WO2015006936A1 - Multilayer stacking structure of silicon-based led module, and manufacturing method - Google Patents

Multilayer stacking structure of silicon-based led module, and manufacturing method Download PDF

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Publication number
WO2015006936A1
WO2015006936A1 PCT/CN2013/079509 CN2013079509W WO2015006936A1 WO 2015006936 A1 WO2015006936 A1 WO 2015006936A1 CN 2013079509 W CN2013079509 W CN 2013079509W WO 2015006936 A1 WO2015006936 A1 WO 2015006936A1
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Prior art keywords
groove
layer
silicon
substrate
lower substrate
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PCT/CN2013/079509
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French (fr)
Chinese (zh)
Inventor
林洺锋
韦嘉
徐振雷
梁润园
张春旺
胡丹
包厚华
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广东洲明节能科技有限公司
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Priority to RU2015153042/28U priority Critical patent/RU165459U1/en
Publication of WO2015006936A1 publication Critical patent/WO2015006936A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the invention relates to the field of LED illumination, in particular to a multi-layer superposition structure and a manufacturing method of a silicon-based LED module. Background technique
  • the LED package refers to fixing the LED chip on the bracket, and the LED chip and the bracket are electrically connected by a gold wire, and then sealed by a silica gel.
  • the LED package is assembled on the substrate in an SMT mode to become an optical module.
  • the components of the combination are independently designed and difficult to combine. Due to the non-uniform size, the position of the connection port and the connection mechanism are not standardized. It is very difficult to apply different components and reduce the size of each component, and the prior art cannot realize the optical module. And the drive module superimposed connection is integrated into a modular. Summary of the invention
  • the invention provides a multi-layer superposition structure of an LED module which reduces the LED package bracket and reduces the driving and rectifier package.
  • the solution proposed by the present invention is: a silicon-based LED module multi-layer superposition structure, comprising a light source module layer and a driving module layer, the light source module layer and the driving module layer are superimposed and
  • the light source module layer includes an upper substrate and an LED chip, and a surface of the upper substrate opposite to the driving module layer is provided with a first groove, and the LED chip is disposed in the first groove.
  • a first wire is disposed on the upper substrate, the LED chip is provided with a pin, and one end of the first wire is electrically connected to a pin of the LED chip;
  • the driving module layer includes a lower substrate and a driving IC, and the lower substrate and the bottom substrate
  • the light source module layer is provided with a second groove on a side surface thereof, the driving IC is disposed in the second groove, the second wire is disposed on the lower substrate, and the driving IC is provided with a pin and a second wire
  • One end is electrically connected to the pin of the driver IC;
  • the solder is conductive solder, and the other end of the first wire on the upper substrate and the other end of the second wire on the lower substrate are electrically contacted by the conductive solder.
  • the lower substrate is provided with at least one third groove on a side surface of the light source module layer.
  • the third recess contains the conductive solder.
  • the third groove comprises a plurality of, and the plurality of third grooves are arranged in a zigzag manner on a section of the lower substrate.
  • the upper substrate is provided with a through hole passing through the first wire in a thickness direction, and the fourth surface is provided on a lower surface of the upper substrate with a through hole.
  • the present invention provides a silicon-based LED module multi-layer superposition structure manufacturing method, including
  • the steps of fabricating the light source module layer include: al, selecting a silicon substrate as the upper substrate, and etching the first recess on the surface of the upper substrate by using micromachining technology; a2, using different microcircuit processing techniques on the upper substrate according to different circuits a first wire; a3, using an micromachining technique to provide an LED chip in the first recess, the pin of the LED chip being electrically connected to one end of the first wire;
  • the step of fabricating the driver module layer includes: bl, selecting a silicon substrate as a lower substrate, and etching a second recess on the surface of the lower substrate by using a micro-machining technique; b2, using a micro-machining technique on the lower substrate according to different circuit arrangements a wire, a driving IC is disposed in the second groove, and a pin of the driving IC is electrically connected to one end of the second wire;
  • the step of superimposing the light source module layer and the driving module layer includes: cl, providing a conductive solder ball at a position corresponding to the other end of the upper substrate and the second substrate on which the upper and lower substrates are disposed on the surface of the second recess; c2;
  • the upper substrate of the fabricated light source module layer etches the back surface of the first recess and the surface of the lower substrate etches the second recess, and fuses the conductive solder ball to make the light source module layer and the driving module
  • the layers are soldered together and the conductive lines of the upper and lower substrates are electrically connected.
  • step bl at least one third recess is also etched on the upper surface of the lower substrate, and the conductive solder ball is accommodated in the third recess.
  • the third groove comprises a plurality of sections on the lower substrate, and the plurality of third grooves are in a zigzag shape.
  • the upper substrate is drilled with a through hole passing through the first wire in a thickness direction, and a fourth groove is etched on a surface opposite to the lower substrate at a through hole of the upper substrate.
  • the LED package different from the prior art refers to fixing the chip on the bracket, electrically connecting the chip and the bracket with a gold wire, and sealing with the silica gel, the silicon-based LED module of the invention
  • the multi-layer superimposing structure comprises a light source module layer and a driving module layer, wherein the light source module layer and the driving module layer are soldered, the light source module layer comprises an upper substrate and an LED chip, and the LED chip is disposed on the first concave surface of the upper substrate
  • the driving module layer includes a lower substrate and a driving IC.
  • the driving IC is disposed in the second recess of the lower substrate, and then the upper substrate and the lower substrate are stacked together.
  • the integrated design is more flexible and the module is occupied.
  • the bit area is greatly reduced, the lamp assembly is greatly reduced, the electrical connection power loss is reduced, the system volume is smaller, the bracket and package cost are saved, the electrical connection loss is reduced, the power is reduced, and the mechanical connection thermal resistance is reduced to improve the heat dissipation effect.
  • the manufacturing method of the multi-layer superposition structure of the silicon-based LED module adopts the micro-machining technology to accurately control the micro-scale etching, wiring and the corresponding LED chip and the driver IC package, and the precision of the fabrication is generally in the micrometer, so The module produced by the technology can accurately control the micro-scale etching and wiring to correspond to the package of the LED chip and the driver IC, and the finished product size can be smaller.
