CN202094126U - High-power transistor for high-voltage high-frequency quick switch - Google Patents
High-power transistor for high-voltage high-frequency quick switch Download PDFInfo
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- CN202094126U CN202094126U CN2011201801070U CN201120180107U CN202094126U CN 202094126 U CN202094126 U CN 202094126U CN 2011201801070 U CN2011201801070 U CN 2011201801070U CN 201120180107 U CN201120180107 U CN 201120180107U CN 202094126 U CN202094126 U CN 202094126U
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Abstract
The utility model relates to a high-power transistor for a high-voltage high-frequency quick switch. The high-power transistor comprises a semi-conductor substrate, and the semi-conductor substrate comprises a first conductive N+ type substrate and a first conductive N- type collecting region; a first base region with a second conductive P type, and a second P-type base region are arranged in the semi-conductor substrate, and the second base region extends into the first conductive N- type collecting region; a first conductive N+ type emitter region is arranged at the upper part in the first base region; an insulating medium layer is covered on the upper surface of the semi-conductor substrate, an emitting electrode metal layer and a base electrode metal layer are arranged on the insulating medium layer, the emitting electrode metal layer is electrically connected with the first conductive N+ type emitter region, and the base electrode metal layer is electrically connected with the first base region and the second base region; and a table-board glassivation region is arranged in the semi-conductor substrate and extends to the joint part between the first conductive N+ type substrate and the first conductive N- type collecting region from the upper surface of the semi-conductor substrate. The high-power transistor provided by the utility model has the advantages of simple structure, high voltage resistance, high switching speed, high characteristic frequency, low use cost, safety and reliability.
Description
Technical field
The utility model relates to a kind of high power transistor, and especially a kind of high power transistor of high voltage high frequency high-speed switch belongs to the technical field of high power transistor.
Background technology
The application of high power transistor has been penetrated into the every field of national economy and national defense construction, is aviation, space flight, train, automobile, communication, computer, consumer electronics, industrial automation and other science and the vital basic components of industrial department.For realizing that the transmission conversion and the Optimal Control of electric energy are provided support, transistorized technological trend is to high voltage, big sense of current development, then more trends towards higher frequency and speed at electronic applications.The high power transistor of high voltage high frequency high-speed switch is because it is with high content of technology, and manufacture difficulty is big, and the product manufacturing technology of the type is still blank at home, must be from developed country's imports such as America and Europe, Japan.Because consider that from the angle of design and processes technology transistorized power is big, then chip area wants big; Transistorized electric current is big, then can design the cover type domain to improve maximum collector current; But high voltage and high frequency are a pair of contradiction: transistor will be accomplished high voltage, and except that the silicon materials monocrystalline that will adopt high resistivity, the structural parameters junction depth in the technology also will have certain depth, and safeguard measure such as table top glassivation in addition; Transistor will be accomplished high-frequency, and then junction depth must be shallow, if junction depth is darker, then frequency does not just increase.Because high voltage and these two parameters of high frequency are conflicting, mutual restriction, general domestic transistor maker man just can only produce high voltage low-frequency power transistor or low-voltage high-frequency power transistor.Present domestic electronic market just has only the high voltage high-frequency power transistor of developed country's productions such as Japan to dominate the market.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of high power transistor of high voltage high frequency high-speed switch is provided, and it is simple in structure, withstand voltage height, and switching speed is fast, the characteristic frequency height, use cost is low, and is safe and reliable.
The technical scheme that provides according to the utility model, the high power transistor of described high voltage high frequency high-speed switch, comprise semiconductor substrate, described semiconductor substrate comprises the first conduction type N+ type substrate that is positioned at the bottom and is positioned at the first conduction type N-type collector region of described first conduction type N+ type substrate top; Second base that corresponding first conduction type N-type collector region top is provided with first base with second conduction type P type and has the second conduction type P type in the described semiconductor substrate, described second base is positioned at the outer ring of first base, first base is in abutting connection with the first conduction type N-type collector region, and second base extends in the first conduction type N-type collector region from the semiconductor substrate upper face; Top in first base is provided with the first conduction type N+ type emitter region; The upper face of semiconductor substrate is coated with insulating medium layer, described insulating medium layer is provided with emitter metal layer and base metal layer, described emitter metal layer is electrically connected with the first conduction type N+ type emitter region, and the base metal layer is electrically connected with P type first base and P type second base; Be provided with table top glassivation district in the semiconductor substrate, described table top glassivation district extends to the joint portion of the first conduction type N+ type substrate and the first conduction type N-type collector region from the upper face of semiconductor substrate, and table top glassivation district surrounds the first conduction type N-type collector region, first base and second base.
The material of described semiconductor substrate comprises silicon.The described first conduction type N+ type substrate, one side links to each other with the first conduction type N-type collector region, and the opposite side surface is coated with metal layer on back.
