CN201118535Y - A half bridge MOS grid transistor driving circuit - Google Patents
A half bridge MOS grid transistor driving circuit Download PDFInfo
- Publication number
- CN201118535Y CN201118535Y CNU2007200944136U CN200720094413U CN201118535Y CN 201118535 Y CN201118535 Y CN 201118535Y CN U2007200944136 U CNU2007200944136 U CN U2007200944136U CN 200720094413 U CN200720094413 U CN 200720094413U CN 201118535 Y CN201118535 Y CN 201118535Y
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- drive circuit
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Abstract
The utility model relates to a semi-bridge MOS grid transistor drive circuit, belonging to the electronic field. A high-end drive auxiliary power supply is connected with a high-end drive circuit, a low-end drive auxiliary power supply is connected with a low-end drive circuit, the high-end drive circuit is connected with a high-end MOS grid power switch and the low-end drive circuit is connected with a low-end MOS grid power switch. The semi-bridge MOS grid transistor drive circuit has the advantages that the structure is novel; negative supply is provided for the high-end drive circuit through a positive-negative supply conversion circuit; the entire drive circuit only needs a positive 10V - 20V, a negative 10V - 20V and a power supply. Accordingly, the size of a control transformer and the power supply number are greatly reduced in a project, the production cost is reduced and the system reliability is improved.
Description
Technical field
The utility model belongs to electronic applications.
Background technology
In the bridge-type power conversion unit, according to the structure of main circuit, its mos gate utmost point power switch transistor (MGT power field effect pipe and igbt) needs to adopt directly driving and isolation drive dual mode.Multi-channel driver circuit, control circuit, main circuit need be isolated mutually when adopting the isolation drive mode, in order to avoid cause catastrophic consequence.Isolation drive can be divided into electromagnetic isolation and photoelectricity is isolated dual mode.Photoelectricity isolates that to have a volume little, advantages of simple structure and simple, but exist common mode inhibition capacity poor, the shortcoming that transmission speed is slow.The speed of rapid light coupling is tens kHz only also.As isolated component, it is fast to have response speed with pulse transformer for electromagnetic isolation, the dielectric strength height of former secondary, and it is strong that the dv/dt common mode disturbances suppresses ability.But the maximum transmitted width of signal is subjected to the restriction of magnetic saturation characteristic, thereby the top of signal is difficult for transmission.And maximum duty cycle is limited in 50%.And the minimum widith of signal is limit by magnetizing current again.The pulse transformer volume is big, heaviness, processed complex.Every isolation drive mode, every road drives and all wants one group of accessory power supply, if the three-phase bridge converter then needs six groups, but also will suspend mutually, has increased the complexity of circuit.Along with the continuous maturation of Driving technique, existing multiple integrated thick-film driver is released.As EXB840/841, EXB850/851, M57959L/AL, M57962L/AL, HR065 or the like, what they all adopted is light-coupled isolation, has solved the pulsewidth problem, but still has the problem of suspended power supply.IR series drive circuit adopts HVIC and the anti-interference CMOS manufacturing process of breech lock, and suspended power supply adopts boostrap circuit, and its high-end operating voltage can reach 1200V, and the operating frequency height can reach 500kHz; Open, turn-off delay is little, is respectively 120ns and 94ns; Totem output peak current is 2A.But this type of drive circuit can not produce negative bias, the poor anti jamming capability of circuit.Single angle from driven MOS grid device for power switching is considered, does not all need the grid negative bias.Vge=0 can guarantee the device normal turn-off fully.But in bridge converter, negative bias is necessary.This is because have no progeny when high-end device closes, when low side devices impose is opened, when the dv/dt between the collector electrode-emitter of high-end device is too high, will be by the Miller capacitance between collector electrode-grid with the form of spike to the gate feed electric charge, grid voltage is raise, and the threshold voltage of mos gate utmost point power switch transistor is normally about 3～5V, in case the height of spike and width reach certain level, power device will mislead, and causes catastrophic consequence.
Summary of the invention
The utility model provides a kind of half-bridge mos gate gated transistors drive circuit, to solve the problem of existing mos gate utmost point power switch transistor driving means deficiency.The technical scheme that the utility model is taked is: the high-side driver accessory power supply is connected with high-end drive circuit, low side drives accessory power supply and is connected with low-side driver circuitry, high-end drive circuit is connected with high-end mos gate utmost point power switch, and low-side driver circuitry is connected with low side mos gate utmost point power switch.
The utility model has the advantages that novel structure, provide negative supply by the positive-negative power translation circuit for high-end drive circuit, whole drive circuit only needs 1 tunnel positive 10V～20V and 1 tunnel negative 10V～20V and one road power supply.Like this, on engineering, significantly reduce control transformer volume and power supply number, reduced product cost, improved system reliability.
Description of drawings
Fig. 1 is the utility model circuit block diagram.
Fig. 2 is the utility model circuit theory diagrams.
Embodiment
Referring to Fig. 1, high-side driver accessory power supply 1 is connected with high-end drive circuit 2, low side drives accessory power supply 5 and is connected with low-side driver circuitry 4, and high-end drive circuit 2 is connected with high-end mos gate utmost point power switch 3, and low-side driver circuitry 4 is connected with low side mos gate utmost point power switch 6.
Referring to Fig. 2, low-side driver circuitry by VC and VE provide respectively+15V and-the 4.7V power supply.When drive pulse signal was high level, drive integrated circult IC2 was connected the grid of mos gate utmost point device with positive supply, make the S2 conducting.When drive pulse signal was low level, IC2 was connected the grid of S2 with negative supply, make the S2 reliable turn-off.VBS (voltage difference between drive circuit VB and the VS pin) provides power supply for high-side driver integrated circuit (IC) 1.This power supply must be between 10 ~ 20V, to guarantee drive integrated circult driven MOS gridistor (MGT) fully.Drive integrated circult has the VBS under-voltage protection, when VBS voltage drops to certain value, will close high-side driver output, has guaranteed that MGT can not work under high power consumption.The VBS power supply is a suspended power supply, is attached on the VS voltage, and VS is a high frequency square wave normally.
