CN201966204U - Radiator for high-power semiconductor device - Google Patents
Radiator for high-power semiconductor device Download PDFInfo
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- CN201966204U CN201966204U CN2011200308495U CN201120030849U CN201966204U CN 201966204 U CN201966204 U CN 201966204U CN 2011200308495 U CN2011200308495 U CN 2011200308495U CN 201120030849 U CN201120030849 U CN 201120030849U CN 201966204 U CN201966204 U CN 201966204U
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- soaking plate
- semiconductor device
- power semiconductor
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- shaped heat
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Abstract
The utility model discloses a radiator for a high-power semiconductor device, which comprises a vapour chamber and a radiating component fixed on the vapour chamber, wherein the radiating component comprises a plurality of U-shaped heat exchange tubes and radiating fins; lower-end pins of the U-shaped heat exchange tubes are fixed on the vapour chamber; upper-end pins of the U-shaped heat exchange tubes are arranged on each radiating fin in a penetrating manner; the U-shaped heat exchange tubes are mounted on the vapour chamber and the radiating fins from inside to outside in a scattered way to form an integrated horn-shaped structure, wherein the lower-end pins are densely arranged and the upper-end pins are dispersedly arranged. As the structure is adopted, the radiator can effectively and rapidly transfer the heat of the high-power semiconductor device out; moreover, the radiator can rapidly radiate the heat into air with smallest volume and largest radiating area, therefore, the junction temperature of the high-power semiconductor device can be effectively controlled in a smaller stable value, thus effectively prolonging the service life of the high-power semiconductor device. Moreover, the radiator also has the advantages of light weight, good safety, broad application scope, etc.
Description
Technical field
The utility model relates to a kind of heat abstractor, particularly a kind of large power semiconductor device heat abstractor.
Background technology
The heat abstractor of domestic existing large power semiconductor device (as: semiconductor device such as IGBT, SCR, LED) adopts simple aluminium alloy extrusions heat abstractor usually, and its structure generally adopts band fin section bar aluminium to design its area of dissipation and hold heat (energy storage body) by heat radiation power, and by adjusting the heat radiation occasion that its volume and tab construction are suitable for various power.Yet, owing to be subjected to the influence of aluminum alloy material heat conductivility deficiency, the shortcoming that this heat abstractor exists is: 1, only being applicable to the occasion that the thermal source distribution area is bigger, as the heat-dissipating casing of matrix LED street lamp, is exactly to adopt a plurality of power devices to distribute to reduce on the concentrated device of heat in addition; 2, for the relatively more concentrated large power semiconductor device of heating, must strengthen the energy storage body (promptly thicken and strengthen entire radiator) of heat abstractor, so just increased the volume and weight of heat abstractor greatly, also between thermal source and heat abstractor, increase large-area copper coin in case of necessity and carry out quick conductive heat distribution, not only cause the heat abstractor heaviness, and increased cost, if the heat abstractor of this heaviness is used on the high-power LED lamp, the weight of LED light fixture can very big (100W be about more than 15 kilograms), if it hangs over 8-20 rice high-altitude, dangerous just increase, especially run into typhoon, earthquakes etc. all may produce accident, if be used in large power, electrically source device (as: frequency converter, uninterrupted power supplys etc.) on, same serious its weight that increases is installed floor and is also wanted specific (special) requirements.At the problems referred to above, a kind of heat sinking device that is specifically designed on the large power semiconductor device has appearred in the prior art, this heat abstractor by the U-shaped heat exchanger tube, wherein the radiating fin on the pin and the soaking plate that is set on another pin of U-shaped heat exchanger tube are formed to be set in the U-shaped heat exchanger tube.Yet, the U-shaped heat exchanger tube of this heat abstractor is to be installed in equably on soaking plate and the radiating fin, that is to say, centre distance between the adjacent two U-shaped heat exchanger tubes all equates arbitrarily, the setting of this structure, limit the area of dissipation of heat abstractor to a great extent, thereby caused it can't reach best radiating effect.
Summary of the invention
The purpose of this utility model is the problem and shortage at above-mentioned existence, provides a kind of design ingenious, and heat conduction and radiating rate are fast, the large power semiconductor device heat abstractor of good heat dissipation effect.
