CN201616452U - High-power LED packaging shell - Google Patents
High-power LED packaging shell Download PDFInfo
- Publication number
- CN201616452U CN201616452U CN2010201268560U CN201020126856U CN201616452U CN 201616452 U CN201616452 U CN 201616452U CN 2010201268560 U CN2010201268560 U CN 2010201268560U CN 201020126856 U CN201020126856 U CN 201020126856U CN 201616452 U CN201616452 U CN 201616452U
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- ceramic substrate
- power led
- pad
- cavity
- shell
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Abstract
The utility model discloses a high-power LED packaging shell, comprising a ceramic substrate. The ceramic substrate is internally distributed with a metalized circuit which is communicated with an electrode of the upper surface of the ceramic substrate; the ceramic substrate is sheet-shaped, and the upper surface thereof is provided with a cavity; the cavity is internally provided with a welding pad; a hole penetrating through the ceramic substrate is arranged below the welding pad and is filled with metal; and the main ingredient of the metal is tungsten. The high-power LED packaging shell adopts a radiating channel with stronger heat conducting performance, not only overcomes the defect of the poorer radiating effect of the high-power LED in the prior art, prolongs the service life of an LED chip, but also realizes integration of the high-power LED chip in one LED shell, thus being beneficial to miniaturization of devices.
Description
Technical field
The utility model relates to a kind of LED encapsulating structure, especially a kind of package casing of high-power LED chip.
Background technology
(Light Emitting Diode is LED) because advantages such as the life-span is long, light efficiency is high, radiationless, shock resistance and low effect are considered to top quality light source of 21 century to light-emitting diode.But have influence on the heat dissipation design that major reason is its heat dissipation problem, particularly encapsulating structure that great power LED is used at present.
The high power led housing kind of conventional package structure mainly contains: the copper base or the aluminium base shell that 1) contain printed circuit; 2) be furnished with the metallization circuit the ceramic substrate shell.
For the shell of copper base or aluminium base, realize that at copper or the surperficial insulating barrier that needs printing to contain organic material of aluminium circuit connects, and has influenced its heat-sinking capability; And the thermal expansion coefficient difference of the thermal coefficient of expansion of copper or aluminium and silicon semiconductor chip is bigger, and when variations in temperature was big, the stress that produces between chip and shell can influence the life-span of chip; In addition, when printed circuit is worked under hot environment, the easy deterioration of material property, reliability is relatively poor; And single shell circuit is individual layer wiring, so can only realize simple circuit connecting relation.
For ceramic package, can be in ceramic substrate multilayer wiring, realize that complicated circuit connects, and the reliability height of ceramic package, but because the heat-sinking capability of pottery itself is limited, so can only make the small-power shell.
Because above-mentioned two class shell thermal diffusivities are relatively poor, be applicable to the low-power LED encapsulation, when requiring great power LED, adopt mostly and will be installed on the pcb board that contains printed circuit after a plurality of shell encapsulation.This complex process, structure precision is low, and encapsulation volume is big, is unfavorable for the miniaturization of devices development, and the difficult diffusion of a large amount of heats of a plurality of LED generation, has seriously shortened the useful life of LED.
The utility model content
The technical problems to be solved in the utility model is to overcome the existing relatively poor shortcoming of high-power LED encapsulation shell thermal diffusivity, adopt the stronger thermal dissipating path of heat conductivility, a kind of good heat dissipation effect, simple in structure, the high-power LED encapsulation shell that is beneficial to device miniaturization are provided.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: adopt ceramic substrate, be furnished with the metallization circuit in the above-mentioned ceramic substrate, the metallization circuit is communicated with the electrode of ceramic substrate upper surface, and crucial improvement is, described ceramic substrate in the form of sheets, upper surface is established a cavity, establishes pad in the cavity, and pad is divided into the hole that connects ceramic substrate, fill metal in the above-mentioned hole, the main component of described metal is a tungsten.
Further improve and be:
Described ceramic substrate lower surface metallizes, and forms metal layer.
Described pad is provided with two at least, series, parallel or mixing connection mutually between the pad.
In the such scheme, the upper surface of ceramic substrate is provided with cavity, for led chip provides mechanical support; Led chip is installed on the pad in the cavity, and a large amount of heat of its generation can pass through the metal in pad, the hole and the metal layer derivation of ceramic substrate lower surface; The signal of telecommunication is by metallization circuit, the electrode input of ceramic base plate surface, the output of ceramic substrate inside.The thermal conduction portions and the current-carrying part that are high power led housing of the present utility model are separate.
Adopt technique scheme, fill metal, formed a thermal dissipating path that heat conductivility is good by being provided with in the hole that connects ceramic substrate, the hole, and the metal layer quick heat radiating by the ceramic substrate lower surface; And the metal main component of filling in the above-mentioned hole is tungsten, and the thermal coefficient of expansion of tungsten and the thermal coefficient of expansion of silicon semiconductor chip are approaching, reduced the stress that produces between led chip and the LED shell, the life-span of having improved led chip; Adopt structure of the present utility model, a large amount of heats that LED is produced spread rapidly, therefore realized in the integrated single shell of high-power LED chip, not only mounting process simple, improved efficient, and encapsulation back volume is little, is beneficial to miniaturization of devices; Ceramic substrate forms through 1000 ℃ high temperature sintering, and material property is stable, under the operational environment below 200 °, is difficult for deterioration, has improved the useful life of package casing.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Fig. 1 is that master of the present utility model looks schematic diagram;
Fig. 2 be among Fig. 1 A-A to cutaway view Amplified image;
Wherein, 1, ceramic substrate, 2, electrode, 3, pad, 4, metal layer, 5, the hole, 6, cavity.
Embodiment
Referring to Fig. 1 and Fig. 2 as can be seen, the utility model comprises ceramic substrate 1, be furnished with the metallization circuit in the ceramic substrate, the metallization circuit be communicated with the electrode 2 of ceramic substrate upper surface, described ceramic substrate in the form of sheets, upper surface is established a cavity 6, establish pad 3 in the cavity, pad 3 is divided into the hole 5 that connects ceramic substrate, fills metal in the above-mentioned hole 5, and the main component of described metal is a tungsten.6 pairs of built-in led chips of cavity play mechanical support and thermolysis; In hole 5, fill tungsten and not only provide loading end for led chip, good heat passage also is provided, be beneficial to the diffusion of heat, and the thermal coefficient of expansion of the thermal coefficient of expansion of tungsten and silicon semiconductor chip is approaching, the stress that produces between led chip and the LED shell, the life-span of having improved led chip have been reduced.
Described metal also comprises one or several in aluminium oxide, molybdenum, the manganese.
Further improvement of these options:
For quick heat radiating, metallize at the lower surface of described ceramic substrate 1, form metal layer 4.The main component tungsten of metal layer 4 also comprises in aluminium oxide, molybdenum, the manganese one or several.
Described pad can be set to one, can also be set to two, three or a plurality of, series, parallel or mixing connection mutually between the pad.By interconnective pad, realize that a plurality of led chips are integrated in the LED shell, complied with miniaturization of devices, high-power integrated development trend.
Described metallization circuit can be set to one deck, perhaps be provided with at least two-layer, thereby realize the connection request of complicated circuit.
To sum up, heat conduction of the present utility model, conductive path are separate.During work, electric current is by the metallization circuit of ceramic substrate 1 inside and electrode 2 inputs, the output on ceramic substrate 1 surface; The heat that LED produces is filled the hole 5 of tungsten and the large-area metal layer rapid diffusion of ceramic substrate lower surface 3 times by pad 3, pad.Adopt this novel, not only overcome the relatively poor shortcoming of great power LED cooling effect in the prior art, improved the useful life of led chip, and realized that high-power LED chip is integrated in the LED shell, is beneficial to miniaturization of devices.
Claims (5)
1. high-power LED encapsulation shell, comprise ceramic substrate, be furnished with the metallization circuit in the ceramic substrate, the metallization circuit be communicated with the electrode of ceramic substrate upper surface, it is characterized in that: described ceramic substrate in the form of sheets, upper surface is established a cavity, establish pad in the cavity, pad is divided into the hole that connects ceramic substrate, fills metal in the above-mentioned hole, and the main component of described metal is a tungsten.
2. high-power LED encapsulation shell according to claim 1 is characterized in that described metal also comprises one or several in aluminium oxide, molybdenum, the manganese.
3. high-power LED encapsulation shell according to claim 1 is characterized in that described ceramic substrate lower surface metallizes, and forms metal layer.
4. high-power LED encapsulation shell according to claim 3, the main component that it is characterized in that described metal layer is a tungsten, also comprises in aluminium oxide, molybdenum, the manganese one or several.
5. high-power LED encapsulation shell according to claim 1 is characterized in that described pad is provided with two at least, series, parallel or mixing connection mutually between the pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201268560U CN201616452U (en) | 2010-03-05 | 2010-03-05 | High-power LED packaging shell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201268560U CN201616452U (en) | 2010-03-05 | 2010-03-05 | High-power LED packaging shell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201616452U true CN201616452U (en) | 2010-10-27 |
Family
ID=43002816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201268560U Expired - Lifetime CN201616452U (en) | 2010-03-05 | 2010-03-05 | High-power LED packaging shell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201616452U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615773A (en) * | 2018-05-17 | 2018-10-02 | 北京航天时代光电科技有限公司 | One kind being used for surface-pasted photodetector encapsulating shell |
-
2010
- 2010-03-05 CN CN2010201268560U patent/CN201616452U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615773A (en) * | 2018-05-17 | 2018-10-02 | 北京航天时代光电科技有限公司 | One kind being used for surface-pasted photodetector encapsulating shell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 050051 Hebei Shijiazhuang City Cooperative Road 113 179 Mailbox 41 sub-box Patentee after: Hebei Zhongchi Electronic Technology Co., Ltd. Address before: 050051 Hebei Shijiazhuang City Cooperative Road 113 179 Mailbox 41 sub-box Patentee before: HEBEI SINOPACK ELECTRONIC TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20101027 |
|
| CX01 | Expiry of patent term |