate heat-carrying electric pile sensor component and manufacturing method thereof
CN115480287A (en) * 2021-06-16 2022-12-16 清华大学 Energy beam detection device and detection method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101043065A (en) * 2006-03-21 2007-09-26 同济大学 Pyroelectric infrared detector and used detecting member
CN101985775A (en) * 2010-11-29 2011-03-16 中国科学院上海硅酸盐研究所 Ternary system relaxation ferroelectric single crystal material and preparation method thereof
JP2013113692A (en) * 2011-11-28 2013-06-10 Murata Mfg Co Ltd Infrared sensor
CN103943771A (en) * 2014-05-12 2014-07-23 中国科学院上海硅酸盐研究所 Relaxation ferroelectric monocrystal pyroelectric infrared detector and preparation method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1027534C (en) * 1991-01-05 1995-02-01 清华大学 Process for improving electromechanical properties of lead system relaxed ferroelectric ceramics
US6495828B1 (en) * 2000-04-17 2002-12-17 The United States Of America As Represented By The Secretary Of The Army Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate
US6890874B1 (en) * 2002-05-06 2005-05-10 Corning Incorporated Electro-optic ceramic material and device
CN100521819C (en) * 2004-10-15 2009-07-29 清华大学 Polarized zone control of silicon-base ferroelectric micro acoustic sensor and method of connecting electrode
CN100429334C (en) * 2004-12-03 2008-10-29 中国科学院上海硅酸盐研究所 Pyroelectric single crystal material of PMN-PT and application thereof
CN101867011B (en) * 2009-04-14 2012-08-22 中国科学院物理研究所 Pyroelectric film material and preparation method thereof
WO2011111309A1 (en) * 2010-03-11 2011-09-15 パナソニック株式会社 Method for measuring temperature using pyroelectric temperature sensor
CN101834227B (en) * 2010-04-27 2011-11-30 中国科学院上海微系统与信息技术研究所 Optimization method of response ratio of one-dimensional T-Hz quantum well photoelectric detector
WO2012021608A2 (en) * 2010-08-10 2012-02-16 Trs Technologies, Inc. Temperature and field stable relaxor-pt piezoelectric single crystals
CN101976697A (en) * 2010-09-17 2011-02-16 中国科学院上海技术物理研究所 Pyroelectric ultraviolet detector with AlGaH absorbing layer
CN102503422B (en) * 2011-11-02 2014-05-07 宁波大学 Titanium-niobium-magnesium-indium acid lead pyroelectric ceramic and preparation method thereof
CN102721658A (en) * 2012-07-05 2012-10-10 昆明斯派特光谱科技有限责任公司 Method for manufacturing pyroelectric spectrum detector
CN102925959A (en) * 2012-10-14 2013-02-13 宁波大学 Novel growth technology of relaxation ferroelectric monocrystal PIMNT (Lead Magnesium/Indium Niobate-Lead Titanate)
CN202885979U (en) * 2012-11-01 2013-04-17 中国科学院上海技术物理研究所 Uncooled pyroelectric linear array focal plane
CN102928089B (en) * 2012-11-01 2014-08-13 中国科学院上海技术物理研究所 Uncooled pyroelectric linear focal plane and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101043065A (en) * 2006-03-21 2007-09-26 同济大学 Pyroelectric infrared detector and used detecting member
CN101985775A (en) * 2010-11-29 2011-03-16 中国科学院上海硅酸盐研究所 Ternary system relaxation ferroelectric single crystal material and preparation method thereof
JP2013113692A (en) * 2011-11-28 2013-06-10 Murata Mfg Co Ltd Infrared sensor
CN103943771A (en) * 2014-05-12 2014-07-23 中国科学院上海硅酸盐研究所 Relaxation ferroelectric monocrystal pyroelectric infrared detector and preparation method thereof

Also Published As

Publication number Publication date
CN103943771A (en) 2014-07-23
WO2016015462A1 (en) 2016-02-04
WO2015172585A1 (en) 2015-11-19
WO2015172589A1 (en) 2015-11-19
WO2015172587A1 (en) 2015-11-19
WO2015172588A1 (en) 2015-11-19
WO2015172434A1 (en) 2015-11-19
WO2015172590A1 (en) 2015-11-19

Similar Documents

Publication Publication Date Title
WO2015172586A1 (en) Sensitive element chip
CN107490437A (en) Infrared ray sensor
WO2015073745A8 (en) Battery
WO2016064134A3 (en) Light emitting device and method of fabricating the same
JP2014238577A5 (en) Display device
Fang et al. Self-powered ultrabroadband photodetector monolithically integrated on a PMN–PT ferroelectric single crystal
WO2012143784A8 (en) Semiconductor device and manufacturing method thereof
JP2014199899A5 (en)
JP2013175715A5 (en) Semiconductor device
JP2013236059A5 (en)
JP2016174144A5 (en)
JP2016015485A5 (en) Imaging apparatus and electronic apparatus
JP2013175718A5 (en)
JP2016167592A5 (en) Semiconductor device, display device, display module and electronic device
Li et al. Scavenging energy sources using ferroelectric materials
CN102832224B (en) Method for thinning wafer
CN202307791U (en) Dry etching bottom electrode and dry etching device
JP2012068627A5 (en) Method for manufacturing semiconductor device
JP2015156477A5 (en) Semiconductor device
JP2016187030A5 (en) Semiconductor device, display device, method for manufacturing semiconductor device, and method for manufacturing display device
CN104458006A (en) Pyroelectric infrared detector sensitive element and manufacturing method thereof
WO2016003523A3 (en) Polar elastomers for high performance electronic and optoelectronic devices
JP2013021308A5 (en) Semiconductor device
JP2012208481A5 (en) Method for manufacturing liquid crystal display device
JP2015022279A5 (en)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15793153

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 02/03/2017)

122 Ep: pct application non-entry in european phase

Ref document number: 15793153

Country of ref document: EP

Kind code of ref document: A1