  • FIG. 1 is a schematic cross-sectional view showing a multi-layer superimposed structure of a silicon-based LED module according to the present invention
  • FIG. 2 is a flow chart showing a method for fabricating a multi-layer superimposed structure of a silicon-based LED module according to the present invention.
  • a silicon-based LED module multi-layer stacking structure of the embodiment includes a light source module layer and a driving module layer, and the light source module layer and the driving module layer are superposed and soldered.
  • the light source module layer includes an upper substrate 1 and an LED chip 11, the upper substrate 1 and the driving module layer
  • a first groove 12 is disposed on the opposite side surface, the LED chip 11 is disposed in the first groove 12, a first wire is disposed on the upper substrate 1, and the LED chip 11 is provided with a lead, a first wire
  • the driving module layer includes a lower substrate 2 and a driving IC 21, and a surface of the lower substrate 2 and the surface of the light source module layer are provided with a second groove 22,
  • the driving IC 21 is disposed in the second recess 22, the second substrate 2 is disposed with a second wire, the driving IC 21 is provided with a pin, and one end of the second wire is electrically connected to a pin
  • the invention directly connects the LED chip to the substrate, greatly improves the heat dissipation efficiency, the driving IC is integrated on the lower substrate, can directly connect the external power source, does not need an external driving, is convenient to use, and the light source module layer and the driving module layer are superimposed, The space area is greatly reduced, and the space is saved. At the same time, the invention reduces the LED package bracket and reduces the packaging of the driving and rectifier tubes, thereby greatly saving cost.
  • the lower substrate 2 is provided with at least one third recess 23 on a side surface of the light source module layer, and the third recess 23 is provided with the conductive solder 3, so that the light source module When the layer and the driving module layer are superimposed and soldered to each other, the setting of the solder is facilitated and the soldering is stabilized.
  • the third recess 23 includes a plurality of the third recesses on the cross section of the lower substrate 2. 23 is arranged in a zigzag manner, which further increases the stability of the soldering.
  • the position of the solder 3 is generally set according to a specific wiring. According to the specific wiring, the solder will be the light source module layer and the driving. The wires between the module layers are electrically connected, which facilitates the electrical connection between the light source module layer and the driver module layer, and also increases the production rate.
  • the upper substrate 1 is provided with a through hole 13 passing through the first wire in a thickness direction
  • the fourth surface 14 is provided on a lower surface of the upper substrate 1 with a through hole 13
  • the four recesses 14 , the through holes 13 can facilitate the first wires on the upper substrate 1 to be electrically connected to the second wires on the lower substrate 2 through the through holes 13
  • the fourth grooves 14 can stabilize the first conductive wires while It is possible to increase the stability of the soldering of the upper and lower substrates.
  • the first wire and the second wire are generally conductive metal 4, which are directly disposed on the upper and lower substrates according to different circuits, and then the conductive metal 4 on the upper substrate is wound through the through hole 13.
  • the conductive metal 3 is electrically connected to the conductive metal 4 on the lower substrate 2.
  • the second recess 22 is provided with a filling glue, and the driving IC 21 is located in the filling glue. This protects the driver IC 21.
  • the present invention discloses a silicon-based LED module multi-layer superposition structure manufacturing method, including
  • the steps of fabricating the light source module layer include: al, selecting a silicon substrate as the upper substrate 1, and etching the first recess 12 on the surface of the upper substrate 1 by using micromachining technology, while drilling through the upper substrate 1 in the thickness direction
  • the through hole 13 of the first wire etches the fourth groove on the opposite substrate side surface of the upper substrate with the through hole; a2, the first circuit is arranged on the upper substrate 1 according to different circuit arrangements by using micromachining technology a wire; a3, using a micromachining technology in the first groove 12 is provided with an LED chip 11, the pin of the LED chip 11 is electrically connected to one end of the first wire, the other end through the through hole 13;
  • the step of fabricating the driver module layer includes: bl, selecting a silicon substrate as the lower substrate 2, etching the second recess 22 on the surface of the lower substrate 2 by using micromachining technology, and etching at least one third recess 23; b2;
  • the second wire is arranged on the lower substrate 2 according to different circuits by using a micro-machining technique, and the driving IC 21 is disposed in the second groove 22, and the pin of the driving IC 21 is electrically connected to one end of the second wire, and then to the second groove 22 Injecting a filler to wrap the driver IC;
  • the step of superposing the light source module layer and the driving module layer includes: cl, setting the corresponding position of the other end of the upper and lower substrates including the first and second conductive lines on the surface of the lower substrate 2 to etch the second recess 22
  • Conductive solder ball (a form of solder 3); in this embodiment, the third groove 23 and the fourth groove 14 are provided with conductive solder balls; c2, the upper substrate 1 of the fabricated light source module layer is etched The back side surface of the first recess 12 and the surface of the lower substrate 2 etch the second recess 22 are oppositely fitted, and the conductive solder ball is melted to weld the light source module layer and the driving module layer together and to be up and down.
  • the conductive lines of the substrate are electrically connected, and the solder surface tension is used to self-align the alignment superposition alignment method during the soldering process.
  • the third recess 23 includes a plurality of sections on the lower substrate 2, and the plurality of third recesses are serrated, which further increases the stability of the soldering.
  • the upper etched first groove 12, the second groove 22, the third groove 23, and the fourth groove 14 of the upper and lower substrates are all etched under micromachining technology
  • the wiring of the first wire and the second wire on the upper and lower substrates is also completed under the micro-machining technology.
  • the packaging of the LED chip and the driver IC is also performed under the micro-machining technology
  • the micro-machining technology (Micromachining) is based on The manufacturing technology of Micro Electro-Mechanical System (MEMS) is similar to the technology of producing semiconductors such as surface micromachining and bulk micromachining.
  • MEMS Micro Electro-Mechanical System
  • the precision of the fabrication is generally in the micrometer, so the module produced by this technology can accurately control the micro-scale etching and wiring to correspond to the small chip package, and the finished product size can be smaller.
