CN201449245U - Silicon slice thickness measuring capacitance sensor - Google Patents
Silicon slice thickness measuring capacitance sensor Download PDFInfo
- Publication number
- CN201449245U CN201449245U CN2009200470213U CN200920047021U CN201449245U CN 201449245 U CN201449245 U CN 201449245U CN 2009200470213 U CN2009200470213 U CN 2009200470213U CN 200920047021 U CN200920047021 U CN 200920047021U CN 201449245 U CN201449245 U CN 201449245U
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- electrode
- thickness measuring
- silicon chip
- chip thickness
- capacitive transducer
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Abstract
The utility model discloses a silicon slice thickness measuring capacitance sensor, which comprises an outer casing body (1). A structure component, electrodes and electrode extraction ends are installed inside the outer casing body (1); the electrodes include a center circular electrode (2) and a radial annular electrode (3); the areas of the center circular electrode (2) and the radial annular electrode (3) are equal; the radial annular electrode (3) is arranged on the periphery of the center circular electrode (2); the center circular electrode (2) and the radial annular electrode (3) are concentrically arranged; insulators are filled in a gap between the center circular electrode (2) and the radial annular electrode (3); and the electrode extraction ends (4) are encapsulated and fixed by the insulators. The silicon slice thickness measuring capacitance sensor is adaptable to non-contact measuring systems measuring the silicon slice thickness of single crystal silicon and polysilicon in non-contact manner, and has simple structure, low cost and reliable performance.
Description
Technical field
The utility model relates to a kind of silicon chip thickness measuring capacitive transducer.
Background technology
For the measurement of silicon wafer thickness, the past tradition is to adopt mechanical system, promptly is to revolve dial gauge with slide calliper rule or Luo to measure.But such metering system may damage silicon chip surface, cause the silicon chip fragmentation.Thereby, research and develop a kind of contactless metering system, be that actual foreground is arranged very much.
As a kind of novel non-cpntact measurement monocrystalline silicon, the system of the also automatic calculated thickness mean deviation of polysilicon silicon chip thickness, as shown in Figure 3, include X, a Y to planar central two capacitive transducers are installed with one heart along Z axle corresponding circle hole place, its measurement face is relative.One of them is installed in the top of workplace; Another is installed in the below of workplace in the hole.
In this system, the silicon chip thickness measuring is measured to close and is: Si δ=D-(Cu Δ+Cd Δ), and in the formula,
Si δ: the thickness of silicon chip;
D: total distance of two capacitive transducer end faces;
The Cu Δ: a top capacitive transducer end face and silicon chip are measured the distance of face;
The Cd Δ: a following capacitive transducer end face and silicon chip are measured the distance of face.
Thereby in said system, designing satisfactory capacitive transducer is one of necessary condition.
The utility model content
The purpose of this utility model is: a kind of silicon chip thickness measuring capacitive transducer is provided, and it can be applicable in the contactless measuring system of non-cpntact measurement monocrystalline silicon, polysilicon silicon chip thickness, and simple in structure, cost is low, dependable performance.
The technical solution of the utility model is: a kind of silicon chip thickness measuring capacitive transducer, and it includes shell, inner mounting structure spare, electrode, electrode leads to client; Described electrode includes central circular electrode and radial ringed electrode, and described central circular electrode and radial ringed electrode area equate that radial ringed electrode is located at central circular electrode periphery, and both are provided with one heart, and gap is filled with insulator between it; Described electrode leads to client is fixed by the insulator embedding.
Below technique scheme is described further:
Described inner mounting structure spare is a hard teflon insulation structural member.
Described insulator is an epoxy resin.
Described central circular electrode and radial ringed electrode are stainless steel electrode.
Described central circular electrode and radial ringed interelectrode gap are 0.12～0.18mm.
Described central circular electrode and radial ringed interelectrode gap are 0.15mm.
Described shell is a stainless steel casing.
Described shell is cylindrical, external diameter
10～20mm, length 10～50mm.
