CN201224778Y - Apparatus for improving crystal growth speed of monocrystalline sillicon furnace - Google Patents
Apparatus for improving crystal growth speed of monocrystalline sillicon furnace Download PDFInfo
- Publication number
- CN201224778Y CN201224778Y CNU2008201093200U CN200820109320U CN201224778Y CN 201224778 Y CN201224778 Y CN 201224778Y CN U2008201093200 U CNU2008201093200 U CN U2008201093200U CN 200820109320 U CN200820109320 U CN 200820109320U CN 201224778 Y CN201224778 Y CN 201224778Y
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- water conservancy
- conservancy diversion
- draft tube
- inner core
- guide shell
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Abstract
The utility model belongs to a device for increasing the crystal growth speed of monocrystal silicon furnace, which is characterized in that: a draft tube with upper and lower end openings is arranged inside the hearth at the upper end of a quartz crucible; the draft tube is composed of an inner draft tube and outer draft tube, wherein the inner draft tube is in inverted cone shape, while the outer draft tube is in the shape of cylinder; the lower periphery of the outer draft tube is shrunk inwards and is connected with the outer periphery of the inner draft tube as a whole; the upper periphery of the inner draft tube is connected with the upper periphery of the outer draft tube as a whole and is fixedly locked at a lower heat preservation cover; an insulating material layer is arranged between the inner draft tube and the outer draft tube. The utility model can effectively ensure the mutual convergence of two temperatures inside the hearth and the growth speed of the crystal inside the hearth can be enhanced significantly; moreover, the utility model also has the advantages of improving the quality of silicon wafer and reducing production cost.
Description
Technical field
The utility model belongs to a kind of device that improves the monocrystaline silicon stove crystalline growth velocity.
Background technology
Monocrystaline silicon stove is mainly used in the production silicon semiconductor material, and monocrystaline silicon stove comprises silicon semiconductor material growth synthetic burner hearth, reaches rotation silicon wafer system and automatically controlled automatic system.The silicon seed of monocrystaline silicon stove promotes structure and adopts flexible axle, flexible axle is a wireline, the interior splined shaft of transmission shaft that passes casing is provided with wire wrapping wheel, wire wrapping wheel intersects at the intravital gland wheel of case with being coupling, be provided with the incoming line that the band damping is overlapped with the gland of the corresponding casing of two-wheeled joining, wireline one terminates on the wire wrapping wheel, and the incoming line that the other end passes band damping cover connects the weight that is positioned at main furnace chamber, and motor drives transmission shaft by reduction box and rotates.Weight then is used for promoting the silicon wafer of high temperature melting in the stove quartz pincers pot and makes its decrease temperature crystalline formation columnar silicon crystal gradually that makes progress.The speed of growth of silicon crystal depends on the decrease temperature crystalline speed that is melted in silicon wafer liquid silicon wafer liquid when upwards being promoted by weight of quartz crucible in the burner hearth to a great extent, the high temperature that this just requires promptly will to keep in the burner hearth to make in the quartz crucible fusing of silicon raw material keeps silicon wafer liquid to make the silicon wafer liquid relative low temperature of crystalline of catching a cold again in the burner hearth of quartz crucible upper end.Present monocrystaline silicon stove can not effectively guarantee overlapping of the interior two kinds of temperature of burner hearth, thereby makes crystalline growth velocity slower, causes the costliness of silicon crystal production cost.
Summary of the invention
The purpose of this utility model is a kind of device that improves the monocrystaline silicon stove crystalline growth velocity of design, can effectively guarantee overlapping of the interior two kinds of temperature of burner hearth, can increase substantially crystalline growth velocity in the burner hearth, improve the silicon wafer quality in addition, reduce the advantage of cost of manufacture.For this reason, the utility model adopts the guide shell that is provided with the upper and lower ends opening in the burner hearth of quartz crucible upper end, guide shell is made up of water conservancy diversion inner core and water conservancy diversion urceolus, the water conservancy diversion inner core is turbination, the water conservancy diversion urceolus is cylindrical, water conservancy diversion urceolus following peripheral is inwardly shunk with water conservancy diversion inner core neighboring and is fused, and water conservancy diversion inner core upper periphery and water conservancy diversion urceolus upper periphery fuse and fix on following insulation cover, are provided with insulation material layer between water conservancy diversion inner core and the water conservancy diversion urceolus.Said structure has reached the purpose of this utility model.
The utility model has the advantages that the guide shell that in the burner hearth of quartz crucible upper end, is provided with the upper and lower ends opening, guide shell is made up of guide shell inner core and water conservancy diversion urceolus, can effectively guarantee overlapping of the interior two kinds of temperature of burner hearth, make the inside and outside temperature difference of guide shell become big, thereby make the easier formation solid of silicic acid liquid, can increase substantially crystalline growth velocity in the burner hearth, improve crystalline growth velocity 30% in the burner hearth.Improve the silicon wafer quality in addition, make the product percentage of A-class goods reach 99.9%, reduce cost of manufacture 30%.And simple in structure, the making use cost is low, maintenance and easy to use effective.
