CN101834202B - N-type lateral insulated gate bipolar device capable of reducing hot carrier effect - Google Patents
N-type lateral insulated gate bipolar device capable of reducing hot carrier effect Download PDFInfo
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- CN101834202B CN101834202B CN2010101465099A CN201010146509A CN101834202B CN 101834202 B CN101834202 B CN 101834202B CN 2010101465099 A CN2010101465099 A CN 2010101465099A CN 201010146509 A CN201010146509 A CN 201010146509A CN 101834202 B CN101834202 B CN 101834202B
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Abstract
The invention relates to an N-type lateral insulated gate bipolar device capable of reducing hot carrier effect. The N-type lateral insulated gate bipolar device capable of reducing the hot carrier effect comprises a P-type substrate; buried oxide is arranged on the P-type substrate, and is provided with a P-type epitaxial layer; the P-type epitaxial layer is provided with an N-type well and a P-well area, the N-type well is provided with an N-type buffering well which is provided with a P-type positive area, and the P-well area is provided with an N-type negative area and a P-type body contact area; and a field oxide layer, a metal layer, a gate oxide layer, a polysilicon gate and an oxide layer are arranged on the upper surface of the device. The device is characterized in that a P-type buried layer is arranged below the P-well area and above the buried oxide and is inserted into part of the P-type epitaxial layer to form a reversed L-type P-area together with the whole P-well area, and the structure can lead the hole current of the device to the bottom part so as to reduce the iron generation rate and longitudinal electric field in the channel area of the device and lower the temperature of thermion, thereby effectively inhibiting the hot carrier effect of the device.
Description
Technical field
The present invention relates to field of high voltage power semiconductor devices, is the N type lateral insulated gate bipolar device that is applicable to the reduction hot carrier's effect of high-voltage applications about a kind of.
Background technology
Power semiconductor is the basic electronic component that power electronic system carries out energy control and conversion, the semiconductor power device that constantly develops into of power electronic technology has been opened up application fields, and characteristics such as the conducting resistance of semiconductor power device and puncture voltage have then determined key propertys such as the efficient, power consumption of power electronic system.
Along with the day by day enhancing of people to modernized life requirement, the performance of power integrated circuit product more and more receives publicity, and wherein the life-span of power integrated circuit more and more becomes one of main performance index.The factor of decision power integrated circuit size in useful life is except the circuit structure of power integrated circuit own, design and manufacturing process that circuit adopted, and the power device performance that is adopted is the key of power integrated circuit overall performance.
Recently the silicon-on-insulator manufacturing technology is increasingly mature, with compare by the chip of traditional build substrate silicon wafer production, based on insulating barrier in the chip structure of silicon-on-insulator movable silicon film and build substrate silicon substrate are separated, therefore large-area PN junction will be replaced by dielectric isolation.Various traps can extend downward buried oxide, have effectively reduced leakage current and junction capacitance.Its result must be the speed of service that has increased substantially chip, has widened the temperature range of device work.Along with the appearance of the lateral double-diffused metal-oxide-semiconductor transistor of silicon-on-insulator, it obtains extensively showing appreciation for somebody of academia and industrial quarters with the incomparable advantage of common lateral double-diffused metal-oxide-semiconductor transistor (low in energy consumption, antijamming capability is strong, integration density is high, speed is fast, eliminate latch-up).
Insulated gate bipolar transistor combines the advantage of bipolar transistor and isolated gate FET device, and the little and saturation pressure of driving power reduces.Be fit to very much to be applied to direct voltage and be fields such as 600V and above converter system such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, traction transmission.
At present, the main performance of power semiconductor is by puncture voltage, and conducting resistance gains and weighs.In addition, because power semiconductor is operated under the very high voltage, hot carrier's effect can cause the threshold voltage of device, conducting resistance, degeneration in various degree appears in performance parameters such as gain along with the increase of service time, have a strong impact on the useful life of device.How to reduce hot carrier's effect and become the research power semiconductor, improve one of important topic of device lifetime.
