CN201501940U - Improved heater structure of straight pull single crystal furnace - Google Patents
Improved heater structure of straight pull single crystal furnace Download PDFInfo
- Publication number
- CN201501940U CN201501940U CN2009201225026U CN200920122502U CN201501940U CN 201501940 U CN201501940 U CN 201501940U CN 2009201225026 U CN2009201225026 U CN 2009201225026U CN 200920122502 U CN200920122502 U CN 200920122502U CN 201501940 U CN201501940 U CN 201501940U
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- well heater
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Abstract
The utility model relates to a heater, and aims to provide an improved heater structure of a straight pull single crystal furnace. The heater comprises an annular graphite heater; open slots are alternately and uniformly formed on the annular graphite heater in the axis direction; a thinning heating section is arranged on the annular graphite heater; the area of the radial cross section of the thinning heating section is two thirds to three fourths of that of other parts of the heat; and the thinning heating section refers to the part of the heater from the bottom to the position which is one fifth to the one fourth of the overall height of the heater. By adopting the structure provided by the utility model, heating power increases at the part of the heater, which becomes thinner, the axial distribution is changed, and the bottom of the annular graphite heater is indirectly endowed with the additional function of a bottom heater, therefore, just with the structural design of one graphite heater, the effect of one annular graphite heater and one bottom heater in the prior art is achieved. The utility model not only reduces the equipment cost, but also reduces the manufacturing cost of the graphite heater and simplifies the operation procedures.
Description
Technical field
The utility model relates to a kind of heater assembly, in particular, relates to a kind of improvement structure of graphite heater of czochralski crystal growing furnace.
Background technology
Pulling of crystals manufacturing process (Czochralski, CZ method) is that many silicon wafers of raw material piece is put into quartz crucible, and heating and melting in single crystal growing furnace has only a diameter the bar-shaped crystal seed (seed crystal) of 10mm to immerse in the liquation again.Under suitable temperature, the Siliciumatom in the liquation can become single crystal along the crystallization of Siliciumatom arrangement architecture formation rule on the solid-liquid interface of crystal seed.The rotation slight crystal seed upwards promotes, and continues crystallization on the single crystal that the Siliciumatom in the liquation can form in front, and continues its regular atomic arrangement structure.If whole crystalline environment is stable, the formation crystallization that just can go round and begin again forms the silicon single-crystal crystal that columniform atomic arrangement is neat, i.e. a silicon single crystal ingot at last.
Single crystal growing furnace mostly adopts graphite heater that the polycrystal raw material in the quartz crucible is carried out heat fused at present.The common graphite well heater is evenly to slot on the annular graphite, energising heating on the electrode leg then, and general voltage is less than 60VDC, and 22 inches thermal field maximum heating power are at 165kw.The axial resistance of this well heater is even, and heating power is axially even, and the thermal field gradient needed when big thermal field was considered crystal pulling, and a bottom graphite heater is installed below ring heater again, applies the bottom heating power of maximum 20kw as 24 inches thermal field bottoms.At present domestic 22 inches thermal fields all are single heater structures, and 24 inches and above thermal field are the double-heater structures.Being provided with like this increased the equipment input, and complicated operationization.
The utility model content
The purpose of this utility model is, overcomes deficiency of the prior art, and a kind of improved structure of heater of czochralski crystal growing furnace is provided.
Improved structure of heater of czochralski crystal growing furnace in the utility model, be included in and arranged annular graphite heater mutual and that evenly slot on the axis direction, an attenuate heating zone is set on annular graphite heater, the radial cross-section of attenuate heating zone long-pending for the radial cross-section at all the other positions of well heater long-pending 2/3～3/4; Described attenuate heating zone is meant from the bottom of well heater 1/5～1/4 part to total height.
As a kind of improvement, described attenuate heating zone has identical radial thickness with all the other positions of well heater, and the groove width of attenuate heating zone is greater than the groove width at all the other positions of well heater.
As a kind of improvement, described attenuate heating zone has identical groove width with all the other positions of well heater, and the radial thickness of attenuate heating zone is less than the radial thickness at all the other positions of well heater.
As a kind of improvement, the groove width of described attenuate heating zone is greater than the groove width at all the other positions of well heater, and the radial thickness of attenuate heating zone is less than the radial thickness at all the other positions of well heater.
The beneficial effects of the utility model are:
Follow-on well heater in the part of the hypomere 1/5～1/4 of well heater height, carries out attenuate 1/4～1/3 to the heating sheet on the basis of former ring heater, change the distribution of the axial resistance of well heater with this.Because the direct current work of the logical 0～60VDC of well heater, therefore make heating power increase at the attenuate place of well heater, axial distribution obtains changing, between be connected on ring heater bottom and form an additional bottom heater function, thereby the structure design by single graphite heater but can reach the effect that circular bottom part well heater in original technology adds two well heaters of bottom bottom heater.Not only reduced the equipment input, also reduced the manufacturing cost of graphite heater, simplified procedures.
Description of drawings
Fig. 1 is the annular graphite heater structural representation of existing standard;
Fig. 2 is the vertical view of annular graphite heater among Fig. 1;
Fig. 3 is the structural representation of the bottom heater that is used with annular graphite heater;
Fig. 4 is the structural representation of a kind of well heater in the utility model;
Fig. 5 is the structural representation of another kind of well heater in the utility model;
Fig. 6 be among Fig. 5 A-A to sectional view.
Reference numeral among the figure is: attenuate heating zone 1, attenuate heating zone 2.
Embodiment
In conjunction with the accompanying drawings, below the utility model is elaborated.
