CN201667336U - N-type lateral insulated-gate bipolar device for reducing hot carrier effect - Google Patents
N-type lateral insulated-gate bipolar device for reducing hot carrier effect Download PDFInfo
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- CN201667336U CN201667336U CN2010201647143U CN201020164714U CN201667336U CN 201667336 U CN201667336 U CN 201667336U CN 2010201647143 U CN2010201647143 U CN 2010201647143U CN 201020164714 U CN201020164714 U CN 201020164714U CN 201667336 U CN201667336 U CN 201667336U
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Abstract
An N-type lateral insulated-gate bipolar device for reducing the hot carrier effect comprises a P-type substrate, wherein buried oxide is arranged on the P-type substrate; a P-type epitaxial layer is arranged on the buried oxide; an N-type well and a P-type well region are arranged on the P-type epitaxial layer; an N-type buffer well is arranged on the N-type well; a P-type anode area is arranged on the N-type buffer well; an N-type cathode area and a P-type body contact area are arranged on the P-type well region; and a field oxide layer, a metal layer, a gate oxide layer, a polysilicon gate and an oxide layer are arranged on the upper surface of the device. The device is characterized in that a P-type buried layer is arranged at the lower part of the P-type well region and above the buried oxide; and the P-type buried layer is inserted in a part of the P-type epitaxial layer and forms a reverse L-type P area with the P-type well region together. By adopting the structure, the hole current of the device is guided to the bottom, the ion generation rate and longitudinal electric field of a channel region of the device are reduced, and the temperature of thermion is reduced at the same time, thereby effectively restraining the hot carrier effect of the device.
Description
Technical field
The utility model relates to field of high voltage power semiconductor devices, is the N type lateral insulated gate bipolar device that is applicable to the reduction hot carrier's effect of high-voltage applications about a kind of.
Background technology
Power semiconductor is the basic electronic component that power electronic system carries out energy control and conversion, the semiconductor power device that constantly develops into of power electronic technology has been opened up application fields, and characteristics such as the conducting resistance of semiconductor power device and puncture voltage have then determined key propertys such as the efficient, power consumption of power electronic system.
Along with the day by day enhancing of people to modernized life requirement, the performance of power integrated circuit product more and more receives publicity, and wherein the life-span of power integrated circuit more and more becomes one of main performance index.The factor of decision power integrated circuit size in useful life is except the circuit structure of power integrated circuit own, design and manufacturing process that circuit adopted, and the power device performance that is adopted is the key of power integrated circuit overall performance.
Recently the silicon-on-insulator manufacturing technology is increasingly mature, with compare by the chip of traditional build substrate silicon wafer production, based on insulating barrier in the chip structure of silicon-on-insulator movable silicon film and build substrate silicon substrate are separated, therefore large-area PN junction will be replaced by dielectric isolation.Various traps can extend downward buried oxide, have effectively reduced leakage current and junction capacitance.Its result must be the speed of service that has increased substantially chip, has widened the temperature range of device work.Along with the appearance of the lateral double-diffused metal-oxide-semiconductor transistor of silicon-on-insulator, it obtains extensively showing appreciation for somebody of academia and industrial quarters with the incomparable advantage of common lateral double-diffused metal-oxide-semiconductor transistor (low in energy consumption, antijamming capability is strong, integration density is high, speed is fast, eliminate latch-up).
Insulated gate bipolar transistor combines the advantage of bipolar transistor and isolated gate FET device, and the little and saturation pressure of driving power reduces.Be fit to very much to be applied to direct voltage and be fields such as 600V and above converter system such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, traction transmission.
At present, the main performance of power semiconductor is by puncture voltage, and conducting resistance gains and weighs.In addition, because power semiconductor is operated under the very high voltage, hot carrier's effect can cause the threshold voltage of device, conducting resistance, degeneration in various degree appears in performance parameters such as gain along with the increase of service time, have a strong impact on the useful life of device.How to reduce hot carrier's effect and become the research power semiconductor, improve one of important topic of device lifetime.
The utility model is exactly the silicon-on-insulator lateral insulated gate bipolar transistor of the improvement structure that proposes at this problem.
The utility model content
The utility model provides a kind of N type lateral insulated gate bipolar device that can effectively reduce hot carrier's effect.
The utility model adopts following technical scheme:
A kind of N type lateral insulated gate bipolar device that reduces hot carrier's effect, comprise: P type substrate, on P type substrate, be provided with and bury oxygen, be provided with P type epitaxial loayer on the oxygen burying, on P type epitaxial loayer, be provided with N type trap and P well region, on N type trap, be provided with N type buffering trap, on N type buffering trap, be provided with P type Yang Qu, on the P well region, be provided with cloudy district of N type and P type body contact zone, be provided with gate oxide on the surface of P type epitaxial region and gate oxide extends to N type well region from P type epitaxial region, at P type Yang Qu, P type body contact zone, zone beyond cloudy district of N type and the gate oxide is provided with field oxide, be provided with the surface that polysilicon gate and polysilicon gate extend to field oxide at the upper surface of gate oxide, at field oxide, P type body contact zone, the cloudy district of N type, the surface of polysilicon gate and P type Yang Qu is provided with oxide layer, at P type Yang Qu, P type body contact zone, be connected with metal level respectively on cloudy district of N type and the polysilicon gate.It is characterized in that at the P well region the bottom, bury and be provided with p type buried layer on the oxygen, insert a P type epitaxial loayer part, constitute reverse " L " type P district with the P well region is whole.
Compared with prior art, the utlity model has following advantage:
(1) the utility model device is made the p type buried layer 14 that a concentration is not less than P well region 13 in the bottom of P well region 13, can effectively the path of hole current be guided to the device bottom, flows into P type body contact zone 11 (referring to accompanying drawings 4) from P well region 13 then.And the hole path of current is below channel region and from the very near zone of channel region (referring to accompanying drawing 3) in general device architecture.Thereby the utility model structure can effectively reduce the ion generation rate (referring to accompanying drawing 5) of channel region, thereby reduces the dosage that hot carrier is injected.
(2) benefit of the utility model device can effectively reduce the peak value (referring to accompanying drawing 6) of the longitudinal electric field of channel region after being current path guided to device bottom, thereby reduces the possibility that hot carrier is injected oxide layer by the injection energy that lowers hot carrier.
(3) benefit of the utility model device is obviously to reduce carrier temperature (referring to accompanying drawing 7), thereby has suppressed the generation of device hot carrier's effect effectively.
(4) the utility model device can make device threshold voltage and component characteristic parameters such as conducting resistance and puncture voltage not change by position and the concentration that p type buried layer 14 reasonably is set the hot carrier degradation life-span of the device that prolongs.
(5) p type buried layer of the utility model device can form by high-octane boron implantation annealing, does not introduce extra technical process, and is compatible fully with the existing integrated circuits manufacturing process.
Description of drawings
Fig. 1 is a profile, illustrates the general horizontal high voltage gate dielectric bipolar device of N type cross-section structure.
Fig. 2 is a profile, illustrates the cross-section structure of the horizontal high voltage gate dielectric bipolar device of the improved N type of the utility model.
Fig. 3 is the current path schematic diagram of general device architecture.
Fig. 4 is the current path schematic diagram of the utility model device, and the current path that illustrates the utility model device flows along the device bottom.
Fig. 5 is the ion generation rate of the utility model device channel region and the ion generation rate comparison diagram of general structure devices channel region.The ion generation rate of the utility model device channel region has tangible reduction as can be seen.
Fig. 6 is the electric field of the utility model device channel region and the electric field comparison diagram of general structure devices channel region.The longitudinal electric field peak value of the utility model device channel region has tangible reduction as can be seen.
Fig. 7 is the temperature of the utility model structure electronics and the temperature comparison diagram of general structure devices electronics.The temperature of the utility model device electronics has obvious reduction as can be seen.
Embodiment
Below in conjunction with accompanying drawing 1, the utility model is elaborated, a kind of N type lateral insulated gate bipolar device that reduces hot carrier's effect, comprise: P type substrate 1, on P type substrate 1, be provided with and bury oxygen 2, be provided with P type epitaxial loayer 3 on the oxygen 2 burying, on P type epitaxial loayer 3, be provided with N type trap 4 and P well region 13, on N type trap 4, be provided with N type buffering trap 5, on N type buffering trap 5, be provided with P type sun district 6, on P well region 13, be provided with cloudy district 12 of N type and P type body contact zone 11, be provided with gate oxide 10 on the surface of P type epitaxial region 3 and gate oxide 10 extends to N type well region 4 from P type epitaxial region 3, in P type sun district 6, P type body contact zone 11, zone beyond cloudy district 12 of N type and the gate oxide 10 is provided with field oxide 8, be provided with the surface that polysilicon gate 9 and polysilicon gate 9 extend to field oxide 8 at the upper surface of gate oxide 10, at field oxide 8, P type body contact zone 11, the cloudy district 12 of N type, the surface in polysilicon gate 9 and P type sun district 6 is provided with oxide layer 15, in P type sun district 6, P type body contact zone 11, be connected with metal level 7 respectively on cloudy district 12 of N type and the polysilicon gate 9.It is characterized in that at P well region 13 the bottom, bury and be provided with p type buried layer 14 on the oxygen 2, insert P type epitaxial loayer 3 parts, constitute reverse " L " type P district with P well region 13 is whole.
The width of p type buried layer 14 is 1.5 to 2 times of P well region 13 width in the described feature structure.
The height of p type buried layer 14 is 0.3 to 0.5 times of P well region 13 height in the described feature structure.
