CN201695105U - 一种次单晶硅铸锭炉的双腔体隔热笼 - Google Patents
一种次单晶硅铸锭炉的双腔体隔热笼 Download PDFInfo
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- CN201695105U CN201695105U CN2010201956363U CN201020195636U CN201695105U CN 201695105 U CN201695105 U CN 201695105U CN 2010201956363 U CN2010201956363 U CN 2010201956363U CN 201020195636 U CN201020195636 U CN 201020195636U CN 201695105 U CN201695105 U CN 201695105U
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102330143A (zh) * | 2011-09-22 | 2012-01-25 | 浙江精功新能源有限公司 | 单晶硅铸锭的制造工艺和铸锭炉热场结构 |
WO2012171308A1 (zh) * | 2011-06-15 | 2012-12-20 | 安阳市凤凰光伏科技有限公司 | 铸造法生产类似单晶硅的方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012171308A1 (zh) * | 2011-06-15 | 2012-12-20 | 安阳市凤凰光伏科技有限公司 | 铸造法生产类似单晶硅的方法 |
CN102330143A (zh) * | 2011-09-22 | 2012-01-25 | 浙江精功新能源有限公司 | 单晶硅铸锭的制造工艺和铸锭炉热场结构 |
CN102330143B (zh) * | 2011-09-22 | 2013-10-02 | 浙江精功新能源有限公司 | 单晶硅铸锭的制造工艺和铸锭炉热场结构 |
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Owner name: HANGZHOU JINGGONG MECHANICAL + ELECTRICAL RESEARCH Free format text: FORMER NAME: SHAOXING JINGGONG ELECTROMECHANICAL RESEARCH INSTITUTE CO., LTD. |
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Address after: 310018, No. 2, No. 9, No. 17, Hangzhou economic and Technological Development Zone, Hangzhou, Zhejiang, Jianggan District Province, fourth floors Co-patentee after: Jinghaiyang Semi-Conducting Material (Donghai) Co., Ltd. Patentee after: Hangzhou Jinggong Mechanical & Electrical Research Institute Co., Ltd. Address before: Jianhu road 312030 in Zhejiang province Shaoxing city Keqiao Economic Development Zone No. 1809 Co-patentee before: Jinghaiyang Semi-Conducting Material (Donghai) Co., Ltd. Patentee before: Shaoxing Jinggong Electronic Research Institute Co., Ltd. |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 310018, No. 2, No. 9, No. 17, Hangzhou economic and Technological Development Zone, Hangzhou, Zhejiang, Jianggan District Province, fourth floors Patentee after: Mstar Technology Ltd in Hangzhou Patentee after: Jinghaiyang Semi-Conducting Material (Donghai) Co., Ltd. Address before: 310018, No. 2, No. 9, No. 17, Hangzhou economic and Technological Development Zone, Hangzhou, Zhejiang, Jianggan District Province, fourth floors Patentee before: Hangzhou Jinggong Mechanical & Electrical Research Institute Co., Ltd. Patentee before: Jinghaiyang Semi-Conducting Material (Donghai) Co., Ltd. |
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Granted publication date: 20110105 |
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