The principle that bootstrap approach produces the VBS suspended power supply is: the logical relation of half-bridge driven pulse is, high-side driver pulse and low side driving pulse can not be high level simultaneously, otherwise mos gate gated transistors S1 and S2 while conducting make power supply VH short circuit.When the low side drive pulse signal is a high level, mos gate gated transistors S2 conducting, power supply VC gives the charging for bootstrap capacitor C2 through diode D2, mos gate gated transistors S2, at this moment capacitor C 2 does not have voltage, drive integrated circult is only powered by positive supply, when VBS voltage is lower than the actuation threshold threshold voltage, the pulse of IC1 sealing high-side driver.When VBS voltage was higher than the actuation threshold threshold voltage, IC1 opened the high-side driver pulse, when the high-side driver pulsed drive is high level, and mos gate polar crystal pipe fitting S1 conducting.The ground of high-end power supply is connected, diode D1, D2 reverse bias and turn-off with power supply VH.Because when starting first pulse, the VBS of IC1 is a positive voltage, the threshold circuit level value in the IC1 circuit can not change, and has guaranteed effective conducting of mos gate gated transistors S1.
R1, Q1, C2, C5, D3, D4, D5 constitute the positive-negative power translation circuit.When the low side drive pulse signal is a high level, mos gate utmost point device S2 conducting, power supply VC gives the charging for bootstrap capacitor C5 through diode D1, D4, switching tube S2, when the low side drive pulse signal is a low level, when the high-side driver pulse signal was high level, the current source that resistance R 1 triode Q1 constitutes discharged to C5 through diode D3, charges to C2, make to produce negative just down voltage on the C2, for high-side driver provides negative supply.
Claims (1)
1, a kind of half-bridge mos gate gated transistors drive circuit, it is characterized in that: the high-side driver accessory power supply is connected with high-end drive circuit, low side drives accessory power supply and is connected with low-side driver circuitry, high-end drive circuit is connected with high-end mos gate utmost point power switch, and low-side driver circuitry is connected with low side mos gate utmost point power switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200944136U CN201118535Y (en) | 2007-09-28 | 2007-09-28 | A half bridge MOS grid transistor driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200944136U CN201118535Y (en) | 2007-09-28 | 2007-09-28 | A half bridge MOS grid transistor driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201118535Y true CN201118535Y (en) | 2008-09-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200944136U Expired - Fee Related CN201118535Y (en) | 2007-09-28 | 2007-09-28 | A half bridge MOS grid transistor driving circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN201118535Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
| CN104170256A (en) * | 2012-01-17 | 2014-11-26 | 弗兰克·扎伊茨 | Method and apparatus for driving half bridge connected semiconductor power switches with stable and extremely short interlock delay combined with switching transition speed increase and driving power consumption reduction |
-
2007
- 2007-09-28 CN CNU2007200944136U patent/CN201118535Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104170256A (en) * | 2012-01-17 | 2014-11-26 | 弗兰克·扎伊茨 | Method and apparatus for driving half bridge connected semiconductor power switches with stable and extremely short interlock delay combined with switching transition speed increase and driving power consumption reduction |
| US9496857B2 (en) | 2012-01-17 | 2016-11-15 | Franc Zajc | Method and apparatus for driving half bridge connected semiconductor power switches with a stable and extremely short interlock delay combined with a switching transition speed increase and a driving power consumption reduction |
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
| CN103683864B (en) * | 2012-08-30 | 2016-06-22 | 英飞凌科技股份有限公司 | For driving the circuit arrangement of the transistor in bridge circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Zili Inventor after: Ren Zuchun Inventor after: Sun Jun Inventor after: Si Chongzhan Inventor after: Zhang Hailong Inventor after: Liang Yizi Inventor after: Wang Zhicheng Inventor after: Zhao Meng Inventor before: Wang Zili Inventor before: Sun Dajun Inventor before: Department of Chongzhan Inventor before: Liang Yizi Inventor before: Zhang Hailong Inventor before: Wang Zhicheng Inventor before: Zhao Meng |
|
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Zili Inventor after: Sun Dajun Inventor after: Ren Zuchun Inventor after: Department of Chongzhan Inventor after: Liang Yizi Inventor after: Zhang Hailong Inventor after: Wang Zhicheng Inventor after: Zhao Meng Inventor before: Wang Zili Inventor before: Ren Zuchun Inventor before: Sun Jun Inventor before: Si Chongzhan Inventor before: Zhang Hailong Inventor before: Liang Yizi Inventor before: Wang Zhicheng Inventor before: Zhao Meng |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: WANG ZILI; REN ZUCHUN; SUN DAJUN; SI CHONGZHAN; LIANG YIZI; ZHANG HAILONG;WANG ZHICHENG; ZHAO MENG TO: WANG ZILI; SUN DAJUN; REN ZUCHUN; SI CHONGZHAN; LIANG YIZI; ZHANG HAILONG; WANG ZHICHENG; ZHAO MENG Free format text: CORRECT: INVENTOR; FROM: WANG ZILI; SUN DAJUN; SI CHONGZHAN; LIANG YIZI; ZHANG HAILONG; WANG ZHICHENG; ZHAO MENG TO: WANG ZILI; REN ZUCHUN; SUN DAJUN; SI CHONGZHAN; LIANG YIZI; ZHANG HAILONG; WANG ZHICHENG; ZHAO MENG |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080917 Termination date: 20091028 |