The present invention is exactly the silicon-on-insulator lateral insulated gate bipolar transistor of the improvement structure that proposes at this problem.
Summary of the invention
The invention provides a kind of N type lateral insulated gate bipolar device that can effectively reduce hot carrier's effect.
The present invention adopts following technical scheme:
A kind of N type lateral insulated gate bipolar device that reduces hot carrier's effect, comprise: P type substrate, on P type substrate, be provided with and bury oxygen, be provided with P type epitaxial loayer on the oxygen burying, on P type epitaxial loayer, be provided with N type trap and P well region, on N type trap, be provided with N type buffering trap, on N type buffering trap, be provided with P type Yang Qu, on the P well region, be provided with cloudy district of N type and P type body contact zone, be provided with gate oxide on the surface of P type epitaxial region and gate oxide extends to N type well region from P type epitaxial region, at P type Yang Qu, P type body contact zone, zone beyond cloudy district of N type and the gate oxide is provided with field oxide, be provided with the surface that polysilicon gate and polysilicon gate extend to field oxide at the upper surface of gate oxide, at field oxide, P type body contact zone, the cloudy district of N type, the surface of polysilicon gate and P type Yang Qu is provided with oxide layer, at P type Yang Qu, P type body contact zone, be connected with metal level respectively on cloudy district of N type and the polysilicon gate.It is characterized in that at the P well region the bottom, bury and be provided with p type buried layer on the oxygen, insert a P type epitaxial loayer part, constitute reverse " L " type P district with the P well region is whole.
Compared with prior art, the present invention has following advantage:
(1) device of the present invention is made the p type buried layer 14 that a concentration is not less than P well region 13 in the bottom of P well region 13, can effectively the path of hole current be guided to the device bottom, flows into P type body contact zone 11 (referring to accompanying drawings 4) from P well region 13 then.And the hole path of current is below channel region and from the very near zone of channel region (referring to accompanying drawing 3) in general device architecture.Thereby structure of the present invention can effectively reduce the ion generation rate (referring to accompanying drawing 5) of channel region, thereby reduces the dosage that hot carrier is injected.
(2) benefit of device of the present invention can effectively reduce the peak value (referring to accompanying drawing 6) of the longitudinal electric field of channel region after being current path guided to device bottom, thereby reduces the possibility that hot carrier is injected oxide layer by the injection energy that lowers hot carrier.
(3) benefit of device of the present invention is obviously to reduce carrier temperature (referring to accompanying drawing 7), thereby has suppressed the generation of device hot carrier's effect effectively.
(4) device of the present invention can make device threshold voltage and component characteristic parameters such as conducting resistance and puncture voltage not change by position and the concentration that p type buried layer 14 reasonably is set the hot carrier degradation life-span of the device that prolongs.
(5) p type buried layer of device of the present invention can form by high-octane boron implantation annealing, does not introduce extra technical process, and is compatible fully with the existing integrated circuits manufacturing process.
Description of drawings
Fig. 1 is a profile, illustrates the general horizontal high voltage gate dielectric bipolar device of N type cross-section structure.
Fig. 2 is a profile, illustrates the cross-section structure of the horizontal high voltage gate dielectric bipolar device of the improved N type of the present invention.
Fig. 3 is the current path schematic diagram of general device architecture.
Fig. 4 is the current path schematic diagram of device of the present invention, and the current path that illustrates device of the present invention flows along the device bottom.
Fig. 5 is the ion generation rate of device channel region of the present invention and the ion generation rate comparison diagram of general structure devices channel region.The ion generation rate of device channel region of the present invention has tangible reduction as can be seen.
Fig. 6 is the electric field of device channel region of the present invention and the electric field comparison diagram of general structure devices channel region.The longitudinal electric field peak value of device channel region of the present invention has tangible reduction as can be seen.
Fig. 7 is the temperature of structure electronics of the present invention and the temperature comparison diagram of general structure devices electronics.The temperature of device electronics of the present invention as can be seen has obvious reduction.
Embodiment
Below in conjunction with accompanying drawing 1, the present invention is elaborated, a kind of N type lateral insulated gate bipolar device that reduces hot carrier's effect, comprise: P type substrate 1, on P type substrate 1, be provided with and bury oxygen 2, be provided with P type epitaxial loayer 3 on the oxygen 2 burying, on P type epitaxial loayer 3, be provided with N type trap 4 and P well region 13, on N type trap 4, be provided with N type buffering trap 5, on N type buffering trap 5, be provided with P type sun district 6, on P well region 13, be provided with cloudy district 12 of N type and P type body contact zone 11, be provided with gate oxide 10 on the surface of P type epitaxial region 3 and gate oxide 10 extends to N type well region 4 from P type epitaxial region 3, in P type sun district 6, P type body contact zone 11, zone beyond cloudy district 12 of N type and the gate oxide 10 is provided with field oxide 8, be provided with the surface that polysilicon gate 9 and polysilicon gate 9 extend to field oxide 8 at the upper surface of gate oxide 10, at field oxide 8, P type body contact zone 11, the cloudy district 12 of N type, the surface in polysilicon gate 9 and P type sun district 6 is provided with oxide layer 15, in P type sun district 6, P type body contact zone 11, be connected with metal level 7 respectively on cloudy district 12 of N type and the polysilicon gate 9.It is characterized in that at P well region 13 the bottom, bury and be provided with p type buried layer 14 on the oxygen 2, insert P type epitaxial loayer 3 parts, constitute reverse " L " type P district with P well region 13 is whole.
The width of p type buried layer 14 is 1.5 to 2 times of P well region 13 width in the described feature structure.
The height of p type buried layer 14 is 0.3 to 0.5 times of P well region 13 height in the described feature structure.
The doping content of p type buried layer 14 is not less than P well region 13 doping contents in the described feature structure.
P type buried layer 14 can form by the mode that energetic ion injects with buried layer in the described feature structure.
The present invention adopts following method to prepare:
The first step is made needed p type buried layer at soi layer, gets silicon on the P type epitaxial insulator, and it is carried out prerinse. and inject by high-energy boron ion, form a p type buried layer, recover lattice damage through high annealing in the bottom of epitaxial loayer.。
In second step, ensuing is the making of the landscape insulation bar double-pole-type transistor of routine, and it is included on the P type extension and prepares N moldeed depth trap by injecting phosphonium ion, forms the diffusion region through high annealing.Make the P well region of high concentration again, N type resilient coating, the growth of field oxide, gate oxidation, deposit polysilicon afterwards, etching forms grid, makes heavily doped Yang Qu He Yin district and P type body contact zone again.Deposit silicon dioxide, depositing metal behind the etching electrode contact zone.Etching metal and extraction electrode carry out Passivation Treatment at last.
Claims (1)
1. N type lateral insulated gate bipolar device that reduces hot carrier's effect, comprise: P type substrate (1), on P type substrate (1), be provided with and bury oxygen (2), be provided with P type epitaxial loayer (3) on the oxygen (2) burying, P type epitaxial loayer (3) left side is provided with N type trap (4), the right is provided with P well region (13), still have P type epitaxial loayer (3) to isolate between N type trap (4) and the P well region (13), on N type trap (4), be provided with N type buffering trap (5), on N type buffering trap (5), be provided with P type Yang Qu (6), on P well region (13), be provided with the cloudy district of N type (12) and P type body contact zone (11), be provided with gate oxide (10) and gate oxide (10) on the surface of P type epitaxial loayer (3) and begin to extend to N type trap (4) from the cloudy district of N type (12), at P type Yang Qu (6), P type body contact zone (11), cloudy district of N type (12) and gate oxide (10) silicon surface region in addition are provided with field oxide (8), be provided with the surface that polysilicon gate (9) and polysilicon gate (9) extend to the field oxide (8) on its left side N type trap (4) at the upper surface of gate oxide (10), at P type Yang Qu (6), field oxide (8), polysilicon gate (9), P type body contact zone (11), the surface in the cloudy district of N type (12) is provided with oxide layer (15), at P type Yang Qu (6), P type body contact zone (11), be connected with metal level (7) respectively on cloudy district of N type (12) and the polysilicon gate (9), wherein P type body contact zone (11), what connection was gone up in the cloudy district of N type (12) is same metal level (7), it is characterized in that bottom in P well region (13), bury and be provided with p type buried layer (14) on the oxygen (2), insert P type epitaxial loayer (a 3) part, with reverse " L " the type P district of the whole formation of P well region (13), the width of p type buried layer (14) is 1.5 to 2 times of P well region (13) width, the height of p type buried layer (14) is 0.3 to 0.5 times of P well region (13) height, and the concentration of p type buried layer (14) is not less than the concentration of P well region (13).