  • the invention adopts a solder surface tension self-alignment alignment superposition alignment method when the upper and lower substrates are superimposed, and the method is simple and precise automatic alignment, and the solder surface tension self-alignment alignment superposition alignment method is utilized
  • Self-alignment of solder surface tension during reflow is a commonly used method in package design. In the case of heating, usually 200-300 degrees Celsius, the solder melts into a liquid, and the surface tension of the solder makes the solder liquid tend to The smallest surface deformation of the surface. With this surface tension, the corresponding pads on the upper and lower sides of the solder can be aligned. Therefore, some errors before soldering can be calibrated, and the alignment work before soldering is completed.
  • the manufacturing method of the multi-layer superposition structure of the silicon-based LED module of the invention integrates the structure of the LED chip and the driving IC by superimposing the substrate, so that the multi-layer superposition structure of the silicon-based LED module is more flexible, and
  • the first groove or the second groove is provided with the electrical setting required for installation; the occupied area is greatly reduced after the stacking, the assembly of the lamp is greatly enlarged, the production and the raw materials are accelerated, and the connection point is reduced, only through the conductive
  • the solder connection reduces the loss of the electrical connection power, increases the power, and saves the electric energy.
  • the invention also saves the cost of the bracket and the package, reduces the thermal resistance of the mechanical connection, and improves the heat dissipation effect.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

A multilayer stacking structure of a silicon-based LED module, comprising a light source module layer and a drive module layer, wherein the light source module layer comprises an upper substrate (1) and an LED chip (11), the LED chip (11) being arranged in a first groove (12) of the upper substrate (1); and the drive module layer comprises a lower substrate (2) and a drive IC (21), the drive IC (21) being arranged in a second groove (22) of the lower substrate (2), the upper substrate (1) and the lower substrate (2) being superposed together. A manufacturing method for a multilayer stacking structure of a silicon-based LED module. Micro size etching, wiring and encapsulation corresponding to the LED chip (11) and the drive IC (21) can be accurately controlled using the micromachining technology. This integrated design simplifies lamp assembling, reduces electric connection power loss so that the power is improved, reduces system volume, reduces costs, and improves heat dissipation effects.

Description

基于硅基的 LED模组多层叠加结构及制作方法 技术领域  Silicon-based LED module multi-layer superposition structure and manufacturing method thereof
本发明涉及 LED照明领域，尤其涉及一种基于硅基的 LED模组多层叠加结 构及制作方法。 背景技术  The invention relates to the field of LED illumination, in particular to a multi-layer superposition structure and a manufacturing method of a silicon-based LED module. Background technique
目前 LED封装指将 LED芯片固于支架上， 于 LED芯片及支架以金线作电 连接， 再以硅胶作密封。 在装配灯具的时候， 将 LED封装以 SMT模式组装在 基板上成为光模组。 将光模组、 驱动电路模组、 外壳、 光学元件等组合在一起。 此种组合方式各组件独立设计， 组合困难， 由于尺寸不统一， 连接口位置和连 接机制没有规范， 各组件应用尺寸较大元器件、 缩减尺寸十分困难， 而且现有 技术不能实现将光模组及驱动模组叠加连接为一体模组化。 发明内容  At present, the LED package refers to fixing the LED chip on the bracket, and the LED chip and the bracket are electrically connected by a gold wire, and then sealed by a silica gel. When assembling the luminaire, the LED package is assembled on the substrate in an SMT mode to become an optical module. Combine optical modules, drive circuit modules, housings, optical components, and more. The components of the combination are independently designed and difficult to combine. Due to the non-uniform size, the position of the connection port and the connection mechanism are not standardized. It is very difficult to apply different components and reduce the size of each component, and the prior art cannot realize the optical module. And the drive module superimposed connection is integrated into a modular. Summary of the invention
本发明提供一种减少 LED封装支架、减少了驱动与整流管封装的 LED模组 多层叠加结构。  The invention provides a multi-layer superposition structure of an LED module which reduces the LED package bracket and reduces the driving and rectifier package.
为了实现上述目的， 本发明提出的解决技术方案为： 一种基于硅基的 LED 模组多层叠加结构， 包括光源模组层和驱动模组层， 光源模组层和驱动模组层 叠加且由焊料焊接； 所述光源模组层包括上基板和 LED芯片， 所述上基板与驱 动模组层相背一侧表面设有第一凹槽， 所述 LED芯片设置于第一凹槽内， 所述 上基板上布置有第一导线， LED芯片设置有引脚， 第一导线的一端与 LED芯片 的引脚电连接； 所述驱动模组层包括下基板和驱动 IC, 所述下基板与所述光源 模组层相对一侧表面设有第二凹槽， 所述驱动 IC设置于第二凹槽内， 所述下基 板上布置有第二导线， 驱动 IC设置有引脚， 第二导线的一端与驱动 IC的引脚 电连接； 焊料为导电焊料， 上基板上的第一导线的另一端和下基板上的第二导 线的另一端通过导电焊料电接触。  In order to achieve the above object, the solution proposed by the present invention is: a silicon-based LED module multi-layer superposition structure, comprising a light source module layer and a driving module layer, the light source module layer and the driving module layer are superimposed and The light source module layer includes an upper substrate and an LED chip, and a surface of the upper substrate opposite to the driving module layer is provided with a first groove, and the LED chip is disposed in the first groove. a first wire is disposed on the upper substrate, the LED chip is provided with a pin, and one end of the first wire is electrically connected to a pin of the LED chip; the driving module layer includes a lower substrate and a driving IC, and the lower substrate and the bottom substrate The light source module layer is provided with a second groove on a side surface thereof, the driving IC is disposed in the second groove, the second wire is disposed on the lower substrate, and the driving IC is provided with a pin and a second wire One end is electrically connected to the pin of the driver IC; the solder is conductive solder, and the other end of the first wire on the upper substrate and the other end of the second wire on the lower substrate are electrically contacted by the conductive solder.
其中， 所述下基板相对所述光源模组层的一侧表面设有至少一个第三凹槽， 第三凹槽内容置所述导电的焊料。 The lower substrate is provided with at least one third groove on a side surface of the light source module layer. The third recess contains the conductive solder.
其中， 所述第三凹槽包括多个， 在下基板的截面上所述多个第三凹槽呈锯 齿状排布。  Wherein, the third groove comprises a plurality of, and the plurality of third grooves are arranged in a zigzag manner on a section of the lower substrate.