The technical solution of the utility model is achieved in that
Large power semiconductor device heat abstractor described in the utility model, comprise soaking plate and be fixed on radiating subassembly on the soaking plate, wherein said radiating subassembly comprises plurality of U-shaped heat exchanger tube and radiating fin, the lower end pin of described each U-shaped heat exchanger tube is fixed on the soaking plate, the upper pipes pin is set on each radiating fin, be characterized in described each U-shaped heat exchanger tube by interior scattering outward be installed in and form pin the arrange structure of the whole flare shape intensive, that the upper end pin is arranged dispersion in lower end on soaking plate and each radiating fin.
Wherein, above-mentioned soaking plate comprises that soaking plate reaches soaking plate down, described upward soaking plate reaches down and is respectively arranged with some clamp groove on the soaking plate, the centre distance of adjacent two clamp groove is dwindled toward interior gradually by outer on the wherein same soaking plate, and the lower end pin of above-mentioned each U-shaped heat exchanger tube is interposed in describedly goes up soaking plate and down between the clamp groove of soaking plate.
In order to improve the transmission efficiency of heat further, be respectively arranged with the some polings hole and the fixing hole of a side band bulge loop on above-mentioned each radiating fin, the centre distance in adjacent two poling holes equates on the wherein same radiating fin, the upper end pin of above-mentioned each U-shaped heat exchanger tube is set in respectively in described each poling hole, has placed stationary pipes in described each fixing hole.
To contact well between U-shaped heat exchanger tube and the soaking plate in order making, to be beneficial to the transmission of heat, be connected by heat-conducting silicone grease between the lower end pin of above-mentioned clamp groove and U-shaped heat exchanger tube.
Better for the heat-conducting effect that makes the U-shaped heat exchanger tube, be provided with the capillary network structure in above-mentioned each U-shaped heat exchanger tube.
In order to make radiating effect of the present utility model better, be provided with two groups of radiating subassemblies on the above-mentioned soaking plate symmetrically.
Not only fast but also evenly for the transmission that makes heat, and make things convenient for the installation of large power semiconductor device, above-mentioned soaking plate adopts the extruding aluminium alloy material to form.
The utility model is owing to adopt dexterously each U-shaped heat exchanger tube is installed in by interior scattering outward ground and form the lower end pin on soaking plate and each radiating fin and arrange intensive, the arrange structure of the whole flare shape that disperses of upper end pin, heat abstractor can be effectively promptly conducted the heat of large power semiconductor device, and be heat to be dispersed in the air with the volume of minimum and the area of dissipation of maximum, radiating rate is fast, the junction temperature that has guaranteed large power semiconductor device can be controlled in the lower stationary value effectively, made problem that the large power semiconductor device temperature constantly rises with regard to not producing like this because of heat conduction and radiating rate cause heat localization inadequately, and the temperature difference of large power semiconductor device and any position of heat abstractor can both be controlled within 1-3 ℃, thereby increased the useful life of large power semiconductor device effectively.And the U-shaped heat exchanger tube of entire heat dissipation device all adopts copper pipe, radiating fin all adopts flake aluminum, on the weight than the light 70%-80% of aluminium section bar heat abstractor of identical radiating effect, thereby alleviated the weight of entire heat dissipation device greatly, solved difficulty is installed, installed a series of problems such as danger.That the utility model also has is simple and reliable for structure, security performance reaches advantages such as applied range well.
Below in conjunction with accompanying drawing the utility model is further described.
Description of drawings
Fig. 1 is a perspective view of the present utility model.
Fig. 2 is a side structure schematic diagram of the present utility model.
Fig. 3 is a cross-sectional view of the present utility model.
Fig. 4 is the cross-sectional view of the utility model U-shaped heat exchanger tube.
Fig. 5 is the side structure schematic diagram of the utility model soaking plate.
Fig. 6 is the side structure schematic diagram of the utility model radiating fin.
