CN202150488U - 一种用于led晶片的贴装结构 - Google Patents

一种用于led晶片的贴装结构 Download PDF

Info

Publication number
CN202150488U
CN202150488U CN201120251070U CN201120251070U CN202150488U CN 202150488 U CN202150488 U CN 202150488U CN 201120251070 U CN201120251070 U CN 201120251070U CN 201120251070 U CN201120251070 U CN 201120251070U CN 202150488 U CN202150488 U CN 202150488U
Authority
CN
China
Prior art keywords
substrate
led
led wafer
wafer
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201120251070U
Other languages
English (en)
Inventor
吴发模
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201120251070U priority Critical patent/CN202150488U/zh
Application granted granted Critical
Publication of CN202150488U publication Critical patent/CN202150488U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4941—Connecting portions the connecting portions being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

本实用新型涉及一种用于LED晶片的贴装结构，其包括基板、位于所述基板上的LED晶片、将所述LED晶片固定在所述基板上的胶体、及电连接所述LED晶片与所述基板的导线，所述基板上设置有焊盘，所述LED晶片的正极和负极通过两根或多根导线与基板上的焊盘相连。本实用新型可以提高LED晶片的散热效果及工作的可靠性，还可以延长其使用寿命。

Description

一种用于LED晶片的贴装结构
技术领域
本实用新型涉及LED的结构，更具体地说，涉及一种用于LED晶片的贴装结构。
背景技术
LED作为新一代光源，其发展十分迅速，随着LED技术的日渐成熟，LED在显示照明及装饰等领域的应用越来越广。小到单个LED指示灯，数码管；再到LED手电筒，LED路灯；大到大型LED显示屏，LED以其出色的光电效能正逐渐进入人类生产生活的各个领域。LED应用之广泛，使得人们对其性能要求越来越多、越来越高。
在LED晶片的贴装结构中，每个LED晶片通常是通过两个导线与基板相连，一根导线接LED晶片的正极及一个焊盘，另一根导线接LED晶片的负极及一个焊盘。但是在LED密集排布的情况下，该打线结构使LED晶片上会集聚大量热量，从而引起LED发出的光的光效能的衰减，甚至失效。而LED的散热问题一直是影响LED功率提升的瓶颈，且若LED散热效果不好，其会影响LED的光效及使用寿命等。又一方面，在LED串列排布的情况下，一条串列导线中若有一个导线连接不良就会导致整个LED串列的失效，即该打线结构使LED电连接的可靠性不够高。
实用新型内容
本实用新型要解决的技术问题在于，针对现有技术的上述LED晶片的贴装结构的散热效果不够好且可靠性不够高的缺陷，提供一种改进的散热效果较好且可靠性较高的LED晶片的贴装结构。
本实用新型解决其技术问题所采用的技术方案是：一种用于LED晶片的贴装结构，其特征在于，包括基板、位于所述基板上的LED晶片、将所述LED晶片固定在所述基板上的胶体、及电连接所述LED晶片与所述基板的导线，所述基板上设置有焊盘，所述LED晶片的正极和负极通过两根或多根导线与基板上的焊盘相连；当所述晶体上设置有焊盘时，所述胶体为将所述晶体与所述基板进行电连接及固定的导电银胶。
