CN103367351A - LED module multilayer stacking structure based on silicon substrate and manufacturing method - Google Patents
LED module multilayer stacking structure based on silicon substrate and manufacturing method Download PDFInfo
- Publication number
- CN103367351A CN103367351A CN2013102965921A CN201310296592A CN103367351A CN 103367351 A CN103367351 A CN 103367351A CN 2013102965921 A CN2013102965921 A CN 2013102965921A CN 201310296592 A CN201310296592 A CN 201310296592A CN 103367351 A CN103367351 A CN 103367351A
- Authority
- CN
- China
- Prior art keywords
- groove
- wire
- layer
- infrabasal plate
- upper substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 10
- 239000010703 silicon Substances 0.000 title claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 239000002365 multiple layer Substances 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000003292 glue Substances 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 238000007373 indentation Methods 0.000 claims description 6
- 230000003044 adaptive effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 238000005459 micromachining Methods 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 description 9
- 238000003466 welding Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED module multilayer stacking structure based on a silicon substrate and a manufacturing method of the LED module multilayer stacking structure. The LED module multilayer stacking structure based on the silicon substrate comprises a light source module layer and a driving module layer. The light source module layer comprises an upper substrate and an LED chip, and the LED chip is arranged in a first groove in the upper substrate. The driving module layer comprises a lower substrate and a driving IC, the driving IC is arranged in a second groove in the lower substrate, and then the upper substrate and the lower substrate are stacked together. The manufacturing method of the LED module multilayer stacking structure based on the silicon substrate uses the micromachining technology, micro-size etching, micro-size wiring and packaging of the corresponding LED chip and the corresponding driving IC can be accurately controlled, the integrated design is more flexible, the module occupied area is reduced, the lamp assembly is simplified, electric connection power losses are reduced, power is promoted, the system size is smaller, the support cost and the packaging cost are saved, the mechanical connection thermal resistance is reduced, the radiating effect is improved, and use can be rapidly and conveniently achieved.
Description
Technical field
The present invention relates to the LED lighting field, relate in particular to a kind of based on silica-based LED module multiple-layer stacked structure and manufacture method.
Background technology
At present LED encapsulation refers to led chip is fixed on the support, is electrically connected with gold thread in led chip and support, seals with silica gel again.In the assembling light fixture, LED encapsulation is contained in the SMT modal sets becomes the optical mode group on the substrate.Optical mode group, drive circuit die set, shell, optical element etc. are combined.Each assembly independent design of this kind compound mode, the combination difficulty, because size disunity, connector position and connection mechanism do not have standard, the larger components and parts of each component application size, size reduction are very difficult, and prior art can not realize the optical mode group and drive the module stack connecting as one modularity.
Summary of the invention
The invention provides a kind of LED of minimizing package support, reduced the LED module multiple-layer stacked structure of driving and rectifying tube encapsulation.
To achieve these goals, the technical solution scheme that the present invention proposes is: a kind of based on silica-based LED module multiple-layer stacked structure, and comprise light source module layer and drive the module layer, light source module layer and drive that module is stacked to be added and welded by scolder; Described light source module layer comprises upper substrate and led chip, described upper substrate is provided with the first groove with the opposing side surface of driving module layer, described led chip is arranged in the first groove, be furnished with the first wire on the described upper substrate, led chip is provided with pin, and an end of the first wire is electrically connected with the pin of led chip; Described driving module layer comprises infrabasal plate and drive IC, described infrabasal plate is provided with the second groove with the relative side surface of described light source module layer, described drive IC is arranged in the second groove, be furnished with the second wire on the described infrabasal plate, drive IC is provided with pin, and an end of the second wire is electrically connected with the pin of drive IC; Scolder is conductive solder, and the other end of the first wire on the upper substrate and the other end of the second wire on the infrabasal plate electrically contact by conductive solder.
Wherein, a side surface of the relatively described light source module of described infrabasal plate layer is provided with at least one the 3rd groove, the scolder of accommodating described conduction in the 3rd groove.
Wherein, described the 3rd groove comprises a plurality of, and the above a plurality of the 3rd groove indentation is arranged in the cross section of infrabasal plate.
Wherein, described upper substrate through-thickness is provided with the through hole that passes described the first wire, and upper substrate is provided with described the 4th groove with the lower surface of through hole.
Wherein, in described the second groove filling glue is set, drive IC is positioned at fills glue.
Above-mentioned based on silica-based LED module multiple-layer stacked structure in order to obtain, the invention provides a kind of manufacture method based on silica-based LED module multiple-layer stacked structure, comprise,
Make the step of light source module layer, comprise, a1, choose silicon chip as upper substrate, adopt micro-processing technology at upper substrate surface etching the first groove; A2, adopt micro-processing technology on upper substrate according to different circuit arrangement the first wire; A3, employing micro-processing technology arrange led chip in the first groove, the pin of led chip is connected electrically in an end of the first wire;
Make to drive the step of module layer, comprise, b1, choose silicon chip as infrabasal plate, adopt micro-processing technology at infrabasal plate surface etch the second groove; B2, employing micro-processing technology according to different circuit arrangement the second wire, arrange drive IC in the second groove on infrabasal plate, the pin of drive IC is connected electrically in an end of the second wire;
Stack light source module layer and drive the step of module layer comprises, c1, comprises that on the surface of infrabasal plate etching the second groove the other end corresponding position that upper and lower substrate arranges conductor wire arranges conductive weld; C2, with relative adaptive being stacked with the surface of infrabasal plate etching the second groove of back surface of upper substrate etching first groove of the light source module layer made, the fusing conductive weld makes light source module layer and drives that the module layer welds together and the conductor wire of upper and lower substrate is electrically connected.
Wherein, among the described step b1, at least one the 3rd groove of etching on the upper surface of described infrabasal plate also, described conductive weld is placed in the 3rd groove.
Wherein, described the 3rd groove comprises a plurality of, on the cross section of infrabasal plate, and a plurality of the 3rd groove indentations.
Wherein, among the described step a1, described upper substrate through-thickness is drilled with the through hole that passes described the first wire, at relative infrabasal plate one side surface etching four groove of upper substrate with the through hole.
Wherein, among the described step b2, in described the second groove, after the installation drive IC, filling glue is set in the second groove described drive IC is wrapped up.
Beneficial effect of the present invention is: the LED encapsulation that is different from prior art refers to chip is fixed on the support, be electrically connected with gold thread in chip and support, seal with silica gel again, of the present invention based on silica-based LED module multiple-layer stacked structure, comprise light source module layer and drive the module layer, described light source module layer and the welding of driving module layer, light source module layer comprises upper substrate and led chip, led chip is arranged in the first groove of upper substrate, drive the module layer and comprise infrabasal plate and drive IC, drive IC is arranged in the second groove of infrabasal plate, then upper substrate and infrabasal plate are superimposed, and this integrated design has more flexibility, the module footprints greatly reduces, lamp assembled is simplified greatly, lower and be electrically connected power loss, system bulk is less, save support and packaging cost, lower and be electrically connected the loss bring to power, lower mechanical connection thermal resistance improving radiating effect.And based on the manufacture method of silica-based LED module multiple-layer stacked structure, adopt micro-processing technology can accurately control the encapsulation of micro-dimension etching, wiring and corresponding led chip and drive IC, the accuracy of making is generally at micron, so module with this technology production, can accurately control the micro-dimension etching, connect up with the encapsulation of corresponding led chip and drive IC, finished size can be less.
Description of drawings
Fig. 1 is the schematic cross-section based on silica-based LED module multiple-layer stacked structure of the present invention;
Fig. 2 is the schematic flow sheet of the manufacture method based on silica-based LED module multiple-layer stacked structure of the present invention.
Among the figure: 1, upper substrate; 11, led chip; 12, the first groove; 13, through hole; 14, the 4th groove; 2, infrabasal plate; 21, drive IC; 22, the second groove; 23, the 3rd groove; 3, scolder; 4, conducting metal.
Embodiment
By describing technology contents of the present invention, structural feature in detail, realized purpose and effect, below in conjunction with execution mode and cooperate that accompanying drawing is detailed to give explanation.
See also Fig. 1 and Fig. 2, present embodiment a kind of based on silica-based LED module multiple-layer stacked structure comprises light source module layer and drives the module layer, light source module layer and drive that module is stacked to be added and welded by scolder; Described light source module layer comprises upper substrate 1 and led chip 11, described upper substrate 1 is provided with the first groove 12 with the opposing side surface of driving module layer, described led chip 11 is arranged in the first groove 12, be furnished with the first wire on the described upper substrate 1, led chip 11 is provided with pin, and an end of the first wire is electrically connected with the pin of led chip 11; Described driving module layer comprises infrabasal plate 2 and drive IC 21, described infrabasal plate 2 is provided with the second groove 22 with the relative side surface of described light source module layer, described drive IC 21 is arranged in the second groove 22, be furnished with the second wire on the described infrabasal plate 2, drive IC 21 is provided with pin, and an end of the second wire is electrically connected with the pin of drive IC; Scolder 3 electrically contacts by the scolder 3 of conduction for the scolder of conduction, the other end of the first wire on the upper substrate 1 and the other end of the second wire on the infrabasal plate 2.The present invention directly is connected led chip with substrate, improved greatly radiating efficiency, drive IC is integrated on the infrabasal plate, and directly external power supply need not external driving, easy to use, and light source module layer and the stacked mode that adds of driving module reduce footprints, conserve space greatly, simultaneously the present invention has reduced the LED package support and has reduced the encapsulation of driving and rectifying tube, saves greatly cost.
In the present embodiment, one side surface of the relatively described light source module of described infrabasal plate 2 layer is provided with at least one the 3rd groove 23, the scolder 3 of the 3rd groove 23 interior accommodating described conductions, like this light source module layer superposes welding mutually with driving module layer when, make things convenient for the setting of scolder and increase the firm of welding, further, described the 3rd groove 23 comprises a plurality of, the above a plurality of the 3rd groove 23 indentation is arranged in the cross section of infrabasal plate 2, it is firm that so further increase is welded, in the present embodiment, the position of described scolder 3 operated by rotary motion is relevant according to concrete wiring, and according to concrete wiring, scolder is electrically connected the wire between light source module layer and the driving module layer, can make things convenient for like this electrical connection between light source module layer and the driving module layer, also can improve the speed of production simultaneously.
In the present embodiment, described upper substrate 1 through-thickness is provided with the through hole 13 that passes described the first wire, upper substrate 1 is provided with described the 4th groove 14 with the lower surface at through hole 13 places, the 4th groove 14, through hole 13 can make things convenient for the first wire on the upper substrate 1 to pass through hole 13 to be electrically connected with the second wire on the infrabasal plate 2, and the 4th groove 14 can be firm with the first conductor wire, can increase the firm of upper and lower substrate welding simultaneously.And in the present embodiment, described the first wire and the second wire, be generally conducting metal 4, be set directly on the upper and lower substrate according to different circuit, then the conducting metal on the upper substrate 4, is electrically connected with conducting metal 4 on the infrabasal plate 2 by the scolder 3 that conducts electricity around the side to close the infrabasal plate 2 of upper substrate 1 by through hole 13.
In the present embodiment, described the second groove 22 interior filling glue that arrange, drive IC 21 is positioned at fills glue, can protect drive IC 21 like this.
Above-mentioned based on silica-based LED module multiple-layer stacked structure in order to obtain, the invention discloses a kind of manufacture method based on silica-based LED module multiple-layer stacked structure, comprise,
Make the step of light source module layer, comprise, a1, choose silicon chip as upper substrate 1, adopt micro-processing technology at upper substrate 1 surface etch the first groove 12, simultaneously be drilled with the through hole 13 that passes described the first wire at upper substrate 1 through-thickness, at relative infrabasal plate one side surface etching four groove of upper substrate with the through hole; A2, adopt micro-processing technology on upper substrate 1 according to different circuit arrangement the first wire; A3, employing micro-processing technology are at the first groove 12 interior led chips 11 that arrange, and the pin of led chip 11 is connected electrically in an end of the first wire, and the other end passes described through hole 13;
Make to drive the step of module layer, comprise, b1, choose silicon chip as infrabasal plate 2, adopt micro-processing technology at infrabasal plate 2 surface etch the second groove 22, simultaneously at least one the 3rd groove 23 of etching; B2, adopt micro-processing technology on infrabasal plate 2 according to different circuit arrangement the second wire, in the second groove 22, drive IC 21 is set, the pin of drive IC 21 is connected electrically in an end of the second wire, then fills glue to the 22 interior injections of the second groove described drive IC is wrapped up;
Stack light source module layer and drive the step of module layer comprises, c1, comprises that on the surface of infrabasal plate 2 etchings the second groove 22 other end corresponding position that upper and lower substrate arranges first, second conductor wire arranges conductive weld (a kind of form of scolder 3); In this enforcement power, be provided with conductive weld in the 3rd groove 23 and the 4th groove 14; C2, with the back surface of upper substrate 1 etching first groove 12 of the light source module layer made and relative adaptive being stacked in surface of infrabasal plate 2 etchings the second groove 22, the fusing conductive weld makes light source module layer and drives that the module layer welds together and the conductor wire of upper and lower substrate is electrically connected, and uses solder surface tension force autoregistration alignment stack alignment method in welding process.
In the present embodiment, described the 3rd groove 23 comprises a plurality of, on the cross section of infrabasal plate 2, and a plurality of the 3rd groove indentations, it is firm that so further increase is welded.
In the present embodiment, on, upper etching first groove 12 of infrabasal plate, the second groove 22, the 3rd groove 23 and the 4th groove 14 be etching under micro-processing technology all, described the first wire and the second wire are upper, wiring on the infrabasal plate, also under micro-processing technology, finish, same, the encapsulation of led chip and drive IC etc. is also finished under micro-processing technology, and micro-processing technology (Micromachining) is to build basic what MEMS (micro electro mechanical system) (Micro Electro-Mechanical System, MEMS) manufacturing technology is similar to and produces semi-conductive technology such as the little processing in surface, the techniques such as the little processing of build.The accuracy of making is generally at micron, so the module of producing with this technology can accurately be controlled micro-dimension etching and wiring with little sheet encapsulation of correspondence, finished size can be less.
The present invention is upper, in the time of the infrabasal plate stack, adopt solder surface tension force autoregistration alignment stack alignment method, simple and the accurate automatic aligning of the method technique, and solder surface tension force autoregistration alignment stack alignment method is, to carry out autoregistration be method commonly used in package design to solder surface tension force when utilizing reflow soldering (reflow), in the situation of heating, usually 200-300 degree centigrade, scolder is melted into liquid, the surface tension of scolder so that the scolder liquid inclination in to the minimum model deformation in surface, utilize this surface tension, can make on the scolder, the corresponding pad of lower both sides aligns, therefore, some errors before the welding can be calibrated, and have simplified the work that aligns before the welding.
Manufacture method based on silica-based LED module multiple-layer stacked structure of the present invention, structure with stack substrate mode integrated LED chip and drive IC, so that have more flexibility based on silica-based LED module multiple-layer stacked structure, can be in the first groove or the second groove establishing electric that installation needs be set; Footprints greatly reduces after the stack, and lamp assembled is simplified greatly, speed production and economizing in raw materials; Because the connection point tails off, just the scolder by conduction connects, and lowers the loss, the bring to power that are electrically connected power, saves electric energy; The present invention also saves support and packaging cost, attenuating mechanical connection thermal resistance improving radiating effect.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (10)
1. one kind based on silica-based LED module multiple-layer stacked structure, it is characterized in that, comprises light source module layer and drives the module layer, light source module layer and drive that module is stacked to be added and welded by scolder;
Described light source module layer comprises upper substrate and led chip, described upper substrate is provided with the first groove with the opposing side surface of driving module layer, described led chip is arranged in the first groove, be furnished with the first wire on the described upper substrate, led chip is provided with pin, and an end of the first wire is electrically connected with the pin of led chip;
Described driving module layer comprises infrabasal plate and drive IC, described infrabasal plate is provided with the second groove with the relative side surface of described light source module layer, described drive IC is arranged in the second groove, be furnished with the second wire on the described infrabasal plate, drive IC is provided with pin, and an end of the second wire is electrically connected with the pin of drive IC;
Scolder is conductive solder, and the other end of the first wire on the upper substrate and the other end of the second wire on the infrabasal plate electrically contact by conductive solder.
2. according to claim 1ly it is characterized in that based on silica-based LED module multiple-layer stacked structure a side surface of the relatively described light source module of described infrabasal plate layer is provided with at least one the 3rd groove, the scolder of accommodating described conduction in the 3rd groove.
3. according to claim 2ly it is characterized in that based on silica-based LED module multiple-layer stacked structure described the 3rd groove comprises a plurality of, the above a plurality of the 3rd groove indentation is arranged in the cross section of infrabasal plate.
4. according to claim 2ly it is characterized in that based on silica-based LED module multiple-layer stacked structure described upper substrate through-thickness is provided with the through hole that passes described the first wire, upper substrate is provided with described the 4th groove with the lower surface of through hole.
5. according to claim 1ly it is characterized in that based on silica-based LED module multiple-layer stacked structure, in described the second groove filling glue is set, drive IC is positioned at fills glue.
6. the manufacture method based on silica-based LED module multiple-layer stacked structure is characterized in that, comprise,
Make the step of light source module layer, comprise, a1, choose silicon chip as upper substrate, adopt micro-processing technology at upper substrate surface etching the first groove; A2, adopt micro-processing technology on upper substrate according to different circuit arrangement the first wire; A3, employing micro-processing technology arrange led chip in the first groove, the pin of led chip is connected electrically in an end of the first wire;
Make to drive the step of module layer, comprise, b1, choose silicon chip as infrabasal plate, adopt micro-processing technology at infrabasal plate surface etch the second groove; B2, employing micro-processing technology according to different circuit arrangement the second wire, arrange drive IC in the second groove on infrabasal plate, the pin of drive IC is connected electrically in an end of the second wire;
Stack light source module layer and drive the step of module layer comprises, c1, comprises that on the surface of infrabasal plate etching the second groove the other end corresponding position that upper and lower substrate arranges conductor wire arranges conductive weld; C2, with relative adaptive being stacked with the surface of infrabasal plate etching the second groove of back surface of upper substrate etching first groove of the light source module layer made, the fusing conductive weld makes light source module layer and drives that the module layer welds together and the conductor wire of upper and lower substrate is electrically connected.
7. according to claim 6 the manufacture method based on silica-based LED module multiple-layer stacked structure is characterized in that, among the described step b1, and at least one the 3rd groove of etching on the upper surface of described infrabasal plate also, described conductive weld is placed in the 3rd groove.
8. according to claim 7 the manufacture method based on silica-based LED module multiple-layer stacked structure is characterized in that described the 3rd groove comprises a plurality of, on the cross section of infrabasal plate, and a plurality of the 3rd groove indentations.
9. according to claim 7 the manufacture method based on silica-based LED module multiple-layer stacked structure, it is characterized in that, among the described step a1, described upper substrate through-thickness is drilled with the through hole that passes described the first wire, at relative infrabasal plate one side surface etching four groove of upper substrate with the through hole.
10. according to claim 6 the manufacture method based on silica-based LED module multiple-layer stacked structure is characterized in that, among the described step b2, in described the second groove, drive IC is installed after, in the second groove, arrange and fill glue described drive IC is wrapped up.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310296592.1A CN103367351B (en) | 2013-07-15 | 2013-07-15 | Based on silica-based LED module multiple-layer stacked structure and manufacture method |
| RU2015153042/28U RU165459U1 (en) | 2013-07-15 | 2013-07-17 | MULTI-LAYER DESIGN OF THE LED MODULE ON A SILICON SUBSTRATE |
| PCT/CN2013/079509 WO2015006936A1 (en) | 2013-07-15 | 2013-07-17 | Multilayer stacking structure of silicon-based led module, and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310296592.1A CN103367351B (en) | 2013-07-15 | 2013-07-15 | Based on silica-based LED module multiple-layer stacked structure and manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103367351A true CN103367351A (en) | 2013-10-23 |
| CN103367351B CN103367351B (en) | 2015-12-30 |
Family
ID=49368369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310296592.1A Active CN103367351B (en) | 2013-07-15 | 2013-07-15 | Based on silica-based LED module multiple-layer stacked structure and manufacture method |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN103367351B (en) |
| RU (1) | RU165459U1 (en) |
| WO (1) | WO2015006936A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646620A (en) * | 2013-12-25 | 2014-03-19 | 深圳市洲明科技股份有限公司 | LED (light-emitting diode) display module and manufacturing method thereof |
| WO2020014923A1 (en) * | 2017-07-19 | 2020-01-23 | 广州超维光电科技有限责任公司 | Integrally packaged strip unit based on stage-like structure |
| CN115547206A (en) * | 2022-09-29 | 2022-12-30 | 上海天马微电子有限公司 | Light-emitting module and manufacturing method thereof, backlight source, display panel and display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113359248B (en) * | 2021-06-02 | 2022-11-15 | 青岛海信宽带多媒体技术有限公司 | Optical module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100646094B1 (en) * | 2005-07-04 | 2006-11-14 | 엘지전자 주식회사 | Surface mounting type light emitting device package and fabricating method thereof |
| CN202100964U (en) * | 2011-03-11 | 2012-01-04 | 义乌市菲莱特电子有限公司 | LED (light emitting diode) energy-saving lamp tube with wide spectrum |
| US20120018886A1 (en) * | 2004-06-10 | 2012-01-26 | Il Kwon Shim | Integrated circuit package with open substrate and method of manufacturing thereof |
| CN203386751U (en) * | 2013-07-15 | 2014-01-08 | 广东洲明节能科技有限公司 | Silicon-based multiple module-group layer superposing LED (Light-Emitting Diode) structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1977394A (en) * | 2004-06-29 | 2007-06-06 | 皇家飞利浦电子股份有限公司 | Light emitting diode module |
| KR100817075B1 (en) * | 2006-11-09 | 2008-03-26 | 삼성전자주식회사 | Multistack package and method of fabricating the same |
| CN102011952A (en) * | 2009-09-04 | 2011-04-13 | 佛山市国星光电股份有限公司 | Method for making LED (Light Emitting Diode) light resource module and product made by the method |
-
2013
- 2013-07-15 CN CN201310296592.1A patent/CN103367351B/en active Active
- 2013-07-17 WO PCT/CN2013/079509 patent/WO2015006936A1/en active Application Filing
- 2013-07-17 RU RU2015153042/28U patent/RU165459U1/en active IP Right Revival
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120018886A1 (en) * | 2004-06-10 | 2012-01-26 | Il Kwon Shim | Integrated circuit package with open substrate and method of manufacturing thereof |
| KR100646094B1 (en) * | 2005-07-04 | 2006-11-14 | 엘지전자 주식회사 | Surface mounting type light emitting device package and fabricating method thereof |
| CN202100964U (en) * | 2011-03-11 | 2012-01-04 | 义乌市菲莱特电子有限公司 | LED (light emitting diode) energy-saving lamp tube with wide spectrum |
| CN203386751U (en) * | 2013-07-15 | 2014-01-08 | 广东洲明节能科技有限公司 | Silicon-based multiple module-group layer superposing LED (Light-Emitting Diode) structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646620A (en) * | 2013-12-25 | 2014-03-19 | 深圳市洲明科技股份有限公司 | LED (light-emitting diode) display module and manufacturing method thereof |
| CN103646620B (en) * | 2013-12-25 | 2016-01-20 | 深圳市洲明科技股份有限公司 | LED shows module and manufacture method thereof |
| WO2020014923A1 (en) * | 2017-07-19 | 2020-01-23 | 广州超维光电科技有限责任公司 | Integrally packaged strip unit based on stage-like structure |
| CN115547206A (en) * | 2022-09-29 | 2022-12-30 | 上海天马微电子有限公司 | Light-emitting module and manufacturing method thereof, backlight source, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| RU165459U1 (en) | 2016-10-20 |
| CN103367351B (en) | 2015-12-30 |
| WO2015006936A1 (en) | 2015-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104170086B (en) | The manufacture method of semiconductor device and semiconductor device | |
| CN101271760B (en) | Electronic element and its producing method | |
| CN203386751U (en) | Silicon-based multiple module-group layer superposing LED (Light-Emitting Diode) structure | |
| CN101587847B (en) | Perpendicular interconnection multi-chip assembly encapsulation method by PCB substrate | |
| CN103370788A (en) | Semiconductor device and method for manufacturing same | |
| CN103367351B (en) | Based on silica-based LED module multiple-layer stacked structure and manufacture method | |
| CN103363366A (en) | LED soft light bar and manufacturing method thereof | |
| US20140117525A1 (en) | Power module package and method of manufacturing the same | |
| CN105321973A (en) | Flip-chip camera and preparation method thereof | |
| CN103682018A (en) | Light-emitting diode and manufacturing method thereof | |
| CN103337496B (en) | Based on LED integrated encapsulation structure and the making method of two-sided silicon substrate | |
| CN105493300A (en) | Chip-on-board type light emitting device package and method for manufacturing same | |
| CN103390717B (en) | Lamination LED illuminating module and manufacture method | |
| CN103682066A (en) | Light-emitting diode module and manufacturing method thereof | |
| CN1443370A (en) | Semiconductor device | |
| CN103779313A (en) | Power semiconductor module of electrode pressure device | |
| CN211295099U (en) | Vertical integrated packaging assembly | |
| CN203384752U (en) | LED soft lamp strip | |
| CN202042476U (en) | Device packaging structure | |
| CN112713164A (en) | Three-dimensional integrated circuit and manufacturing method thereof | |
| CN201732781U (en) | Lead frame | |
| CN202259441U (en) | Novel LED chip | |
| CN203552830U (en) | Installation structure of surface mounting type passive electronic component | |
| CN2886312Y (en) | Plug-in type metal base multi-chip LED light source module | |
| CN102360809B (en) | Electronic component and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |