CN105352620B - A kind of junction temperature measurement method of light emitting diode and application - Google Patents
A kind of junction temperature measurement method of light emitting diode and application Download PDFInfo
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- CN105352620B CN105352620B CN201510742614.1A CN201510742614A CN105352620B CN 105352620 B CN105352620 B CN 105352620B CN 201510742614 A CN201510742614 A CN 201510742614A CN 105352620 B CN105352620 B CN 105352620B
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- emitting diode
- light emitting
- junction temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Abstract
A kind of junction temperature measurement method of light emitting diode of the present invention includes following steps（1）Determine calibration relation and（2）It measures capacitance and determines two big step of junction temperature.The junction temperature measurement method of the light emitting diode is using positive capacitance with the principle of temperature significant change, the variation of the Area junction capacitors of itself during by monitoring LED operation, and compared with the calibration relation measured in advance, the temperature in LED junction area is obtained, so as to obtain the junction temperature of LED chip working condition.Compared with existing most of junction temperature measurement technologies, advantages of the present invention essentially consists in：1）Due to only needing once to calibrate measurement, measurement error is small；2）Calibration curve linear relationship is preferable；3）Operation is simple；4）Only need conventional electrical testing device.
Description
Technical field
The present invention relates to LED test technical field, more particularly to a kind of junction temperature measurement side of light emitting diode
Method and its application.
Background technology
Light emitting diode（Light Emitting Diode, abbreviation LED）It is a kind of solid state light emitters, great power LED
Input power in only 20% ~ 30%（This numerical value changes with the difference of semi-conducting material）Be converted to luminous energy, and remaining
70% ~ 80% be dissipated in the form of thermal energy.So huge heat if constantly accumulation, can lead to LED
Junction temperature increases, and so as to seriously affect the luminous flux of LED, service life, reliability etc., and can lead to red shift of the emission spectra, encapsulating material
Yellow etc..Therefore, accurately measuring junction temperature has important practical significance.
The measuring method of LED mainly has the contact measuring methods such as forward voltage drop method and pin thermometry and peak value wave at present
Regular way, indigo plant Bai Bifa, infrared photography method, the non-contact methods such as FInite Element and PN junction resistance.These methods have respective
Advantage and disadvantage, the relationship that forward voltage drop method is varied with temperature by demarcating the voltage under LED operation electric current, and then measure different operating
Junction temperature under state and radiating condition, and if operating current changes, and needs to re-scale；The practical examination of pin thermometry
In testing, junction temperature is generally required to be more than 50 DEG C than pin temperature difference.Peak wavelength method can be brought no small to test result when testing
Error according to high-precision spectrometer, then can greatly increase testing cost.Blue white method of comparison is only applicable to InGaN+YAG
White light LEDs, for other LED, such as RGB three primary colours mixture of white LED and monochromatic LED, this method does not just apply to；It is infrared to take the photograph
Picture method cost is higher, and it must be unencapsulated or Kaifeng state to require measured device, simultaneously because chip different levels are hot
Infrared information interferes with each other to form noise, and this method also can not accurately sense internal active layer temperature, therefore, test result have compared with
Big error；FInite Element is built upon on the basis of some hypothesis, and in practical application, these hypothesis are not necessarily set up,
This method needs complicated calculating simultaneously.
The Patent application Publication text of application number CN103217229A discloses a kind of semiconductor material using in LED chip
The temperature of material becomes resistance characteristic to measure the method for junction temperature, this method be measured in LED operation state GaN material resistance and and
Calibration curve comparison obtains junction temperature；From the point of view of disclosed data, material resistance and temperature and the non-linear relation of LED increase
The difficulty of junction temperature measurement.In addition, document《Become the research of capacitance feature measurement junction temperature of light emitting diode using temperature》（Acta Physica Sinica,
2015,64,118501）The temperature for having reported a kind of reciprocal capacitance using LED becomes the technology that characteristic carries out LED junction temperature measurement.It should
Technology is utilized the reversed barrier capacitance variation with temperature characteristic of LED, and the work of LED in itself need forward voltage drive
It is dynamic, therefore in measurement process, it is related to the conversion of the positive-negative polarity of power supply, reduce the speed of measurement.
Therefore, for of the prior art there are problem, it is urgent to provide a kind of easy to operate, at low cost, efficient and tests
Accurately light emitting diode point junction temperature measurement technology is particularly important.
Invention content
It is provided a kind of easy to operate, at low cost, high it is an object of the invention to avoid shortcoming of the prior art
The light emitting diode point junction temperature measurement method of effect and accurate testing.