在本实用新型所述的LED晶片的贴装结构中，当所述晶体上设置有焊盘时，所述胶体为将所述晶体与所述基板进行电连接及固定的导电银胶。
 在本实用新型所述的LED晶片的贴装结构中，当所述晶体上没有焊盘时，所述胶体为非导电银胶。
在本实用新型所述的LED晶片的贴装结构中，所述导线为铝线、金线或铜线。
实施本实用新型的LED晶片的贴装结构，具有以下有益效果：其通过在晶片与基板的焊盘上设置两个或多个导线，使LED晶片上的热量可通过更多的导线传递到焊盘，再通过焊盘传到基板上，从而可以改善LED晶片工作过程中的散热效果，延长LED晶片的使用寿命。而且，多个导线使得若有一个失效了，LED晶片依然可以正常工作，大大提高了LED工作的可靠性。
附图说明
下面将结合附图及实施例对本实用新型作进一步说明，附图中：
图1是本实用新型LED晶片的贴装结构的一优选实施例的结构示意图；
图2是图1的俯视图；
图3是本实用新型LED晶片的贴装结构的又一实施例的结构示意图。
具体实施方式
本实用新型通过增加多个导线来连接LED晶片及基板，使LED晶片能更好的散热，且工作更可靠。
本实用新型提供的LED晶片的贴装结构包括基板3、位于基板3上的LED晶片1、将LED晶片1固定在基板3上的胶体4、及电连接LED晶片1与基板3的导线2，基板3上设置有焊盘5，且LED晶片1的正极或负极通过两根或多根导线2与基板3上的焊盘5相连。本实用新型的结构及原理结合下面的实施例进行详细说明。
实施例一：LED晶片上没有设置焊盘。
参见图1及图2，图1是本实用新型LED晶片的贴装结构的一优选实施例的结构示意图，图2是图1的俯视图。本实用新型提供的LED晶片的贴装结构包括用做光源的LED晶片1及用于支撑LED晶片1的基板3。晶片与基板3之间设置有用于将晶片粘接固定在基板3上的胶体4。基板3上设置有焊盘5，LED晶片1的正极通过两个或多个导线2与基板3上的焊盘5相电连接，同时，LED晶片1的负极通过两个或多个导线2与基板3上的另外的焊盘5相电连接。上述正极引出的不同的导线连接在同一个焊盘的不同位置，或连接在不同的焊盘上，同理，负极引出的不同导线连接在同一个焊盘的不同位置处，或连接在不同的焊盘上，其有利于更好的散热。在图1所示的实施例中，LED晶片1的正极和负极分别是采用两个导线2与基板3上的焊盘相连。优选地，每个电极引出的两个或多个导线形成“V”字型。所述胶体4为非导电体，优选地，所述胶体4为非导电银胶，这样，可以避免滴胶时使用导电胶体4且误操作时引起短路。非导电银胶经过高温(例如170)度加热后会凝固，这样就可以将LED晶片1和基板3粘接在一起，这样就方便打上导线2。优选地，所述导线2为铝线或金线或铜线，该导线2既具有良好的导电性，也具有良好的导热性。导线2通过焊线机焊接在LED晶片1及基板3上。
在LED晶片1工作过程中，LED晶片1产生的热量可以通过具有良好的导热性的导线2传递到焊盘5，再通过焊盘5发散传递到基板3上，从而使热量很好的分散开来而提高LED晶片1的散热效果。而且，当其中的某个导线2断路或其它原因引起的连接不良时，LED晶片1可以正常工作。或者在多个LED串列排布时，例如，LED装饰灯通常是采用多个LED串联，如果一条串列中的铝线或金线连接不良，其不会引起整个LED串列的失效，该装饰灯依然可以正常工作，起到装饰作用。
实施例二：LED晶片底部设置有焊盘。
参见图3，其为本实用新型LED晶片的贴装结构的又一实施例的结构示意图。其中，LED晶片1底部带有焊盘。本实施例中LED晶片的贴装结构包括基板3及LED晶片1。基板3与晶片之间设置有胶体4，该胶体4优选为导电银胶，导电银胶既可以将LED晶片1固定在基板3上，还可以充当导线2将两者进行电连接。LED晶片1底部设置的焊盘5连接的为LED晶片1的正极或负极，则LED晶片1剩下的电极再通过两个或多个导线2与基板3上的焊盘5相电连接，所述导线2为铝线或金线或铜线。
综上所述，本实用新型提供的LED晶片的贴装结构具有较好的散热效果及较高的可靠性，其使得在LED密集排布的情况下，可以减少LED晶片上聚集的热量，从而提高LED晶片的光效及其使用寿命，且可以减少LED失效的情况。
以上所述仅为本实用新型的优选实施例，并非因此限制本实用新型的专利范围，凡是利用本实用新型说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本实用新型的专利保护范围内。