其中， 所述上基板沿厚度方向设有穿过所述第一导线的通孔， 上基板带有 通孔处的下表面设有所述第四凹槽。  The upper substrate is provided with a through hole passing through the first wire in a thickness direction, and the fourth surface is provided on a lower surface of the upper substrate with a through hole.
其中， 所述第二凹槽内设置填充胶， 驱动 IC位于填充胶内。 为了得到上述的基于硅基的 LED模组多层叠加结构， 本发明提供一种基于 硅基的 LED模组多层叠加结构的制作方法， 包括，  Wherein, a filling glue is disposed in the second groove, and the driving IC is located in the filling glue. In order to obtain the above-mentioned silicon-based LED module multi-layer superposition structure, the present invention provides a silicon-based LED module multi-layer superposition structure manufacturing method, including
制作光源模组层的步骤， 包括， al、 选取硅基片作为上基板， 采用微加工 技术在上基板表面刻蚀第一凹槽； a2、 采用微加工技术在上基板上根据不同的 电路布置第一导线； a3、 采用微加工技术在第一凹槽内设置 LED芯片， LED芯 片的引脚电连接在第一导线的一端；  The steps of fabricating the light source module layer include: al, selecting a silicon substrate as the upper substrate, and etching the first recess on the surface of the upper substrate by using micromachining technology; a2, using different microcircuit processing techniques on the upper substrate according to different circuits a first wire; a3, using an micromachining technique to provide an LED chip in the first recess, the pin of the LED chip being electrically connected to one end of the first wire;
制作驱动模组层的步骤， 包括， bl、 选取硅基片作为下基板， 采用微加工 技术在下基板表面刻蚀第二凹槽； b2、 采用微加工技术在下基板上根据不同的 电路布置第二导线， 在第二凹槽中设置驱动 IC, 驱动 IC的引脚电连接在第二导 线的一端；  The step of fabricating the driver module layer includes: bl, selecting a silicon substrate as a lower substrate, and etching a second recess on the surface of the lower substrate by using a micro-machining technique; b2, using a micro-machining technique on the lower substrate according to different circuit arrangements a wire, a driving IC is disposed in the second groove, and a pin of the driving IC is electrically connected to one end of the second wire;
叠加光源模组层和驱动模组层的步骤， 包括， cl、 在下基板刻蚀第二凹槽 的表面上包括上、 下基板设置导电线的另一端对应位置处设置导电焊球； c2、 将制作好的光源模组层的上基板刻蚀第一凹槽的背侧表面与下基板刻蚀第二凹 槽的表面相对适配相叠， 熔化导电焊球使光源模组层和驱动模组层焊接在一起 并将上、 下基板的导电线电连接。  The step of superimposing the light source module layer and the driving module layer includes: cl, providing a conductive solder ball at a position corresponding to the other end of the upper substrate and the second substrate on which the upper and lower substrates are disposed on the surface of the second recess; c2; The upper substrate of the fabricated light source module layer etches the back surface of the first recess and the surface of the lower substrate etches the second recess, and fuses the conductive solder ball to make the light source module layer and the driving module The layers are soldered together and the conductive lines of the upper and lower substrates are electrically connected.
其中，所述步骤 bl中，还在所述下基板的上表面上刻蚀至少一个第三凹槽， 所述导电焊球容置于第三凹槽。  In the step bl, at least one third recess is also etched on the upper surface of the lower substrate, and the conductive solder ball is accommodated in the third recess.
其中， 所述第三 槽包括多个， 下基板的截面上， 多个第三 槽呈锯齿状。 其中， 所述步骤 al中， 所述上基板沿厚度方向钻有穿过所述第一导线的通 孔， 在上基板带有通孔处的相对下基板一侧表面刻蚀第四凹槽。  Wherein, the third groove comprises a plurality of sections on the lower substrate, and the plurality of third grooves are in a zigzag shape. Wherein, in the step al, the upper substrate is drilled with a through hole passing through the first wire in a thickness direction, and a fourth groove is etched on a surface opposite to the lower substrate at a through hole of the upper substrate.
其中， 所述步骤 b2中， 在所述第二 槽中安装驱动 IC后， 在第二 槽内 本发明的有益效果为： 区别于现有技术的 LED封装指将芯片固于支架上， 于芯片及支架以金线作电连接， 再以硅胶作密封， 本发明的基于硅基的 LED模 组多层叠加结构， 包括光源模组层和驱动模组层， 所述光源模组层和驱动模组 层焊接， 光源模组层包括上基板和 LED芯片， LED芯片设置于上基板的第一凹 槽内， 驱动模组层包括下基板和驱动 IC, 驱动 IC设置于下基板的第二凹槽内， 然后上基板和下基板叠加在一起， 这种集成的设计更具灵活性、 模组占位面积 大大减少、 灯具组装大大筒化、 减低电连接功率损耗、 系统体积更小、 省去支 架及封装成本、 减低电连接损耗提升功率、 减低机械连接热阻提升散热效果。 而基于硅基的 LED模组多层叠加结构的制作方法， 采用微加工技术能准确控制 微尺寸刻蚀、 布线以及对应 LED芯片和驱动 IC的封装， 制作的精确度一般在 微米， 所以以此技术生产的模组， 能准确控制微尺寸刻蚀、 布线以对应 LED芯 片和驱动 IC的封装， 成品尺寸可以更小。 附图说明 Wherein, in the step b2, after the driver IC is installed in the second slot, in the second slot The beneficial effects of the invention are as follows: The LED package different from the prior art refers to fixing the chip on the bracket, electrically connecting the chip and the bracket with a gold wire, and sealing with the silica gel, the silicon-based LED module of the invention The multi-layer superimposing structure comprises a light source module layer and a driving module layer, wherein the light source module layer and the driving module layer are soldered, the light source module layer comprises an upper substrate and an LED chip, and the LED chip is disposed on the first concave surface of the upper substrate In the slot, the driving module layer includes a lower substrate and a driving IC. The driving IC is disposed in the second recess of the lower substrate, and then the upper substrate and the lower substrate are stacked together. The integrated design is more flexible and the module is occupied. The bit area is greatly reduced, the lamp assembly is greatly reduced, the electrical connection power loss is reduced, the system volume is smaller, the bracket and package cost are saved, the electrical connection loss is reduced, the power is reduced, and the mechanical connection thermal resistance is reduced to improve the heat dissipation effect. The manufacturing method of the multi-layer superposition structure of the silicon-based LED module adopts the micro-machining technology to accurately control the micro-scale etching, wiring and the corresponding LED chip and the driver IC package, and the precision of the fabrication is generally in the micrometer, so The module produced by the technology can accurately control the micro-scale etching and wiring to correspond to the package of the LED chip and the driver IC, and the finished product size can be smaller. DRAWINGS
图 1为本发明的基于硅基的 LED模组多层叠加结构的截面示意图； 图 2为本发明的基于硅基的 LED模组多层叠加结构的制作方法的流程示意 图。  1 is a schematic cross-sectional view showing a multi-layer superimposed structure of a silicon-based LED module according to the present invention; and FIG. 2 is a flow chart showing a method for fabricating a multi-layer superimposed structure of a silicon-based LED module according to the present invention.
