CN201490187U - Novel direct bonding power module of power terminal - Google Patents
Novel direct bonding power module of power terminal Download PDFInfo
- Publication number
- CN201490187U CN201490187U CN200920196141XU CN200920196141U CN201490187U CN 201490187 U CN201490187 U CN 201490187U CN 200920196141X U CN200920196141X U CN 200920196141XU CN 200920196141 U CN200920196141 U CN 200920196141U CN 201490187 U CN201490187 U CN 201490187U
- Authority
- CN
- China
- Prior art keywords
- power terminal
- base plate
- lower cover
- module
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Die Bonding (AREA)
Abstract
The utility model discloses a novel direct bonding power module of a power terminal, which comprises a heat insulation base plate, a direct copper covering base plate, a chip, a power terminal and a case, wherein the case consists of an upper cover and a lower cover, the power terminal is inserted into the lower cover in a mode through machinery, in addition, the power terminal and the lower cover are connected into a whole body, the upper cover presses the power terminal through two projected structures arranged on the power terminal, and the power terminal can be ensured not to be pulled up during installation and use. The utility model eliminates the welding fatigue, reduces the spurious inductance, and greatly improves the bounding reliability of the power terminal.
Description
Technical field
The utility model relates to a kind of power model, specifically a kind of novel power module for directly bonding power terminal.
Background technology
Power model comprises insulated gate bipolar transistor (IGBT) module, rectifier diode module, replys diode (led) module soon, MOSFET module, intelligent power (IPM) module etc.The traditional packing forms of these power models exists many problems, and is not high such as bonding reliability, and stray inductance is bigger etc.Now be that example describes with Fig. 3.Shown in Figure 3 is traditional IGBT module, and traditional IGBT module comprises igbt chip 14, diode chip for backlight unit 16, direct copper-clad base plate (DBC) 18, heat-radiating substrate 19, power terminal 15, aluminum steel 13, plastic casing 12 and silicon gel 17.As seen from Figure 3, traditional power terminal 15 is to be reflow soldered on the conductive copper layer on direct copper-clad base plate (DBC) 18 surfaces by solder.Because of the coefficient of thermal expansion of the conductive copper layer of the coefficient of thermal expansion of used scolder and power terminal 15, insulated substrate (DBC) 18 has difference, and solder this under thermal stress and temperature action, be easy to generate fatigue, cause the reliability of module is impacted.Particularly when temperature changed significantly, module can produce very big stress, and the reliability of module is lowered.So in order to improve the reliability of module under the condition of temperature acute variation, the polycrystalline substance of the power terminal 15 of module. generally be designed to reduce the S bending formula of stress, but so, the improvement of stress problem brings the increase of module stray inductance, has influenced the performance of product.
Summary of the invention
The purpose of this utility model is to design a kind of novel power module for directly bonding power terminal.
To be solved in the utility model is existing power model stray inductance height, the problem that bonding reliability is low.
In order to realize the purpose of this utility model, the technical solution adopted in the utility model is:
It comprises heat-radiating substrate, direct copper-clad base plate, chip, power terminal and shell, and shell is made up of loam cake and lower cover; Power terminal is seated in the power terminal groove of lower cover mechanically, and power terminal and lower cover after being seated link into an integrated entity; Power terminal is provided with two bulge-structures, on cover and be provided with the pressure tongue, press tongue to be pressed on the bulge-structure.
Another feature of the present utility model is that loam cake uses screw fixings to be in the same place with lower cover.
Another feature of the present utility model is that direct copper-clad base plate is reflow soldered on the direct copper-clad base plate by solder, and chip is reflow soldered on the direct copper-clad base plate by solder.
Another feature of the present utility model is power terminal and directly connects by the aluminum steel bonding between the copper-clad base plate.
The size of another feature shell of the present utility model is 94mmX34mmX17mm, or 94mmX48mmX17mm.
Advantage of the present utility model: the utility model is owing to avoided traditional power terminal welding manner, directly use mode that machine inserts by machinery that power terminal is seated power terminal groove internal fixation in lower cover, special bulge-structure and the loam cake of power terminal presses tongue to cooperate simultaneously, so the utility model has guaranteed power terminal and has not been pulled up when installing and using, prevented the inefficacy in power terminal bonding zone, the reliability of power terminal bonding is improved greatly.The utility model can reduce the influence of power terminal thermal stress to a great extent, has eliminated solder joint fatigue, has reduced stray inductance, has greatly improved the serviceability of module.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is a power terminal part enlarged diagram.
Fig. 3 is the structural representation of traditional IGBT module.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
Be that example describes now with as depicted in figs. 1 and 2 insulated gate bipolar transistor (IGBT) module.The utility model comprises insulated gate bipolar transistor chip 7, diode chip for backlight unit 6, direct copper-clad base plate (DBC) 8, heat-radiating substrate 5, power terminal 4, loam cake 3 and lower cover 9.
This fixed structure of power terminal 4 has guaranteed that power terminal 4 is not pulled up, and has prevented the inefficacy in power terminal 4 bonding zones when installing and using.Power terminal 4 of the present utility model can bear 200N power, and this power terminal 4 is difficult to be pulled from shell.
Insulated gate bipolar transistor chip 7 and diode chip for backlight unit 6 by reflow soldering on the conductive copper layer of direct copper-clad base plate (DBC) 8.Directly copper-clad base plate (DBC) 8 directly is welded on the heat-radiating substrate 5 by soldering.Realize being electrically connected by the aluminum steel bonding between insulated gate bipolar transistor chip 7, diode chip for backlight unit 6 and direct copper-clad base plate (DBC) the 8 corresponding conductive layers, realize being electrically connected by the aluminum steel bonding between the place of drawing accordingly on power terminal 4 and the direct copper-clad base plate (DBC) 8.
At least one group of the chipset that the utility model inside modules is made of a slice insulated gate bipolar transistor chip 7, a slice diode chip for backlight unit 6.
The size of shell of the present utility model is 94mmX34mmX17mm, or 94mmX48mmX17mm.
Why power model of the present utility model has lower stray inductance, its reason: the one, because power terminal 4 of the present utility model directly is fixed on the shell, do not have to use tired easily tin cream, so be not subjected to the influence of weld thermal stress.The 2nd, because power terminal 4 is securely fixed in lower cover 9 inside very much, so need not consider the Stress Release of installing.The 3rd, because the utility model adopts a welding procedure,, optimize the welding performance of chip so can select only scolder according to the chips welding performance demands.
Production method of the present utility model is as follows:
At first injection mo(u)lding loam cake 3 and lower cover 9 then power terminal 4, insert with machine in the power terminal groove of lower cover 9 mechanically, then according to traditional insulated gate bipolar crystal module explained hereafter.With traditional technology difference be that the power section bonding is drawn out on the bonding face of power terminal 4 before the shell encapsulation.
The utility model power terminal 4 fixed forms and the structure that has are except being applicable to described insulated gate bipolar transistor (IGBT) module, also be applicable to the rectifier diode module, the fly-wheel diode module, MOSFET module, intelligent power (IPM) module constant power module.
Claims (5)
1. novel power module for directly bonding power terminal, comprise heat-radiating substrate, direct copper-clad base plate, chip, power terminal and shell, shell is made up of loam cake and lower cover, it is characterized in that power terminal is seated in the power terminal groove of lower cover mechanically, power terminal and lower cover after being seated link into an integrated entity; Power terminal is provided with bulge-structure, on cover and be provided with the pressure tongue, press tongue to be pressed on the bulge-structure.
2. a kind of novel power module for directly bonding power terminal according to claim 1 is characterized in that loam cake and lower cover use screw fixings to be in the same place.
3. a kind of novel power module for directly bonding power terminal according to claim 1 is characterized in that direct copper-clad base plate is reflow soldered on the direct copper-clad base plate by solder, and chip is reflow soldered on the direct copper-clad base plate by solder.
4. a kind of novel power module for directly bonding power terminal according to claim 1 is characterized in that power terminal and directly passes through the aluminum steel bonding between the copper-clad base plate connecting.
5. a kind of novel power module for directly bonding power terminal according to claim 1, the size that it is characterized in that shell are 94mm * 34mm * 17mm, or 94mm * 48mm * 17mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920196141XU CN201490187U (en) | 2009-09-10 | 2009-09-10 | Novel direct bonding power module of power terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920196141XU CN201490187U (en) | 2009-09-10 | 2009-09-10 | Novel direct bonding power module of power terminal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201490187U true CN201490187U (en) | 2010-05-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920196141XU Expired - Lifetime CN201490187U (en) | 2009-09-10 | 2009-09-10 | Novel direct bonding power module of power terminal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201490187U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078477A (en) * | 2013-01-28 | 2013-05-01 | 江苏宏微科技股份有限公司 | Intelligent power module terminal and connection structure thereof |
| CN103178042A (en) * | 2011-12-26 | 2013-06-26 | 江苏宏微科技有限公司 | Nut capable of achieving ultrathin packaging of power module |
| CN103779282A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Power semiconductor module convenient to install |
| CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
| CN107305875A (en) * | 2016-04-19 | 2017-10-31 | 现代摩比斯株式会社 | Bidirectional semiconductor packaging part |
| CN107683028A (en) * | 2017-09-26 | 2018-02-09 | 中航（重庆）微电子有限公司 | A kind of power model welding tooling |
-
2009
- 2009-09-10 CN CN200920196141XU patent/CN201490187U/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178042A (en) * | 2011-12-26 | 2013-06-26 | 江苏宏微科技有限公司 | Nut capable of achieving ultrathin packaging of power module |
| CN103078477A (en) * | 2013-01-28 | 2013-05-01 | 江苏宏微科技股份有限公司 | Intelligent power module terminal and connection structure thereof |
| CN103779282A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Power semiconductor module convenient to install |
| CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
| CN103779282B (en) * | 2014-01-24 | 2016-08-24 | 嘉兴斯达微电子有限公司 | A kind of power semiconductor modular being easily installed |
| CN103780066B (en) * | 2014-01-24 | 2017-05-03 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
| CN107305875A (en) * | 2016-04-19 | 2017-10-31 | 现代摩比斯株式会社 | Bidirectional semiconductor packaging part |
| CN107305875B (en) * | 2016-04-19 | 2019-11-05 | 现代摩比斯株式会社 | Bidirectional semiconductor packaging part |
| CN107683028A (en) * | 2017-09-26 | 2018-02-09 | 中航（重庆）微电子有限公司 | A kind of power model welding tooling |
| CN107683028B (en) * | 2017-09-26 | 2021-01-01 | 华润微电子（重庆）有限公司 | Power module welding tool |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Starpower Semiconductor Ltd. Assignor: Jiaxing Starpower Microelectronics Co., Ltd. Contract record no.: 2011330000621 Denomination of utility model: Novel power module for directly bonding power terminal Granted publication date: 20100526 License type: Exclusive License Record date: 20110530 |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100526 |