The purpose of the present invention is achieved through the following technical solutions：
A kind of junction temperature measurement method of light emitting diode is provided, includes following steps：
（1）Determine calibration relation：
Test the calibration relation of capacitance of the LED device under specific forward voltage under different temperatures；
（2）It measures capacitance and determines junction temperature：
In LED operation, measure the capacitance of the light emitting diode and institute is determined according to the calibration relation
State light emitting diode point junction temperature.
Preferably,（1）Determine that calibration relation step includes following sub-step：
1.1 are packaged light emitting diode, and the N-type electrode of the light emitting diode and P-type electrode are drawn respectively
Go out；
The N-type electrode of packaged light emitting diode and P-type electrode are connected to capacitance measurement source table, light-emitting diodes by 1.2
Pipe N-type electrode and P-type electrode both ends are set under specific forward voltage；
1.3 under the dry environment of temperature control, and it is corresponding luminous to be recorded in different temperatures under specific forward voltage
The capacitance of diode obtains capacitance variation with temperature relationship of the light-emitting diode chip for backlight unit under the specific voltage, the variation
Relationship is as calibration relation.
It is furthermore preferred that in the step 1.3, the temperature of the controllable air dry oven of set temperature treats air dry oven
After temperature is stablized, as described temperature control point dry environment.
Preferably,（2）It measures capacitance and determines that junction temperature step includes following sub-step：
2.1 are coupled with the P-type electrode of light emitting diode and N-type electrode the anode and cathode of capacitance measurement source table, institute
The table offer of capacitance measurement source and step are provided（1）Consistent specific forward voltage；
2.2 connect light emitting diode and DC power supply by switching；
2.3, when the junction temperature for measuring light emitting diode, the light emitting diode and the DC power supply are turned off, and remembers
Record the measurement capacitance of capacitance measurement source table, by with step（1）Calibration relation be compared calculating determine it is corresponding
The junction temperature of light emitting diode.
It is furthermore preferred that the switch in step 2.2 between light emitting diode and DC power supply is manually or the tool of numerical control
There is the switch of double-pole single-throw (D.P.S.T.) function.
It is another preferred,（2）It measures capacitance and determines that junction temperature step has further included following steps：
2.1 by light emitting diode by manually or the switch with double-pole double throw of numerical control connects capacitance respectively
Measurement source table or DC power supply realize closed circuit, light emitting diode and the direct current of light emitting diode and capacitance measurement source table
Single choice physics switching between the closed circuit in source；
2.2 when light emitting diode works normally, and light emitting diode is in closed circuit with DC power supply；It shines measuring
During diode junction temperature, light emitting diode is in closed circuit, the capacitance measurement of record capacitance measurement source table with capacitance measurement source table
Value, and by with step（1）Calibration relation be compared calculate determine corresponding light emitting diode junction temperature.
Preferably, the specific forward voltage is 0 ~ 50V voltages.
Preferably, measurement frequency when capacitance measurement source table measures light emitting diode capacitance is 1Hz ~ 100MHz.
Preferably, the luminescent material of the light emitting diode is GaN base, the binary of GaAs bases and GaP bases, ternary and quaternary
It is one or more than one kinds of in compound；
The substrate of the light-emitting diode chip for backlight unit is any one in sapphire, SiC, Si, GaN or metal transfer substrate
Kind.
Another object of the present invention is to the application of a kind of junction temperature measurement method of light emitting diode, a kind of above-mentioned hair
The junction temperature measurement method of optical diode is applied to vertical stratification or the light-emitting diode chip for backlight unit junction temperature measurement of planar structure；Alternatively,
Applied to formal dress or the light-emitting diode chip for backlight unit junction temperature measurement of upside-down mounting.
Beneficial effects of the present invention：
A kind of junction temperature measurement method of light emitting diode of the present invention includes following steps（1）Determine calibration relation and
（2）It measures capacitance and determines two big step of junction temperature.The junction temperature measurement method of the light emitting diode is apparent with temperature using positive capacitance
The principle of variation, the variation of the Area junction capacitors of itself during by monitoring LED operation, and carried out pair with the calibration relation that measures in advance
Than the temperature in acquisition LED junction area, so as to obtain the junction temperature of LED chip working condition.The method principle and operation are relatively simple
Single, calibration relation determines to carry out once, and calibration relation is applicable to the survey of arbitrary operating voltage and the LED junction temperature of electric current
Amount, simple to operate, error is small.Also, measurement can be completed using capacitance measurement source table and switch in the present invention, does not need to make
It with the test equipment of complex and expensive, can effectively reduce cost, be conducive to the popularization and application of technology.In addition, the technology of the present invention is
Using the characteristic of the positive capacitance of LED, if the forward voltage values that calibration uses when measuring are identical with voltage value during LED operation
When, it is also possible to the use of source table is further reduced, simplifies measurement procedure.Compared with existing most of junction temperature measurement technologies,
Advantages of the present invention essentially consists in：
1）Due to only needing once to calibrate measurement, measurement error is small；
2）Calibration curve linear relationship is preferable；
3）Operation is simple；
4）Only need conventional electrical testing device.