图中： 1、 上基板； 11、 LED芯片； 12、 第一凹槽； 13、 通孔； 14、 第四凹 槽； 2、 下基板； 21、 驱动 IC; 22、 第二凹槽； 23、 第三凹槽； 3、 焊料； 4、 导 电金属。 具体实施方式  In the figure: 1, the upper substrate; 11, the LED chip; 12, the first groove; 13, the through hole; 14, the fourth groove; 2, the lower substrate; 21, the driving IC; 22, the second groove; , the third groove; 3, solder; 4, conductive metal. detailed description
为详细说明本发明的技术内容、 构造特征、 所实现目的及效果， 以下结合 实施方式并配合附图详予说明。  The detailed description of the technical contents, structural features, objects and effects of the present invention will be described in detail below with reference to the accompanying drawings.
请参阅图 1以及图 2, 本实施方式的一种基于硅基的 LED模组多层叠加结 构， 包括光源模组层和驱动模组层， 光源模组层和驱动模组层叠加且由焊料焊 接； 所述光源模组层包括上基板 1和 LED芯片 11 , 所述上基板 1与驱动模组层 相背一侧表面设有第一凹槽 12, 所述 LED芯片 11设置于第一凹槽 12内， 所述 上基板 1上布置有第一导线， LED芯片 11设置有引脚， 第一导线的一端与 LED 芯片 11的引脚电连接； 所述驱动模组层包括下基板 2和驱动 IC21 , 所述下基板 2与所述光源模组层相对一侧表面设有第二凹槽 22, 所述驱动 IC21设置于第二 凹槽 22内， 所述下基板 2上布置有第二导线， 驱动 IC21设置有引脚， 第二导 线的一端与驱动 IC的引脚电连接； 焊料 3为导电的焊料， 上基板 1上的第一导 线的另一端和下基板 2上的第二导线的另一端通过导电的焊料 3电接触。 本发 明将 LED芯片直接与基板连接， 大大的提高了散热效率， 驱动 IC集成在下基 板上， 可以直接外接电源， 无需外接驱动， 使用方便， 而光源模组层和驱动模 组层叠加的方式， 大大的减小占位面积， 节约空间， 同时本发明减少了 LED封 装支架和减少了驱动与整流管的封装， 大大的节约成本。 Referring to FIG. 1 and FIG. 2 , a silicon-based LED module multi-layer stacking structure of the embodiment includes a light source module layer and a driving module layer, and the light source module layer and the driving module layer are superposed and soldered. Welding; the light source module layer includes an upper substrate 1 and an LED chip 11, the upper substrate 1 and the driving module layer A first groove 12 is disposed on the opposite side surface, the LED chip 11 is disposed in the first groove 12, a first wire is disposed on the upper substrate 1, and the LED chip 11 is provided with a lead, a first wire One end is electrically connected to the pin of the LED chip 11; the driving module layer includes a lower substrate 2 and a driving IC 21, and a surface of the lower substrate 2 and the surface of the light source module layer are provided with a second groove 22, The driving IC 21 is disposed in the second recess 22, the second substrate 2 is disposed with a second wire, the driving IC 21 is provided with a pin, and one end of the second wire is electrically connected to a pin of the driving IC; the solder 3 is electrically conductive The solder, the other end of the first wire on the upper substrate 1 and the other end of the second wire on the lower substrate 2 are electrically contacted by the conductive solder 3. The invention directly connects the LED chip to the substrate, greatly improves the heat dissipation efficiency, the driving IC is integrated on the lower substrate, can directly connect the external power source, does not need an external driving, is convenient to use, and the light source module layer and the driving module layer are superimposed, The space area is greatly reduced, and the space is saved. At the same time, the invention reduces the LED package bracket and reduces the packaging of the driving and rectifier tubes, thereby greatly saving cost.
本实施例中， 所述下基板 2相对所述光源模组层的一侧表面设有至少一个 第三凹槽 23, 第三凹槽 23内容置所述导电的焊料 3, 这样在光源模组层和驱动 模组层相互叠加焊接的时候， 方便焊料的设置和增加焊接的稳固， 进一步的， 所述第三凹槽 23包括多个， 在下基板 2的截面上所述多个第三凹槽 23呈锯齿 状排布， 这样进一步增加焊接的稳固， 本实施例中， 所述的焊料 3 —般设置的 位置是根据具体的布线有关的， 根据具体的布线， 焊料将光源模组层和驱动模 组层之间的导线电连接上， 这样可以方便光源模组层和驱动模组层之间的电连 接， 同时也可以提高生产的速率。  In this embodiment, the lower substrate 2 is provided with at least one third recess 23 on a side surface of the light source module layer, and the third recess 23 is provided with the conductive solder 3, so that the light source module When the layer and the driving module layer are superimposed and soldered to each other, the setting of the solder is facilitated and the soldering is stabilized. Further, the third recess 23 includes a plurality of the third recesses on the cross section of the lower substrate 2. 23 is arranged in a zigzag manner, which further increases the stability of the soldering. In this embodiment, the position of the solder 3 is generally set according to a specific wiring. According to the specific wiring, the solder will be the light source module layer and the driving. The wires between the module layers are electrically connected, which facilitates the electrical connection between the light source module layer and the driver module layer, and also increases the production rate.
