CN202208774U - Device for increasing oxygen content in monocrystalline silicon crystal bar - Google Patents
Device for increasing oxygen content in monocrystalline silicon crystal bar Download PDFInfo
- Publication number
- CN202208774U CN202208774U CN2011202942470U CN201120294247U CN202208774U CN 202208774 U CN202208774 U CN 202208774U CN 2011202942470 U CN2011202942470 U CN 2011202942470U CN 201120294247 U CN201120294247 U CN 201120294247U CN 202208774 U CN202208774 U CN 202208774U
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- crystal bar
- quartz
- ring
- oxygen content
- quartz ring
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Abstract
The utility model discloses a device for increasing the oxygen content in a monocrystalline silicon crystal bar. The device is characterized by comprising a quartz crucible and a quartz ring, wherein the quartz ring is arranged in the quartz crucible. By arranging the quartz ring in the quartz crucible, the contact area between silicon melted liquid and quartz is enlarged, thereby ensuring that the sufficient quartz is decomposed to provide oxygen to the crystal bar. Even when the silicon melted liquid is reduced, the sufficient oxygen supply can be ensured at the tail of the crystal bar, so that the yield rate of the monocrystalline silicone crystal bar can be improved. By adopting the device, the average value of the oxygen content in the crystal bar can be improved, and the oxygen content at the tail of the crystal bar can be improved. Furthermore, by adopting the quartz ring, the excessively large contact area between the quartz ring and the silicone melted liquid can be avoided and the quartz ring can be avoided floating on the surface, so that the production can be ensured to be smooth.
Description
Technical field
The utility model relates to a kind of device that improves oxygen level in the silicon single crystal crystal bar.
Background technology
Whether a qualified important measurement index is oxygen level and oxygen concn distribution in the crystal bar to the quality of silicon single-crystal crystal bar.In the prior art, in the pulling process of silicon single crystal crystal bar, for controlling monocrystalline resistivity end to end, improve the monocrystalline yield, doping has volatile As, Sb admixture long crystal thermal field will develop toward closed thermal field direction.And enclosed thermal field design makes that the oxygen level in the crystal bar reduces.The reason that oxygen level reduces is, in long brilliant process, the most oxygen in the crystal bar are that the decomposition through quartz crucible provides, and fused silicon contacts with quartz crucible and makes quartz crucible partly decomposed by thermogenesis.Along with the continuous length of crystal bar is long, the molten soup of the silicon in the quartz crucible gradually reduces.After the molten soup of silicon reduces, reduce with the contact area of quartz crucible, it is fewer and feweri that quartz crucible decomposes, and therefore causes crystal bar afterbody oxygen level on the low side.When serious, afterbody oxygen level even can't satisfy request for utilization.
The utility model content
The purpose of the utility model is in order to overcome deficiency of the prior art, a kind of device that improves oxygen level in the silicon single crystal crystal bar to be provided.
For realizing above-mentioned purpose, the utility model is realized through following technical scheme:
Improve the device of oxygen level in the silicon single crystal crystal bar, it is characterized in that comprise quartz crucible and quartz ring, said quartz ring is arranged in the quartz crucible.
Preferably, described quartz ring is arranged at the quartz crucible bottom.
Device in the utility model especially is suitable for the drawing of heavily doped As, Sb silicon single crystal crystal bar.
In the utility model, through in quartz crucible, placing quartz ring, increased molten soup of silicon and quartzy contact area, can guarantee to have enough quartz to be decomposed into crystal bar provides oxygen.Even the molten soup of silicon reduces, can guarantee that still the crystal bar afterbody has enough oxygen supplies, has improved the yield of silicon single crystal crystal bar.Use the device in the utility model, both can improve the MV of oxygen level in the crystal bar, also can improve the oxygen level of crystal bar afterbody.And adopt quartz ring in the utility model, and can avoid the molten soup contact area of quartz ring and silicon excessive and float on the surface, that guarantees to produce carries out smoothly.
Description of drawings
Fig. 1 is the apparatus structure synoptic diagram of oxygen level in the raising silicon single crystal crystal bar in the utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is carried out detailed description:
As shown in Figure 1, the device of oxygen level comprises quartz crucible 1 and quartz ring 2 in the raising silicon single crystal crystal bar.Quartz ring 2 is arranged at the bottom in the quartz crucible 1.
During use,, utilize the crystal bar drawing process to draw to requiring the crystal bar of diameter with polycrystalline silicon raw material fusion in quartz crucible 1.Smelting process and crystal bar drawing process are prior art, repeat no more at this.
When not using quartz ring, 4 cun crystal bar afterbody oxygen levels of drawing are about 10ppm.After increasing quartz ring, draw 4 cun heavily doped Sb silicon single crystal crystal bars, processing parameter and performance test data are respectively shown in table 1 and table 2.Can find out from table 1 and table 2, be provided with and to play the effect that increases the monocrystalline oxygen level behind the quartz ring.The use of quartz ring does not have obvious influence to other performance perameters of monocrystalline crystal bar.The use of quartz ring does not influence monocrystalline B content data.Other crystal pulling technique parameters after quartz ring not being set and quartz ring being set are all identical.
The performance perameter of the heavily doped Sb monocrystalline crystal bar that the device in use the utility model is produced is following:
The scope of resistivity, resistivity radial gradient, boron content, left data are the crystal bar header data, and the right side data are the crystal bar tail data.Oxygen level wherein, 22.3 is the head oxygen level, 12.7 is the afterbody oxygen level.
Bulge test proves, adopts the heavily doped Sb monocrystalline crystal bar of the quartz crucible production of not placing quartz ring, and its afterbody oxygen level MV is 10.6ppm.Under identical thermal field condition, the heavily doped Sb monocrystalline crystal bar afterbody oxygen level MV that uses the device in the utility model to produce is 15.4ppm.
Embodiment in the utility model only is used for the utility model is described, and does not constitute the restriction to the claim scope, and other substituting of being equal in fact that those skilled in that art can expect are all in the utility model protection domain.
Claims (2)
1. improve the device of oxygen level in the silicon single crystal crystal bar, it is characterized in that comprise quartz crucible and quartz ring, said quartz ring is arranged in the quartz crucible.
2. the device of oxygen level is characterized in that in the raising silicon single crystal crystal bar according to claim 1, and described quartz ring is arranged at the quartz crucible bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202942470U CN202208774U (en) | 2011-08-14 | 2011-08-14 | Device for increasing oxygen content in monocrystalline silicon crystal bar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202942470U CN202208774U (en) | 2011-08-14 | 2011-08-14 | Device for increasing oxygen content in monocrystalline silicon crystal bar |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202208774U true CN202208774U (en) | 2012-05-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202942470U Expired - Lifetime CN202208774U (en) | 2011-08-14 | 2011-08-14 | Device for increasing oxygen content in monocrystalline silicon crystal bar |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202208774U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102345154A (en) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | Method and device for improving oxygen content in monocrystalline silicon crystal bar |
-
2011
- 2011-08-14 CN CN2011202942470U patent/CN202208774U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102345154A (en) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | Method and device for improving oxygen content in monocrystalline silicon crystal bar |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 201617 no.558, changta Road, Shihudang Town, Songjiang District, Shanghai Patentee after: Shanghai crystal silicon material Co., Ltd Address before: 201617 No. 500 South noble Road, Shanghai, Songjiang District Patentee before: Shanghai Hejing Silicon Material Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120502 |