CN108531980A - Improved quartz crucible and preparation method thereof - Google Patents
Improved quartz crucible and preparation method thereof Download PDFInfo
- Publication number
- CN108531980A CN108531980A CN201810526785.4A CN201810526785A CN108531980A CN 108531980 A CN108531980 A CN 108531980A CN 201810526785 A CN201810526785 A CN 201810526785A CN 108531980 A CN108531980 A CN 108531980A
- Authority
- CN
- China
- Prior art keywords
- crucible
- silica
- silica crucible
- quartz crucible
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5024—Silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
A kind of improved quartz crucible and preparation method thereof,Belong to monocrystalline silicon manufacturing equipment technical field,The present invention can increase the porosity that silica crucible is contacted with graphite crucible by increasing the roughness of quartz crucible outer surface,When silica crucible high temperature and graphite crucible react and generate gas,Gas can be exported by the hole between silica crucible and graphite crucible,To avoid silica crucible from deforming,In addition,Barium hydroxide solution is sprayed on quartz crucible inner surface,Barium carbonate is generated to react by the carbon dioxide in barium hydroxide and air,It is reacted again by barium carbonate and silica crucible and generates barium silicate,Barium silicate induces quartz crucible inner surface to generate one layer of fine and close crystal cristobalite layer again,Since crystal cristobalite is without softening point and intensity height,Improve the intensity of inner wall of quartz crucible,To prevent silica crucible to deform.This method can effectively reduce silica crucible and deform at high temperature, be conveniently operated simultaneously.
Description
Technical field
The invention belongs to monocrystalline silicon manufacturing equipment technical fields, and in particular to a kind of improved quartz crucible and its making side
Method.
Background technology
The method for being used for growing silicon single crystal as one, usually using the drawing with Czochralski methods (CZ methods) for representative
Stretch method.Device as used herein usually has the silica crucible for keeping raw material silicon melt, and wherein the crucible is by graphite crucible
It surrounds, the interior shape of the graphite crucible, which is used to support the silica crucible and realizes, to be evenly heated, and heater for heating
It is arranged outside it.The shape of silica crucible and graphite crucible usually all includes the side wall of approximate cylindrical shape and appropriate ground diameter
To the bottom of beveling.
In CZ methods, the silicon raw material being located in silica crucible is heated and is melted.It is first since the fusing point of silicon is about 1420 DEG C
It must first be heated to reach fusing point.In the case, it is necessary to improve the temperature of the heater to about 1700 DEG C.Due to this
Heating process, graphite crucible and silica crucible are heated to the fusing point or higher of silicon.Start when quartz is more than about 1200 DEG C
Softening and deformation, and due to the loading of the molten silicon in silica crucible, silica crucible is almost entirely close with graphite crucible
Contact, the graphite crucible support the outside of silica crucible.
As shown in following equation, the problem known to one of CZ methods is, under the fusion temperature of silicon, in silica crucible
Outer surface is reacted with graphite crucible inner surface, generates SiC solids and CO gases, specific reaction equation are：SiO2+3C==SiC+
2CO, the coefficient of thermal expansion of the SiC of generation and the coefficient of thermal expansion of graphite crucible are significantly different, therefore, in the cold of graphite crucible
But in/warming cycle, SiC becomes the reason of rupture etc., therefore limits its service life in safety etc..This
Outside, thus generated CO gases apply pressure to silica crucible, lead to its deformation.
The currently used method for reducing silica crucible deformation is silica crucible to be fabricated to double-layer structure and in graphite earthenware
Shaping device is set on the outside of crucible, plays the role of fixation to graphite crucible and silica crucible and lifts, to reduce the deformation of silica crucible.
But complex procedures, prevent silica crucible deformation effect poor.
Invention content
In view of this, it is necessary to provide a kind of improved quartz crucibles that can effectively reduce silica crucible high temperature deformation.
It is necessary to provide a kind of production methods of improved quartz crucible simultaneously.
A kind of improved quartz crucible, the outer surface roughness of silica crucible are 200um~2000um, and table in silica crucible
Face is coated with crystal cristobalite coating.
A kind of production method of improved quartz crucible, includes the following steps：
Increase the roughness of quartz crucible outer surface：The stone sand that granularity is 0.1mm~2mm is selected to carry out quartz crucible outer surface
Blasting treatment makes the outer surface roughness of silica crucible reach 200um~2000um；
Quartz crucible inner surface spraying coating：Barium hydroxide solution is sprayed to quartz crucible inner surface.
