CN201936885U - RF transverse diffusion P-type MOS tube - Google Patents
RF transverse diffusion P-type MOS tube Download PDFInfo
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- CN201936885U CN201936885U CN2011200113073U CN201120011307U CN201936885U CN 201936885 U CN201936885 U CN 201936885U CN 2011200113073 U CN2011200113073 U CN 2011200113073U CN 201120011307 U CN201120011307 U CN 201120011307U CN 201936885 U CN201936885 U CN 201936885U
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Abstract
The embodiment of the utility model discloses an RF (Radio Frequency) transverse diffusion P-type MOS (Metal Oxide Semiconductor) tube. The RF transverse diffusion P-type MOS tube comprises a substrate and an epilayer, wherein a drift region, as well as a drain region and a channel which are respectively connected with two sides of the drift region, is formed in the epilayer; a field oxidation layer covering the drift region is formed outside the surface of the drift region; and a shallow channel isolated oxidation layer region is formed at the inner upper part of the drift region and connected with the field oxidation layer. In the utility model, as the shallow channel isolated oxidation layer region is arranged in the drift region, the effective length of the drift region can be increased by about two times of the thickness of the shallow channel isolated oxidation layer region, which ensures that the breakdown voltage of the RF transverse diffusion P-type MOS tube is effectively improved. Therefore, the RF transverse diffusion P-type MOS tube has longer service life and wider application range.
Description
Technical field:
The utility model relates to the semiconductor device processing technology field, relates in particular to a kind of radio frequency transverse diffusion p-type metal-oxide-semiconductor.
Background technology:
Owing to have advantages such as high power gain, high efficiency and low cost, radio frequency transverse diffusion p-type metal-oxide-semiconductor (metal oxide semiconductor field effect tube) is widely used in fields such as mobile communication base station, radar, navigation.In order to increase the puncture voltage of radio frequency transverse diffusion p-type metal-oxide-semiconductor, in such device epitaxial layers, the light dope drift region is set usually, because the existence of light dope drift region causes such device to have higher conducting resistance near the position, drain region.
In order further to improve the puncture voltage of radio frequency transverse diffusion p-type metal-oxide-semiconductor, increase its power output, usually adopt the doping content that increases light dope drift region length and reduce the light dope drift region, therefore cause such break-over of device resistance further to increase, and then caused device power consumption increase, efficient to reduce.In order to take into account the performance requirement of radio frequency transverse diffusion p-type metal-oxide-semiconductor simultaneously, adopt the field plate technology to reach balance between puncture voltage and the conducting resistance usually to high-breakdown-voltage and low on-resistance.
As shown in Figure 1, the structural representation for radio frequency transverse diffusion p-type metal-oxide-semiconductor in the prior art comprises: P type substrate 10; Be formed at the N type epitaxial loayer 11 on the substrate 10; Be formed at the N type sinker area (sinker district) 12 in the epitaxial loayer 11; Be formed at the P type light dope drift region 14 in the epitaxial loayer 11; Be formed in the epitaxial loayer 11 and be positioned at the P type drain region 15 and the N type raceway groove 13 at 14 two ends, drift region; Be formed in the epitaxial loayer 11 and be positioned at the P type source region 16 adjacent with N type raceway groove 13; Be formed at the grid oxide layer 171 on N type raceway groove 13 surfaces; Be formed at the polysilicon layer 17 on grid oxide layer 171 surfaces; Be formed at the oxide layer 172 on polysilicon layer 17 and 14 surfaces, drift region; Be formed at the metal electrode (drain electrode) 19 in the P type leakage 15.Simultaneously,, reduce the peak electric field at PN junction place between drift region 14 and the N type raceway groove 13, increase the puncture voltage of this device, also be formed with metal field pole plate 18 on the surface of field oxide 172 in order further to improve the Electric Field Distribution of 14 inside, drift region.
Yet in the above-mentioned prior art, adopt the puncture voltage of the radio frequency transverse diffusion p-type metal-oxide-semiconductor of field plate technology to be improved, but the raising degree is limited, still can't satisfy in some application-specific scenes the requirement of its voltage endurance capability, limit the working life and the range of application of radio frequency transverse diffusion p-type metal-oxide-semiconductor.