Description of the drawings
Using attached drawing, the present invention will be further described, but the content in attached drawing does not form any limitation of the invention.
Fig. 1 is the positive capacitance of GaN base blue-ray LED used in the embodiment of the present invention one and the relation schematic diagram of temperature；
Fig. 2 is the schematic diagram for the measuring method that the embodiment of the present invention one proposes；
Fig. 3 is the relation curve used in the embodiment of the present invention one between the junction temperature of GaN base blue-ray LED and electric current；
Fig. 4 is that the positive capacitance of AlGaInP red-light LEDs used in the embodiment of the present invention two and the relationship of temperature are illustrated
Figure；
Fig. 5 is the schematic diagram for the measuring method that the embodiment of the present invention two proposes；
Fig. 6 is the relation curve used in the embodiment of the present invention two between the junction temperature of GaN base blue-ray LED and electric current.
Specific embodiment
A kind of junction temperature of light emitting diode measuring method of the present invention is that the positive capacitance based on junction device is apparent with temperature
The principle of variation measures and calibrates the relationship that capacitances of the LED under certain specific forward voltage varies with temperature；In LED operation mistake
Cheng Zhong measures capacitances of the LED under the specific forward voltage, and compared with the data of calibration relation or calculates in real time, realizes
The test of LED junction temperature under arbitrary operating voltage and electric current.The junction temperature measurement method of the light emitting diode is applied to vertical stratification
Or the light-emitting diode chip for backlight unit junction temperature measurement of planar structure；Alternatively, applied to formal dress or the light-emitting diode chip for backlight unit junction temperature of upside-down mounting
It measures.
In conjunction with following embodiment, the invention will be further described, but embodiments of the present invention are not limited to this.
Embodiment 1
The present embodiment uses the InGaN blue-ray LEDs of GaN base, the LED using upside-down mounting chip structure.In LED
LED is being included just to the bonding wire of progress electrode and encapsulation, subsequent junction temperature of light emitting diode measuring method on LED chip on stent
The junction temperature of LED under the calibration of capacitance and temperature relation and actual working state tests two parts.One kind of the present invention shines
The junction temperature measurement method of diode, includes following steps：
（1）Determine calibration relation：
1.1 are packaged light emitting diode, and the N-type electrode of the light emitting diode and P-type electrode are drawn respectively
Go out；
The N-type electrode of packaged light emitting diode and P-type electrode are connected to capacitance measurement source table, light-emitting diodes by 1.2
Pipe N-type electrode and P-type electrode both ends are set under specific forward voltage；
The temperature of the controllable air dry oven of 1.3 set temperatures, after the temperature of air dry oven is stablized, as the point
Temperature control point dry environment, under the dry environment of temperature control, is recorded in different temperatures under specific forward voltage
The capacitance of corresponding light emitting diode obtains capacitance variation with temperature of the light-emitting diode chip for backlight unit under the specific voltage and closes
System, as calibration relation, the calibration for completing capacitance and temperature under the specific forward voltage measures the variation relation.
If above-mentioned calibration measures, the capacitance that obtains and temperature curve linear relationship be poor or the slope of linear relationship（△C/
△T）It is too small, another specific forward voltage can be used and repeat above-mentioned experiment, until obtaining preferable capacitance and temperature linearity relationship
And higher temperature becomes capacitance sensitivity.The present embodiment obtains ideal positive capacitance and temperature when forward voltage is 0V
Calibration curve, as shown in Figure 1.Good linear relationship, slope △ C/ △ T=0.197pF/ DEG C, tool is presented in the calibration curve
There is higher temperature to become capacitance sensitivity.