The material of described back face metalization layer comprises silver.Described emitter metal layer and base metal layer are same manufacturing layer.
The material of described emitter metal layer and base metal layer is aluminium.Described insulating medium layer is a silicon dioxide layer.
Described base metal layer is provided with base terminal, and the emitter metal layer is provided with emitter terminal.Described metal layer on back is provided with collector terminal.The degree of depth of described first base is 12 μ m, and the degree of depth of second base is 24 μ m.
Described " first conduction type " and " second conduction type " are among both, and for the N type semiconductor device, first conduction type refers to the N type, and second conduction type is the P type; For the P type semiconductor device, first conduction type is just in time opposite with the type and the N type semiconductor device of the second conduction type indication.
Advantage of the present utility model: be provided with first base and second base in the semiconductor substrate, the extended distance of second base in semiconductor substrate is greater than the extended distance of first base.The depth as shallow of first base can improve characteristic frequency and reduce switching time; The degree of depth of second base is dark, can reduce the spike puncture and improve withstand voltage.Be provided with table top glassivation district in the semiconductor substrate, described table top glassivation district surrounds first base, second base and the first conduction type N-type collector region, can further reduce spike and puncture, and guarantees that transistor can work in high-tension operating state.The utility model also adopts the cover type domain structure, has improved collector current; Simple in structure, withstand voltage height, switching speed is fast, the characteristic frequency height, use cost is low, and is safe and reliable.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the equivalent schematic of Fig. 1.
Fig. 3 is a process chart of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with concrete drawings and Examples.
As Fig. 1 ~ shown in Figure 2: with the N transistor npn npn is example, and the utility model comprises base metal floor 1, emitter metal floor 2, insulating medium layer 3, table top glassivation district 4, N+ type emitter region 5, P type first base 6, P type second base 7, N-type collector region 8, N+ type substrate 9 and metal layer on back 10.
As shown in Figure 1: described semiconductor substrate comprises N+ type substrate 9 that is positioned at the bottom and the N-type collector region 8 that is positioned at described N+ type substrate 9 tops, and the material of semiconductor substrate is selected the monocrystalline silicon of 50 ~ 60 Ω cm, to reach the high voltage requirement more than the 500V.Semiconductor substrate is by triple N-type collector region 8 and N+ type substrates 9 of diffuseing to form, and N-type collector region 8 and N+ type substrate 9 form the collector region C of triodes jointly.Top corresponding to N-type collector region 8 in the semiconductor substrate is provided with P type first base 6, the outer ring of described P type base 6 is provided with P type second base 7, and described P type first base 6 all extends to the direction of N-type collector region 8 from the upper end face of semiconductor substrate with P type second base 7; And the distance that the distance that P type first base 6 extends is downwards extended less than P type second base 7, P type second base 7 extends in the N- type collector region 8, and 8 of P type second base 7 and N-type collector regions form the arc joint portion; P type first base 6 is in abutting connection with the upper face of N-type collector region 8.When the transistor power of equivalence shown in Figure 2 is 100W, when the Ic electric current is 10A, the extended distance of P type first base 6 is 12 μ m, the extended distance of P type second base 7 is 24 μ m, the setting of P type first base 6 can improve characteristic frequency and reduce switching time, the setting of P type second base 7 can reduce spike and puncture, and improves withstand voltage.P type first base 6 can require to carry out relative set according to transistorized unit for electrical property parameters with the extended distance of P type second base 7.
Top in P type first base 6 is provided with N+ type emitter region 5, and described N+ type emitter region 5 is positioned at the centre of P type first base 6.Be coated with insulating medium layer 3 on the surface on semiconductor substrate top, promptly described insulating medium layer 3 covers the surface of P type first base 6 and P type second base 7 and N+ type emitter region, and insulating medium layer 3 is a silicon dioxide layer.Insulating medium layer 3 is respectively opened a window corresponding to base and emitter region, be used to be provided with emitter metal layer 2 and base metal layer 1, described emitter metal layer 2 is electrically connected with N+ type emitter region 5, and base metal layer 1 is electrically connected with P type first base 6 and P type second base 7.Emitter metal layer 2 is same manufacturing layer with base metal layer 1, and the material of emitter metal layer 2 and base metal layer 1 is aluminium.Form base terminal B on the base metal layer 1, be used to form emitter terminal E on the emitter metal layer 2.The bottom face of semiconductor substrate is coated with metal layer on back 10, described metal layer on back 10 be positioned at N+ type substrate 9 below, metal layer on back 10 is used for and N+ type substrate 9 ohmic contact, forms the collector terminal C of triode on the metal layer on back 10.
For the spike that reduces triode punctures, be provided with table top glassivation district 4 in the semiconductor substrate; Extend to the direction of N+ type substrate 9 corresponding to the surface that covers insulating medium layer 3 from semiconductor substrate in described table top glassivation district 4, and table top glassivation district 4 extends to the joint portion of N+ type substrate 9 and N-type collector region 8; Thereby table top glassivation district 4 surrounds P type first base 6, P type second base 7 and N-type collector region 8, and table top glassivation district 4 contacts with P type first base 6, P type second base 7 and N-type collector region 8.In order to form table top glassivation district 4, need in semiconductor substrate, form the etching groove by technologies such as photoetching, form by in the etching groove, filling glass powder materials such as silicon dioxide, alundum (Al.Shown a transistorized structural representation in the semiconductor substrate among Fig. 1, equivalent structure as shown in Figure 2.
As shown in Figure 3, work flow of the present utility model needs process respectively: monocrystal material preparations, substrate prediffusion/distributions again, abrasive disc/polishing, once full sheet boron diffusion/once oxidation, a photoetching, the diffusion/distribution again of secondary boron selective, secondary photoetching, phosphorous diffusion/distribution again, mesa etch, glassivation, evaporation of aluminum, remove photoresist/alloy, back side sandblast, back face metalization, scribing, chip testing, the sheet that stretches tight, load, bonding, plastic packaging, afterwards curing, deflashing, electrotinning, cut muscle, test, printing, monitoring test, packing and shipment.
In order to improve characteristic frequency, require P type first base 6 shallow, if but tying shallow meeting causes puncture voltage Vceo, Vcbo on the low side with the PN junction of N-type collector region 8.Therefore, in order to reach the characteristic frequency height, the parameter index that puncture voltage Vceo, Vcbo are also high, the utility model has increased once oxidation and photoetching process more after the once full sheet boron diffusion in base, and the base has carried out the diffusion of secondary boron selective again.The structure of P type first base 6 of shallow about 12um is tied in P type second base 7 and the part that have just formed the about 24um of the local junction depth in base after such twice boron diffusion, thereby has realized puncture voltage Vceo〉500V, Vcbo〉800V, frequency equals the electrical property of 15MHz.Because this model is used for Switching Power Supply, be in switch utilization state, just require switching time short.The utility model has improved because of characteristic frequency, thereby has also improved transistorized switching time, has reached ton＜2us, ts＜3us, tf＜1us.
The sample pipe electrical quantity of the utility model product all meets or exceeds design objective, and dissipation power Pc surpasses index 100W, reaches 120W; The characteristic frequency height reaches design objective 15MHZ; Switching speed is fast, and puncture voltage Vceo surpasses 500V.Table one is corresponding test result, in the table one, Pc represents that dissipation power, Ic represent that maximum collector current, Icp represent that maximum surge current, Vebo represent that puncture voltage, Vceo between transistorized emitter and base stage represents that puncture voltage, Vcbo between transistorized collector electrode and emitter represents puncture voltage, the h between transistorized collector electrode and base stage
FE1And h
FE2Represent that transistorized multiplication factor, fT representation feature frequency, ton represent that opening time, ts represent that storage time, tf represent that fall time, Is/b represent the second breakdown electric current.By test result in the table one as can be known, transistor can satisfy the high-frequency instructions for use of high voltage.
Table one
| Parameter | Test condition | Standard | Measured data |
| Pc | 2A*50V | 100W | 2A*60V=120W |
| Ic | ? | 10A | 14A? 13.8A? 13.8A |
| Icp | ? | 20A | 19A 18.8A? 18.8A |
| Vebo | Ie=1mA | >7V | 11.2V? 11.3V? 10.9V |
| Vceo | Ic=10mA | >500V | 526V? 536V? 513V |
| Vcbo | Ic=1mA | >800V | 905V? 939V? 778V |
| h FE1 | Ic=1.2A;Vce=5V | 15-50 | 26 31 33 |
| h FE2 | Ic=6A;Vce=5V | >8 | 21.9? 22.3? 22.4 |
| f T | Ic=1A,Vce=10V | 15MHZ | 15MHZ? 15MHZ? 15MHZ |
| ton | Ic=5A Ib=1A | <2us | 1.80us? 1.85us? 1.86us |
| ts | Ic=5A Ib=1A | <3us | 2.86us? 2.95us? 2.93us |
| tf | Ic=5A Ib=1A | <1us | 0.3us? 0.28us? 0.29us |
| Is/b | Vce=100V(DC) | 0.5A | 0.55A? 0.5A? 0.55A |
| ? | Vce=130V(DC) | 0.3A | 0.35A? 0.35A? 0.35A |
| ? | Vce=150V(DC) | 0.2A | 0.3A? 0.3A? 0.3A |
Be provided with P type first base 6 and P type second base 7 in the utility model semiconductor substrate, P type second extended distance of base 7 in semiconductor substrate is greater than the extended distance of P type first base 6, can improve characteristic frequency and reduce switching time, can reduce spike and puncture, improve withstand voltage; Be provided with table top glassivation district 4 in the semiconductor substrate, described table top glassivation district 4 surrounds P type first base 6, P type second base 7 and N-type collector region 8, can further reduce spike and puncture, and guarantees that transistor can work in high-tension operating state; Adopt the cover type domain structure, improved collector current; Simple in structure, withstand voltage height, switching speed is fast, the characteristic frequency height, use cost is low, and is safe and reliable.
Claims (10)
1. the high power transistor of a high voltage high frequency high-speed switch, comprise semiconductor substrate, described semiconductor substrate comprises the first conduction type N+ type substrate that is positioned at the bottom and is positioned at the first conduction type N-type collector region of described first conduction type N+ type substrate top; It is characterized in that: second base that corresponding first conduction type N-type collector region top is provided with first base with second conduction type P type and has the second conduction type P type in the described semiconductor substrate, described second base is positioned at the outer ring of first base, first base is in abutting connection with the first conduction type N-type collector region, and second base extends in the first conduction type N-type collector region from the semiconductor substrate upper face; Top in first base is provided with the first conduction type N+ type emitter region; The upper face of semiconductor substrate is coated with insulating medium layer, described insulating medium layer is provided with emitter metal layer and base metal layer, described emitter metal layer is electrically connected with the first conduction type N+ type emitter region, and the base metal layer is electrically connected with P type first base and P type second base; Be provided with table top glassivation district in the semiconductor substrate, described table top glassivation district extends to the joint portion of the first conduction type N+ type substrate and the first conduction type N-type collector region from the upper face of semiconductor substrate, and table top glassivation district surrounds the first conduction type N-type collector region, first base and second base.
2. according to the high power transistor of the described high voltage high frequency of claim 1 high-speed switch, it is characterized in that: the material of described semiconductor substrate comprises silicon.
3. according to the high power transistor of the described high voltage high frequency of claim 1 high-speed switch, it is characterized in that: the described first conduction type N+ type substrate, one side links to each other with the first conduction type N-type collector region, and the opposite side surface is coated with metal layer on back.
4. according to the high power transistor of the described high voltage high frequency of claim 3 high-speed switch, it is characterized in that: the material of described back face metalization layer comprises silver.
5. according to the high power transistor of the described high voltage high frequency of claim 1 high-speed switch, it is characterized in that: described emitter metal layer and base metal layer are same manufacturing layer.
6. according to the high power transistor of the described high voltage high frequency of claim 5 high-speed switch, it is characterized in that: the material of described emitter metal layer and base metal layer is aluminium.
7. according to the high power transistor of the described high voltage high frequency of claim 1 high-speed switch, it is characterized in that: described insulating medium layer is a silicon dioxide layer.
8. according to the high power transistor of the described high voltage high frequency of claim 1 high-speed switch, it is characterized in that: described base metal layer is provided with base terminal, and the emitter metal layer is provided with emitter terminal.
9. according to the high power transistor of the described high voltage high frequency of claim 3 high-speed switch, it is characterized in that: described metal layer on back is provided with collector terminal.
10. according to the high power transistor of the described high voltage high frequency of claim 1 high-speed switch, it is characterized in that: the degree of depth of described first base is 12 μ m, and the degree of depth of second base is 24 μ m.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011201801070U CN202094126U (en) | 2011-05-31 | 2011-05-31 | High-power transistor for high-voltage high-frequency quick switch |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011201801070U CN202094126U (en) | 2011-05-31 | 2011-05-31 | High-power transistor for high-voltage high-frequency quick switch |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505341A (en) * | 2014-12-18 | 2015-04-08 | 常熟市聚芯半导体科技有限公司 | Manufacturing method of semiconductor discharge tube |
| CN114999914A (en) * | 2022-07-01 | 2022-09-02 | 锦州辽晶电子科技有限公司 | Manufacturing method of power transistor for improving secondary breakdown resistance tolerance |
-
2011
- 2011-05-31 CN CN2011201801070U patent/CN202094126U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505341A (en) * | 2014-12-18 | 2015-04-08 | 常熟市聚芯半导体科技有限公司 | Manufacturing method of semiconductor discharge tube |
| CN104505341B (en) * | 2014-12-18 | 2017-06-06 | 常熟市聚芯半导体科技有限公司 | A kind of manufacture method of semiconductor discharge tube |
| CN114999914A (en) * | 2022-07-01 | 2022-09-02 | 锦州辽晶电子科技有限公司 | Manufacturing method of power transistor for improving secondary breakdown resistance tolerance |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111228 Termination date: 20170531 |
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| CF01 | Termination of patent right due to non-payment of annual fee |