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| CN2010101465099A CN101834202B (en) | 2010-04-13 | 2010-04-13 | N-type lateral insulated gate bipolar device capable of reducing hot carrier effect |
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| CN2010101465099A CN101834202B (en) | 2010-04-13 | 2010-04-13 | N-type lateral insulated gate bipolar device capable of reducing hot carrier effect |
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| CN101834202B true CN101834202B (en) | 2011-11-16 |
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Families Citing this family (5)
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| CN102945858B (en) * | 2012-11-29 | 2015-06-10 | 杭州士兰集成电路有限公司 | IGBT (Insulated Gate Bipolar Transistor) device with field stop buffer layer and manufacture method of IGBT device |
| DE102013018789A1 (en) * | 2012-11-29 | 2014-06-05 | Infineon Technologies Ag | Controlling light-generated charge carriers |
| CN107425063B (en) * | 2017-07-10 | 2020-04-24 | 东南大学 | Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things |
| CN107293584B (en) * | 2017-07-10 | 2020-04-24 | 东南大学 | Gallium arsenide-based HBT device with thermoelectric conversion function and oriented to Internet of things |
| CN110010678A (en) * | 2018-01-04 | 2019-07-12 | 中兴通讯股份有限公司 | Lateral insulated gate bipolar transistor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3057226B2 (en) * | 1997-10-09 | 2000-06-26 | 琉球大学長 | A therapeutic agent for leishmaniasis containing a glucopyranose derivative as an active ingredient |
| US6661059B1 (en) * | 2002-09-30 | 2003-12-09 | Koninklijke Philips Electronics N.V. | Lateral insulated gate bipolar PMOS device |
| CN1845332A (en) * | 2006-03-21 | 2006-10-11 | 电子科技大学 | SOI structure with low k dielectric buried layer and its power device |
| CN101419981A (en) * | 2008-12-04 | 2009-04-29 | 电子科技大学 | Trench gate SOI LIGBT device |
| CN101431096A (en) * | 2008-12-11 | 2009-05-13 | 电子科技大学 | SOILIGBT device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0357226A (en) * | 1989-07-25 | 1991-03-12 | Mitsubishi Electric Corp | Insulated-gate transistor |
| WO2002043157A1 (en) * | 2000-11-21 | 2002-05-30 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor device and its manufacturing method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3057226B2 (en) * | 1997-10-09 | 2000-06-26 | 琉球大学長 | A therapeutic agent for leishmaniasis containing a glucopyranose derivative as an active ingredient |
| US6661059B1 (en) * | 2002-09-30 | 2003-12-09 | Koninklijke Philips Electronics N.V. | Lateral insulated gate bipolar PMOS device |
| CN1845332A (en) * | 2006-03-21 | 2006-10-11 | 电子科技大学 | SOI structure with low k dielectric buried layer and its power device |
| CN101419981A (en) * | 2008-12-04 | 2009-04-29 | 电子科技大学 | Trench gate SOI LIGBT device |
| CN101431096A (en) * | 2008-12-11 | 2009-05-13 | 电子科技大学 | SOILIGBT device |
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