（2）It measures capacitance and determines junction temperature：As shown in Fig. 2,
2.1 are coupled with the P-type electrode of light emitting diode and N-type electrode the anode and cathode of capacitance measurement source table, institute
The table offer of capacitance measurement source and step are provided（1）Consistent specific forward voltage 0V, condition during as capacitance measurement；
2.2 by light emitting diode and DC power supply by manually or numerical control has the function of the switch of double-pole single-throw (D.P.S.T.)
Connection；Needed voltage and current value when DC power supply provides light emitting diode normal work, switch realize light emitting diode with
Physical connection and shutdown between DC power supply, in this embodiment, DC power supply provides constant current 50mA, 100mA, 150 respectively
MA, 200mA, 250mA, 300 mA drive LED；
2.3 keep switch connection to ensure the physical connection between light emitting diode and DC power supply, when light emitting diode is steady
After fixed work, when need sometime measure junction temperature of light emitting diode, double-pole single throw is controlled to realize light-emitting diodes manually
Physics between pipe and DC power supply turns off, and within the several seconds of shutdown, the measurement capacitance of record capacitance measurement source table, record finishes
Afterwards, restore the physical connection between light emitting diode and DC power supply, LED continues steady operation.By measurement capacitance and luminous two
The calibration relation that capacitance of the pole pipe under 0V voltages varies with temperature is compared, and can obtain the temperature of corresponding light emitting diode
Degree, the i.e. junction temperature of light emitting diode.According to above-mentioned steps, constant current 50mA, 100mA, 150 mA, 200mA, 250mA are measured respectively,
The junction temperature of the LED of 300 mA drivings can obtain the relation curve between the junction temperature of LED under different constant currents driving and electric current, such as
Shown in Fig. 3.
Embodiment 2
The present embodiment use AlGaInP be emitting layer material red-light LED, the LED using formal dress chip
Structure.The positive capacitance of LED in the embodiment is identical with embodiment one with the calibration part of temperature relation, the forward direction obtained
Capacitance and the calibration curve of temperature are as shown in Figure 4.The calibration curve is equally presented good linear relationship, and slope △ C/ △ T=
It is 0.185pF/ DEG C, similary to become capacitance sensitivity with higher temperature.
It measures capacitance and determines that junction temperature includes the following steps：
2.1 as shown in figure 5, connect capacitance measurement source table respectively by light emitting diode by the double-point double-throw switch of numerical control
Or DC power supply, realize the closure of the closed circuit of light emitting diode and capacitance measurement source table, light emitting diode and DC power supply
Single choice physics switching between circuit.Wherein, P-type electrode and N-type electrode are coupled with the anode and cathode of capacitance measurement source table,
Capacitance measurement source table provides the specific forward voltage consistent with during calibration（2V）, condition during as capacitance measurement.Direct current
Source provides voltage and current value needed during light emitting diode normal work.
2.2 control double-point double-throw switch by programmable numerical control, and light emitting diode is made to be formed with DC power supply and is closed back
Road, DC power supply provide voltage and current value needed during light emitting diode normal work.In this embodiment, DC power supply point
Indescribably LED is driven for constant current 50mA, 100mA, 150 mA, 200mA, 250mA, 300 mA.
2.3 by taking constant current 50mA drives LED operation as an example.Switch connection is kept to ensure between light emitting diode and DC power supply
Closed circuit connection, and the circuit of light emitting diode and capacitance measurement source table be in physics and disconnects.When light emitting diode is stablized
After work, when need sometime measure junction temperature of light emitting diode, computer or terminal control double-point double-throw switch using program
Realize that the physics in the circuit of light emitting diode and DC power supply turns off, and form the closure of light emitting diode and capacitance measurement source table
Circuit.Within the several seconds of shutdown, the measurement capacitance of record capacitance measurement source table, after record, restore light emitting diode with
Closed circuit between DC power supply, LED continue steady operation.By measurement capacitance and capacitance of the light emitting diode under 2V voltages
The calibration relation varied with temperature is compared, and can obtain the junction temperature of the temperature of corresponding light emitting diode, i.e. light emitting diode.
According to above-mentioned steps, the junction temperature of the LED of constant current 100mA, 150 mA, 200mA, 250mA, 300 mA driving is measured respectively, can be obtained
Relation curve between the junction temperature and electric current of LED under being driven to different constant currents, as shown in Figure 6.
The main technical schemes of the present embodiment are substantially the same manner as Example 1, and the feature not laid down a definition in the present embodiment is adopted
With the explanation in embodiment 1, no longer repeated herein.
