CN201017891Y - 100mA and above plastic capsulation high voltage diode - Google Patents

100mA and above plastic capsulation high voltage diode Download PDF

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Publication number
CN201017891Y
CN201017891Y CN 200720010378 CN200720010378U CN201017891Y CN 201017891 Y CN201017891 Y CN 201017891Y CN 200720010378 CN200720010378 CN 200720010378 CN 200720010378 U CN200720010378 U CN 200720010378U CN 201017891 Y CN201017891 Y CN 201017891Y
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CN
China
Prior art keywords
diode
voltage diode
tube core
utility
model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200720010378
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Chinese (zh)
Inventor
王贵强
董春红
陈�峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AN'SHAN SUN LOCUS HV COMPONENTS CORP Ltd
Original Assignee
AN'SHAN SUN LOCUS HV COMPONENTS CORP Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AN'SHAN SUN LOCUS HV COMPONENTS CORP Ltd filed Critical AN'SHAN SUN LOCUS HV COMPONENTS CORP Ltd
Priority to CN 200720010378 priority Critical patent/CN201017891Y/en
Application granted granted Critical
Publication of CN201017891Y publication Critical patent/CN201017891Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model relates to a plastic packaging high voltage diode which is more than 100 mA, which consists of a diode core, a leading wire and a diode core external plastic-enclosed tube. The diode core of the high voltage diode is sintered with a plurality of silicon chips as a whole through aluminum foil pieces, an aluminum foil piece layer forms between adjacent two silicon chips, and the copper leading wire is welded at the both ends of the diode core with the lead-free soldering materials algam and argentums; the utility model is characterized in that the diode core area is 2.1 is multiplied by 2.12 mm<2>, and the leading wire diameter is 0.78 to 1.2 mm. The utility model has the advantages that the voltage is high, the current is high, the size is small, and the utility model helps electronic product miniaturization.

Description

The above Plastic Package high-voltage diode of 100mA
Technical field
The utility model relates to the above Plastic Package high-voltage diode of a kind of high-voltage diode, particularly 100mA.
Background technology
High-voltage diode is mainly used in industries such as television set, anion generator, Laser Power Devices, induction heater, high pressure generator, and originally the high-voltage diode of Shi Yonging all is that silicon chip is connect formation with lead welding.Traditional high-voltage diode is minimum wants 20 diodes to be cascaded, and uses the poured with epoxy resin moulding, and volume is bigger.
Summary of the invention
The purpose of this utility model provides a kind of voltage height, electric current is big, volume is little, help the above Plastic Package high-voltage diode of 100mA of miniaturization of electronic products.
The above Plastic Package high-voltage diode of 100mA, constitute by the outer plastic packaging pipe of tube core, lead-in wire and tube core, the tube core of this high-voltage diode by the multilayer silicon chip by the aluminium foil sintering together, make between the adjacent two-layer silicon chip to form the aluminium foil lamella, the tube core both ends utilize the lead-free solder SAC with the copper wire bonds at the tube core two ends; It is characterized in that: die area is 2.12 * 2.12mm 2, used diameter wire is Φ 0.78-1.2mm.
The utility model has the advantages that the voltage height, electric current is big, volume is little, help miniaturization of electronic products.
Description of drawings
Fig. 1 is the structural representation of the above Plastic Package high-voltage diode of 100mA.
Embodiment
See Fig. 1, the above Plastic Package high-voltage diode of 100mA, constitute by lead-in wire 1, chip 3, aluminium foil 4, epoxy packages body 2, the tube core of this high-voltage diode by multilayer chiop 3 by aluminium foil 4 sintering together, make and form the aluminium foil lamella between the adjacent layers of chips 3, the tube core both ends utilize lead-free solder to go between and 1 are welded on the tube core two ends, form electrode, and the tube core outside is an epoxy packages body 2.Die area is 2.12 * 2.12mm 2, used diameter wire is Φ 0.78-1.2mm.
This product processes step is: PN diffusion, oxidation, platinum diffusion, lamination sintering, metallization, die separation, burn into wire bonds, anticaustic, surface passivation, injection moulding, plating, test, packing.Wherein each operation is all tested according to specification requirement.
Technical performance that the utility model will reach and parameter: more than the forward current 100mA, reverse voltage 3KV-30KV, reverse recovery time 50NS-150NS.
This product is owing to require electric current big, and die area is big, and used diameter wire is big.Require to determine the die area of silicon chip number and cutting according to the difference of voltage, electric current.

Claims (1)

1.100mA above Plastic Package high-voltage diode, constitute by the outer plastic packaging pipe of tube core, lead-in wire and tube core, the tube core of this high-voltage diode by the multilayer silicon chip by the aluminium foil sintering together, make between the adjacent two-layer silicon chip to form the aluminium foil lamella, the tube core both ends utilize the lead-free solder SAC with the copper wire bonds at the tube core two ends; It is characterized in that: die area is 2.12 * 2.12mm 2, used diameter wire is Φ 0.78-1.2mm.
CN 200720010378 2007-01-30 2007-01-30 100mA and above plastic capsulation high voltage diode Expired - Fee Related CN201017891Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200720010378 CN201017891Y (en) 2007-01-30 2007-01-30 100mA and above plastic capsulation high voltage diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200720010378 CN201017891Y (en) 2007-01-30 2007-01-30 100mA and above plastic capsulation high voltage diode

Publications (1)

Publication Number Publication Date
CN201017891Y true CN201017891Y (en) 2008-02-06

Family

ID=39058390

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200720010378 Expired - Fee Related CN201017891Y (en) 2007-01-30 2007-01-30 100mA and above plastic capsulation high voltage diode

Country Status (1)

Country Link
CN (1) CN201017891Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237284A (en) * 2010-05-05 2011-11-09 如皋市易达电子有限责任公司 Novel method for manufacturing diode
CN104377129A (en) * 2014-09-29 2015-02-25 西安卫光科技有限公司 Method for manufacturing fast-recovery glass package diode with ultra-high voltage above 13,000 V

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237284A (en) * 2010-05-05 2011-11-09 如皋市易达电子有限责任公司 Novel method for manufacturing diode
CN102237284B (en) * 2010-05-05 2012-12-26 如皋市易达电子有限责任公司 Novel method for manufacturing diode
CN104377129A (en) * 2014-09-29 2015-02-25 西安卫光科技有限公司 Method for manufacturing fast-recovery glass package diode with ultra-high voltage above 13,000 V
CN104377129B (en) * 2014-09-29 2017-09-26 西安卫光科技有限公司 A kind of more than 1.3 ten thousand volts super-pressure, the fast preparation method for recovering glass-encapsulated diode

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080206