CN202175736U - 一种采用直径法控制区熔晶体自动生长系统 - Google Patents
一种采用直径法控制区熔晶体自动生长系统 Download PDFInfo
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- CN202175736U CN202175736U CN 201120264257 CN201120264257U CN202175736U CN 202175736 U CN202175736 U CN 202175736U CN 201120264257 CN201120264257 CN 201120264257 CN 201120264257 U CN201120264257 U CN 201120264257U CN 202175736 U CN202175736 U CN 202175736U
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104372411A (zh) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | 一种用于磷化铟生长的电控系统 |
CN105063744A (zh) * | 2015-07-15 | 2015-11-18 | 包头市山晟新能源有限责任公司 | 硅单晶拉制方法 |
WO2017070827A1 (zh) * | 2015-10-26 | 2017-05-04 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及系统 |
CN107687021A (zh) * | 2016-08-05 | 2018-02-13 | 硅电子股份公司 | 通过区域熔融制备单晶的方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104372411A (zh) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | 一种用于磷化铟生长的电控系统 |
CN105063744A (zh) * | 2015-07-15 | 2015-11-18 | 包头市山晟新能源有限责任公司 | 硅单晶拉制方法 |
WO2017070827A1 (zh) * | 2015-10-26 | 2017-05-04 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及系统 |
CN107002276A (zh) * | 2015-10-26 | 2017-08-01 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及系统 |
CN107002276B (zh) * | 2015-10-26 | 2020-03-20 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及系统 |
CN107687021A (zh) * | 2016-08-05 | 2018-02-13 | 硅电子股份公司 | 通过区域熔融制备单晶的方法 |
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