CN201017022Y - Semiconductor lighting device service life accelerate tester - Google Patents
Semiconductor lighting device service life accelerate tester Download PDFInfo
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- CN201017022Y CN201017022Y CN 200720107239 CN200720107239U CN201017022Y CN 201017022 Y CN201017022 Y CN 201017022Y CN 200720107239 CN200720107239 CN 200720107239 CN 200720107239 U CN200720107239 U CN 200720107239U CN 201017022 Y CN201017022 Y CN 201017022Y
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- emitting semiconductor
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Abstract
An accelerated testing device for a semiconductor light emitting apparatus belongs to the testing field of a semiconductor light emitting apparatus and an applied product. A prior art is provided with the defects of the complicated operation and the inaccurate measuring result. The utility model comprises a temperature control box, a test sample support arranged in the temperature control box and a light transmitter. One end of the light transmitter is an acquisition end, which is arranged in coordination with the support, while the other end of the transmitter is a measuring end, which is connected with a photometer. By setting the light transmitter, the photometer can be directly used in the temperature-ascending course of a test to measure the light power or the light flux of test sample, so as to avoid errors caused by repeated taking and putting, and temperature rising and falling. The utility model is convenient for operation.
Description
[technical field]
The utility model belongs to the field tests of light emitting semiconductor device and application product, relates to a kind of light emitting semiconductor device life-span accelerated test device.
[background technology]
Light emitting semiconductor device comprises light emitting diode (LED) and semiconductor laser (LD) etc., and life-span and reliability are to weigh one of light emitting semiconductor device and the most important performance index of application product thereof.Traditional life testing method is actual lighting under its normal running conditions with device and application product, calculates its life-span according to its light decay or out-of-service time, because the life-span of light emitting semiconductor device is generally very long, is not easy to practical operation and application.
The method that adopts the intensification accelerated test to test its correlated performance has also appearred at present, i.e. working temperature by the rising device, quicken its aging (light decay, inefficacy) process, and in this process, measure effective expected life that correlation parameter calculates light emitting semiconductor device.Usual way is to place high-temperature test chamber to toast device, takes out test device at set intervals, measures its luminous power or luminous flux, according to the pad value of luminous power under the high temperature or luminous flux, extrapolates its life-span under normal operation.In this procedure, the test specimen back test of must repeated multiple times from chamber, taking out, lower the temperature, complicated operation inconvenience, and also each intensification and temperature-fall period can introduce many uncertain factors, influences the accuracy of test result.
[utility model content]
In order to overcome the above-mentioned defective that exists in the prior art, the utility model provides a kind of light emitting semiconductor device life-span accelerated test device, to reach easy for operation, to measure purpose accurately.
For this reason, the utility model is by the following technical solutions: light emitting semiconductor device life-span accelerated test device, it is characterized in that it comprises temperature control box, is located at test specimen supporting base and light transmission in the temperature control box, one end of described light transmission is a collection terminal, collection terminal and supporting base are equipped with, the other end of described light transmission is a measuring junction, and this measuring junction links to each other with photometer.During test, place on the supporting base test specimen and energising, control control case heats up, the light that test specimen sent is transferred to photometer by light transmission, like this, in test process, do not need through opening and closing casing, picking and placeing and the just directly luminous power of experiment with measuring sample or luminous flux of heating and cooling process repeatedly, easy to operate, measurement result is accurate.Light transmission can be resistant to elevated temperatures optical fiber or lens, and its quantity and position can be corresponding one by one with the quantity and the putting position of tested sample.
As further improving and replenishing to technique scheme, the utility model adopts following technical measures: described light transmission has a plurality of, the front side light path of each light transmission light that collection terminal is accepted is provided with a light collecting barrel, prevent influencing each other of each test specimen, the light that allows each sample send enters the collection terminal that only shines corresponding light transmission behind the corresponding light collecting barrel, guarantees measurement accuracy.
Be provided with collector lens in the described light collecting barrel, optically focused improves the intensity of light transmission institute acknowledge(ment) signal.
Be provided with the mixed light ball between described light transmission measuring junction and the photometer, the mixed light ball is provided with incidence hole and light hole, and incidence hole and light transmission measuring junction are corresponding to be provided with, and the light hole place then connects photometer.Photometer can be spectrometer or photometer, on the mixed light ball two or more light holes can be set, and the light hole place connects spectrometer and photometer respectively simultaneously, to record different data.