Silica crucible inner coating is reinforced：Inner surface is injected with barium hydroxide solution silica crucible be warming up to 800 DEG C ~
1200 DEG C, the silica that inner coating induces silica crucible internal layer is changed into crystal cristobalite, obtains improved quartz crucible.
Preferably, the stone sand is made of the pomegranate sand particle of different-grain diameter, is specifically 10%~30% by mass component
The pomegranate sand particle that the grain size that pomegranate sand particle of the grain size less than 0.5mm, mass component are 50%~75% is 0.5mm~1.2mm
The pomegranate sand particle composition that the grain size for being 10%~35% with mass component is 1.2mm~2mm, blasting pressure are 0.4~0.6Mpa,
Speed of the silica crucible on rotating platform is 20Hz, and blast time is 60 seconds~300 seconds.
The present invention uses above-mentioned technical proposal, advantage to be：The present invention is thick by increasing quartz crucible outer surface
Rugosity process and quartz crucible inner surface setting coating procedure deform at high temperature to reduce silica crucible, pass through increase
The roughness of quartz crucible outer surface can increase the porosity that silica crucible is contacted with graphite crucible, silica crucible high temperature with
Graphite crucible react generate gas when, gas can export by the hole between silica crucible and graphite crucible, thus
Avoid silica crucible from deforming, in addition, spray barium hydroxide solution on quartz crucible inner surface, with by barium hydroxide with
Carbon dioxide in air, which reacts, generates barium carbonate, then is reacted by barium carbonate and silica crucible and generate barium silicate,
Barium silicate induces quartz crucible inner surface to generate one layer of fine and close crystal cristobalite layer again, due to crystal cristobalite without softening point and
Intensity is high, the intensity of inner wall of quartz crucible is improved, to prevent silica crucible to deform.
This method can effectively reduce silica crucible and deform at high temperature, be conveniently operated simultaneously.
Specific implementation mode
An embodiment of the present invention provides a kind of improved quartz crucibles that can effectively reduce silica crucible high temperature deformation.
It is necessary to provide a kind of production methods of improved quartz crucible simultaneously.
A kind of improved quartz crucible, the outer surface roughness of silica crucible are 200um~2000um, and table in silica crucible
Face is coated with crystal cristobalite coating.
A kind of production method of improved quartz crucible, includes the following steps：
Increase quartz crucible outer surface roughness：It is that the stone sand of 0.1mm~2mm sprays quartz crucible outer surface to select granularity
Sand processing, stone sand are made of the pomegranate sand particle of different-grain diameter, and the grain size for being specifically 10%~30% by mass component is less than 0.5mm
Pomegranate sand particle, mass component be 50%~75% grain size be 0.5mm~1.2mm pomegranate sand particle and mass component be
The pomegranate sand particle that 10%~35% grain size is 1.2mm~2mm forms, and blasting pressure is 0.4~0.6Mpa, and silica crucible is revolving
It is 20Hz to turn the speed on platform, and blast time is 60 seconds~300 seconds, and the outer surface roughness of silica crucible is made to reach
200um~2000um；By increasing the roughness of quartz crucible outer surface, when can improve silica crucible and graphite crucible and contacting
Porosity reduce the deformation of silica crucible to be easy to the gas discharge that silica crucible and graphite crucible pyroreaction generate；
Quartz crucible inner surface spraying coating：Silica crucible of the outer surface through blasting treatment is placed in service sink first and uses hydrogen
Fluoric acid is cleaned, and the volumetric concentration of hydrofluoric acid is 15% ~ 20%, by pickling to remove the metal impurities in silica crucible, warp
Silica crucible after pickling, which is put into deionized water, to be cleaned, and acid remaining on silica crucible is washed, then by stone
English crucible is put be dried to quartz crucible surface no moisture into infrared drying instrument until；Using infrared-ray oven to silica crucible
It is dried, silica crucible can be reduced and adhere to new impurity because contacting instrument.