Described shell is cylindrical, external diameter
13mm, length 20mm.
The utlity model has following advantage:
1, silicon chip thickness measuring capacitive transducer of the present utility model can be applicable in the contactless measuring system of non-cpntact measurement monocrystalline silicon, polysilicon silicon chip thickness, and simple in structure, cost is low, dependable performance.
2, silicon chip thickness measuring capacitive transducer of the present utility model, because its ad hoc structure and material, susceptibility to the silicon materials medium is stronger, thus when its surface during near silicon chip capacitance will be affected, and capacitance and spacing (capacitive surface and silicon chip surface) approximately linear change.The mode of utilizing this principle to measure electric capacity is measured spacing (thickness) indirectly and is realized non-contact mode measuring spacing (thickness), thereby has avoided the traditional mechanical mode to measure the mechanical damage that may cause.
Description of drawings
The utility model will be further described below in conjunction with drawings and Examples:
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is structural representation of the present utility model (side);
Fig. 3 is for using the work synoptic diagram of contactless measuring system of the present utility model.
Wherein: 1 shell; 2 central circular electrodes; 3 radial ringed electrodes; 4 electrode leads to client; 10 capacitive transducers; 20 capacitive transducers; 50 silicon slices under test; 60 workplaces.
Embodiment
Embodiment: as shown in Figure 1 and Figure 2, a kind of silicon chip thickness measuring capacitive transducer, it includes shell 1, inner mounting structure spare, electrode, electrode leads to client 4.Shell 1 is cylindrical, external diameter
13mm, length 20mm.
Electrode includes central circular electrode 2 and radial ringed electrode 3.Central circular electrode 2 and radial ringed electrode 3 areas equate that radial ringed electrode 3 is located at central circular electrode 2 peripheries, and both are provided with one heart, and gap is 0.15mm and fills with epoxy resin between it, has channel effect and insulating property preferably.
Inner mounting structure spare is a hard teflon insulation structural member.
Electrode is a stainless steel electrode.Shell 1 is a stainless steel casing.Shell 1 is all used the SU304 stainless steel with the electrode material.
The electrode connecting line butt-joint,
0.9mm copper extension line is cold pressure welding.Capacitive transducer is measured on face and the casing appearance and is reached minute surface, electrode leads to client 4 epoxy resin embedding.
The manufacturing process of capacitive transducer of the present utility model and condition: the accessory size of a strictness, visual testing; The degreasing of b ultrasound wave soap lye is handled; C cleans, oven dry; Assemble with the special tooling anchor clamps in the dustless plexiglass tent of d; E measures conducting and insulation resistance; The embedding of f epoxy resin, oven dry; G measurement conducting and insulation resistance, capacitance (between 10P～12P).
Should be pointed out that for the utility model also to have the embodiment of multiple conversion and remodeling, be not limited to the specific embodiment of above-mentioned embodiment through proving absolutely.The foregoing description is as just explanation of the present utility model, rather than to restriction of the present utility model.In a word, protection domain of the present utility model should comprise those conspicuous to those skilled in the art conversion or substitute and remodeling.
Claims (9)
1. silicon chip thickness measuring capacitive transducer, it is characterized in that: it includes shell (1), inner mounting structure spare, electrode, electrode leads to client; Described electrode includes central circular electrode (2) and radial ringed electrode (3), described central circular electrode (2) and radial ringed electrode (3) area equate, radial ringed electrode (3) is located at central circular electrode (2) periphery, and both are provided with one heart, and gap is filled with insulator between it; Described electrode leads to client (4) is fixed by the insulator embedding.
2. silicon chip thickness measuring capacitive transducer according to claim 1 is characterized in that: described inner mounting structure spare is a hard teflon insulation structural member.
3. silicon chip thickness measuring capacitive transducer according to claim 1 is characterized in that: described insulator is an epoxy resin.
4. silicon chip thickness measuring capacitive transducer according to claim 1 is characterized in that: described electrode is a stainless steel electrode.