Description of drawings
Figure is a structural representation of the present utility model
Specific embodiments
As shown in the figure, improvement part of the present utility model mainly concentrates on the guide shell that quartz crucible 7 upper ends are provided with, and all the other positions are conventional art, so be not repeated.Promptly establish the graphite crucible bar 13 by driven by motor in the body of heater lower end, graphite crucible bar upper end is provided with graphite crucible holder 12, and graphite crucible 8 lower ends are positioned at graphite crucible holder upper end, and quartz crucible 7 is positioned at the graphite crucible.Be provided with furnace bottom compressing tablet 16, furnace bottom protection plate 15, Graphite Electrodes 14, thermal insulation layer 11 and heat-preservation cylinder 10 successively in the body of heater of graphite crucible bar side.The inboard wall of furnace body of thermal insulation layer upper end is provided with insulation cover 3.The Graphite Electrodes upper end is provided with well heater 9, and well heater is a ring heater, is used to wrap up the graphite crucible, and the silicon material in the quartz crucible is carried out heat.
A kind of device that improves the monocrystaline silicon stove crystalline growth velocity mainly is made up of body of heater 1, burner hearth 2, graphite crucible, quartz crucible, graphite crucible bar and thermal insulation layer.Be provided with the guide shell of upper and lower ends opening in the burner hearth of quartz crucible upper end, guide shell is made up of water conservancy diversion inner core 4 and water conservancy diversion urceolus 6.The water conservancy diversion inner core is turbination.The water conservancy diversion urceolus is cylindrical.Water conservancy diversion urceolus following peripheral is inwardly shunk with water conservancy diversion inner core neighboring and is fused.Water conservancy diversion inner core upper periphery and water conservancy diversion urceolus upper periphery fuse and fix on insulation cover, are provided with insulation material layer 5 between water conservancy diversion inner core and the water conservancy diversion urceolus.Insulation material layer is slag wool or asbestos layer.Water conservancy diversion inner core and water conservancy diversion urceolus are made with refractory materials.
Described guide shell upper end open internal diameter is 1:0.5-0.8 with the length ratio of lower ending opening internal diameter.Make the water conservancy diversion inner core be turbination, make like this that upper and lower temperature difference becomes big in the guide shell, from but the easier formation solid of silicon solution has improved the speed of growth of silicon crystal.
Described guide shell lower ending opening external diameter is 1:1.2-1.5 with the length ratio of quartz crucible upper end open internal diameter.Thereby make the guide shell lower end except that reserving the lower ending opening that promotes for silicon crystal, all the other positions can effectively keep the high temperature in the quartz crucible as lid closed quartz crucible upper end open, save the energy.
In a word, the utility model can effectively guarantee overlapping of the interior two kinds of temperature of burner hearth, can increase substantially burner hearth Interior rate of crystalline growth improves the silicon wafer quality in addition, reduces the advantage of cost of manufacture.
Claims (3)
1, a kind of device that improves the monocrystaline silicon stove crystalline growth velocity, mainly by body of heater, burner hearth, the graphite crucible, quartz crucible, graphite crucible bar and thermal insulation layer are formed, it is characterized in that: the guide shell that in the burner hearth of quartz crucible upper end, is provided with the upper and lower ends opening, guide shell is made up of water conservancy diversion inner core and water conservancy diversion urceolus, the water conservancy diversion inner core is turbination, the water conservancy diversion urceolus is cylindrical, water conservancy diversion urceolus following peripheral is inwardly shunk with water conservancy diversion inner core neighboring and is fused, water conservancy diversion inner core upper periphery and water conservancy diversion urceolus upper periphery fuse and fix on following insulation cover, are provided with insulation material layer between water conservancy diversion inner core and the water conservancy diversion urceolus.
2, by the described a kind of device that improves the monocrystaline silicon stove crystalline growth velocity of claim 1, it is characterized in that: described guide shell upper end open internal diameter is 1:0.5-0.8 with the length ratio of lower ending opening internal diameter.
3, by the described a kind of device that improves the monocrystaline silicon stove crystalline growth velocity of claim 1, it is characterized in that: described guide shell lower ending opening external diameter is 1:1.2-1.5 with the length ratio of quartz crucible upper end open internal diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201093200U CN201224778Y (en) | 2008-07-18 | 2008-07-18 | Apparatus for improving crystal growth speed of monocrystalline sillicon furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201093200U CN201224778Y (en) | 2008-07-18 | 2008-07-18 | Apparatus for improving crystal growth speed of monocrystalline sillicon furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201224778Y true CN201224778Y (en) | 2009-04-22 |
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ID=40597661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201093200U Expired - Lifetime CN201224778Y (en) | 2008-07-18 | 2008-07-18 | Apparatus for improving crystal growth speed of monocrystalline sillicon furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201224778Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101956229A (en) * | 2010-05-26 | 2011-01-26 | 山东舜亦新能源有限公司 | Method for producing finished rod products with large charging capacity |
| CN102560625A (en) * | 2012-03-23 | 2012-07-11 | 内蒙古中环光伏材料有限公司 | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal |
-
2008
- 2008-07-18 CN CNU2008201093200U patent/CN201224778Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101956229A (en) * | 2010-05-26 | 2011-01-26 | 山东舜亦新能源有限公司 | Method for producing finished rod products with large charging capacity |
| CN102560625A (en) * | 2012-03-23 | 2012-07-11 | 内蒙古中环光伏材料有限公司 | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| DD01 | Delivery of document by public notice |
Addressee: Zhou Yuxin Document name: Notification that Application Deemed not to be Proposed |
|
| CX01 | Expiry of patent term |
Granted publication date: 20090422 |
|
| CX01 | Expiry of patent term |