CN201724908U - Chip appearance inspection device - Google Patents
Chip appearance inspection device Download PDFInfo
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- CN201724908U CN201724908U CN2010201985489U CN201020198548U CN201724908U CN 201724908 U CN201724908 U CN 201724908U CN 2010201985489 U CN2010201985489 U CN 2010201985489U CN 201020198548 U CN201020198548 U CN 201020198548U CN 201724908 U CN201724908 U CN 201724908U
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Abstract
The utility model relates to a chip appearance inspection device which comprises an inspection platform, a spectroscope, a first light source and an image sensing element. The inspection platform is provided with a mobile hollow platform, and a wafer with a plurality of LED chips is arranged in the hollow platform. The spectroscope is positioned above the inspection platform. The first light source is arranged at one side of the spectroscope, and a first light beam generated by the first light source is projected to the spectroscope to generate a second light beam projected to the upper surface of the LED chip, and the second light beam reflected by the upper surface of the LED chip to be a third light beam projected upward. The image sensing element is positioned above the spectroscope to receive the third light beam through the spectroscope so as to get an image on every LED chip. The chip appearance inspection device avoids manual work and ink waste, thus lowering the production cost and increasing the efficiency, and is convenient to remove the imperfect LED chips.
Description
Technical field
The utility model relates to a kind of pick-up unit, relates in particular to a kind of chip appearance delection device.
Background technology
The fraction defective of chip reduces and output rises to the index that present industry is vied each other, but whole 3% the fraction defective that still has, in the electronic chip manufacturing, roughly have " yellow light area ", " sedimentary province ", " diffusion region ", " injection region ", " cutting area " reaches " test section " and waits each flow process, these fraction defectives may come from any district of above-mentioned technology, and these bad chips have scratch or spread characteristics such as incomplete, so on color and luster, can the different of a little be arranged with good chip, mode via artificial visual goes up the ink identification with bad chip point, again that those are bad chip is chosen to shave from the full wafer wafer and is removed, this work of choosing bad chip is lost time and is inefficent very much, and use ink can cause the waste of environmental pollution and cost again, because dealer itself can't accurately control and have how many bad chips on the wafer or those are zones of bad chip, these shortcomings have caused wastes many on the technology cost, so when improving the product yield, how to learn that the quantity of bad chip and the zone of bad chip are present industry problem demanding prompt solutions.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of chip appearance delection device.The utility model more can be by quantity and the zone of computer to calculate bad light-emitting diode chip for backlight unit except can exempting the waste of manual work and ink, and then make the technology that removes bad light-emitting diode chip for backlight unit more convenient.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present utility model, a kind of chip appearance delection device is provided, its quantity and position in order to detect the bad light-emitting diode chip for backlight unit on the wafer, this wafer is made up of a plurality of light-emitting diode chip for backlight unit, and this wafer is placed on the detection platform and detects, wherein this chip appearance delection device, comprise: a spectroscope, it is arranged at the top of this detection platform and this wafer; One can adjust first light source of emission wavelength along with the type of described light-emitting diode chip for backlight unit, and it is arranged at by this spectroscopical side; One secondary light source, it is arranged in this detection platform and the below of this wafer; One optical filter, it is arranged at this spectroscopical top; One image sensing element, it is arranged at the top of this optical filter; And one in order to calculate bad light-emitting diode chip for backlight unit data computing device, and it is electrically connected on this image sensing element, and wherein these bad light-emitting diode chip for backlight unit data comprise the quantity of bad light-emitting diode chip for backlight unit and the position of bad light-emitting diode chip for backlight unit.
The beneficial effects of the utility model are: the utility model is wasted so that manufacturing cost reduction and the efficient raising except exempting manual work and ink, more can be by the quantity and the zone of computer to calculate bad light-emitting diode chip for backlight unit, and then make the technology that removes bad light-emitting diode chip for backlight unit more convenient.Therefore, by the quantity and the zone of learning bad light-emitting diode chip for backlight unit, make to make in the light-emitting diode chip for backlight unit process and more can grasp the reason that causes bad light-emitting diode chip for backlight unit, and then make the yield of light-emitting diode chip for backlight unit increase.
For enabling further to understand feature of the present utility model and technology contents, see also following about detailed description of the present utility model and accompanying drawing, yet accompanying drawing only provide with reference to and the explanation usefulness, be not to be used for the utility model is limited.
Description of drawings
Fig. 1 looks synoptic diagram for the master of the utility model first embodiment;
Fig. 2 is the schematic top plan view of the anodal weld pad and the negative pole weld pad of the utility model light-emitting diode chip for backlight unit;
Fig. 3 looks synoptic diagram for the master of the utility model second embodiment;
Fig. 4 looks synoptic diagram for the master of the utility model the 3rd embodiment;
Fig. 5 is the schematic perspective view of the annular light source of the utility model the 3rd embodiment;
Fig. 6 is the part enlarged diagram of the utility model the 3rd embodiment;
Fig. 7 uses the diagrammatic cross-section of shell for the utility model the 3rd embodiment;
Fig. 8 looks synoptic diagram for the master of the utility model the 4th embodiment;
Fig. 9 looks synoptic diagram for the master of the utility model the 5th embodiment; And
Figure 10 looks synoptic diagram for the master of the utility model the 6th embodiment.
Description of reference numerals in the above-mentioned accompanying drawing is as follows:
Wafer W light-emitting diode chip for backlight unit d
Anodal weld pad P
Negative pole weld pad N
Side S
First light source, 3 first light beam L1
The second light beam L2
The 3rd light beam L3
The 4th light beam L4
The 5th light beam L5
The 6th light beam L6
The 7th light beam L7
The first light beam L1 "
The second light beam L2 "
Shell C open C 10
Ultrasonic thimble U
Suction nozzle M
The bad chip data D1 of data information D
Calculation element E
Optical filter F
Embodiment
See also shown in Figure 1, the utility model first embodiment provides a kind of chip appearance delection device that utilizes light beams of different wavelengths to detect the light-emitting diode chip for backlight unit outward appearance, and it comprises: a detection platform 1, a spectroscope 2, one first light source 3, an and image sensing element 4.Wherein, this detection platform 1 has a hollow platform 10 movably, it has a perforation 100, and wherein a wafer W with a plurality of light-emitting diode chip for backlight unit d is placed on the hollow platform 10 of this detection platform 1, and this spectroscope 2 is arranged at the top of this detection platform 1.
Moreover, this first light source 3 is arranged at this spectroscopical side, and this first light source 3 can be adjusted emission wavelength along with the type of described light-emitting diode chip for backlight unit d, wherein the first light beam L1 that produced of this first light source 3 invests this spectroscope 2, producing second a light beam L2 who invests the upper surface of described light-emitting diode chip for backlight unit d, and the upper surface of this second light beam L2 by described light-emitting diode chip for backlight unit d is reflected into the 3rd a light beam L3 of projection upwards.In addition, this image sensing element 4 is arranged at the top of this spectroscope 2, to receive the 3rd light beam L3 through this spectroscope 2, and then obtain the image (image of this light-emitting diode chip for backlight unit d can be analyzed by computer) of the upper surface of each light-emitting diode chip for backlight unit d, wherein the image of the upper surface of each light-emitting diode chip for backlight unit d demonstrates anodal weld pad (P-type) P and negative pole weld pad (N-type) N (as shown in Figure 2) of each light-emitting diode chip for backlight unit d.Particularly, when above-mentioned light-emitting diode chip for backlight unit d through after the alligatoring, by use of the present utility model, can obviously learn the relative position of anodal weld pad P and negative pole weld pad N, can promote in order to the accuracy of " routing technology " on the subsequent production line.
In addition, this pick-up unit further comprises: a ultrasonic thimble U and a suction nozzle M, wherein this ultrasonic thimble U is arranged at the below of this detection platform 1, to remove underproof light-emitting diode chip for backlight unit by supersonic vibration mode, and this suction nozzle M is arranged at the top of this detection platform 1, so that above-mentioned underproof light-emitting diode chip for backlight unit d is siphoned away.Therefore, the utility model can remove underproof light-emitting diode chip for backlight unit by above-mentioned nondestructive mode.
See also shown in Figure 3, the utility model second embodiment provides a kind of chip appearance delection device that utilizes light beams of different wavelengths to detect the light-emitting diode chip for backlight unit outward appearance, it comprises: a detection platform 1, a spectroscope 2, one first light source 3, an image sensing element 4, an and secondary light source 5, wherein this secondary light source 5 is arranged at the below of this detection platform 1, and this secondary light source 5 can be adjusted emission wavelength along with the type of described light-emitting diode chip for backlight unit d.Moreover, second embodiment is characterised in that: the first light beam L1 ' that this secondary light source 5 produced passes this hollow platform 10 and invests the lower surface of described light-emitting diode chip for backlight unit d, and with being used of first light source 3 of first embodiment under, can take place with the situation of avoiding light-emitting diode chip for backlight unit d to have the edge to burst apart by the external form image (also be all around the image of light-emitting diode chip for backlight unit d) of this image sensing element 4 to watch each light-emitting diode chip for backlight unit d.In addition, according to different detection demands, the emission wavelength of this first light source 3 can be identical or inequality with the emission wavelength of this secondary light source 5.Certainly, second embodiment also can cooperate the ultrasonic thimble U of first embodiment and suction nozzle M to use.
See also shown in Figure 4, the utility model the 3rd embodiment provides a kind of chip appearance delection device that utilizes light beams of different wavelengths to detect the light-emitting diode chip for backlight unit outward appearance, it comprises: a detection platform 1, a spectroscope 2, one first light source 3, an image sensing element 4, a secondary light source 5, an and annular light source 6, wherein this annular light source 6 is arranged between this spectroscope 2 and this detection platform 1, and this annular light source 6 can be adjusted emission wavelength along with the type of described light-emitting diode chip for backlight unit d.Moreover the 3rd embodiment is characterised in that: the first light beam L1 that this annular light source 6 is produced " invest the side of described light-emitting diode chip for backlight unit d in the mode that tilts, and form the second light beam L2 that reflects and invest this image sensing element 4 ".In addition, with being used of first light source 3 of second embodiment or secondary light source 5 under, watching the side view picture of each light-emitting diode chip for backlight unit d, and then can find further that more the situation that light-emitting diode chip for backlight unit d has the edge to burst apart takes place by this image sensing element 4.In addition, according to different detection demands, the emission wavelength of this first light source 3 can be identical or inequality with the emission wavelength of this annular light source 6.
See also shown in Figure 5ly, the annular light source 6 of the 3rd embodiment comprises two groups of light sources 60 (also can be and have only one group of light source), and each group light source 60 is made up of a plurality of light emitting diodes 600 that are downward-sloping and are arranged in ring-type.According to Fig. 5 for example, each the group light source 60 can by line up two the circle light-emitting diodes 600 be formed.Therefore, as shown in Figure 6, " mode that can tilt is invested the side S of described light-emitting diode chip for backlight unit d to the first light beam L 1 that this annular light source 6 is produced, and the situation that whether has the edge to burst apart with clear understanding light-emitting diode chip for backlight unit d takes place.
See also shown in Figure 7, the 3rd embodiment further comprises: one is used to coat this first light source 3, this spectroscope 2 and this annular light source 6 and the shell C that only exposes two open C 10, and this shell C presents the T font, takes place with the situation of avoiding producing light leak from the light source that this first light source 3 and this annular light source 6 are projected.
In addition, the utility model provides a kind of detection method of utilizing light beams of different wavelengths to detect the light-emitting diode chip for backlight unit outward appearance, and it comprises the following steps:
Step S100 is: at first, one pick-up unit is provided, it has first light source 3 and an image sensing element 4 that a detection platform 1, a spectroscope 2, can be adjusted emission wavelength along with the type of described light-emitting diode chip for backlight unit d, wherein this detection platform 1 has a hollow platform 10 movably, this spectroscope 2 is arranged at the top of this detection platform 1, this first light source 3 is arranged at a side of this spectroscope 2, and this image sensing element 4 is arranged at the top of this spectroscope 2.
Step S102 is: a wafer W with a plurality of light-emitting diode chip for backlight unit d is placed on the hollow platform 10 of this detection platform 1.
Step S104 is: the first light beam L1 that this first light source 3 is produced invests this spectroscope 2, producing second a light beam L2 who invests the upper surface of described light-emitting diode chip for backlight unit d, and the upper surface of this second light beam L2 by described light-emitting diode chip for backlight unit d is reflected into the 3rd a light beam L3 of projection upwards.
Step S106 is: pass through the 3rd light beam L3 of this spectroscope 2 by this image sensing element 4 with reception, and then obtain the image (as shown in Figure 1) of the upper surface of each light-emitting diode chip for backlight unit d.
Moreover, this pick-up unit further comprises: one can adjust the secondary light source 5 of emission wavelength along with the type of described light-emitting diode chip for backlight unit d, it is arranged at the below of this detection platform 1, the first light beam L1 ' that this secondary light source 5 produced in addition passes this hollow platform 10 and invests the lower surface of described light-emitting diode chip for backlight unit d, and by this image sensing element 4 to watch the external form image (as shown in Figure 3) of each light-emitting diode chip for backlight unit d.
In addition, this pick-up unit further comprises: one can adjust the annular light source 6 of emission wavelength along with the type of described light-emitting diode chip for backlight unit d, it is arranged between this spectroscope 2 and this detection platform 1, the first light beam L1 that produced of this annular light source 6 in addition " invest the side S of described light-emitting diode chip for backlight unit d in the mode that tilts, and by this image sensing element 4 to watch the side view picture (as shown in Figure 4) of each light-emitting diode chip for backlight unit d.
In addition, the mode that above-mentioned this image sensing element 4 extracts this light-emitting diode chip for backlight unit d can be: launch an of short duration light beam when illuminating described light-emitting diode chip for backlight unit d when this first light source 3, this image sensing element 4 can extract the image of a light-emitting diode chip for backlight unit d; Launch an of short duration light beam when illuminating described light-emitting diode chip for backlight unit d when this secondary light source 5, this image sensing element 4 can extract the image of a light-emitting diode chip for backlight unit d; Launch an of short duration light beam when illuminating described light-emitting diode chip for backlight unit d when this annular light source 6, this image sensing element 4 can extract the image of a light-emitting diode chip for backlight unit d.Above-mentioned step can separately carry out also can carrying out in regular turn, come for example to carry out in regular turn, can be: (this moment, secondary light source 5 was closed) → these image sensing element 4 captures (certainly for of short duration unlatching first light source 3 → these image sensing element 4 captures → of short duration unlatching secondary light source 5 (this moment, first light source 3 was closed) → these image sensing element 4 captures → of short duration unlatching annular light source 6, above-mentioned order also can be along with user's demand is arranged in pairs or groups arbitrarily), all images that obtain can intersect comparison at last, detect the quality of described light-emitting diode chip for backlight unit d whether good (for instance, can beat the catoptrical reflection coefficient that is produced when the light-emitting diode chip for backlight unit d and judge whether the surface of this light-emitting diode chip for backlight unit d has bad stain or defective) in mode accurately by light beam.
See also shown in Figure 8, the chip appearance delection device can be used for detecting the quantity and the position of the bad chip on the wafer W, wafer W is made up of a plurality of chip, chip can be light-emitting diode chip for backlight unit, and pick-up unit comprises an image sensing element 4, one detection platform 1, one spectroscope 2 and one first light source 3 are formed, wherein image sensing element 4 be selected from charge coupled cell and complementary metal oxide semiconductor inductor one of them, and image sensing element 4 front ends are provided with an optical filter F, spectroscope 2 then is located at the below of image sensing element 4,3 sides that are located at spectroscope 2 of first light source, provide emission light to spectroscope 2, first light source 3 is a kind of pattern wherein of linear light sorurce or area source, and it constitutes cold-cathode tube, the cold light source of light emitting diode or optic fibre guide one of them, and detection platform 1 is located at spectroscope 2 belows and provides wafer W to place, and in this detection platform 1, be provided with a secondary light source 5, secondary light source 5 be scanning type light source or face type backlight one of them.Image sensing element 4 connects a calculation element E in addition, the quantity and the position of writing down bad chip in order to treatment conversion, more than for this reason pick-up unit partly explain orally.
Continue and introduce this chip appearance delection device using method in detail, see also shown in Figure 9, at first wafer W is placed on the detection platform 1, then launch one first light L1 to this spectroscope 2 by first light source 3 again, and this spectroscope 2 is transformed into second a light L2 who is projected on the wafer W with the first light L1, the second light L2 absorbs back reflection and becomes the 3rd light L3 that passes spectroscope 2 via each chip on the wafer W, and the 3rd light L3 is projected in the image sensing element 4, the optical filter F of image sensing element 4 front ends wherein, converting the 3rd light L3 filtration to one the 4th light L4 is received by image sensing element 4 again, after receiving the 4th light L4, image sensing element 4 can spread out of a data information D, and utilize calculation element E to become a bad chip data D1 at a screen display data information D treatment conversion, this bad chip data D1 includes the zone of bad chip on bad number of chips and the wafer W, and whether whether each die size state of the so easier operator's of making identification normally reaches chip surface scratch and pollution.
Be subjected to scratch or spread incomplete influence when therefore above-mentioned checking system utilizes bad chip surface because of manufacturing, cause bad chip and good chip when reflecting second light, to have the difference of color (wavelength) slightly, and when making image sensing element 4 receive the 4th light L4 of wafer W reflection, convert the difference of these the 4th light L4 color to data information D, the optical filter F of this pick-up unit also has important key in addition, because this optical filter F can filter the light that can disturb in the 3rd light L3, optical filter F make the light aberration more obvious, so can change different kinds according to different wafer W.
Above-mentioned checking system is accurately to detect in some special status, as the electrode position of chip and the luminous zone of chip whether scratch and pollution are arranged, therefore must carry out another stage detects, see also shown in Figure 10, at first make secondary light source 5 emissions one the 5th light L5 in the detection platform 1, the 5th light L5 passes wafer W and forms one the 6th light L6, this the 6th light passes spectroscope 2 and optical filter F converts one the 7th light L7 to, receive the 7th light L7 to carry out capture by image sensing element 4, after receiving the 7th light L 7, same image sensing element 4 can spread out of another data information D, and utilize calculation element E that data information D treatment conversion is become another bad chip data D1 and at screen display, therefore bad chip data D1 (as shown in Figure 9) and bad chip data D1 (as shown in figure 10) integration are calculated in all bad number of chips and zone, so can fully accurately find out the quantity and the position of bad chip.
The utility model utilizes the optical filter filtration to come from the reflection ray of wafer and is received by photosensitive device, calculate the quantity and the zone of bad chip by calculation element E, and then make the technology that removes bad chip more convenient, and the utility model is more saved cost than the technology of conventional known, because can exempt the waste of manual work and ink, manufacturing cost is reduced and the efficient raising.The quantity and the zone of learning bad chip easily because of the dealer makes to make in the chip processes and more can grasp the reason that causes bad chip, and then the chip yield is increased at last.
In sum, the utility model is wasted so that manufacturing cost reduction and the efficient raising except exempting manual work and ink, more can be by the quantity and the zone of computer to calculate bad light-emitting diode chip for backlight unit, and then make the technology that removes bad light-emitting diode chip for backlight unit more convenient.Therefore, by the quantity and the zone of learning bad light-emitting diode chip for backlight unit, make to make in the light-emitting diode chip for backlight unit process and more can grasp the reason that causes bad light-emitting diode chip for backlight unit, and then make the yield of light-emitting diode chip for backlight unit increase.
The above only is a preferable possible embodiments of the present utility model, and is non-so limit to claim of the present utility model, so the equivalence techniques that uses the utility model instructions and accompanying drawing content to do such as changes, all is contained in the scope of the present utility model.
Claims (1)
1. chip appearance delection device, its quantity and position in order to detect the bad light-emitting diode chip for backlight unit on the wafer, this wafer is made up of a plurality of light-emitting diode chip for backlight unit, and this wafer is placed on the detection platform and detects, it is characterized in that this chip appearance delection device comprises:
One spectroscope, it is arranged at the top of this detection platform and this wafer;
One can adjust first light source of emission wavelength along with the type of described light-emitting diode chip for backlight unit, and it is arranged at by this spectroscopical side;
One secondary light source, it is arranged in this detection platform and the below of this wafer;
One optical filter, it is arranged at this spectroscopical top;
One image sensing element, it is arranged at the top of this optical filter; And
One in order to calculate bad light-emitting diode chip for backlight unit data computing device, and it is electrically connected on this image sensing element, and wherein these bad light-emitting diode chip for backlight unit data comprise the quantity of bad light-emitting diode chip for backlight unit and the position of bad light-emitting diode chip for backlight unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201985489U CN201724908U (en) | 2010-05-14 | 2010-05-14 | Chip appearance inspection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201985489U CN201724908U (en) | 2010-05-14 | 2010-05-14 | Chip appearance inspection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201724908U true CN201724908U (en) | 2011-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010201985489U Expired - Fee Related CN201724908U (en) | 2010-05-14 | 2010-05-14 | Chip appearance inspection device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102680208A (en) * | 2011-03-15 | 2012-09-19 | 隆达电子股份有限公司 | Grain inspection machine with multiple wave domain retrieval light sources |
| CN103887403A (en) * | 2012-12-24 | 2014-06-25 | 鸿富锦精密工业（深圳）有限公司 | Correction method of light-emitting module |
| CN104502360A (en) * | 2014-12-25 | 2015-04-08 | 中国科学院半导体研究所 | Chip appearance defect detection system |
| CN105372247A (en) * | 2015-10-28 | 2016-03-02 | 重庆远创光电科技有限公司 | Frame for automatic chip detection |
| CN105388159A (en) * | 2015-12-14 | 2016-03-09 | 重庆远创光电科技有限公司 | Chip image acquisition apparatus |
| CN105445273A (en) * | 2015-12-14 | 2016-03-30 | 重庆远创光电科技有限公司 | Rapid acquisition apparatus for chip image |
| CN105572142A (en) * | 2015-12-14 | 2016-05-11 | 重庆远创光电科技有限公司 | Dual-camera chip detection system |
| CN105572135A (en) * | 2015-12-14 | 2016-05-11 | 重庆远创光电科技有限公司 | System for performing qualification detection on eutectic soldering on air-conditioner chips |
| CN109225936A (en) * | 2018-10-24 | 2019-01-18 | 佛山市多谱光电科技有限公司 | A kind of AOI automatic checkout equipment |
| CN110739246A (en) * | 2019-09-03 | 2020-01-31 | 福建晶安光电有限公司 | method for measuring warping degree of wafer |
-
2010
- 2010-05-14 CN CN2010201985489U patent/CN201724908U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102680208A (en) * | 2011-03-15 | 2012-09-19 | 隆达电子股份有限公司 | Grain inspection machine with multiple wave domain retrieval light sources |
| CN103887403A (en) * | 2012-12-24 | 2014-06-25 | 鸿富锦精密工业（深圳）有限公司 | Correction method of light-emitting module |
| CN104502360A (en) * | 2014-12-25 | 2015-04-08 | 中国科学院半导体研究所 | Chip appearance defect detection system |
| CN105372247A (en) * | 2015-10-28 | 2016-03-02 | 重庆远创光电科技有限公司 | Frame for automatic chip detection |
| CN105388159A (en) * | 2015-12-14 | 2016-03-09 | 重庆远创光电科技有限公司 | Chip image acquisition apparatus |
| CN105445273A (en) * | 2015-12-14 | 2016-03-30 | 重庆远创光电科技有限公司 | Rapid acquisition apparatus for chip image |
| CN105572142A (en) * | 2015-12-14 | 2016-05-11 | 重庆远创光电科技有限公司 | Dual-camera chip detection system |
| CN105572135A (en) * | 2015-12-14 | 2016-05-11 | 重庆远创光电科技有限公司 | System for performing qualification detection on eutectic soldering on air-conditioner chips |
| CN109225936A (en) * | 2018-10-24 | 2019-01-18 | 佛山市多谱光电科技有限公司 | A kind of AOI automatic checkout equipment |
| CN110739246A (en) * | 2019-09-03 | 2020-01-31 | 福建晶安光电有限公司 | method for measuring warping degree of wafer |
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