5. silicon chip thickness measuring capacitive transducer according to claim 1 is characterized in that: the gap between described central circular electrode (2) and radial ringed electrode (3) is 0.12～0.18mm.
6. silicon chip thickness measuring capacitive transducer according to claim 1 or 5, it is characterized in that: the gap between described central circular electrode (2) and radial ringed electrode (3) is 0.15mm.
7. silicon chip thickness measuring capacitive transducer according to claim 1 is characterized in that: described shell (1) is a stainless steel casing.
8. silicon chip thickness measuring capacitive transducer according to claim 1 is characterized in that: described shell (1) is cylindrical, external diameter
Length 10～50mm.
9. according to claim 1 or 8 described silicon chip thickness measuring capacitive transducers, it is characterized in that: described shell (1) is cylindrical, external diameter
Length 20mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200470213U CN201449245U (en) | 2009-07-07 | 2009-07-07 | Silicon slice thickness measuring capacitance sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200470213U CN201449245U (en) | 2009-07-07 | 2009-07-07 | Silicon slice thickness measuring capacitance sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201449245U true CN201449245U (en) | 2010-05-05 |
Family
ID=42553966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200470213U Expired - Fee Related CN201449245U (en) | 2009-07-07 | 2009-07-07 | Silicon slice thickness measuring capacitance sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201449245U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109724508A (en) * | 2019-01-26 | 2019-05-07 | 北京航空航天大学 | Pad pasting flowing liquid membrane thickness conductance type measurement sensor, device, system and caliberating device |
| CN110631465A (en) * | 2019-09-16 | 2019-12-31 | 太原理工大学 | Ash deposition and slagging on-line monitoring device and method based on capacitance principle differential measurement |
| CN111089533A (en) * | 2019-12-10 | 2020-05-01 | 江苏大学 | Thickness detection device and method based on semi-cylindrical shell capacitor |
| CN113878675A (en) * | 2021-10-21 | 2022-01-04 | 张牧春 | Violin case back arc processingequipment |
-
2009
- 2009-07-07 CN CN2009200470213U patent/CN201449245U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109724508A (en) * | 2019-01-26 | 2019-05-07 | 北京航空航天大学 | Pad pasting flowing liquid membrane thickness conductance type measurement sensor, device, system and caliberating device |
| CN109724508B (en) * | 2019-01-26 | 2020-08-11 | 北京航空航天大学 | Conductive measurement sensor, device, system and calibration device for thickness of film-attached flowing liquid film |
| CN110631465A (en) * | 2019-09-16 | 2019-12-31 | 太原理工大学 | Ash deposition and slagging on-line monitoring device and method based on capacitance principle differential measurement |
| WO2021052055A1 (en) * | 2019-09-16 | 2021-03-25 | 太原理工大学 | Device and method for on-line monitoring of dust accumulation and slagging and based on capacitance principle differential measurement |
| CN110631465B (en) * | 2019-09-16 | 2021-04-16 | 太原理工大学 | Ash deposition and slagging on-line monitoring device and method based on capacitance principle differential measurement |
| US20220155249A1 (en) * | 2019-09-16 | 2022-05-19 | Taiyuan University Of Technology | Online monitoring device and method for fouling and slagging based on capacitance principle differential measurement |
| US12092599B2 (en) * | 2019-09-16 | 2024-09-17 | Taiyuan University Of Technology | Online monitoring device and method for fouling and slagging based on capacitance principle differential measurement |
| CN111089533A (en) * | 2019-12-10 | 2020-05-01 | 江苏大学 | Thickness detection device and method based on semi-cylindrical shell capacitor |
| CN113878675A (en) * | 2021-10-21 | 2022-01-04 | 张牧春 | Violin case back arc processingequipment |
| CN113878675B (en) * | 2021-10-21 | 2022-07-22 | 张牧春 | Violin case back arc processingequipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100505 Termination date: 20150707 |
|
| EXPY | Termination of patent right or utility model |