CN201527968U - Radiating enhanced integrated circuit packaging structure - Google Patents
Radiating enhanced integrated circuit packaging structure Download PDFInfo
- Publication number
- CN201527968U CN201527968U CN 200920199847 CN200920199847U CN201527968U CN 201527968 U CN201527968 U CN 201527968U CN 200920199847 CN200920199847 CN 200920199847 CN 200920199847 U CN200920199847 U CN 200920199847U CN 201527968 U CN201527968 U CN 201527968U
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- chip
- radiating
- support plate
- fin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a radiating enhanced integrated circuit packaging structure, belonging to the technical field of integrated circuit package. A chip is adhered onto a chip carrier via silver paste, and lead frame pins are connected with the chip via conducing wires. The radiating enhanced integrated circuit packaging structure is characterized in that a radiating plate is mounted under the chip carrier. The radiating plate is inlaid on the bottom of colloid of the integrated circuit, and the bottom surface of the radiating plate is exposed to the bottom of the colloid of the integrated circuit, thereby enhancing radiating property on the premise of not changing specification of the integrated circuit. The radiating enhanced integrated circuit packaging structure can provide large power dissipation.
Description
Technical field
The utility model relates to a kind of integrated circuit and strengthens heat-radiation type package structure, is applied in the high-power integrated circuit encapsulation technology.
Technical background
Along with the application of integrated circuit is extensive day by day, improving constantly of microelectronics Packaging (Packaging), high-power encapsulation technology, heat dispersion to integrated circuit package structure requires more and more higher, original conventional package structure as shown in Figure 1, comprise colloid 1 ', chip 2 ', connect lead 3 ', lead frame pin 4 ', chip slide glass 5 ', elargol 6 ' etc., the shortcoming of this encapsulating structure is, after integrated circuit signal power increased, its heat dispersion can't satisfy the power requirement that increases day by day.
The utility model content
The purpose of this utility model provides a kind of integrated circuit pad pasting cutting-up product dropping device that is used for.
The technical solution that the utility model is taked is: a kind of integrated circuit strengthens heat-radiation type package structure, chip is adhered on the chip support plate by elargol, the lead frame pin links to each other with chip by connecting lead, it is characterized in that: fin is installed under chip support plate.
The utility model further is provided with as follows:
Fin and chip support plate are spaced apart, not contact with chip support plate.
Fin is embedded in the bottom of integrated circuit colloid, and the bottom surface of fin exposes to integrated circuit colloid bottom, and another face is over against the chip slide glass but contact with it.
The utility model by chip support plate just below the increase heating panel, make integrated circuit under the prerequisite that overall dimension does not change, strengthened heat dissipation characteristics, used the integrated circuit of the integrated circuit enhancement mode encapsulating structure processing of this utility model, bigger power consumption can be provided.
Description of drawings
Fig. 1 is existing integrated circuit package structure schematic diagram;
Fig. 2 strengthens the heat-radiation type package structure schematic diagram for the utility model integrated circuit.
Description of reference numerals: 1, colloid; 2 chips; 3, connect lead; 4, lead frame pin; 5, chip slide glass; 6, elargol; 7, fin.
Embodiment
As shown in Figure 2, it is a kind of integrated circuit enhancing heat-radiation type package structure schematic diagram according to the utility model one preferred embodiment, in Fig. 2, chip 2 is adhered on the chip support plate 5 by elargol 6, lead frame pin 4 links to each other with chip 2 by connecting lead 3, chip support plate 5 has been formed lead frame with lead frame pin 4, fin 7 be installed on chip support plate 5 under, fin 7 is spaced apart with chip support plate 5, not contact with chip support plate 5, in the present embodiment, fin 7 is inlayed the bottom with integrated circuit colloid 1, the bottom surface of fin 7 exposes to integrated circuit colloid 1 bottom, and another face is contact with it over against chip slide glass 5 but, the fin 7 preferred copper alloy heatsinks that adopt.
The utility model by chip support plate 5 just below the increase heating panel 7, make integrated circuit under the prerequisite that overall dimension does not change, strengthened heat dissipation characteristics, used the integrated circuit of the integrated circuit enhancement mode encapsulating structure processing of this utility model, bigger power consumption can be provided.
Though the utility model discloses as above with a preferred embodiment; right its is not in order to restriction the utility model; any person of ordinary skill in the field; in the spirit and scope that do not break away from the utility model; but can do various changes and improvement, so the protection range of the utility model is as the criterion when looking the claim person of defining.
Claims (3)
1. an integrated circuit strengthens heat-radiation type package structure, and chip is adhered on the chip support plate by elargol, and the lead frame pin links to each other with chip by connecting lead, it is characterized in that: fin is installed under chip support plate.
2. a kind of integrated circuit according to claim 1 strengthens heat-radiation type package structure, and it is characterized in that: fin and chip support plate are spaced apart, not contact with chip support plate.
3. a kind of integrated circuit according to claim 2 strengthens heat-radiation type package structure, it is characterized in that: fin is embedded in the bottom of integrated circuit colloid, the bottom surface of fin exposes to integrated circuit colloid bottom, and another face is over against the chip slide glass but contact with it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200920199847 CN201527968U (en) | 2009-11-19 | 2009-11-19 | Radiating enhanced integrated circuit packaging structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200920199847 CN201527968U (en) | 2009-11-19 | 2009-11-19 | Radiating enhanced integrated circuit packaging structure |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201527968U true CN201527968U (en) | 2010-07-14 |
Family
ID=42519250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200920199847 Expired - Fee Related CN201527968U (en) | 2009-11-19 | 2009-11-19 | Radiating enhanced integrated circuit packaging structure |
Country Status (1)
Country | Link |
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CN (1) | CN201527968U (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105632947A (en) * | 2015-12-24 | 2016-06-01 | 合肥祖安投资合伙企业(有限合伙) | Semiconductor device packaging structure and manufacturing method thereof |
CN106920785A (en) * | 2017-03-29 | 2017-07-04 | 江苏长电科技股份有限公司 | A kind of manufacturing process of interior insulation encapsulating structure |
CN106935520A (en) * | 2017-03-29 | 2017-07-07 | 江苏长电科技股份有限公司 | A kind of interior insulation encapsulating structure and its manufacturing process |
CN109300865A (en) * | 2018-11-07 | 2019-02-01 | 华天科技(西安)有限公司 | A kind of encapsulating structure and manufacturing method of frame clsss product enhancing heat dissipation |
-
2009
- 2009-11-19 CN CN 200920199847 patent/CN201527968U/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105632947A (en) * | 2015-12-24 | 2016-06-01 | 合肥祖安投资合伙企业(有限合伙) | Semiconductor device packaging structure and manufacturing method thereof |
CN106920785A (en) * | 2017-03-29 | 2017-07-04 | 江苏长电科技股份有限公司 | A kind of manufacturing process of interior insulation encapsulating structure |
CN106935520A (en) * | 2017-03-29 | 2017-07-07 | 江苏长电科技股份有限公司 | A kind of interior insulation encapsulating structure and its manufacturing process |
CN109300865A (en) * | 2018-11-07 | 2019-02-01 | 华天科技(西安)有限公司 | A kind of encapsulating structure and manufacturing method of frame clsss product enhancing heat dissipation |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100714 Termination date: 20131119 |