Claims (2)

1.一种用于LED晶片的贴装结构，其特征在于，包括基板(3)、位于所述基板(3)上的LED晶片、将所述LED晶片固定在所述基板(3)上的胶体(4)、以及电连接所述LED晶片与所述基板(3)的导线(2)，所述基板(3)上设置有焊盘(5)，所述LED晶片的正极和负极通过两根或多根导线(2)与基板(3)上的焊盘(5)相连；当所述晶体上设置有焊盘时，所述胶体(4)为将所述晶体与所述基板(3)进行电连接及固定的导电银胶。
2.根据权利要求1所述的用于LED晶片的贴装结构，其特征在于，所述导线(2)为铝线、金线或铜线。
CN201120251070U 2011-07-17 2011-07-17 一种用于led晶片的贴装结构 Expired - Fee Related CN202150488U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201120251070U CN202150488U (zh) 2011-07-17 2011-07-17 一种用于led晶片的贴装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201120251070U CN202150488U (zh) 2011-07-17 2011-07-17 一种用于led晶片的贴装结构

Publications (1)

Publication Number Publication Date
CN202150488U true CN202150488U (zh) 2012-02-22

Family

ID=45591540

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201120251070U Expired - Fee Related CN202150488U (zh) 2011-07-17 2011-07-17 一种用于led晶片的贴装结构

Country Status (1)

Country Link
CN (1) CN202150488U (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103366645A (zh) * 2013-03-22 2013-10-23 美的集团武汉制冷设备有限公司 一种发光显示装置
CN103904207A (zh) * 2014-04-04 2014-07-02 利亚德光电股份有限公司 晶片电路
CN104900791A (zh) * 2015-04-09 2015-09-09 苏州君耀光电有限公司 一种led封装结构

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103366645A (zh) * 2013-03-22 2013-10-23 美的集团武汉制冷设备有限公司 一种发光显示装置
CN103904207A (zh) * 2014-04-04 2014-07-02 利亚德光电股份有限公司 晶片电路
JP2017511598A (ja) * 2014-04-04 2017-04-20 レイヤード オプトエレクトロニック カンパニー リミテッド ウェハー回路
EP3128552A4 (en) * 2014-04-04 2018-02-28 Leyard Optoelectronic Co., Ltd Wafer circuit
CN104900791A (zh) * 2015-04-09 2015-09-09 苏州君耀光电有限公司 一种led封装结构

Similar Documents

Publication Publication Date Title
CN101696790A (zh) 一种大功率led散热封装结构
JP7108326B2 (ja) フレキシブルｌｅｄライトバー
CN201149869Y (zh) 一种led封装结构
CN202150488U (zh) 一种用于led晶片的贴装结构
CN205264699U (zh) 高效节能led灯丝
CN201440424U (zh) Led晶片的贴装结构
CN203774366U (zh) 一种立体发光led芯片灯丝及led灯泡
CN202253012U (zh) 一种led模组及照明设备
CN104733602A (zh) 发光二极管之封装结构
CN209418539U (zh) 一种高光效大功率led光源封装结构
CN202140813U (zh) 一种集成封装的led光源
CN203608403U (zh) 一种交流电驱动led灯
CN205919161U (zh) 采用高压无金线白光led芯片的去电源化光电模组
CN203800085U (zh) 一种条形led全周光源
CN102723420B (zh) 一种支架与led灯
CN203746909U (zh) 一种灯丝型led
CN103137824A (zh) 一种白光led器件及其无金线封装方法
CN202839737U (zh) 一种红外cob光源模块
CN214467955U (zh) 一种led灯板结构
CN215771200U (zh) 一种新型热电分离led光源
CN201877427U (zh) 一种集成式大功率led
CN219778909U (zh) 一种螺旋形倒装cob基板
CN203895502U (zh) 一种长条mcob引脚封装结构
CN212178586U (zh) 一种具有恒流功能的led柔性灯带
CN203983275U (zh) 一种能够360°发光的led灯丝光源

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120222

Termination date: 20120717