The doping content of p type buried layer 14 is not less than P well region 13 doping contents in the described feature structure.
P type buried layer 14 can form by the mode that energetic ion injects with buried layer in the described feature structure.
The utility model adopts following method to prepare:
The first step is made needed p type buried layer at soi layer, gets silicon on the P type epitaxial insulator, and it is carried out prerinse. and inject by high-energy boron ion, form a p type buried layer, recover lattice damage through high annealing in the bottom of epitaxial loayer.。
In second step, ensuing is the making of the landscape insulation bar double-pole-type transistor of routine, and it is included on the P type extension and prepares N moldeed depth trap by injecting phosphonium ion, forms the diffusion region through high annealing.Make the P well region of high concentration again, N type resilient coating, the growth of field oxide, gate oxidation, deposit polysilicon afterwards, etching forms grid, makes heavily doped Yang Qu He Yin district and P type body contact zone again.Deposit silicon dioxide, depositing metal behind the etching electrode contact zone.Etching metal and extraction electrode carry out Passivation Treatment at last.
Claims (4)
1. N type lateral insulated gate bipolar device that reduces hot carrier's effect, comprise: P type substrate (1), on P type substrate (1), be provided with and bury oxygen (2), be provided with P type epitaxial loayer (3) on the oxygen (2) burying, P type epitaxial loayer (3) left side is provided with N type trap (4), the right is provided with P well region (13), still have P type epitaxial loayer (3) to isolate between N type trap (4) and the P well region (13), on N type trap (4), be provided with N type buffering trap (5), on N type buffering trap (5), be provided with P type Yang Qu (6), on P well region (13), be provided with the cloudy district of N type (12) and P type body contact zone (11), be provided with gate oxide (10) and gate oxide (10) on the surface of P type epitaxial loayer (3) and begin to extend to N type trap (4) from the cloudy district of N type (12), at P type Yang Qu (6), P type body contact zone (11), cloudy district of N type (12) and gate oxide (10) silicon surface region in addition are provided with field oxide (8), be provided with the surface that polysilicon gate (9) and polysilicon gate (9) extend to the field oxide (8) on its left side N type trap (4) at the upper surface of gate oxide (10), at P type Yang Qu (6), field oxide (8), polysilicon gate (9), P type body contact zone (11), the surface in the cloudy district of N type (12) is provided with oxide layer (15), at P type Yang Qu (6), P type body contact zone (11), be connected with metal level (7) respectively on cloudy district of N type (12) and the polysilicon gate (9), wherein P type body contact zone (11), what connection was gone up in the cloudy district of N type (12) is same metal level (7), it is characterized in that bottom in P well region (13), bury and be provided with p type buried layer (14) on the oxygen (2), insert P type epitaxial loayer (a 3) part, with reverse " L " the type P district of the whole formation of P well region (13).
2. the N type lateral insulated gate bipolar device of reduction hot carrier's effect according to claim 1, the width that it is characterized in that p type buried layer (14) are 1.5 to 2 times of P well region (13) width.
3. the N type lateral insulated gate bipolar device of reduction hot carrier's effect according to claim 1, the height that it is characterized in that p type buried layer (14) are 0.3 to 0.5 times of P well region (13) height.
4. the N type lateral insulated gate bipolar device of reduction hot carrier's effect according to claim 1 is characterized in that the concentration of p type buried layer (14) is not less than the concentration of P well region (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201647143U CN201667336U (en) | 2010-04-13 | 2010-04-13 | N-type lateral insulated-gate bipolar device for reducing hot carrier effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201647143U CN201667336U (en) | 2010-04-13 | 2010-04-13 | N-type lateral insulated-gate bipolar device for reducing hot carrier effect |
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| CN201667336U true CN201667336U (en) | 2010-12-08 |
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| CN2010201647143U Expired - Fee Related CN201667336U (en) | 2010-04-13 | 2010-04-13 | N-type lateral insulated-gate bipolar device for reducing hot carrier effect |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325820A (en) * | 2013-06-14 | 2013-09-25 | 四川长虹电器股份有限公司 | Double-gate SOI-LIGBT device with P-type buried layer |
| CN104347367A (en) * | 2013-07-30 | 2015-02-11 | 无锡华润上华半导体有限公司 | Method for improving large electric leakage during gate-oxide breakdown |
-
2010
- 2010-04-13 CN CN2010201647143U patent/CN201667336U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325820A (en) * | 2013-06-14 | 2013-09-25 | 四川长虹电器股份有限公司 | Double-gate SOI-LIGBT device with P-type buried layer |
| CN104347367A (en) * | 2013-07-30 | 2015-02-11 | 无锡华润上华半导体有限公司 | Method for improving large electric leakage during gate-oxide breakdown |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101208 Termination date: 20120413 |