CN201634794U - Coating quartz crucible for producing solar silicon single-crystal - Google Patents

Coating quartz crucible for producing solar silicon single-crystal Download PDF

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Publication number
CN201634794U
CN201634794U CN2010201385992U CN201020138599U CN201634794U CN 201634794 U CN201634794 U CN 201634794U CN 2010201385992 U CN2010201385992 U CN 2010201385992U CN 201020138599 U CN201020138599 U CN 201020138599U CN 201634794 U CN201634794 U CN 201634794U
Authority
CN
China
Prior art keywords
quartz crucible
crystal
coating
crucible
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010201385992U
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Chinese (zh)
Inventor
池金林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU HUAER QUARTZ MATERIALS CO., LTD.
Original Assignee
YANGZHOU HUAER PHOTOELECTRON MATERIAL CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN2010201385992U priority Critical patent/CN201634794U/en
Application granted granted Critical
Publication of CN201634794U publication Critical patent/CN201634794U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a coating quartz crucible for producing solar silicon single-crystal, comprising a quartz crucible body, wherein the internal wall of the quartz crucible body is provided with a layer of barium carbonate coating. In the utility model, the service life of the quartz crucible can be drastically prolonged, and the finished-product rate of the long crystal can be effectively improved. Furthermore, a layer of fine-grained quartzite crystal is formed on the internal wall of the quartz crucible, thus increasing the strength of the quartz crucible and reducing the phenomenon of high-temperature softening.

Description

Solar energy silicon single crystal production coating quartz crucible
Technical field
The utility model relates to a kind of solar power silicon production quartz crucible, specifically a kind of solar energy silicon single crystal production coating quartz crucible.
Background technology
Quartz crucible is that one of element is wanted in the life that solar energy silicon single crystal is produced, and it not only influences long brilliant yield rate, also can influence the electric property of monocrystalline.Solar energy silicon single crystal production is that blocky high-purity polycrystalline silicon is placed quartz crucible, and heating makes its fusing, and the seed crystal that utilizes silicon single-crystal the to make seeding of sowing, and reaches the purpose of getting rid of dislocation, thereby draws out dislocation-free single crystal.Because chemical reaction can take place in molten silicon melt and quartz crucible under hot environment, inner wall of quartz crucible is produced corrode, not only reduced the resistant to elevated temperatures ability of quartz crucible, also influenced the purity of silicon single-crystal simultaneously.
Summary of the invention
The purpose of this utility model is to overcome the prior art deficiency, and a kind of solar energy silicon single crystal production coating quartz crucible is provided.
The technical solution adopted in the utility model: a kind of solar energy silicon single crystal production coating quartz crucible, comprise quartz crucible crucible body, the inwall of described quartz crucible crucible body is provided with one deck barium carbonate coating.
The utility model is coated with the hydrated barta layer that thickness contains crystal water uniformly at the inner wall of quartz crucible of solar energy silicon single crystal production usefulness, and hydrated barta coating and carbon dioxide in air reaction can generate barium carbonate.When this coating quartz crucible is heated on single crystal growing furnace, barium carbonate will be decomposed to form barium oxide, and barium oxide can form silicon acid barium (BaSiO with the quartz crucible reaction again 3).Because the existence of silicon acid barium, make to form the fine and close small cristobalite crystallization of one deck on the quartz crucible wall that this small cristobalite crystallization is difficult to be infiltrated by solution and peel off, and is dissolved by solution even peel off also very fast meeting.
Beneficial effect; The utility model can prolong the work-ing life of quartz crucible significantly, can effectively improve long brilliant yield rate.One deck cristobalite crystallization that forms on inner wall of quartz crucible in addition can increase the intensity of quartz crucible, reduces the phenomenon of hot mastication.
Description of drawings
Accompanying drawing is the utility model structural representation.
Embodiment
The utility model is described in further detail below in conjunction with embodiment:
As shown in drawings: a kind of solar energy silicon single crystal production coating quartz crucible, comprise quartz crucible crucible body 1, the inwall of described quartz crucible crucible body 1 is provided with one deck barium carbonate coating 2.

Claims (1)

1. a solar energy silicon single crystal production coating quartz crucible comprises quartz crucible crucible body (1), it is characterized in that: the inwall of described quartz crucible crucible body (1) is provided with one deck barium carbonate coating (2).
CN2010201385992U 2010-03-23 2010-03-23 Coating quartz crucible for producing solar silicon single-crystal Expired - Fee Related CN201634794U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201385992U CN201634794U (en) 2010-03-23 2010-03-23 Coating quartz crucible for producing solar silicon single-crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201385992U CN201634794U (en) 2010-03-23 2010-03-23 Coating quartz crucible for producing solar silicon single-crystal

Publications (1)

Publication Number Publication Date
CN201634794U true CN201634794U (en) 2010-11-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010201385992U Expired - Fee Related CN201634794U (en) 2010-03-23 2010-03-23 Coating quartz crucible for producing solar silicon single-crystal

Country Status (1)

Country Link
CN (1) CN201634794U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103154330A (en) * 2011-05-25 2013-06-12 圣戈班研发(上海)有限公司 Silica crucible and method for fabricating the same
CN108531980A (en) * 2018-05-29 2018-09-14 宁夏富乐德石英材料有限公司 Improved quartz crucible and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103154330A (en) * 2011-05-25 2013-06-12 圣戈班研发(上海)有限公司 Silica crucible and method for fabricating the same
CN108531980A (en) * 2018-05-29 2018-09-14 宁夏富乐德石英材料有限公司 Improved quartz crucible and preparation method thereof

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: JIANGSU HUAER OPTO-ELECTRONIC MATERIAL CO., LTD.

Free format text: FORMER NAME: YANGZHOU HUAER POTHOELECTRIC CO., LTD.

CP03 Change of name, title or address

Address after: 225600 No. 7 Changjiang Road, Gaoyou Economic Development Zone, Jiangsu, China

Patentee after: Jiangsu Huaer Photoelectric Material Co., Ltd.

Address before: 225600, Jiangsu City, Gaoyou Province town industrial concentrated area Yangzhou wall optoelectronics materials Co., Ltd.

Patentee before: Yangzhou Huaer Photoelectron Material Co., Ltd.

C56 Change in the name or address of the patentee

Owner name: JIANGSU HUAER QUARTZ MATERIAL CO., LTD.

Free format text: FORMER NAME: JIANGSU HUAER OPTO-ELECTRONIC MATERIAL CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: 225600 No. 7 Changjiang Road, Gaoyou Economic Development Zone, Jiangsu, China

Patentee after: JIANGSU HUAER QUARTZ MATERIALS CO., LTD.

Address before: 225600 No. 7 Changjiang Road, Gaoyou Economic Development Zone, Jiangsu, China

Patentee before: Jiangsu Huaer Photoelectric Material Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101117

Termination date: 20160323