Barium hydroxide solution is prepared, barium hydroxide octahydrate solid powder is weighed, barium hydroxide octahydrate solid powder
Purity is analysis pure 95%~99%, is dissolved in the deionized water that temperature is 20 DEG C~60 DEG C, and it is 0.2mol/ to form molar concentration
The barium hydroxide solution of L~2mol/L；
Barium hydroxide solution is sprayed to quartz crucible inner surface, silica crucible is positioned in high-temperature baking stove and is heated, quartz is made
Crucible surface temperature reaches 150 DEG C~600 DEG C, and the above-mentioned barium hydroxide solution prepared is adhered to quartz by spray gun ejection
The inner surface of crucible, the carbon dioxide after barium hydroxide solution is injected on quartz crucible inner surface and in air occur rapidly anti-
Barium carbonate should be generated and be attached to quartz crucible inner surface, specific reaction equation is：Ba(OH)2+CO2=BaCO3+H2O, control injection
Barium hydroxide solution concentration, concentration range is that the barium carbonate coating concentration formed in quartz crucible inner surface is made to be 60ug/
cm2~300ug/cm2；The silica crucible for having sprayed barium hydroxide is positioned over the high-temperature baking stove that temperature is 100 DEG C~600 DEG C
Middle heating 2~10 minutes, then takes out silica crucible and is cooled down under field conditions (factors), obtained internally coated silica crucible；
If barium carbonate concentration is too low, the cristobalite compacted zone formed under high temperature is excessively thin, for silica crucible intensity enhancing without too your writing
With if barium carbonate excessive concentration, the cristobalite compacted zone formed under high temperature is blocked up, is easy to peel off from crucible base, causes to draw
Crystalline substance terminates；
Silica crucible inner coating is reinforced：When will there is internally coated silica crucible to be warming up to 800 DEG C ~ 1200 DEG C, table in silica crucible
The barium carbonate coating of face adherency reacts at high temperature with silica generates barium silicate, and specific reaction equation is：BaCO3+SiO2
=BaSiO3+CO2, barium silicate induces the unformed silica of silica crucible internal layer and is changed into crystal cristobalite, obtain high-strength again
Silica crucible is spent, crystal cristobalite improves the intensity of inner wall of quartz crucible, to prevent quartzy earthenware without softening point and intensity height
Crucible deforms.
Embodiment 1：
A kind of production method of improved quartz crucible, includes the following steps：
（1）24 inches of silica crucible is positioned on sand-blasting machine rotating platform, it is the stone of 0.1mm~2mm to select size specification
Pomegranate sand is made of following different-grain diameter particle by weight percentage：Grain size is less than the 30% of 0.5mm, grain size 0.5mm~1.2mm
50%, grain size be more than 1.2mm 20%, carry out outer surface blasting treatment, 0.4~0.6Mpa of blasting pressure, workpiece rotational frequency
For 20Hz, blast time is 60 seconds, and quartz crucible outer surface roughness measurement reaches 200um~600um after spraying.
（2）It will be positioned in the acid tank containing hydrofluoric acid and carried out at pickling after the silica crucible of sandblasting is cleaned with pure water
The volumetric concentration of reason, hydrofluoric acid is 15%, and pickling time is 20 minutes, and the metal ion on silica crucible is removed, shadow is avoided
The quality for ringing monocrystalline silicon crystal pulling, the crucible after pickling carry out deionized water cleaning, and scavenging period is 3 minutes, and the residual acid in surface is complete
Portion cleans up.
（3）Silica crucible after cleaning carries out infrared drying 3 hours in headroom room；
（4）The barium hydroxide octahydrate solid powder for weighing 0.2mol, is dissolved in 30 DEG C of deionized water 1L, and formation mole is dense
Degree is the barium hydroxide solution of 0.2mol/L.
（5）Silica crucible is positioned in the high-temperature baking stove that temperature is 400 DEG C, heats 8 minutes, make quartz crucible surface
Temperature reaches 150 DEG C.
（6）Silica crucible is positioned on rotating platform, step is weighed（4）The barium hydroxide solution 75g of preparation passes through spray
Rifle, which sprays to occur to chemically react with Carbon Dioxide in Air, to be formed barium carbonate and is uniformly attached to quartz crucible inner surface, and quartz is made
A concentration of 116ug/cm of inner surface of crucible barium carbonate2。
（7）The silica crucible for having sprayed barium hydroxide solution is positioned in the high-temperature baking stove that temperature is 200 DEG C and heats 5
After minute, natural cooling is taken out.
（8）There to be internally coated silica crucible to be warming up to 800 DEG C ~ 1200 DEG C, inner coating induces the two of silica crucible internal layer
Silica is changed into crystal cristobalite, obtains high intensity silica crucible.