Finally it should be noted that the embodiment of invention described above, is not formed to the scope of the present invention
Restriction.Any made modifications, equivalent substitutions and improvements within the spiritual principles of the present invention etc., should be included in this hair
Within bright claims.
Claims (7)
1. a kind of junction temperature measurement method of light emitting diode, which is characterized in that include following steps：
Determine calibration relation：
Test the calibration relation of capacitance of the LED device under specific forward voltage under different temperatures；
It measures capacitance and determines junction temperature：
In LED operation, measure the capacitance of the light emitting diode and the hair is determined according to the calibration relation
Optical diode point junction temperature；
（1）Determine that calibration relation step includes following sub-step：
1.1 are packaged light emitting diode, and the N-type electrode of the light emitting diode and P-type electrode are drawn respectively；
The N-type electrode of packaged light emitting diode and P-type electrode are connected to capacitance measurement source table, light emitting diode N-type by 1.2
Electrode and P-type electrode both ends are set under specific forward voltage；
1.3 under the dry environment of temperature control, is recorded in the corresponding light-emitting diodes of different temperatures under specific forward voltage
The capacitance of pipe obtains capacitance variation with temperature relationship of the light-emitting diode chip for backlight unit under the specific voltage, the variation relation
As calibration relation；
In the step 1.3, the temperature of the controllable air dry oven of set temperature after the temperature of air dry oven is stablized, is made
For described temperature control point dry environment；
（2）It measures capacitance and determines that junction temperature step includes following sub-step：
2.1 are coupled with the P-type electrode of light emitting diode and N-type electrode the anode and cathode of capacitance measurement source table, the electricity
The table offer of measurement source and step are provided（1）Consistent specific forward voltage；
2.2 connect light emitting diode and DC power supply by switching；
2.3, when the junction temperature for measuring light emitting diode, the light emitting diode and the DC power supply are turned off, and record institute
State the measurement capacitance of capacitance measurement source table, by with step（1）Calibration relation be compared calculating determine it is corresponding shine
The junction temperature of diode.
2. a kind of junction temperature measurement method of light emitting diode according to claim 1, it is characterised in that：It is sent out in step 2.2
Switch between optical diode and DC power supply is manually or numerical control has the function of the switch of double-pole single-throw (D.P.S.T.).
3. a kind of junction temperature measurement method of light emitting diode according to claim 1, it is characterised in that：（2）Measure capacitance
Determine that junction temperature step has further included following steps：
2.1 by light emitting diode by manually or the switch with double-pole double throw of numerical control connects capacitance measurement respectively
Source table or DC power supply realize the closed circuit of light emitting diode and capacitance measurement source table, light emitting diode and DC power supply
Single choice physics switching between closed circuit；
2.2 when light emitting diode works normally, and light emitting diode is in closed circuit with DC power supply；Measuring light-emitting diodes
During pipe junction temperature, light emitting diode is in closed circuit with capacitance measurement source table, records the measurement capacitance of capacitance measurement source table, and
By with step（1）Calibration relation be compared calculate determine corresponding light emitting diode junction temperature.
4. a kind of junction temperature measurement method of light emitting diode according to claims 1 to 3 any one, it is characterised in that：
The specific forward voltage is 0 ~ 50V voltages.
5. a kind of junction temperature measurement method of light emitting diode according to claims 1 to 3 any one, it is characterised in that：
Measurement frequency when capacitance measurement source table measures light emitting diode capacitance is 1Hz ~ 100MHz.
6. a kind of junction temperature measurement method of light emitting diode according to claim 1, it is characterised in that：
The luminescent material of the light emitting diode is in GaN base, the binary of GaAs bases and GaP bases, ternary and quaternary compound
It is one or more than one kinds of；
The substrate of the light-emitting diode chip for backlight unit is any one in sapphire, SiC, Si, GaN or metal transfer substrate.
7. the application of a kind of junction temperature measurement method of light emitting diode, it is characterised in that：As described in claim 1 ~ 6 any one
The junction temperature measurement method of light emitting diode be applied to the light-emitting diode chip for backlight unit junction temperature measurement of vertical stratification or planar structure；Or
Person, applied to formal dress or the light-emitting diode chip for backlight unit junction temperature measurement of upside-down mounting.
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| CN106441587B (en) * | 2016-08-31 | 2019-01-11 | 付洪斌 | A kind of High-Speed Automatic on-line measuring device of LED lamp integrated chip junction temperature |
| CN112180227A (en) * | 2020-09-25 | 2021-01-05 | 浙江大学 | Non-contact type silicon carbide power device junction temperature online detection system and detection method |
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