The utility model content
For solving the problems of the technologies described above, the purpose of this utility model is to provide a kind of radio frequency transverse diffusion p-type metal-oxide-semiconductor, further to improve the puncture voltage of radio frequency transverse diffusion p-type metal-oxide-semiconductor on the basis of existing technology, by improving its voltage endurance capability, realize improving its working life, and enlarge its range of application.
For this reason, the utility model embodiment provides following technical scheme:
A kind of radio frequency transverse diffusion p-type metal-oxide-semiconductor comprises:
Substrate and epitaxial loayer;
Be formed with drift region and the drain region and the raceway groove that are connected with both sides, described drift region respectively in the described epitaxial loayer;
The surface topography of described drift region becomes to have the field oxide that covers described drift region;
Top in the described drift region is formed with shallow-trench isolation oxide layer district, and described shallow-trench isolation oxide layer district is connected with described field oxide.
Preferably, described shallow trench isolating oxide layer district comprises the first oxide layer district and the second oxide layer district;
The described first oxide layer district is connected with described field oxide;
The described second oxide layer district is positioned at the central region of below, the described first oxide layer district, and the scope in the second oxide layer district is less than the first oxide layer district, and the edge in the first oxide layer district and the second oxide layer district is stepped.
Preferably, the shallow trench isolating oxide layer district that obtains for deposited oxide layer in the shallow trench that in described drift region, forms, described shallow trench isolating oxide layer district.
Preferably, described shallow trench comprises ground floor shallow trench and second layer shallow trench;
Described second layer shallow trench is positioned at the central region of described ground floor shallow trench below, and the scope of second layer shallow trench is less than the ground floor shallow trench, and the edge of ground floor shallow trench and second layer shallow trench is stepped.
Preferably, the thickness in the described first oxide layer district and the second oxide layer district is 0.14 μ m～0.16 μ m.
Preferably, described channel surface is formed with gate oxide, polysilicon gate, field oxide and metal field pole plate successively.
Preferably, described metal field pole plate is the aluminium field plate, forms by depositing metal aluminium lamination, etching.
Preferably, described raceway groove is a N type gradual change raceway groove, and doping content is 1 * 10
16Cm
-3To 1 * 10
18Cm
-3
Compared with prior art, technique scheme has the following advantages:
In the radio frequency transverse diffusion p-type metal-oxide-semiconductor that the utility model embodiment is provided, shallow trench isolating oxide layer district by the insulation that in the drift region, is provided with, the effective length of drift region is increased about the twice of shallow trench isolating oxide layer district thickness, therefore can effectively improve the puncture voltage of radio frequency transverse diffusion p-type metal-oxide-semiconductor, therefore as can be known, radio frequency transverse diffusion p-type metal-oxide-semiconductor in the present embodiment has higher voltage endurance capability, has higher working life and bigger range of application.
In addition, formed a plurality of peak electric field in the drift region of this device, can reduce the accumulation degree of drift region near raceway groove one end, make the Electric Field Distribution of drift region more smooth, therefore can improve the drift region doping content, reduce its conducting resistance, thereby reduce the power consumption of device.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of radio frequency transverse diffusion p-type metal-oxide-semiconductor of the prior art;
The structural representation of the radio frequency transverse diffusion p-type metal-oxide-semiconductor that Fig. 2 provides for the utility model;
Fig. 3 is the puncture voltage of the radio frequency transverse diffusion p-type metal-oxide-semiconductor of present embodiment and prior art schematic diagram relatively for what the utility model provided;
The radio frequency transverse diffusion p-type metal-oxide-semiconductor manufacture process schematic diagram that Fig. 4～Fig. 7 provides for the utility model.
Embodiment
Just as described in the background section, the existing radio frequency transverse diffusion p-type metal-oxide-semiconductor voltage endurance capability of field plate technology that adopts is limited, can't satisfy the demand in some application-specific scenes, has limited the working life and the range of application of radio frequency transverse diffusion p-type metal-oxide-semiconductor.
On the basis based on above-mentioned research, the utility model embodiment provides a kind of radio frequency transverse diffusion p-type metal-oxide-semiconductor, comprising: substrate and epitaxial loayer; Be formed with drift region and the drain region and the raceway groove that are connected with both sides, described drift region respectively in the described epitaxial loayer; The surface topography of described drift region becomes to have the field oxide that covers described drift region; Top in the described drift region is formed with shallow trench isolating oxide layer district, and described shallow trench isolating oxide layer district is connected with described field oxide.
The technical scheme that the utility model embodiment is provided, the puncture voltage of described radio frequency transverse diffusion p-type metal-oxide-semiconductor has increased more than 1/10th than the puncture voltage of prior art, therefore as can be known, radio frequency transverse diffusion p-type metal-oxide-semiconductor in the present embodiment has higher voltage endurance capability, has higher working life and bigger range of application.
It more than is the application's core concept, below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
A lot of details have been set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of the utility model intension, so the utility model is not subjected to the restriction of following public specific embodiment.
Secondly, the utility model is described in detail in conjunction with schematic diagram, when the utility model embodiment is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of the utility model protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Embodiment one:
Present embodiment provides a kind of radio frequency transverse diffusion p-type metal-oxide-semiconductor, as shown in Figure 2, is its a kind of structural representation, and this device comprises:
Substrate 20 and epitaxial loayer 21; Wherein, the described substrate doped N-type substrate of can attaching most importance to, concentration can be 1 * 10
19Cm
-3, thickness can be 4 μ m.Described epitaxial loayer 21 is a N type epitaxial loayer, is formed on the described substrate 20 its crystal orientation and is＜100 〉, doping content can be 1 * 10
14Cm
-3, thickness can be 4 μ m.
Be formed with drift region 24 and the drain region 25 and the raceway groove 23 that are connected with both sides, described drift 24 district respectively in the described epitaxial loayer 21; Described drift region 24 is P type drift region, and by forming at epitaxial loayer 21 implanted dopant boron, its doping content can be 2 * 10
17Cm
-3Described raceway groove 23 can be N type gradual change raceway groove, and by forming at epitaxial loayer 21 implanted dopant phosphorus, doping content can be 1 * 10
16Cm
-3Described drain region 25 is by forming at epitaxial loayer 21 implanted dopant boron, and its doping content can be 1 * 10
20Cm
-3
The surface topography of described drift region 24 becomes to have the field oxide 273 that covers described drift region; The thickness of described field oxide 273 can be 0.13 μ m.
Top in the described drift region 24 is formed with shallow trench isolating oxide layer district 241, and described shallow trench isolating oxide layer district 241 is connected with described field oxide 273.Shallow trench isolating oxide layer district 241 is formed in the space that drift region 24 and field oxide surround, and there is certain spacing distance in drain region 25 with shallow trench isolating oxide layer district 241, does not connect mutually; Also there is certain spacing distance in described raceway groove 23 with shallow-trench isolation oxide layer district 241, does not connect mutually.
In the above-mentioned radio frequency transverse diffusion p-type metal-oxide-semiconductor, shallow trench isolating oxide layer district by the insulation that in the drift region, is provided with, the effective length of drift region is increased about the twice of shallow-trench isolation oxide layer district thickness, therefore can effectively improve the puncture voltage of radio frequency transverse diffusion p-type metal-oxide-semiconductor.Simultaneously, in the drift region, formed a plurality of peak electric field, can reduce the accumulation degree of drift region near raceway groove one end, make the Electric Field Distribution of drift region more smooth, therefore can improve the drift region doping content, reduce its conducting resistance, thereby reduce the power consumption of device.
In order further to improve the effective length of radio frequency transverse diffusion p-type metal-oxide-semiconductor drift region, in the such scheme, described shallow-trench isolation oxide layer district can be step structure, referring to shown in Figure 2, described shallow-trench isolation oxide layer district 241 specifically can comprise the first oxide layer district 241a and the second oxide layer district 241b;
The described first oxide layer district 241a is connected with described field oxide 273;
The described second oxide layer district 241b is positioned at the central region of described first oxide layer district 241a below, and the scope of the second oxide layer district 241b is less than the first oxide layer district 241a, and the edge of the first oxide layer district 241a and the second oxide layer district 241b is stepped.
The above-mentioned first oxide layer district 241a is identical with the thickness of the second oxide layer district 241b, between 0.14 μ m～0.16 μ m, is example with 0.15 preferable μ m, and this structure can make the effective length of drift region increase by 0.30 μ m.
The described first oxide layer district 241a and the second oxide layer district 241b can be formed in the shallow trench in the drift region 24, described shallow trench correspondence can comprise ground floor shallow trench and second layer shallow trench, described second layer shallow trench is positioned at the central region of described ground floor shallow trench below, and the scope of second layer shallow trench is less than the ground floor shallow trench, and the edge of ground floor shallow trench and second layer shallow trench is stepped.Described ground floor shallow trench and second layer shallow trench are by STI (Shallow Trench Isolation, shallow trench isolation from) technology forms, than traditional LOCOS technology, STI technology can avoid producing beak effect, makes the Electric Field Distribution of drift region more smooth.
Certainly, in order further to improve the effective length of radio frequency transverse diffusion p-type metal-oxide-semiconductor drift region, above-mentioned shallow-trench isolation oxide layer district can also comprise the structure more than two-layer shallow trench, its implementation can with two-layer shallow trench cross-references, repeat no more.
In the radio frequency transverse diffusion p-type metal-oxide-semiconductor as shown in Figure 2, also comprise the N type sinker area (sinker district) 22 that is formed in the epitaxial loayer 21, by forming at epitaxial loayer 21 implanted dopant phosphorus, its doping content can be 5 * 10
19Cm
-3Described raceway groove comprises gate oxide 271 on 23 surfaces successively, polysilicon gate 27, field oxide 272 and metal field pole plate 28.The thickness of described gate oxide 271 can be 0.02 μ m; The thickness of described polysilicon gate 27 can be 0.2 μ m, and wherein can be injected with concentration is 5 * 10
19Cm
-3Boron impurities; Described field oxide 272 covers the both sides and the surface of described polysilicon gate 27, and the thickness of field oxide 272 can be 0.13 μ m; The material of described metal field pole plate 28 can be aluminium, covers the surface of N type sinker area 22, source region 26, field oxide 272, and metal field pole plate 28 and drain electrode 29 can form by the etching aluminium lamination, and drain electrode 29 covers the surface in drain region 25.25 and 26 are respectively drain region and source region shown in Fig. 2, and by forming at epitaxial loayer 21 implanted dopant boron, its doping content can be 1 * 10
20Cm
-3
As shown in Figure 3, the puncture voltage of the radio frequency transverse diffusion p-type metal-oxide-semiconductor that provides for present embodiment and prior art is schematic diagram relatively, and wherein grid, source electrode and underlayer voltage are equal to GND (0V), drain voltage V
DSBegin to increase gradually from 0V.As shown in Figure 3, the puncture voltage of the radio frequency transverse diffusion p-type metal-oxide-semiconductor that present embodiment provides has increased more than 1/10th than the puncture voltage of prior art, therefore as can be known, radio frequency transverse diffusion p-type metal-oxide-semiconductor in the present embodiment has higher voltage endurance capability, has higher working life and bigger range of application.
Be example with two-layer shallow ditch groove structure below, the manufacture process of the radio frequency transverse diffusion p-type metal-oxide-semiconductor that the utility model is provided is described in detail, and its concrete technological process is as follows:
(1): preparation heavy doping N type substrate, doping content is 1 * 10
19Cm
-3, thickness is 4 μ m.
(2): growth N type epitaxial loayer on N type substrate, crystal orientation＜100 〉, doping content is 1 * 10
14Cm
-3, thickness is 4 μ m.
(3): implanted dopant phosphorus (P) in N type epitaxial loayer, form N type sinker area (sinker district), concentration is 5 * 10
19Cm
-3
(4): implanted dopant phosphorus (P) in N type epitaxial loayer, form N type gradual change raceway groove, doping content is 1 * 10
16Cm
-3To 1 * 10
18Cm
-3
(5): implanted dopant boron (B) in N type epitaxial loayer, form P type drift region, doping content is 2 * 10
17Cm
-3
(6): carry out N type gradual change raceway groove and P type drift region the diffusion, 1000 ℃ of diffusion temperatures, diffusion time 100min (N
2Under the environment).
(7): twice etching is carried out with wet etching (HF etching solution) technology in the top in P type drift region, form ground floor shallow trench and second layer shallow trench respectively, described second layer shallow trench is positioned at the central region of described ground floor shallow trench below, and the scope of second layer shallow trench is less than the ground floor shallow trench, and the edge of ground floor shallow trench and second layer shallow trench is stepped.The thickness of ground floor shallow trench and second layer shallow trench can be 0.14um～0.16um, and preferable can be 0.15 μ m.After shallow trench forms, deposited oxide layer, and etching removal shallow trench forms stair-stepping shallow trench isolating oxide layer with the unnecessary oxide layer of exterior domain.
(8): adopt xeothermic oxidation growth technology to form gate oxide, the thickness of described gate oxide can be 0.02 μ m.
(9): at device surface deposit polysilicon, thickness 0.2 μ m, and to polysilicon layer implanted dopant boron (B), doping content can be 5 * 10
19Cm
-3, etching is removed above the N type gradual change raceway groove and unnecessary polysilicon layer beyond the two side portions, forms polysilicon gate.
(10): carry out P type source respectively and leak injection, implanted dopant boron (B), doping content can be 1 * 10
20Cm
-3
(11): adopt damp and hot oxidation growth technology, form field oxide at device surface, described field oxide is connected with ladder trench isolations oxide layer, and covers the both sides and the surface of polysilicon gate, and its thickness can be 0.13 μ m.
(12): etch away and reach unnecessary field oxide beyond the both sides above the polysilicon gate, keep the field oxide on shallow trench isolating oxide layer surface simultaneously.
(13): at device surface depositing metal aluminium (Al), remove N type sinker area, source region, field oxide and drain region aluminium lamination in addition, form metal field pole plate and drain electrode by etching.
Extremely shown in Figure 7 referring to Fig. 4, schematic diagram for described radio frequency transverse diffusion p-type metal-oxide-semiconductor forming process, wherein Fig. 4 is the device architecture schematic diagram behind the formation ground floor shallow trench, Fig. 5 is the device architecture schematic diagram behind the stair-stepping shallow trench isolating oxide layer of formation, Fig. 6 is for forming the device architecture schematic diagram behind the field oxide, and Fig. 7 is the structural representation of the radio frequency transverse diffusion p-type metal-oxide-semiconductor that finally obtains.Among above-mentioned Fig. 4 to Fig. 7,22 is N type sinker area, and 23 is N type gradual change raceway groove, 24 is P type drift region, and 241a is the ground floor shallow trench, and 241b is a second layer shallow trench, 25 is the drain region, 26 is the source region, and 27 is polysilicon gate, and 271 is gate oxide, 272 is the field oxide on the both sides and the surface of polysilicon gate, 273 is the field oxide on shallow trench isolating oxide layer surface, and 28 is the metal field pole plate, and 29 is drain electrode.
In the radio frequency transverse diffusion p-type metal-oxide-semiconductor that present embodiment provides, shallow trench isolating oxide layer district by the insulation that in the drift region, is provided with, the effective length of drift region is increased about the twice of shallow trench isolating oxide layer district thickness, therefore can effectively improve the puncture voltage of radio frequency transverse diffusion p-type metal-oxide-semiconductor.Simultaneously, in the drift region, formed a plurality of peak electric field, can reduce the accumulation degree of drift region near raceway groove one end, make the Electric Field Distribution of drift region more smooth, therefore can improve the drift region doping content, reduce its conducting resistance, thereby reduce the power consumption of device.In addition, described shallow trench forms by STI (Shallow Trench Isolation, shallow trench isolation from) technology, and than traditional LOCOS technology, STI technology can avoid producing beak effect, makes the Electric Field Distribution of drift region more smooth.
In the technical scheme that the utility model provides, the puncture voltage of described radio frequency transverse diffusion p-type metal-oxide-semiconductor has increased more than 1/10th than the puncture voltage of prior art, therefore as can be known, radio frequency transverse diffusion p-type metal-oxide-semiconductor in the present embodiment has higher voltage endurance capability, has higher working life and bigger range of application.
Various piece adopts the mode of going forward one by one to describe in this specification, and what each part stressed all is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from spirit or scope of the present utility model in other embodiments.Therefore, the utility model will can not be restricted to embodiment illustrated herein, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (8)
1. a radio frequency transverse diffusion p-type metal-oxide-semiconductor is characterized in that, comprising:
Substrate and epitaxial loayer;
Be formed with drift region and the drain region and the raceway groove that are connected with both sides, described drift region respectively in the described epitaxial loayer;
The surface topography of described drift region becomes to have the field oxide that covers described drift region;
Top in the described drift region is formed with shallow-trench isolation oxide layer district, and described shallow-trench isolation oxide layer district is connected with described field oxide.
2. radio frequency transverse diffusion p-type metal-oxide-semiconductor according to claim 1 is characterized in that:
Described shallow trench isolating oxide layer district comprises the first oxide layer district and the second oxide layer district;
The described first oxide layer district is connected with described field oxide;
The described second oxide layer district is positioned at the central region of below, the described first oxide layer district, and the scope in the second oxide layer district is less than the first oxide layer district, and the edge in the first oxide layer district and the second oxide layer district is stepped.
3. radio frequency transverse diffusion p-type metal-oxide-semiconductor according to claim 1 and 2 is characterized in that:
The shallow trench isolating oxide layer district that described shallow trench isolating oxide layer district obtains for deposited oxide layer in the shallow trench that forms in described drift region.
4. radio frequency transverse diffusion p-type metal-oxide-semiconductor according to claim 3 is characterized in that:
Described shallow trench comprises ground floor shallow trench and second layer shallow trench;
Described second layer shallow trench is positioned at the central region of described ground floor shallow trench below, and the scope of second layer shallow trench is less than the ground floor shallow trench, and the edge of ground floor shallow trench and second layer shallow trench is stepped.
5. radio frequency transverse diffusion p-type metal-oxide-semiconductor according to claim 2 is characterized in that:
The thickness in the described first oxide layer district and the second oxide layer district is 0.14 μ m～0.16 μ m.
6. radio frequency transverse diffusion p-type metal-oxide-semiconductor according to claim 1 is characterized in that:
Described channel surface is formed with gate oxide, polysilicon gate, field oxide and metal field pole plate successively.
7. radio frequency transverse diffusion p-type metal-oxide-semiconductor according to claim 6 is characterized in that:
Described metal field pole plate is the aluminium field plate, forms by depositing metal aluminium lamination, etching.
8. radio frequency transverse diffusion p-type metal-oxide-semiconductor according to claim 1 is characterized in that:
Described raceway groove is a N type gradual change raceway groove, and doping content is 1 * 10
16Cm
-3To 1 * 10
18Cm
-3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200113073U CN201936885U (en) | 2011-01-14 | 2011-01-14 | RF transverse diffusion P-type MOS tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200113073U CN201936885U (en) | 2011-01-14 | 2011-01-14 | RF transverse diffusion P-type MOS tube |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263125A (en) * | 2011-08-24 | 2011-11-30 | 苏州市职业大学 | Power MOS (metal oxide semiconductor) component for transversely diffusing metallic oxides |
| CN102593171A (en) * | 2011-01-14 | 2012-07-18 | 苏州英诺迅科技有限公司 | RF (Radio Frequency) lateral diffusion P-type MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof |
-
2011
- 2011-01-14 CN CN2011200113073U patent/CN201936885U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593171A (en) * | 2011-01-14 | 2012-07-18 | 苏州英诺迅科技有限公司 | RF (Radio Frequency) lateral diffusion P-type MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof |
| CN102263125A (en) * | 2011-08-24 | 2011-11-30 | 苏州市职业大学 | Power MOS (metal oxide semiconductor) component for transversely diffusing metallic oxides |
| CN102263125B (en) * | 2011-08-24 | 2013-04-03 | 苏州市职业大学 | Power MOS (metal oxide semiconductor) component for transversely diffusing metallic oxides |
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