CN201623066U - Packaging structure of printed circuit board with flip chip and radiating block connected with external radiating cap - Google Patents

Packaging structure of printed circuit board with flip chip and radiating block connected with external radiating cap Download PDF

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Publication number
CN201623066U
CN201623066U CN2010201187845U CN201020118784U CN201623066U CN 201623066 U CN201623066 U CN 201623066U CN 2010201187845 U CN2010201187845 U CN 2010201187845U CN 201020118784 U CN201020118784 U CN 201020118784U CN 201623066 U CN201623066 U CN 201623066U
Authority
CN
China
Prior art keywords
chip
radiating
circuit board
cap
printed circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010201187845U
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Chinese (zh)
Inventor
王新潮
梁志忠
刘志刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN2010201187845U priority Critical patent/CN201623066U/en
Application granted granted Critical
Publication of CN201623066U publication Critical patent/CN201623066U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to a packaging structure of a printed circuit board with a flip chip and a radiating block connected with an external radiating cap, which comprises a chip (3), a single or a plurality of printed circuit board(s) (9), a metal convex block (10) and a plastic sealing body (8). The packaging structure is characterized in that a radiating block (7) is arranged above the chip (3), a conductive or non-conductive heat-conducting bonding substance II (6) is embedded between the radiating block (7) and the chip (3), a radiating cap (11) is arranged above the radiating block (7), a conductive or non-conductive heat-conducting bonding substance III (13) is embedded between the radiating board (11) and the radiating block (7), and the radiating cap (11) is sleeved on the plastic sealing body (8). The utility model can enhance the radiating capability so that the heat of the chip can be rapidly transmitted out of the packaging body.

Description

The external radiating cap encapsulating structure of chip of printed circuit board flip heat dissipation block
(1) technical field
The utility model relates to the external radiating cap encapsulating structure of a kind of chip of printed circuit board flip heat dissipation block.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type (as shown in Figures 3 and 4)
Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and providing a kind of can provide the strong chip of printed circuit board flip heat dissipation block of heat dissipation capability external radiating cap encapsulating structure.
The purpose of this utility model is achieved in that the external radiating cap encapsulating structure of a kind of chip of printed circuit board flip heat dissipation block, include the single or multiple lift printed substrate that is carried of chip, chip below, conduction or nonconducting heat conduction bonding material I and the plastic-sealed body between metal coupling, chip and the described single or multiple lift printed substrate that chip is used to the signal interconnection of single or multiple lift printed substrate, above described chip, be provided with radiating block, be equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; Be provided with radiating cap above described radiating block, be equipped with conduction or nonconducting heat conduction bonding material III between this radiating cap and the described radiating block, described radiating cap is sleeved on the plastic-sealed body.
The beneficial effects of the utility model are:
The utility model passes through addition radiating block above chip, and sets up radiating cap outside plastic-sealed body, serves as the function of the heat radiation of high heat, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the external radiating cap encapsulating structure of a utility model chip of printed circuit board flip heat dissipation block schematic diagram.
Reference numeral among the figure:
Conduction or nonconducting heat conduction bonding material I2, chip 3, conduction or nonconducting heat conduction bonding material II6, radiating block 7, plastic-sealed body 8, printed substrate 9, metal coupling 10, radiating cap 11, conduction or nonconducting heat conduction bonding material III13.
(5) embodiment
Referring to Fig. 5, Fig. 5 is the external radiating cap encapsulating structure of a utility model chip of printed circuit board flip heat dissipation block schematic diagram.As seen from Figure 5, the external radiating cap encapsulating structure of the utility model chip of printed circuit board flip heat dissipation block, include the single or multiple lift printed substrate 9 that is carried of chip 3, chip below, conduction or nonconducting heat conduction bonding material I2 and the plastic-sealed body 8 between metal coupling 10, chip and the described single or multiple lift printed substrate that chip is used to the signal interconnection of single or multiple lift printed substrate, above described chip 3, be provided with radiating block 7, be equipped with conduction or nonconducting heat conduction bonding material II6 between this radiating block 7 and the described chip 3; Be provided with radiating cap 11 above described radiating block 7, be equipped with conduction or nonconducting heat conduction bonding material III13 between this radiating cap 11 and the described radiating block 7, described radiating cap 11 is sleeved on the plastic-sealed body 8.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.
The material of described metal coupling 10 can be tin, gold or alloy etc.
The material of described radiating cap 11 can be copper, aluminium, pottery or alloy etc.

Claims (4)

1. external radiating cap encapsulating structure of chip of printed circuit board flip heat dissipation block, include chip (3), the single or multiple lift printed substrate (9) that is carried of chip below, the metal coupling that chip is used to the signal interconnection of single or multiple lift printed substrate (10), conduction between chip and the described single or multiple lift printed substrate or nonconducting heat conduction bonding material I (2) and plastic-sealed body (8), it is characterized in that being provided with radiating block (7), be equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3) in described chip (3) top; Be provided with radiating cap (11) in described radiating block (7) top, be equipped with conduction or nonconducting heat conduction bonding material III (13) between this radiating cap (11) and the described radiating block (7), described radiating cap (11) is sleeved on the plastic-sealed body (8).
2. the external radiating cap encapsulating structure of a kind of chip of printed circuit board flip heat dissipation block according to claim 1, the material that it is characterized in that described radiating block (7) is copper, aluminium, pottery or alloy.
3. the external radiating cap encapsulating structure of a kind of chip of printed circuit board flip heat dissipation block according to claim 1, the material that it is characterized in that described metal coupling (10) is tin, gold or alloy.
4. the external radiating cap encapsulating structure of a kind of chip of printed circuit board flip heat dissipation block according to claim 1, the material that it is characterized in that described radiating cap (11) is copper, aluminium, pottery or alloy.
CN2010201187845U 2010-01-30 2010-01-30 Packaging structure of printed circuit board with flip chip and radiating block connected with external radiating cap Expired - Fee Related CN201623066U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201187845U CN201623066U (en) 2010-01-30 2010-01-30 Packaging structure of printed circuit board with flip chip and radiating block connected with external radiating cap

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201187845U CN201623066U (en) 2010-01-30 2010-01-30 Packaging structure of printed circuit board with flip chip and radiating block connected with external radiating cap

Publications (1)

Publication Number Publication Date
CN201623066U true CN201623066U (en) 2010-11-03

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CN2010201187845U Expired - Fee Related CN201623066U (en) 2010-01-30 2010-01-30 Packaging structure of printed circuit board with flip chip and radiating block connected with external radiating cap

Country Status (1)

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CN (1) CN201623066U (en)

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101103

Termination date: 20140130