本实施例中， 所述上基板 1沿厚度方向设有穿过所述第一导线的通孔 13 , 上基板 1带有通孔 13处的下表面设有所述第四凹槽 14, 第四凹槽 14, 通孔 13 可以方便上基板 1上的第一导线穿过通孔 13与下基板 2上的第二导线电连接， 而第四凹槽 14可以将第一导电线稳固， 同时可以增加上、 下基板焊接的稳固。 而在本实施例中， 所述的第一导线和第二导线， 一般为导电金属 4, 根据不同的 电路直接设置在上、 下基板上， 然后上基板上的导电金属 4通过通孔 13绕到上 基板 1的靠近下基板 2的一侧， 通过导电的焊料 3与下基板 2上的导电金属 4 电连接。  In this embodiment, the upper substrate 1 is provided with a through hole 13 passing through the first wire in a thickness direction, and the fourth surface 14 is provided on a lower surface of the upper substrate 1 with a through hole 13 The four recesses 14 , the through holes 13 can facilitate the first wires on the upper substrate 1 to be electrically connected to the second wires on the lower substrate 2 through the through holes 13 , and the fourth grooves 14 can stabilize the first conductive wires while It is possible to increase the stability of the soldering of the upper and lower substrates. In this embodiment, the first wire and the second wire are generally conductive metal 4, which are directly disposed on the upper and lower substrates according to different circuits, and then the conductive metal 4 on the upper substrate is wound through the through hole 13. To the side of the upper substrate 1 close to the lower substrate 2, the conductive metal 3 is electrically connected to the conductive metal 4 on the lower substrate 2.
本实施例中， 所述第二凹槽 22内设置填充胶， 驱动 IC21位于填充胶内， 这样可以对驱动 IC21进行保护。 为了得到上述的基于硅基的 LED模组多层叠加结构， 本发明公开了一种基 于硅基的 LED模组多层叠加结构的制作方法， 包括， In this embodiment, the second recess 22 is provided with a filling glue, and the driving IC 21 is located in the filling glue. This protects the driver IC 21. In order to obtain the above-mentioned silicon-based LED module multi-layer superposition structure, the present invention discloses a silicon-based LED module multi-layer superposition structure manufacturing method, including
制作光源模组层的步骤， 包括， al、 选取硅基片作为上基板 1 , 采用微加 工技术在上基板 1表面刻蚀第一凹槽 12, 同时在上基板 1沿厚度方向钻有穿过 所述第一导线的通孔 13, 在上基板带有通孔处的相对下基板一侧表面刻蚀第四 凹槽； a2、 采用微加工技术在上基板 1上根据不同的电路布置第一导线； a3、 采 用微加工技术在第一凹槽 12内设置 LED芯片 11 , LED芯片 11的引脚电连接在 第一导线的一端， 另一端穿过所述通孔 13;  The steps of fabricating the light source module layer include: al, selecting a silicon substrate as the upper substrate 1, and etching the first recess 12 on the surface of the upper substrate 1 by using micromachining technology, while drilling through the upper substrate 1 in the thickness direction The through hole 13 of the first wire etches the fourth groove on the opposite substrate side surface of the upper substrate with the through hole; a2, the first circuit is arranged on the upper substrate 1 according to different circuit arrangements by using micromachining technology a wire; a3, using a micromachining technology in the first groove 12 is provided with an LED chip 11, the pin of the LED chip 11 is electrically connected to one end of the first wire, the other end through the through hole 13;
制作驱动模组层的步骤， 包括， bl、 选取硅基片作为下基板 2, 采用微加工 技术在下基板 2表面刻蚀第二凹槽 22, 同时刻蚀至少一个第三凹槽 23; b2、 采 用微加工技术在下基板 2上根据不同的电路布置第二导线， 在第二凹槽 22中设 置驱动 IC21 , 驱动 IC21的引脚电连接在第二导线的一端， 然后向第二凹槽 22 内注入填充胶将所述驱动 IC包裹；  The step of fabricating the driver module layer includes: bl, selecting a silicon substrate as the lower substrate 2, etching the second recess 22 on the surface of the lower substrate 2 by using micromachining technology, and etching at least one third recess 23; b2; The second wire is arranged on the lower substrate 2 according to different circuits by using a micro-machining technique, and the driving IC 21 is disposed in the second groove 22, and the pin of the driving IC 21 is electrically connected to one end of the second wire, and then to the second groove 22 Injecting a filler to wrap the driver IC;
叠加光源模组层和驱动模组层的步骤， 包括， cl、 在下基板 2刻蚀第二凹 槽 22的表面上包括上、 下基板设置第一、 第二导电线的另一端对应位置处设置 导电焊球（焊料 3的一种形态）； 本实施力中， 第三 槽 23和第四 槽 14内均 设置有导电焊球； c2、 将制作好的光源模组层的上基板 1刻蚀第一凹槽 12的背 侧表面与下基板 2刻蚀第二凹槽 22的表面相对适配相叠， 熔化导电焊球使光源 模组层和驱动模组层焊接在一起并将上、 下基板的导电线电连接， 在焊接过程 中使用焊料表面张力自对准对齐叠加对位方法。  The step of superposing the light source module layer and the driving module layer includes: cl, setting the corresponding position of the other end of the upper and lower substrates including the first and second conductive lines on the surface of the lower substrate 2 to etch the second recess 22 Conductive solder ball (a form of solder 3); in this embodiment, the third groove 23 and the fourth groove 14 are provided with conductive solder balls; c2, the upper substrate 1 of the fabricated light source module layer is etched The back side surface of the first recess 12 and the surface of the lower substrate 2 etch the second recess 22 are oppositely fitted, and the conductive solder ball is melted to weld the light source module layer and the driving module layer together and to be up and down. The conductive lines of the substrate are electrically connected, and the solder surface tension is used to self-align the alignment superposition alignment method during the soldering process.
本实施例中， 所述第三凹槽 23包括多个， 下基板 2的截面上， 多个第三凹 槽呈锯齿状， 这样进一步增加焊接的稳固。  In this embodiment, the third recess 23 includes a plurality of sections on the lower substrate 2, and the plurality of third recesses are serrated, which further increases the stability of the soldering.
在本实施例中， 上、 下基板的上刻蚀第一凹槽 12、 第二凹槽 22、 第三凹槽 23和第四凹槽 14均是在微加工技术下刻蚀的，所述的第一导线和第二导线在上、 下基板上的布线， 也是在微加工技术下完成的， 同样的， LED芯片和驱动 IC的 封装等也是在微加工技术下完成的， 而微加工技术 （Micromachining) 是建基於 微机电系统 （Micro Electro-Mechanical System, MEMS) 的制作技术，类似于生产 半导体的技术如表面微加工、 体型微加工等工艺。 制作的精确度一般在微米， 所以以此技术生产的模组， 能准确控制微尺寸刻蚀及布线以对应小颗片封装， 成品尺寸可以更小。 In this embodiment, the upper etched first groove 12, the second groove 22, the third groove 23, and the fourth groove 14 of the upper and lower substrates are all etched under micromachining technology, The wiring of the first wire and the second wire on the upper and lower substrates is also completed under the micro-machining technology. Similarly, the packaging of the LED chip and the driver IC is also performed under the micro-machining technology, and the micro-machining technology (Micromachining) is based on The manufacturing technology of Micro Electro-Mechanical System (MEMS) is similar to the technology of producing semiconductors such as surface micromachining and bulk micromachining. The precision of the fabrication is generally in the micrometer, so the module produced by this technology can accurately control the micro-scale etching and wiring to correspond to the small chip package, and the finished product size can be smaller.
本发明在上、 下基板叠加的时候， 采用焊料表面张力自对准对齐叠加对位 方法， 此方法工艺筒单且精确自动对位， 而焊料表面张力自对准对齐叠加对位 方法为， 利用回流焊接（reflow )时焊料表面张力进行自对准是在封装设计中常 用的方法， 在加温的情况下， 通常 200-300摄氏度， 焊料融化成液体， 焊料的表 面张力使得焊料液体倾向于向表面最小的形态变形， 利用此表面张力， 可以使 焊料上、 下两侧的对应焊盘对正， 因此， 焊接前的一些误差可以被校准， 筒化 了焊接前的对正工作。  The invention adopts a solder surface tension self-alignment alignment superposition alignment method when the upper and lower substrates are superimposed, and the method is simple and precise automatic alignment, and the solder surface tension self-alignment alignment superposition alignment method is utilized Self-alignment of solder surface tension during reflow is a commonly used method in package design. In the case of heating, usually 200-300 degrees Celsius, the solder melts into a liquid, and the surface tension of the solder makes the solder liquid tend to The smallest surface deformation of the surface. With this surface tension, the corresponding pads on the upper and lower sides of the solder can be aligned. Therefore, some errors before soldering can be calibrated, and the alignment work before soldering is completed.
本发明的基于硅基的 LED模组多层叠加结构的制作方法， 以叠加基板方式 集成 LED芯片与驱动 IC的结构， 使得基于硅基的 LED模组多层叠加结构更具 灵活性， 可以在第一凹槽或第二凹槽中设配的设置安装需要的电气； 叠加后占 位面积大大减少， 灯具组装大大筒化， 加快生产和节约原料； 由于线路连接点 变少， 只是通过导电的焊料连接， 减低电连接功率的损耗、 提升功率， 节省电 能； 本发明还省去支架及封装成本、 减低机械连接热阻提升散热效果。  The manufacturing method of the multi-layer superposition structure of the silicon-based LED module of the invention integrates the structure of the LED chip and the driving IC by superimposing the substrate, so that the multi-layer superposition structure of the silicon-based LED module is more flexible, and The first groove or the second groove is provided with the electrical setting required for installation; the occupied area is greatly reduced after the stacking, the assembly of the lamp is greatly enlarged, the production and the raw materials are accelerated, and the connection point is reduced, only through the conductive The solder connection reduces the loss of the electrical connection power, increases the power, and saves the electric energy. The invention also saves the cost of the bracket and the package, reduces the thermal resistance of the mechanical connection, and improves the heat dissipation effect.
以上所述仅为本发明的实施例， 并非因此限制本发明的专利范围， 凡是利 用本发明说明书及附图内容所作的等效结构或等效流程变换， 或直接或间接运 用在其他相关的技术领域， 均同理包括在本发明的专利保护范围内。  The above is only the embodiment of the present invention, and is not intended to limit the scope of the invention, and the equivalent structure or equivalent process transformations made by the specification and the drawings of the present invention may be directly or indirectly applied to other related technologies. The scope of the invention is included in the scope of patent protection of the present invention.

Claims

权 利 要 求 书 claims
1、 一种基于硅基的 LED模组多层叠加结构， 其特征在于， 包括光源模组 层和驱动模组层， 光源模组层和驱动模组层叠加且由焊料焊接； 1. A multi-layer stacked structure of a silicon-based LED module, which is characterized in that it includes a light source module layer and a drive module layer, and the light source module layer and the drive module layer are stacked and welded by solder;
所述光源模组层包括上基板和 LED芯片， 所述上基板与驱动模组层相背一 侧表面设有第一凹槽， 所述 LED芯片设置于第一凹槽内， 所述上基板上布置有 第一导线， LED芯片设置有引脚， 第一导线的一端与 LED芯片的引脚电连接； 所述驱动模组层包括下基板和驱动 IC, 所述下基板与所述光源模组层相对 一侧表面设有第二凹槽， 所述驱动 IC设置于第二凹槽内， 所述下基板上布置有 第二导线， 驱动 IC设置有引脚， 第二导线的一端与驱动 IC的引脚电连接； 焊料为导电焊料， 上基板上的第一导线的另一端和下基板上的第二导线的 另一端通过导电焊料电接触。 The light source module layer includes an upper substrate and an LED chip. A first groove is provided on the surface of the upper substrate opposite to the driving module layer. The LED chip is disposed in the first groove. The upper substrate A first wire is arranged on the LED chip, and the LED chip is provided with a pin. One end of the first wire is electrically connected to the pin of the LED chip; the driving module layer includes a lower substrate and a driving IC, and the lower substrate is connected to the light source module. A second groove is provided on the surface of the opposite side of the assembly layer. The driver IC is arranged in the second groove. A second conductor is arranged on the lower substrate. The driver IC is provided with pins. One end of the second conductor is connected to the driver. The pins of the IC are electrically connected; the solder is conductive solder, and the other end of the first conductor on the upper substrate and the other end of the second conductor on the lower substrate are in electrical contact through the conductive solder.
