CN201773168U - Thermal resistance tester of semiconductor power device - Google Patents
Thermal resistance tester of semiconductor power device Download PDFInfo
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- CN201773168U CN201773168U CN 201020521051 CN201020521051U CN201773168U CN 201773168 U CN201773168 U CN 201773168U CN 201020521051 CN201020521051 CN 201020521051 CN 201020521051 U CN201020521051 U CN 201020521051U CN 201773168 U CN201773168 U CN 201773168U
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Abstract
The utility model discloses a thermal resistance tester of a semiconductor power device, which solves the technical problem that a single thermal resistance tester can only measure the thermal resistance of single type of device. The technical scheme adopted is that: a circuit structure comprises a CPU with a supporting management program, a thermal resistance test circuit and a thermal resistance test parameter sampling circuit, and the circuit structure of the thermal resistance tester is additionally provided with a plug-in interface circuit and a switch changeover circuit. The thermal resistance tester has the key point that, the plug-in interface circuit and the switch changeover circuit are additionally arranged in the thermal resistance tester, the type of a device to be tested is identified by the plug-in interface circuit, test is performed by the fact that corresponding test sub-circuits are changed over by the switch changeover circuit to be connected with test pin terminals of the device to be tested, thus single thermal resistance tester can perform thermal resistance test on different types of devices, further saving test cost.
Description
Technical field
The utility model relates to a kind of thermo-resistance measurement instrument of semiconductor power device, belongs to the semiconductor power device thermo-resistance measurement instrument of performance of semiconductor device field tests, particularly a kind of multifunctional all.
Background technology
The thermal resistance of power semiconductor device is the important indicator of device performance parameter, and thermal resistance has reflected the heat-sinking capability of device.Mainly with thermal resistance form performance, thermal resistance is defined as follows the power device thermal reliability: the physics definition of thermal resistance is the ratio of the thermal power transmitted on the temperature difference that forms on the direction of heat flow and this path.Its computing formula is:
θ
AB＝(T
A-T
B)/P
AB
For semiconductor devices, T
AThe junction temperature that generally is chip is T
j, T
BFor the reference point temperature,, can be the skin temperature T of encapsulation according to test request
cOr environment temperature T
a
To power device, the most frequently used thermal resistance is to tie the thermal resistance θ of package casing
JC:
θ
jC＝(T
j-T
c)/P
H
P in the following formula
HHeating power for measured device.
The PN junction of semiconductor devices is under the effect of forward constant biasing, and its junction temperature and forward bias are linear corresponding relation substantially, generally is about-0.5 ℃/mV, and this value K is the thermal calibration coefficient, i.e. the temperature coefficient of temperature-sensitive parameter voltage.The thermal sensitive parameter voltage variety of device multiply by its thermal calibration coefficient and promptly gets its variations injunction temperature.Comparatively detailed to method of testing regulation in the standard.Therefore, apply certain heating power to device, can determine the variation of junction temperature before and after the device heats by the variable quantity of PN junction forward voltage in the device, can extrapolate the device thermal resistance divided by heating power, the thermal resistance calculation formula is:
θ
jC＝K·ΔV
m/P
H(℃/W)
In the formula, V
mBe thermal sensitive parameter voltage, P
HBe heating power.
Because PN junction forward voltage varies over temperature under constant biasing is linear substantially.Its thermal calibration coefficient can be tried to achieve with the following method:
Utilize the control of thermostatic control platform and measure tested case temperature, get 2 thermal sensitive parameter voltages and corresponding base temperature at low temperature and high temperature side respectively.Utilize the thermal sensitive parameter PN junction forward voltage difference and the temperature difference to try to achieve temperature coefficient:
K=Δ T/ Δ V
M (T)Unit is ℃/mV
So θ
JC=Δ T Δ V
m/ (Δ V
M (T)P
H)
In the prior art, the thermo-resistance measurement instrument of the semiconductor power device that adopts can only carry out independent thermo-resistance measurement to discrete devices such as diode, bipolar transistor and field effect transistor respectively, can not satisfy the demand that the thermal resistance instrument is tested all discrete devices that adopts, so just increased testing cost, and many thermal resistance instrument carry inconvenience, at this problem, need improve thermo-resistance measurement instrument circuit structure.
Summary of the invention
The utility model is for solving device thermal resistance testing cost height that causes and the technical matters of carrying inconvenience that can only measure single type owing to the thermo-resistance measurement instrument, designed a kind of thermo-resistance measurement instrument of semiconductor power device, by in the thermo-resistance measurement instrument, setting up card i/f circuit and conversion switch, make separate unit thermo-resistance measurement instrument can realize dissimilar power semiconductor devices is carried out thermo-resistance measurement.
The utility model for realizing the technical scheme that goal of the invention adopts is, a kind of thermo-resistance measurement instrument of semiconductor power device, comprise the CPU that has the supporting management program in the circuit structure, be provided with the test constant current source, the heating constant current source, the thermo-resistance measurement circuit in heating voltage source, and the thermo-resistance measurement parameter acquisition circuit of gathering measured device terminal voltage and shell temperature, set up the card i/f circuit and the conversion switch that connect measured device in the circuit structure of above-mentioned thermo-resistance measurement instrument, CPU gathers the measured device pinout information by the coding circuit in the card i/f circuit (4), output control signals to the controlled end of conversion switch after the decoding computing, conversion switch will be tested constant current source respectively by the contact adhesive of relay, the test lead of measured device is inserted in heating constant current source or heating voltage source.
Key of the present utility model is, by in the thermo-resistance measurement instrument, setting up the conversion switch of each electronic circuit in card i/f circuit and the thermo-resistance measurement circuit, by card i/f circuit identification measured device type, switching corresponding test electronic circuit access measured device test pin end by conversion switch tests, realized that separate unit thermo-resistance measurement instrument can carry out thermo-resistance measurement to various types of devices, the utility model removes can test diode, outside bipolar transistor and the MOSFET, can also test circuit of three-terminal voltage-stabilizing integrated, expand the type that to survey device greatly, saved testing cost.
Below in conjunction with accompanying drawing the utility model is elaborated.
Description of drawings
Fig. 1 is a schematic block circuit diagram of the present utility model.
Fig. 2 is a specific embodiment of the utility model repeat circuit executive circuit.
Fig. 3 is card i/f circuit theory diagrams in the utility model.
Among the figure, 1 represents CPU, and 2 represent the thermo-resistance measurement circuit, 3 representative test thermal resistance parameters Acquisition Circuit, 4 represent the card i/f circuit, and 5 represent measured device, 6 representation switch change-over circuits, 2-1 representative test constant current source, 2-2 representative heating constant current source, 2-3 represents the heating voltage source, and on behalf of resistance, D1, R1, R2, R3, R4 represent diode, Q1 represents transistor, and K represents relay.
Embodiment
Referring to Fig. 1, a kind of thermo-resistance measurement instrument of semiconductor power device, comprise the CPU1 that has the supporting management program in the circuit structure, be provided with test constant current source 2-1, heating constant current source 2-2, the thermo-resistance measurement circuit 2 of heating voltage source 2-3, and the thermo-resistance measurement parameter acquisition circuit 3 of gathering measured device 5 terminal voltages and shell temperature, set up the card i/f circuit 4 and the conversion switch 6 that connect measured device in the circuit structure of above-mentioned thermo-resistance measurement instrument, CPU1 gathers measured device 1 pinout information by the coding circuit in the card i/f circuit 4, output control signals to the controlled end of conversion switch 6 after the decoding computing, conversion switch 6 will be tested constant current source 2-1 respectively by the contact adhesive of relay, heating constant current source 2-2 or heating voltage source 2-3 insert the test lead of measured device 5.
The current amplification circuit that above-mentioned conversion switch 6 is made up of triode Q1, relay K and supporting resistive element, the base stage of triode Q1 receives the control signal that CPU1 sends, collector is connected on working power end by the coil of relay K, and the contact adhesive of relay K will be tested the test lead of constant current source 2-1, heating constant current source 2-2, heating voltage source 2-3 access measured device 5 respectively.
Coding circuit in the above-mentioned card i/f circuit 4 is one group of parallel resistance R1, R2, R3 of being connected on measured device 5 each leads ends, and CPU1 gathers the voltage and the analyzing and processing at resistance R 1, R2, R3 two ends by the voltage acquisition end.
When measuring the thermal resistance of semiconductor power device, according to the thermal resistance calculation formula, at first need to determine the temperature coefficient K of thermal sensitive parameter voltage, when applying heating power, the forward bias of device changes calculates variations injunction temperature.
A specific embodiment of the present utility model, bipolar transistor is inserted the thermo-resistance measurement instrument as measured device 5 by corresponding card i/f circuit 4, CPU1 gathers measured device 5 pinout informations by the coding circuit in the card i/f circuit 4, output control signals to conversion switch 6 after the decoding computing, test constant current source 2-1 is inserted the test lead of measured device 5, the emitter junction of bidirectional bipolar transistor injects the test constant current, and record its forward bias and temperature, then, start heating constant current source 2-2 and heating voltage source 2-3, in this heating cycle, transistor adds thermal recovery common base mode, applies heating voltage at collector, applies heating current at emitter.After applying certain power, the tube core heating after removing heating and the time-delay by a period of time, applies the test constant current once more to emitter junction, and the forward bias of measuring this moment calculates the temperature difference.According to thermal resistance calculation formula θ
JC=Δ T Δ V
m/ (Δ V
M (T)P
H) record the thermal resistance of bipolar transistor.
The utility model is measured an embodiment of circuit of three-terminal voltage-stabilizing integrated.Circuit of three-terminal voltage-stabilizing integrated mainly comprises the fixing output of three ends and two kinds of circuit of the adjustable output of three ends, wherein three ends fixedly output circuit comprise: 7,900 two series of malleation 7800 and negative pressure, two serial output voltages have a plurality of steppings such as 5V, 6V, 8V, 9V, 12V, 15V, 18V, 24V respectively; The adjustable output circuit of three ends comprises: 13,7/2,37/,337 two series of malleation 117/217/317 and negative pressure.This type of circuit has three function ends to be respectively: input end, output terminal and adjustment end.This thermal resistance instrument can be surveyed above-mentioned all circuit of three-terminal voltage-stabilizing integrated.
With 7800 circuit of three-terminal voltage-stabilizing integrated is example, and test philosophy is as follows: in measured device input heating cycle termination heating voltage source, and output termination heating constant current source, its heating voltage is the poor of input voltage and output voltage.The responsive to temperature knot is between input and output terminal.The committed step of whole test is:
Input end grounding was adjusted end and was promptly held unsettledly over the ground measuring period, and measured device is applied measuring current I
M, measure the forward and backward responsive to temperature junction voltage of heating.
Adjust end ground connection heating cycle, input end, output terminal are connected heating voltage source and heating constant current source respectively, apply heating voltage, heating current, to tested circuit of three-terminal voltage-stabilizing integrated heating.
Claims (3)
1. the thermo-resistance measurement instrument of a semiconductor power device, comprise the CPU (1) that has the supporting management program in the circuit structure, be provided with test constant current source (2-1), heating constant current source (2-2), the thermo-resistance measurement circuit (2) in heating voltage source (2-3), and the thermo-resistance measurement parameter acquisition circuit (3) of gathering measured device (5) terminal voltage and shell temperature, it is characterized in that: set up the card i/f circuit (4) and the conversion switch (6) that connect measured device in the circuit structure of described thermo-resistance measurement instrument, CPU (1) gathers measured device (5) pinout information by the coding circuit in the card i/f circuit (4), output control signals to the controlled end of conversion switch (6) after the decoding computing, conversion switch (6) will be tested constant current source (2-1) respectively by the contact adhesive of relay, heating constant current source (2-2) or heating voltage source (2-3) insert the test lead of measured device (5).
2. the thermo-resistance measurement instrument of a kind of semiconductor power device according to claim 1, it is characterized in that: the current amplification circuit that described conversion switch (6) is made up of triode (Q1), relay (K) and supporting resistive element, the base stage of triode (Q1) receives the control signal that CPU (1) sends, collector is connected on working power end by the coil of relay (K), and the contact adhesive of relay (K) will be tested the test lead of constant current source (2-1), heating constant current source (2-2), heating voltage source (2-3) access measured device (5) respectively.
3. the thermo-resistance measurement instrument of a kind of semiconductor power device according to claim 1, it is characterized in that: the coding circuit in the described card i/f circuit (4) is one group of parallel resistance (R1, R2, R3) that is connected on each leads ends of measured device (5), and CPU (1) gathers the voltage and the analyzing and processing at resistance (R1, R2, R3) two ends by the voltage acquisition end.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020521051 CN201773168U (en) | 2010-09-08 | 2010-09-08 | Thermal resistance tester of semiconductor power device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020521051 CN201773168U (en) | 2010-09-08 | 2010-09-08 | Thermal resistance tester of semiconductor power device |
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| CN201773168U true CN201773168U (en) | 2011-03-23 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102288841A (en) * | 2011-04-27 | 2011-12-21 | 株洲南车时代电气股份有限公司 | Plug-in unit identification system and method of common testing interface |
| CN102749152A (en) * | 2012-07-27 | 2012-10-24 | 北京市科通电子继电器总厂 | Method and apparatus for measuring junction temperature based on MOSFET (metal-oxide-semiconductor field-effect transistor) |
| CN103048606A (en) * | 2012-12-30 | 2013-04-17 | 杭州士兰微电子股份有限公司 | Thermal resistance test device and method of semiconductor power device |
| CN103076551A (en) * | 2013-01-01 | 2013-05-01 | 北京工业大学 | Thermal resistance composition test device and method for LED (light emitting diode) lamp |
| CN103792476A (en) * | 2014-01-17 | 2014-05-14 | 中国空间技术研究院 | Thermal resistance measuring method for semiconductor device |
| CN104297658A (en) * | 2014-10-24 | 2015-01-21 | 工业和信息化部电子第五研究所 | Device, method and testing plate for testing thermal resistance of metal-oxide-semiconductor field-effect transistor |
| CN104764990A (en) * | 2015-04-02 | 2015-07-08 | 泰州海天半导体有限公司 | Device and method for online testing thermal resistance in chip mounting process |
| CN105572559A (en) * | 2016-03-09 | 2016-05-11 | 西安后羿半导体科技有限公司 | Power MOSFET packaging thermal resistance comparison device |
| CN108828383A (en) * | 2018-08-13 | 2018-11-16 | 深圳市亚派光电器件有限公司 | Photoelectric cell test macro and method |
| CN110045259A (en) * | 2019-03-28 | 2019-07-23 | 武汉市毅联升科技有限公司 | A kind of LD-TO device aging system |
| CN112858807A (en) * | 2020-12-31 | 2021-05-28 | 深圳市中科华工科技有限公司 | Electronic device heat dispersion test mode and thermal resistance tester thereof |
-
2010
- 2010-09-08 CN CN 201020521051 patent/CN201773168U/en not_active Expired - Lifetime
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102288841B (en) * | 2011-04-27 | 2014-04-16 | 株洲南车时代电气股份有限公司 | Plug-in unit identification system and method of common testing interface |
| CN102288841A (en) * | 2011-04-27 | 2011-12-21 | 株洲南车时代电气股份有限公司 | Plug-in unit identification system and method of common testing interface |
| CN102749152A (en) * | 2012-07-27 | 2012-10-24 | 北京市科通电子继电器总厂 | Method and apparatus for measuring junction temperature based on MOSFET (metal-oxide-semiconductor field-effect transistor) |
| CN102749152B (en) * | 2012-07-27 | 2014-12-17 | 北京市科通电子继电器总厂 | Method and apparatus for measuring junction temperature based on MOSFET (metal-oxide-semiconductor field-effect transistor) |
| CN103048606B (en) * | 2012-12-30 | 2015-03-18 | 杭州士兰微电子股份有限公司 | Thermal resistance test device and method of semiconductor power device |
| CN103048606A (en) * | 2012-12-30 | 2013-04-17 | 杭州士兰微电子股份有限公司 | Thermal resistance test device and method of semiconductor power device |
| CN103076551A (en) * | 2013-01-01 | 2013-05-01 | 北京工业大学 | Thermal resistance composition test device and method for LED (light emitting diode) lamp |
| CN103076551B (en) * | 2013-01-01 | 2015-10-21 | 北京工业大学 | A kind of LED lamp thermal resistance forms proving installation and method |
| CN103792476A (en) * | 2014-01-17 | 2014-05-14 | 中国空间技术研究院 | Thermal resistance measuring method for semiconductor device |
| CN104297658B (en) * | 2014-10-24 | 2018-04-27 | 工业和信息化部电子第五研究所 | Metal-oxide half field effect transistor thermo-resistance measurement plate |
| CN104297658A (en) * | 2014-10-24 | 2015-01-21 | 工业和信息化部电子第五研究所 | Device, method and testing plate for testing thermal resistance of metal-oxide-semiconductor field-effect transistor |
| CN104764990A (en) * | 2015-04-02 | 2015-07-08 | 泰州海天半导体有限公司 | Device and method for online testing thermal resistance in chip mounting process |
| CN105572559A (en) * | 2016-03-09 | 2016-05-11 | 西安后羿半导体科技有限公司 | Power MOSFET packaging thermal resistance comparison device |
| CN108828383A (en) * | 2018-08-13 | 2018-11-16 | 深圳市亚派光电器件有限公司 | Photoelectric cell test macro and method |
| CN110045259A (en) * | 2019-03-28 | 2019-07-23 | 武汉市毅联升科技有限公司 | A kind of LD-TO device aging system |
| CN110045259B (en) * | 2019-03-28 | 2021-01-05 | 武汉市毅联升科技有限公司 | LD-TO device aging system |
| CN112858807A (en) * | 2020-12-31 | 2021-05-28 | 深圳市中科华工科技有限公司 | Electronic device heat dispersion test mode and thermal resistance tester thereof |
| CN112858807B (en) * | 2020-12-31 | 2022-03-22 | 深圳市中科华工科技有限公司 | Electronic device heat dispersion test mode and thermal resistance tester thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110323 |