Embodiment
As Fig. 1-shown in Figure 6, large power semiconductor device heat abstractor described in the utility model, comprise soaking plate 1 and be fixed on radiating subassembly 2 on the soaking plate 1, wherein said radiating subassembly 2 comprises plurality of U-shaped heat exchanger tube 21 and radiating fin 22, the lower end pin of described each U-shaped heat exchanger tube 21 is fixed on the soaking plate 1, the upper pipes pin is set on each radiating fin 22, for the utility model can be dispersed into the heat that large power semiconductor device 5 produces in the air apace with the volume of minimum and maximum area of dissipation, described each U-shaped heat exchanger tube 21 is installed in by interior scattering outward ground and forms the lower end pin on soaking plate 1 and each radiating fin 22 and arrange intensive, the arrange structure of the whole flare shape that disperses of upper end pin.Wherein, above-mentioned soaking plate 1 comprises that soaking plate 11 reaches soaking plate 12 down, described upward soaking plate 11 reaches down and is respectively arranged with some clamp groove 13 on the soaking plate 12, the centre distance of adjacent two clamp groove 13 is dwindled toward interior gradually by outer on the wherein same soaking plate, the lower end pin of above-mentioned each U-shaped heat exchanger tube 21 is interposed between the clamp groove 13 of described last soaking plate 11 and following soaking plate 12, and large power semiconductor device 5 is installed in down on the bottom surface of soaking plate 12, links together by screw and go up soaking plate 11 and following soaking plate 12.To contact well between U-shaped heat exchanger tube 21 and the soaking plate 1 in order making, to be beneficial to the transmission of heat, be connected by heat-conducting silicone grease between the lower end pin of above-mentioned clamp groove 13 and U-shaped heat exchanger tube 21.In order to improve the transmission efficiency of heat further, be respectively arranged with the some polings hole 221 and the fixing hole 222 of a side band bulge loop 223 on above-mentioned each radiating fin 22, the centre distance in adjacent two poling holes 221 equates on the wherein same radiating fin 22, the upper end pin of above-mentioned each U-shaped heat exchanger tube 21 is set in respectively in described each poling hole 221, has placed stationary pipes 4 in described each fixing hole 222.Wherein, the length that bulge loop 223 protrudes is 2mm～3mm, and closely contacts with U-shaped heat exchanger tube 21 pipe shafts, thereby has increased the contact area of radiating fin 22 with U-shaped heat exchanger tube 21, helps the transmission of heat.For the heat-conducting effect that makes U-shaped heat exchanger tube 21 better, be provided with capillary network structure 3 in above-mentioned each U-shaped heat exchanger tube 21, and whole U-shaped heat exchanger tube 21 is special copper tube, because the diameter of copper tube is 8mm, wall thickness is 0.3mm～0.5mm, and by special process copper powders may being sintered to the copper tube inwall, to form thickness be capillary network structure 3 about 0.1mm, therefore, not only in light weight, and heat conductivility is superior.In order to make radiating effect of the present utility model better, be provided with two groups of radiating subassemblies 2 on the above-mentioned soaking plate 1 symmetrically.Not only fast but also evenly for the transmission that makes heat, and make things convenient for the installation of large power semiconductor device 5, above-mentioned soaking plate 1 adopts the extruding aluminium alloy material to form.And it is the aluminum alloy materials punch forming of 0.3mm～0.5mm that above-mentioned each radiating fin 22 adopts thickness, and for the utility model, radiating fin 22 is installed manyly more, and radiating effect is just good more.
The utility model is described by embodiment, but the utility model is not construed as limiting, with reference to description of the present utility model, other variations of the disclosed embodiments, expect easily that as professional person such variation should belong within the utility model claim restricted portion for this area.
Claims (8)
1. large power semiconductor device heat abstractor, comprise soaking plate (1) and be fixed on radiating subassembly (2) on the soaking plate (1), wherein said radiating subassembly (2) comprises plurality of U-shaped heat exchanger tube (21) and radiating fin (22), the lower end pin of described each U-shaped heat exchanger tube (21) is fixed on the soaking plate (1), the upper pipes pin is set on each radiating fin (22), it is characterized in that described each U-shaped heat exchanger tube (21) by interior scattering outward be installed in soaking plate (1) and each radiating fin (22) and go up and form the lower end pin and arrange intensive, the arrange structure of the whole flare shape that disperses of upper end pin.
2. according to the described large power semiconductor device heat abstractor of claim 1, it is characterized in that above-mentioned soaking plate (1) comprises that soaking plate (11) reaches soaking plate (12) down, described upward soaking plate (11) reaches down and is respectively arranged with some clamp groove (13) on the soaking plate (12), the centre distance of adjacent two clamp groove (13) is dwindled toward interior gradually by outer on the wherein same soaking plate, and the lower end pin of above-mentioned each U-shaped heat exchanger tube (21) is interposed in describedly goes up soaking plate (11) and down between the clamp groove (13) of soaking plate (12).
3. according to the described large power semiconductor device heat abstractor of claim 2, it is characterized in that being connected by heat-conducting silicone grease between the lower end pin of above-mentioned clamp groove (13) and U-shaped heat exchanger tube (21).
4. according to the described large power semiconductor device heat abstractor of claim 1, it is characterized in that being respectively arranged with on above-mentioned each radiating fin (22) the some polings hole (221) and the fixing hole (222) of a side band bulge loop (223), the centre distance in the last adjacent two poling holes (221) of wherein same radiating fin (22) equates, the upper end pin of above-mentioned each U-shaped heat exchanger tube (21) is set in respectively in described each poling hole (221), has placed stationary pipes (4) in described each fixing hole (222).
5. according to the described large power semiconductor device heat abstractor of claim 1, it is characterized in that being provided with capillary network structure (3) in above-mentioned each U-shaped heat exchanger tube (21).
6. according to the described large power semiconductor device heat abstractor of claim 1, it is characterized in that being provided with symmetrically on the above-mentioned soaking plate (1) two groups of radiating subassemblies (2).
7. according to claim 1 or 2 described large power semiconductor device heat abstractors, it is characterized in that above-mentioned soaking plate (1) adopts the extruding aluminium alloy material to form.
8. according to the described large power semiconductor device heat abstractor of claim 1, it is characterized in that above-mentioned each radiating fin (22) adopts the aluminum alloy materials punch forming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200308495U CN201966204U (en) | 2011-01-29 | 2011-01-29 | Radiator for high-power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200308495U CN201966204U (en) | 2011-01-29 | 2011-01-29 | Radiator for high-power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201966204U true CN201966204U (en) | 2011-09-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200308495U Expired - Fee Related CN201966204U (en) | 2011-01-29 | 2011-01-29 | Radiator for high-power semiconductor device |
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| CN (1) | CN201966204U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107172854A (en) * | 2017-05-17 | 2017-09-15 | 南京林业大学 | Vehicle-mounted integrated controller cooling system based on plate-fin heat pipe radiator |
| CN108370653A (en) * | 2015-11-04 | 2018-08-03 | 普瑞有限公司 | A kind of vehicle electric power electronic building brick |
| CN109104843A (en) * | 2017-06-21 | 2018-12-28 | 鸿富锦精密工业(武汉)有限公司 | Heat radiation module |
| CN114743939A (en) * | 2022-04-12 | 2022-07-12 | 上海晶岳电子有限公司 | MOS tube assembly and assembly device thereof |
-
2011
- 2011-01-29 CN CN2011200308495U patent/CN201966204U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108370653A (en) * | 2015-11-04 | 2018-08-03 | 普瑞有限公司 | A kind of vehicle electric power electronic building brick |
| CN108370653B (en) * | 2015-11-04 | 2020-05-12 | 普瑞有限公司 | Automobile power electronic assembly |
| CN107172854A (en) * | 2017-05-17 | 2017-09-15 | 南京林业大学 | Vehicle-mounted integrated controller cooling system based on plate-fin heat pipe radiator |
| CN107172854B (en) * | 2017-05-17 | 2019-04-02 | 南京林业大学 | Vehicle-mounted integrated controller cooling system based on plate-fin heat pipe radiator |
| CN109104843A (en) * | 2017-06-21 | 2018-12-28 | 鸿富锦精密工业(武汉)有限公司 | Heat radiation module |
| CN114743939A (en) * | 2022-04-12 | 2022-07-12 | 上海晶岳电子有限公司 | MOS tube assembly and assembly device thereof |
| CN114743939B (en) * | 2022-04-12 | 2023-08-29 | 上海晶岳电子有限公司 | MOS pipe assembly and assembly device thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110907 Termination date: 20130129 |
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| CF01 | Termination of patent right due to non-payment of annual fee |