2、 根据权利要求 1所述的基于硅基的 LED模组多层叠加结构， 其特征在 于， 所述下基板相对所述光源模组层的一侧表面设有至少一个第三凹槽， 第三 槽内容置所述导电的焊料。 2. The silicon-based LED module multi-layer stack structure according to claim 1, characterized in that, the lower substrate is provided with at least one third groove on one side surface of the light source module layer, The conductive solder is placed in the three slots.
3、 根据权利要求 2所述的基于硅基的 LED模组多层叠加结构， 其特征在 于， 所述第三 槽包括多个， 在下基板的截面上所述多个第三 槽呈锯齿状排 布。 3. The silicon-based LED module multi-layer stack structure according to claim 2, wherein the third grooves include a plurality of third grooves arranged in a zigzag shape on the cross section of the lower substrate. cloth.
4、 根据权利要求 2所述的基于硅基的 LED模组多层叠加结构， 其特征在 于， 所述上基板沿厚度方向设有穿过所述第一导线的通孔， 上基板带有通孔处 的下表面设有所述第四凹槽。 4. The silicon-based LED module multi-layer stack structure according to claim 2, wherein the upper substrate is provided with a through hole passing through the first conductor along the thickness direction, and the upper substrate has a through hole. The fourth groove is provided on the lower surface of the hole.
5、 根据权利要求 1所述的基于硅基的 LED模组多层叠加结构， 其特征在 于， 所述第二凹槽内设置填充胶， 驱动 IC位于填充胶内。 5. The multi-layer stacked structure of the silicon-based LED module according to claim 1, characterized in that a filling glue is provided in the second groove, and the driving IC is located in the filling glue.
6、 一种基于硅基的 LED模组多层叠加结构的制作方法， 其特征在于， 包 括， 6. A method for manufacturing a silicon-based LED module multi-layer stack structure, which is characterized by:
制作光源模组层的步骤， 包括， al、 选取硅基片作为上基板， 采用微加工 技术在上基板表面刻蚀第一凹槽； a2、 采用微加工技术在上基板上根据不同的 电路布置第一导线； a3、 采用微加工技术在第一凹槽内设置 LED芯片， LED芯 片的引脚电连接在第一导线的一端； The steps of making the light source module layer include: a. Selecting a silicon substrate as the upper substrate, and using micromachining technology to etch a first groove on the surface of the upper substrate; a2. Using micromachining technology to arrange different circuits on the upper substrate The first wire; a3. Use micromachining technology to set the LED chip in the first groove, and the pin of the LED chip is electrically connected to one end of the first wire;
制作驱动模组层的步骤， 包括， bl、 选取硅基片作为下基板， 采用微加工 技术在下基板表面刻蚀第二凹槽； b2、 采用微加工技术在下基板上根据不同的 电路布置第二导线， 在第二凹槽中设置驱动 IC, 驱动 IC的引脚电连接在第二导 线的一端； The steps for making the driver module layer include: bl. Selecting the silicon substrate as the lower substrate and using micro-machining technology to etch a second groove on the surface of the lower substrate; b2. Use micromachining technology to arrange second wires on the lower substrate according to different circuits, set a driver IC in the second groove, and have the pins of the driver IC electrically connected to the second wire one end of;
叠加光源模组层和驱动模组层的步骤， 包括， cl、 在下基板刻蚀第二凹槽 的表面上包括上、 下基板设置导电线的另一端对应位置处设置导电焊球； c2、 将制作好的光源模组层的上基板刻蚀第一凹槽的背侧表面与下基板刻蚀第二凹 槽的表面相对适配相叠， 熔化导电焊球使光源模组层和驱动模组层焊接在一起 并将上、 下基板的导电线电连接。 The step of overlaying the light source module layer and the driving module layer includes, cl. Setting conductive solder balls on the surface of the lower substrate etched with the second groove, including the upper and lower substrates setting conductive lines at corresponding positions at the other ends; c2. The backside surface of the first groove etched on the upper substrate of the light source module layer is matched with the surface of the second groove etched on the lower substrate, and the conductive solder balls are melted to make the light source module layer and the driving module The layers are soldered together and electrically connect the conductive lines of the upper and lower substrates.
7、 根据权利要求 6的基于硅基的 LED模组多层叠加结构的制作方法， 其 特征在于，所述步骤 bl中，还在所述下基板的上表面上刻蚀至少一个第三凹槽， 所述导电焊球容置于第三凹槽。 7. The method for manufacturing a silicon-based LED module multi-layer stack structure according to claim 6, characterized in that in step b1, at least one third groove is also etched on the upper surface of the lower substrate. , the conductive solder ball is accommodated in the third groove.
8、 根据权利要求 7的基于硅基的 LED模组多层叠加结构的制作方法， 其 特征在于， 所述第三凹槽包括多个， 下基板的截面上， 多个第三凹槽呈锯齿状。 8. The method for manufacturing a silicon-based LED module multi-layer superposed structure according to claim 7, characterized in that the third grooves include a plurality of third grooves, and on the cross section of the lower substrate, the plurality of third grooves are in a zigzag shape. shape.
9、 根据权利要求 7的基于硅基的 LED模组多层叠加结构的制作方法， 其 特征在于， 所述步骤 al中， 所述上基板沿厚度方向钻有穿过所述第一导线的通 孔， 在上基板带有通孔处的相对下基板一侧表面刻蚀第四凹槽。 9. The method for manufacturing a silicon-based LED module multi-layer stack structure according to claim 7, characterized in that, in the step a1, the upper substrate is drilled with a through hole passing through the first conductor along the thickness direction. hole, and a fourth groove is etched on the surface of the side of the upper substrate opposite to the lower substrate where the through hole is.
10、 根据权利要求 6的基于硅基的 LED模组多层叠加结构的制作方法， 其 特征在于， 所述步骤 b2中， 在所述第二 槽中安装驱动 IC后， 在第二 槽内 10. The method for manufacturing a silicon-based LED module multi-layer stack structure according to claim 6, characterized in that in step b2, after installing the driver IC in the second slot, in the second slot
PCT/CN2013/079509 2013-07-15 2013-07-17 Multilayer stacking structure of silicon-based led module, and manufacturing method WO2015006936A1 (en)

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