The improvement structure of the graphite heater of the czochralski crystal growing furnace in the specific embodiment 1 is as shown in Figure 4:
An attenuate heating zone 1 is set on common annular graphite heater, the radial cross-section of attenuate heating zone 1 long-pending for the radial cross-section at all the other positions of well heater long-pending 2/3～3/4; Described attenuate heating zone 1 is meant from the bottom of well heater 1/5～1/4 part to total height.All the other positions of attenuate heating zone 1 and well heater have identical radial thickness, and the groove width of attenuate heating zone 1 is greater than the groove width at all the other positions of well heater.
The improvement structure of the graphite heater of the czochralski crystal growing furnace in the specific embodiment 2 is shown in Fig. 5,6:
An attenuate heating zone 2 is set on common annular graphite heater, the radial cross-section of attenuate heating zone 2 long-pending for the radial cross-section at all the other positions of well heater long-pending 2/3～3/4; Described attenuate heating zone 2 is meant from the bottom of well heater 1/5～1/4 part to total height.All the other positions of attenuate heating zone 2 and well heater have identical groove width, the radial thickness of attenuate heating zone 2 less than all the other positions of well heater radial thickness.
As long as keep the radial section of attenuate heating zone 1,2 long-pending consistent, the effect of using this two various methodologies is the same.
As a same reason, also can obtain the content of specific embodiment 3:
An attenuate heating zone is set on common annular graphite heater, the radial cross-section of attenuate heating zone long-pending for the radial cross-section at all the other positions of well heater long-pending 2/3～3/4; Described attenuate heating zone is meant from the bottom of well heater 1/5～1/4 part to total height.The groove width of attenuate heating zone is greater than the groove width at all the other positions of well heater, the radial thickness of attenuate heating zone less than all the other positions of well heater radial thickness.This is actually the combination of top two embodiment technical characterictics.
Specific embodiment 4:
Adopt 22 inches well heaters, peak power is 165KW, and heating sheet total electrical resistance is 24 milliohms, applies 120KW power when changing material, applies 80kw power when isometrical, well heater height overall 500mm.The lower height of common standard type well heater shown in Figure 1 is a 125mm heating sheet, and power is 30KW when changing material, and power is 20KW when isometrical.By Design and Machining, make that the heating sheet sectional area of well heater bottom 125mm reduces 1/3 after, single crystal growing furnace bottom 125mm heating sheet power when changing material is 40kw, power is 26.7kw when isometrical, this quite with increased a small-sized bottom heater.
At last, it should be noted that above what enumerate only is specific embodiment of the utility model.Obviously, the utility model is not limited to above embodiment, and a lot of distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from the disclosed content of the utility model all should be thought protection domain of the present utility model.
Claims (4)
1. improved structure of heater of czochralski crystal growing furnace, be included in and arranged annular graphite heater mutual and that evenly slot on the axis direction, it is characterized in that, an attenuate heating zone is set on annular graphite heater, the radial cross-section of attenuate heating zone long-pending for the radial cross-section at all the other positions of well heater long-pending 2/3～3/4; Described attenuate heating zone is meant from the bottom of well heater 1/5～1/4 part to total height.
2. improved structure of heater of czochralski crystal growing furnace according to claim 1 is characterized in that, described attenuate heating zone has identical radial thickness with all the other positions of well heater, and the groove width of attenuate heating zone is greater than the groove width at all the other positions of well heater.
3. improved structure of heater of czochralski crystal growing furnace according to claim 1 is characterized in that, described attenuate heating zone has identical groove width with all the other positions of well heater, and the radial thickness of attenuate heating zone is less than the radial thickness at all the other positions of well heater.
4. improved structure of heater of czochralski crystal growing furnace according to claim 1, it is characterized in that, the groove width of described attenuate heating zone is greater than the groove width at all the other positions of well heater, and the radial thickness of attenuate heating zone is less than the radial thickness at all the other positions of well heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201225026U CN201501940U (en) | 2009-06-22 | 2009-06-22 | Improved heater structure of straight pull single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201225026U CN201501940U (en) | 2009-06-22 | 2009-06-22 | Improved heater structure of straight pull single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201501940U true CN201501940U (en) | 2010-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201225026U Expired - Lifetime CN201501940U (en) | 2009-06-22 | 2009-06-22 | Improved heater structure of straight pull single crystal furnace |
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| Country | Link |
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| CN (1) | CN201501940U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI745974B (en) * | 2019-06-18 | 2021-11-11 | 大陸商上海新昇半導體科技有限公司 | Semiconductor crystal growing apparatus |
-
2009
- 2009-06-22 CN CN2009201225026U patent/CN201501940U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI745974B (en) * | 2019-06-18 | 2021-11-11 | 大陸商上海新昇半導體科技有限公司 | Semiconductor crystal growing apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: ZHEJIANG JINGSHENG MECHANICAL AND ELECTRICAL CO., Free format text: FORMER NAME: SHANGYU JINGSHENG M+E CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 312300 No. 218 West Tongjiang Road, Shangyu economic and Technological Development Zone, Zhejiang Patentee after: Zhejiang Jingsheng Electrical and Mechanical Co., Ltd. Address before: 312364 No. 1, Tang Pu Industrial Zone, Shaoxing, Zhejiang, Shangyu Patentee before: Shangyu Jingsheng M&E Co., Ltd. |
|
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhu Liang Inventor after: Zhang Jun Inventor after: Cao Jianwei Inventor after: Qiu Minxiu Inventor before: Cao Jianwei Inventor before: Zhang Jun Inventor before: Zhu Liang Inventor before: Qiu Minxiu |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CAO JIANWEI ZHANG JUN ZHU LIANG QIU MINXIU TO: ZHU LIANG ZHANG JUN CAO JIANWEI QIU MINXIU |
|
| CX01 | Expiry of patent term |
Granted publication date: 20100609 |
|
| CX01 | Expiry of patent term |