Embodiment 2：
A method of silica crucible high temperature deformation is effectively reduced, is included the following steps：
（1）24 inches of silica crucible is positioned on sand-blasting machine rotating platform, it is the stone of 0.1mm~2mm to select size specification
Pomegranate sand is made of following different-grain diameter particle by weight percentage：Grain size is less than the 10% of 0.5mm, grain size 0.5mm~1.2mm
70%, grain size be more than 1.2mm 20%, carry out outer surface blasting treatment, 0.4~0.6Mpa of blasting pressure, workpiece rotational frequency
For 20Hz, blast time is 60 seconds, and quartz crucible outer surface roughness measurement reaches 800um~1200um after spraying.
（2）It will be positioned in the acid tank containing hydrofluoric acid and carried out at pickling after the silica crucible of sandblasting is cleaned with pure water
The volumetric concentration of reason, hydrofluoric acid is 20%, and pickling time is 40 minutes, and the metal ion on silica crucible is removed, shadow is avoided
The quality for ringing monocrystalline silicon crystal pulling, the crucible after pickling carry out deionized water cleaning, and scavenging period is 3 minutes, and the residual acid in surface is complete
Portion cleans up.
（3）Silica crucible after cleaning carries out infrared drying 3 hours in headroom room；
（4）The barium hydroxide octahydrate solid powder for weighing 2mol, is dissolved in 20 DEG C of deionized water 1L, forms molar concentration
For the barium hydroxide solution of 2mol/L.
（5）Silica crucible is positioned in the high-temperature baking stove that temperature is 400 DEG C, heats 8 minutes, make quartz crucible surface
Temperature reaches 600 DEG C.
（6）Silica crucible is positioned on rotating platform, step is weighed（4）The barium hydroxide solution 94g of preparation passes through spray
Rifle, which sprays to occur to chemically react with Carbon Dioxide in Air, to be formed barium carbonate and is uniformly attached to quartz crucible inner surface, and quartz is made
A concentration of 195ug/cm of inner surface of crucible barium carbonate2。
（7）The silica crucible for having sprayed barium hydroxide solution is positioned in the high-temperature baking stove that temperature is 200 DEG C and heats 5
After minute, natural cooling is taken out.
（8）There to be internally coated silica crucible to be warming up to 800 DEG C ~ 1200 DEG C, inner coating induces the two of silica crucible internal layer
Silica is changed into crystal cristobalite, obtains high intensity silica crucible.
Embodiment 3：
A method of silica crucible high temperature deformation is effectively reduced, is included the following steps：
（1）24 inches of silica crucible is positioned on sand-blasting machine rotating platform, it is the stone of 0.1mm~2mm to select size specification
Pomegranate sand is made of following different-grain diameter particle by weight percentage：Grain size is less than the 10% of 0.5mm, grain size 0.5mm~1.2mm
68%, grain size be more than 1.2mm 22%, carry out outer surface blasting treatment, 0.4~0.6Mpa of blasting pressure, workpiece rotational frequency
For 20Hz, blast time is 60 seconds, and quartz crucible outer surface roughness measurement reaches 1200um~2000um after spraying.
（2）It will be positioned in the acid tank containing hydrofluoric acid and carried out at pickling after the silica crucible of sandblasting is cleaned with pure water
The volumetric concentration of reason, hydrofluoric acid is 18%, and pickling time is 20 minutes, and the metal ion on silica crucible is removed, shadow is avoided
The quality for ringing monocrystalline silicon crystal pulling, the crucible after pickling carry out deionized water cleaning, and scavenging period is 3 minutes, and the residual acid in surface is complete
Portion cleans up.
（3）Silica crucible after cleaning carries out infrared drying 3 hours in headroom room；
（4）The barium hydroxide octahydrate solid powder for weighing 1.85mol, is dissolved in 60 DEG C of deionized water 1L, formation mole
The barium hydroxide solution of a concentration of 1.85mol/L.
（5）Silica crucible is positioned in the high-temperature baking stove that temperature is 400 DEG C, heats 8 minutes, make quartz crucible surface
Temperature reaches 600 DEG C.
（6）Silica crucible is positioned on rotating platform, step is weighed（4）The barium hydroxide solution 95g of preparation passes through spray
Rifle, which sprays to occur to chemically react with Carbon Dioxide in Air, to be formed barium carbonate and is uniformly attached to quartz crucible inner surface, and quartz is made
A concentration of 255ug/cm of inner surface of crucible barium carbonate2。
（7）The silica crucible for having sprayed barium hydroxide solution is positioned in the high-temperature baking stove that temperature is 200 DEG C and heats 5
After minute, natural cooling is taken out.
（8）There to be internally coated silica crucible to be warming up to 800 DEG C ~ 1200 DEG C, inner coating induces the two of silica crucible internal layer
Silica is changed into crystal cristobalite, obtains high intensity silica crucible.
Test result
The silica crucible of specific preparation example 1,2,3 is carried out with common silica crucible with condition crystal pulling, and silica crucible charge is all
140kg, compares the probability that silica crucible deforms at about 12 hours material time after crystal pulling, data are as follows：
| Crucible type | Put into number | Become figurate number | Deformation rate % |
| Common silica crucible | 182 | 6 | 3.29 |
| 1 silica crucible of example | 150 | 1 | 0.6 |
| 2 silica crucible of example | 150 | 0 | 0 |
| 3 silica crucible of example | 148 | 0 | 0 |
In terms of upper table data, using the silica crucible of the present invention during drawn monocrystalline silicon, deformation probability substantially reduces or base
This does not deform, and greatly improves silica crucible quality.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, those skilled in the art can understand all or part of the processes for realizing the above embodiment, and is wanted according to right of the present invention
Equivalent variations made by asking, still belong to the scope covered by the invention.
Claims (4)
1. a kind of improved quartz crucible, it is characterised in that：The outer surface roughness of silica crucible is 200um~2000um, and stone
English inner surface of crucible is coated with crystal cristobalite coating.
2. a kind of production method of improved quartz crucible, which is characterized in that include the following steps：
Increase the roughness of quartz crucible outer surface：The stone sand that granularity is 0.1mm~2mm is selected to carry out quartz crucible outer surface
Blasting treatment makes the outer surface roughness of silica crucible reach 200um~2000um；
Quartz crucible inner surface spraying coating：Barium hydroxide solution is sprayed to quartz crucible inner surface.
Silica crucible inner coating is reinforced：The silica crucible that inner surface is injected with to barium hydroxide solution is warming up to 800 DEG C ~ 1200
DEG C, the silica that inner coating induces silica crucible internal layer is changed into crystal cristobalite, obtains improved quartz crucible.
3. the production method of improved quartz crucible as claimed in claim 2, it is characterised in that：The stone sand is by different-grain diameter
Pomegranate sand particle forms, and pomegranate sand particle of the grain size for being specifically 10%~30% by mass component less than 0.5mm, mass component are
The grain size that the pomegranate sand particle and mass component that 50%~75% grain size is 0.5mm~1.2mm are 10%~35% be 1.2mm~
The pomegranate sand particle of 2mm forms, and blasting pressure is 0.4~0.6Mpa, and speed of the silica crucible on rotating platform is
20Hz, blast time are 60 seconds~300 seconds.
4. the production method of improved quartz crucible as claimed in claim 2, it is characterised in that：The quartz crucible inner surface spray
Penetrating coating step is specially：Silica crucible is positioned in high-temperature baking stove and is heated, quartz crucible surface temperature is made to reach 150 DEG C
~600 DEG C, the barium hydroxide solution for being then 0.2%~2% to quartz crucible inner surface injection barium ions molar concentration will spray
The silica crucible of complete barium hydroxide is positioned in high-temperature baking stove and heats, and has obtained internally coated silica crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810526785.4A CN108531980B (en) | 2018-05-29 | 2018-05-29 | Improved quartz crucible and method for making same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810526785.4A CN108531980B (en) | 2018-05-29 | 2018-05-29 | Improved quartz crucible and method for making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108531980A true CN108531980A (en) | 2018-09-14 |
| CN108531980B CN108531980B (en) | 2020-12-11 |
Family
ID=63473179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810526785.4A Active CN108531980B (en) | 2018-05-29 | 2018-05-29 | Improved quartz crucible and method for making same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108531980B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1498196A (en) * | 2001-03-23 | 2004-05-19 | �����ɷ� | Quartz glass component and method for production thereof |
| CN101356130A (en) * | 2005-10-19 | 2009-01-28 | 莫门蒂夫性能材料股份有限公司 | Quartz glass crucible and method for treating surface of quartz glass crucible |
| TW200922889A (en) * | 2007-09-28 | 2009-06-01 | Japan Super Quartz Corp | Quarts glass crucible for pulling up silicon single crystals and manufacturing method of the crucible |
| CN101696499A (en) * | 2009-09-30 | 2010-04-21 | 常州天合光能有限公司 | Treatment method for crucible for casting ingots |
| CN201506711U (en) * | 2009-09-30 | 2010-06-16 | 常州天合光能有限公司 | Crucible for casting ingot |
| CN201634794U (en) * | 2010-03-23 | 2010-11-17 | 扬州华尔光电子材料有限公司 | Coating quartz crucible for producing solar silicon single-crystal |
| CN102260902A (en) * | 2011-07-15 | 2011-11-30 | 江苏晶鼎电子材料有限公司 | Method for preparing quartz crucible coating |
-
2018
- 2018-05-29 CN CN201810526785.4A patent/CN108531980B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1498196A (en) * | 2001-03-23 | 2004-05-19 | �����ɷ� | Quartz glass component and method for production thereof |
| CN101356130A (en) * | 2005-10-19 | 2009-01-28 | 莫门蒂夫性能材料股份有限公司 | Quartz glass crucible and method for treating surface of quartz glass crucible |
| TW200922889A (en) * | 2007-09-28 | 2009-06-01 | Japan Super Quartz Corp | Quarts glass crucible for pulling up silicon single crystals and manufacturing method of the crucible |
| CN101696499A (en) * | 2009-09-30 | 2010-04-21 | 常州天合光能有限公司 | Treatment method for crucible for casting ingots |
| CN201506711U (en) * | 2009-09-30 | 2010-06-16 | 常州天合光能有限公司 | Crucible for casting ingot |
| CN201634794U (en) * | 2010-03-23 | 2010-11-17 | 扬州华尔光电子材料有限公司 | Coating quartz crucible for producing solar silicon single-crystal |
| CN102260902A (en) * | 2011-07-15 | 2011-11-30 | 江苏晶鼎电子材料有限公司 | Method for preparing quartz crucible coating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108531980B (en) | 2020-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7955511B2 (en) | Silica glass crucible | |
| EP1985593B1 (en) | Reinforced silica glass crucible | |
| EP2202335B1 (en) | Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible | |
| JP2008510676A (en) | Quartz glass covering member and method for manufacturing said member | |
| JP2003166059A (en) | Film-forming apparatus and film-forming method | |
| WO1996021617A1 (en) | Silica gel, synthetic quartz glass powder, quartz glass molding, and processes for producing these | |
| CN108531980A (en) | Improved quartz crucible and preparation method thereof | |
| CN100415945C (en) | Method of improving life of straight pulling silicon single crystal furnace thermal field component and single crystal furnace | |
| CN211079401U (en) | Local coating quartz crucible | |
| CN110670121B (en) | Locally coated quartz crucible and manufacturing method thereof | |
| JP2001163629A (en) | Thermal insulator for semiconductor, processing furnace and producing method thereof | |
| EP2460778A2 (en) | Method of manufacturing vitreous silica crucible | |
| CN211367805U (en) | Quartz crucible | |
| CN101696499A (en) | Treatment method for crucible for casting ingots | |
| JP2012211082A (en) | Silica vessel | |
| CN110541193A (en) | Quartz crucible and preparation method thereof | |
| TWI808756B (en) | Quartz glass crucible, manufacturing method thereof, and silicon single crystal manufacturing method | |
| RU2286407C1 (en) | Method of preparing crucible for growing of monocrystalline silicon ingot | |
| WO2011156976A1 (en) | Method for polycrystalline silicon ingot casting | |
| CN107267734A (en) | Gear chamber annealing process | |
| JP2006347792A5 (en) | ||
| JPH1112091A (en) | Production of spherical single crystal silicon | |
| KR20170014115A (en) | Fabrication method of Zirconia(ZrO2) coated quartz crucible in situ fusion process | |
| RU2355833C1 (en) | Method for preparation of quartz crucibles for growth of silicon single crystals | |
| JPS6283325A (en) | Production of quartz glass having high purity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 750021 No.23 Guangming West Road, Xixia District, Yinchuan City, Ningxia Hui Autonomous Region Patentee after: Ningxia dunyuan poly core semiconductor technology Co.,Ltd. Address before: 750021 No.23 Guangming West Road, Xixia District, Yinchuan City, Ningxia Hui Autonomous Region Patentee before: FERROTEC (NINGXIA) ADVANCED QUARTZ MATERIAL Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |