CN201772946U - High-power silicon substrate LED junction temperature detection device - Google Patents
High-power silicon substrate LED junction temperature detection device Download PDFInfo
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- CN201772946U CN201772946U CN 201020197978 CN201020197978U CN201772946U CN 201772946 U CN201772946 U CN 201772946U CN 201020197978 CN201020197978 CN 201020197978 CN 201020197978 U CN201020197978 U CN 201020197978U CN 201772946 U CN201772946 U CN 201772946U
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- constant temperature
- silicon substrate
- power silicon
- junction temperature
- electric heating
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Abstract
The utility model provides a high-power silicon substrate light emitting diode (LED) junction temperature detection device, which is used for solving the problem of instable and non-uniform temperature in a constant temperature cabinet during high-power LED junction temperature detection. The high-power silicon substrate LED junction temperature detection device provided by the utility model comprises the constant temperature cabinet and a heater, wherein the heater is an electric heating wire insulating layer which is adhered to the inner wall of the constant temperature cabinet; the electric heating wire insulating layer is a soft cable type electric heating element which is spirally wound on a heat-resistant core wire; and the electric heating wire insulating layer is electrically connected with a temperature controller. Compared with the prior art, the heater provided by the utility model is adhered to the inner wall of the constant temperature cabinet, so the four walls of the constant temperature box can emit heat to ensure more uniform heat distribution in the constant temperature cabinet and the temperature in the constant temperature cabinet can be more quickly adjusted.
Description
Technical field
The utility model relates to a kind of LED junction temperature pick-up unit, particularly relates to the junction temperature pick-up unit of high-power silicon substrate LED.
Background technology
The junction temperature of high-power silicon substrate LED detects the two kinds of methods that adopt usually, and a kind of is the forward voltage method; Another is the pin temperature method.
Above-mentioned two kinds of method needs side LED devices are in the state that does not encapsulate, and destroyed the globality of device, so effect are undesirable.
Put down in writing a kind of new great power LED checkout equipment in the open file in Chinese patent ZL200820046226.5, open March 25 2009 date.This equipment is in constant temperature oven LED to be detected.Comprise well heater in this constant temperature oven.This well heater is arranged on the constant temperature oven bottom, for providing heat to guarantee the temperature in the constant temperature oven in the constant temperature oven.
In actual use, because this well heater is a heat point source, in well heater work, heat distribution in the constant temperature oven is also inhomogeneous, there is the temperature difference in the constant temperature oven, place promptly far away apart from well heater is lower than the temperature in the place near apart from well heater, and occurrence temperature fluctuation easily, and this can cause LED to detect error.And the time of the interior temperature stabilization of constant temperature oven is longer, influences detection efficiency.
The utility model content
Technical problem to be solved in the utility model is: a kind of high-power silicon substrate LED junction temperature pick-up unit is provided, is used for solving the unstable uneven problem of environment temperature in the great power LED junction temperature testing process constant temperature oven.
In order to address the above problem, the utility model provides a kind of high-power silicon substrate LED junction temperature pick-up unit, comprise constant temperature oven and well heater, described well heater is the electrothermic wire insulation layer, the electrothermic wire insulation layer sticks on the described constant temperature oven inwall, this electrothermic wire insulation layer is that soft cable-styled heating is spirally wrapped around on the heat-resisting heart yearn, and this electrothermic wire insulation layer is electrically connected temperature controller.
Preferably: all be attached with the electrothermic wire insulation layer on the whole inwalls of constant temperature oven.
The beneficial effects of the utility model:
Compared to existing technology, the utility model provides a kind of well heater of electric blanket formula, and this well heater sticks on the constant temperature oven inwall, and the constant temperature oven wall all can the evolution of heat like this, make the interior heat distribution of constant temperature oven more even, and adjustment is more quick in the constant temperature oven.
Description of drawings
Fig. 1 is a structural drawing of the present utility model.
Embodiment
Square constant temperature oven 1 internal fixation of the high-power silicon substrate LED junction temperature pick-up unit that the utility model proposes has high-power silicon substrate LED 2, and high-power silicon substrate LED 2 connects constant current source 9.All fixedly be attached with well heater 3 on the inwall around in the constant temperature oven 1.Well heater 3 is the electrothermic wire insulation layer, and its structure is that soft cable-styled heating is spirally wrapped around on the heat-resisting heart yearn.This well heater 3 is electrically connected temperature controller 7.Temperature controller 7 simultaneously with stretch into constant temperature oven in temp probe 8 be connected.
In constant temperature oven 1, the opposite of high-power silicon substrate LED 2 is provided with light harvesting optical fiber 4, between light harvesting optical fiber 4 and the high-power silicon substrate LED 2 baffle plate 10 is set.Light harvesting optical fiber 4 is connected with spectrometer 5, computer 6 successively.
Claims (2)
1. high-power silicon substrate LED junction temperature pick-up unit, comprise constant temperature oven and well heater, it is characterized in that: described well heater is the electrothermic wire insulation layer, the electrothermic wire insulation layer sticks on the described constant temperature oven inwall, this electrothermic wire insulation layer is that soft cable-styled heating is spirally wrapped around on the heat-resisting heart yearn, and this electrothermic wire insulation layer is electrically connected temperature controller.
2. high-power silicon substrate LED junction temperature pick-up unit according to claim 1 is characterized in that: all be attached with the electrothermic wire insulation layer on the whole inwalls of constant temperature oven.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201020197978 CN201772946U (en) | 2010-05-20 | 2010-05-20 | High-power silicon substrate LED junction temperature detection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201020197978 CN201772946U (en) | 2010-05-20 | 2010-05-20 | High-power silicon substrate LED junction temperature detection device |
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CN201772946U true CN201772946U (en) | 2011-03-23 |
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CN 201020197978 Expired - Lifetime CN201772946U (en) | 2010-05-20 | 2010-05-20 | High-power silicon substrate LED junction temperature detection device |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102230831A (en) * | 2011-03-30 | 2011-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for measuring substrate temperature and device layer temperature in LED (light-emitting diode) simultaneously |
CN102829890A (en) * | 2012-08-07 | 2012-12-19 | 陕西科技大学 | Device and method for measuring junction temperature of LED (light emitting diode) |
CN103048060A (en) * | 2011-10-11 | 2013-04-17 | 常州光电技术研究所 | Junction temperature measuring device for LED (Light Emitting Diode) lamp |
CN103162856A (en) * | 2011-12-19 | 2013-06-19 | 上海航空电器有限公司 | Non-contact high-power light-emitting diode (LED) junction temperature test method |
CN103852705A (en) * | 2012-12-04 | 2014-06-11 | 株式会社九州日昌 | Constant temperature device |
CN104316215A (en) * | 2014-11-10 | 2015-01-28 | 常州工学院 | Device and method for measuring junction temperature of LED through bridge |
CN105352620A (en) * | 2015-11-05 | 2016-02-24 | 广东工业大学 | Method for measuring junction temperature of light-emitting diode and application thereof |
CN109933111A (en) * | 2019-01-11 | 2019-06-25 | 河南省地震局 | Seismometer constant temperature low humidity monitor and monitoring method |
CN111220295A (en) * | 2018-11-26 | 2020-06-02 | 中国科学院长春光学精密机械与物理研究所 | Automatic detection equipment and measurement method for non-contact measurement of junction temperature of LED lamp |
-
2010
- 2010-05-20 CN CN 201020197978 patent/CN201772946U/en not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102230831A (en) * | 2011-03-30 | 2011-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for measuring substrate temperature and device layer temperature in LED (light-emitting diode) simultaneously |
CN103048060B (en) * | 2011-10-11 | 2014-05-28 | 常州光电技术研究所 | Junction temperature measuring device for LED (Light Emitting Diode) lamp |
CN103048060A (en) * | 2011-10-11 | 2013-04-17 | 常州光电技术研究所 | Junction temperature measuring device for LED (Light Emitting Diode) lamp |
CN103162856B (en) * | 2011-12-19 | 2016-03-23 | 上海航空电器有限公司 | A kind of contactless great power LED method for testing junction temperature |
CN103162856A (en) * | 2011-12-19 | 2013-06-19 | 上海航空电器有限公司 | Non-contact high-power light-emitting diode (LED) junction temperature test method |
CN102829890B (en) * | 2012-08-07 | 2015-01-28 | 陕西科技大学 | Device and method for measuring junction temperature of LED (light emitting diode) |
CN102829890A (en) * | 2012-08-07 | 2012-12-19 | 陕西科技大学 | Device and method for measuring junction temperature of LED (light emitting diode) |
CN103852705A (en) * | 2012-12-04 | 2014-06-11 | 株式会社九州日昌 | Constant temperature device |
CN104316215A (en) * | 2014-11-10 | 2015-01-28 | 常州工学院 | Device and method for measuring junction temperature of LED through bridge |
CN105352620A (en) * | 2015-11-05 | 2016-02-24 | 广东工业大学 | Method for measuring junction temperature of light-emitting diode and application thereof |
CN105352620B (en) * | 2015-11-05 | 2018-06-12 | 广东工业大学 | A kind of junction temperature measurement method of light emitting diode and application |
CN111220295A (en) * | 2018-11-26 | 2020-06-02 | 中国科学院长春光学精密机械与物理研究所 | Automatic detection equipment and measurement method for non-contact measurement of junction temperature of LED lamp |
CN109933111A (en) * | 2019-01-11 | 2019-06-25 | 河南省地震局 | Seismometer constant temperature low humidity monitor and monitoring method |
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Legal Events
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20110323 |
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CX01 | Expiry of patent term |