Described each light transmission connects a photometer respectively, the measuring accuracy height.
Described a plurality of light transmission matches with a photometer by multipath light scanning mechanism, only needs to use a photometer, and is easy to use.
Described multipath light scanning mechanism is a translation scan mechanism, and this moment, the measuring junction of each light transmission was arranged in a linear, and the optical data of each light transmission is measured in photometer translation on the track of motor-driven lower edge and above-mentioned straight line parallel.
Described multipath light scanning mechanism is a rotary scanning mechanism.This moment, photometer was located on the universal stage, and the measuring junction of each light transmission is circumferential arrangement around universal stage, and photometer drives at universal stage and rotates the optical data of measuring each light transmission.
Be provided with temperature sensor in the described temperature control box, temperature sensor links to each other with temperature measurer.During test, temperature sensor is connected on the pipe base or shell of sample, to record the working temperature of sample.
The test specimen supporting base comprises support and the support plate of being located on the support, described transmitter collection terminal, light collecting barrel and collector lens all are fixed on the support, support plate is used to put test specimen, and transmitter collection terminal, light collecting barrel and collector lens stationkeeping guarantee that experimental result is accurate.
Beneficial effect: the utility model makes the luminous power or the luminous flux that can directly record test specimen in experiment intensification engineering with photometer by light transmission is set, and the measuring error of avoided picking and placeing repeatedly, heating and cooling process bringing is easy to operate.
[description of drawings]
Fig. 1 is the utility model structural representation.
Fig. 2 is another structural representation of the present utility model.
Fig. 3 is the structural representation of the utility model mixed light ball portion.
Fig. 4 is the structural representation of translation scan mechanism.
Fig. 5 is the structural representation of rotary scanning mechanism.
[embodiment]
Light emitting semiconductor device life-span accelerated test device as shown in Figure 1, 2, be provided with test specimen supporting base 2 in the temperature control box 1, an end of light transmission 3 is a collection terminal, and collection terminal is located at the supporting base top, the other end of light transmission 3 is a measuring junction, and measuring junction links to each other with photometer 4.
Supporting base 2 comprises support 21 and is located at support plate 22 on the support, and light transmission 3 can be resistant to elevated temperatures optical fiber or lens, and its quantity can be one or more, is arranged on the support 21 according to the quantity and the putting position correspondence of test specimen.The downside of light transmission 3 is provided with light collecting barrel 6, and collector lens 7 is set in the light collecting barrel 6.
Under the situation that a plurality of light transmissions 3 are set, can use many photometers 4 to link to each other one by one respectively with light transmission 3, also can use a photometer 4 to link to each other with a plurality of light transmissions 3 by multipath light scanning mechanism.Multipath light scanning mechanism can be translation scan mechanism (Fig. 4), and the measuring junction of each light transmission 3 is arranged in a linear, and photometer 4 translation on the track of motor 10 driving lower edges and above-mentioned straight line parallel receives the emergent light of each light transmission 3 respectively.Multipath light scanning mechanism also can be rotary scanning mechanism (Fig. 5), and the measuring junction of each light transmission 3 is circumferential arrangement around universal stage 11, and photometer 4 drives at universal stage 11 and rotates the emergent light that receives each light transmission 3 respectively.
During test, test specimen 5 is placed corresponding position on the support plate 22, on the pipe base of each test specimen 5 or shell, temperature sensor 8 is housed, this temperature sensor 8 can be thermoelectricity and occasionally is made up of thermopair and elasticity nickel sheet, thermopair is welded on the nickel sheet, the nickel sheet is fixed on the pipe base or shell of test specimen 5, and thermopair is received on the temperature measurer 9 of casing outside by the perforate of casing 1, and test specimen is electrically connected with the charger 13 of casing outside.
Photometer, charger and temperature measurer all can be by computer controlled automatic.Temperature control box also can be by its working temperature of computer control, computing machine writes down case temperature, electric current, voltage, power, relative luminous power or the light intensity of test specimen under a certain test temperature automatically, even spectrum, colorimetric parameter, according to the die-away curve of luminous power or light intensity, draw effective expected life of test specimen by the A Lunnizi formula extrapolation.
Claims (10)
1. light emitting semiconductor device life-span accelerated test device, it is characterized in that: it comprises temperature control box, is located at test specimen supporting base and light transmission in the temperature control box, one end of described light transmission is a collection terminal, collection terminal and supporting base are equipped with, the other end of described light transmission is a measuring junction, and this measuring junction links to each other with photometer.
2. light emitting semiconductor device life-span accelerated test device according to claim 1, it is characterized in that: described light transmission has a plurality of, and the front side light path of each light transmission light that collection terminal is accepted is provided with a light collecting barrel.
3. light emitting semiconductor device life-span accelerated test device according to claim 2 is characterized in that: be provided with collector lens in the described light collecting barrel.
4. according to claim 1,2 or 3 described light emitting semiconductor device life-span accelerated test devices, it is characterized in that: be provided with the mixed light ball between described light transmission measuring junction and the photometer, the mixed light ball is provided with incidence hole and light hole, incidence hole and light transmission measuring junction are corresponding to be provided with, and the light hole place then connects photometer.
5. according to claim 2 or 3 described light emitting semiconductor device life-span accelerated test devices, it is characterized in that: described each light transmission connects a photometer respectively.
6. according to claim 2 or 3 described light emitting semiconductor device life-span accelerated test devices, it is characterized in that: described a plurality of light transmissions match with a photometer by multipath light scanning mechanism.
7. light emitting semiconductor device life-span accelerated test device according to claim 6 is characterized in that: described multipath light scanning mechanism is a translation scan mechanism.
8. light emitting semiconductor device life-span accelerated test device according to claim 6 is characterized in that: described multipath light scanning mechanism is a rotary scanning mechanism.
9. according to claim 1,2 or 3 described light emitting semiconductor device life-span accelerated test devices, it is characterized in that: be provided with temperature sensor in the described temperature control box, temperature sensor links to each other with temperature measurer.
10. light emitting semiconductor device life-span accelerated test device according to claim 3, it is characterized in that: the test specimen supporting base comprises support and the support plate of being located on the support, and described transmitter collection terminal, light collecting barrel and collector lens all are fixed on the support.
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CN 200720107239 CN201017022Y (en) | 2007-03-13 | 2007-03-13 | Semiconductor lighting device service life accelerate tester |
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CN 200720107239 CN201017022Y (en) | 2007-03-13 | 2007-03-13 | Semiconductor lighting device service life accelerate tester |
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Cited By (17)
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CN101799357A (en) * | 2009-11-19 | 2010-08-11 | 杭州远方光电信息有限公司 | Light source test method and device thereof |
CN102288389A (en) * | 2011-05-11 | 2011-12-21 | 杭州远方光电信息股份有限公司 | Light source aging test measuring device |
CN102540107A (en) * | 2010-12-03 | 2012-07-04 | 三星Led株式会社 | Tray, testing apparatus and testing method using the same |
CN101782624B (en) * | 2009-01-15 | 2012-07-11 | 展晶科技(深圳)有限公司 | Method and system for estimating specifications of solid-state luminous element module |
CN102590723A (en) * | 2011-09-05 | 2012-07-18 | 工业和信息化部电子第五研究所 | Service life test online monitoring system for kilowatt large-power laser diode array |
GB2488569A (en) * | 2011-03-02 | 2012-09-05 | Feasa Entpr Ltd | Testing light emitting diode light sources in a climate controlled chamber |
CN102707212A (en) * | 2011-10-28 | 2012-10-03 | 杭州浙大三色仪器有限公司 | Device for detecting service life of light emitting diode (LED) in real time |
TWI425654B (en) * | 2009-01-07 | 2014-02-01 | Advanced Optoelectronic Tech | Methodology and system for predicting specification of solid state light emitting element |
CN103940586A (en) * | 2014-04-24 | 2014-07-23 | 工业和信息化部电子第五研究所 | Service life detecting method for intermediate infrared solid laser |
CN104237762A (en) * | 2014-07-23 | 2014-12-24 | 北京光电技术研究所 | Semiconductor laser testing device, system and method |
CN104345025A (en) * | 2013-08-02 | 2015-02-11 | 财团法人工业技术研究院 | Material aging test equipment and test method thereof |
CN104483100A (en) * | 2014-12-22 | 2015-04-01 | 工业和信息化部电子第五研究所 | Embedded overall control system for laser service life test instrument |
CN104808128A (en) * | 2015-03-31 | 2015-07-29 | 山西南烨立碁光电有限公司 | LED (light emitting diode) service life automatically testing device and method |
CN105258924A (en) * | 2015-11-06 | 2016-01-20 | 苏州耀腾光电有限公司 | Comprehensive tester for LED light |
CN105444995A (en) * | 2015-11-17 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | LED-lamp accelerated-life on-line detection equipment |
CN106772129A (en) * | 2016-11-14 | 2017-05-31 | 上海电机学院 | A kind of light fixture monitoring system and method for measuring lamp working time length |
CN116008767A (en) * | 2023-02-10 | 2023-04-25 | 安庆师范大学 | Non-contact characteristic item testing equipment and method for semiconductor photoelectric device |
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2007
- 2007-03-13 CN CN 200720107239 patent/CN201017022Y/en not_active Expired - Lifetime
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI425654B (en) * | 2009-01-07 | 2014-02-01 | Advanced Optoelectronic Tech | Methodology and system for predicting specification of solid state light emitting element |
CN101782624B (en) * | 2009-01-15 | 2012-07-11 | 展晶科技(深圳)有限公司 | Method and system for estimating specifications of solid-state luminous element module |
CN101799357B (en) * | 2009-11-19 | 2013-09-11 | 杭州远方光电信息股份有限公司 | Light source test method and device thereof |
CN101799357A (en) * | 2009-11-19 | 2010-08-11 | 杭州远方光电信息有限公司 | Light source test method and device thereof |
CN102540107A (en) * | 2010-12-03 | 2012-07-04 | 三星Led株式会社 | Tray, testing apparatus and testing method using the same |
EP2495575B1 (en) * | 2011-03-02 | 2022-04-27 | Feasa Enterprises Limited | Testing LED light sources |
GB2488569A (en) * | 2011-03-02 | 2012-09-05 | Feasa Entpr Ltd | Testing light emitting diode light sources in a climate controlled chamber |
US9267983B2 (en) | 2011-03-02 | 2016-02-23 | Feasa Enterprises Limited | Testing LED light sources |
CN102288389B (en) * | 2011-05-11 | 2016-01-06 | 杭州远方光电信息股份有限公司 | A kind of light source aging test measuring device |
CN102288389A (en) * | 2011-05-11 | 2011-12-21 | 杭州远方光电信息股份有限公司 | Light source aging test measuring device |
CN102590723A (en) * | 2011-09-05 | 2012-07-18 | 工业和信息化部电子第五研究所 | Service life test online monitoring system for kilowatt large-power laser diode array |
CN102707212A (en) * | 2011-10-28 | 2012-10-03 | 杭州浙大三色仪器有限公司 | Device for detecting service life of light emitting diode (LED) in real time |
CN104345025B (en) * | 2013-08-02 | 2017-09-22 | 财团法人工业技术研究院 | Material aging test equipment and test method thereof |
CN104345025A (en) * | 2013-08-02 | 2015-02-11 | 财团法人工业技术研究院 | Material aging test equipment and test method thereof |
CN103940586B (en) * | 2014-04-24 | 2016-08-24 | 工业和信息化部电子第五研究所 | The life detecting method of mid-infrared solid state laser |
CN103940586A (en) * | 2014-04-24 | 2014-07-23 | 工业和信息化部电子第五研究所 | Service life detecting method for intermediate infrared solid laser |
CN104237762A (en) * | 2014-07-23 | 2014-12-24 | 北京光电技术研究所 | Semiconductor laser testing device, system and method |
CN104483100A (en) * | 2014-12-22 | 2015-04-01 | 工业和信息化部电子第五研究所 | Embedded overall control system for laser service life test instrument |
CN104808128A (en) * | 2015-03-31 | 2015-07-29 | 山西南烨立碁光电有限公司 | LED (light emitting diode) service life automatically testing device and method |
CN105258924A (en) * | 2015-11-06 | 2016-01-20 | 苏州耀腾光电有限公司 | Comprehensive tester for LED light |
CN105444995A (en) * | 2015-11-17 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | LED-lamp accelerated-life on-line detection equipment |
CN105444995B (en) * | 2015-11-17 | 2018-06-26 | 中国科学院长春光学精密机械与物理研究所 | A kind of LED lamp accelerated aging online detection instrument |
CN106772129A (en) * | 2016-11-14 | 2017-05-31 | 上海电机学院 | A kind of light fixture monitoring system and method for measuring lamp working time length |
CN116008767A (en) * | 2023-02-10 | 2023-04-25 | 安庆师范大学 | Non-contact characteristic item testing equipment and method for semiconductor photoelectric device |
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