CN104237762A - Semiconductor laser testing device, system and method - Google Patents
Semiconductor laser testing device, system and method Download PDFInfo
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- CN104237762A CN104237762A CN201410354468.0A CN201410354468A CN104237762A CN 104237762 A CN104237762 A CN 104237762A CN 201410354468 A CN201410354468 A CN 201410354468A CN 104237762 A CN104237762 A CN 104237762A
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Abstract
The invention provides a semiconductor laser testing device, system and method. The input voltage, input current, input power and working temperature of a semiconductor laser are measured through a voltage sensor, a current sensor, a power sensor and a temperature sensor respectively. Data collection is conducted on the measured input voltage, the input current, the input power and the working temperature through a data collection circuit to obtain changing curves of the input voltage, the input current, the input power and the working temperature. By the adoption of the mode that multiple parameters of the semiconductor laser are measured to obtain the changing curves of the input voltage, the input current, the input power and the working temperature, so that the stability of the working state of the semiconductor laser can be visually reflected through the changing curves of the input voltage, the input current, the input power and the working temperature, and the accuracy of testing is improved as well.
Description
Technical field
The present invention relates to electronic technology, particularly relate to a kind of semiconductor laser detection device, system and method.
Background technology
Semiconductor laser has the advantages that volume is little, structure is simple, efficiency is high, the life-span is long and be easy to modulation, therefore, often be applied to the military fields such as optical fiber communication, laser guidance, laser weapon, laser radar and laser ranging, and the civil area such as laser medicine, beauty treatment, machining.
Semiconductor laser, especially high-power semiconductor laser, the stability of its duty, directly affects security when being applied to above-mentioned field and result of use.But the stability lacking a kind of effective noise spectra of semiconductor lasers duty in prior art carries out the device tested.
Summary of the invention
The invention provides a kind of semiconductor laser detection device, system and method, the stability for noise spectra of semiconductor lasers duty is tested.
First aspect of the present invention provides a kind of semiconductor laser detection device, comprise: for measuring the voltage sensor of the input voltage of described semiconductor laser, for measuring the current sensor of the input current of described semiconductor laser, for measuring the power sensor of the power input of described semiconductor laser, for measuring the temperature sensor of the working temperature of described semiconductor laser, and for the input voltage recorded in preset time period, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the data acquisition circuit of the change curve of power input and working temperature,
Described data acquisition circuit, is connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
Semiconductor laser detection device as above, described data acquisition circuit, comprising: filtering circuit, amplifying circuit and analog to digital conversion circuit; Described filtering circuit, described amplifying circuit are connected successively with analog-digital conversion circuit as described.
Semiconductor laser detection device as above, described device, also comprises: input/output interface; Described input/output interface, is connected with the analog-digital conversion circuit as described in described data acquisition circuit.
Semiconductor laser detection device as above, described device, also comprise: when receiving reading command from described input/output interface, control elements in indicating described voltage sensor, described current sensor, described power sensor and described temperature sensor to measure described semiconductor laser; Described middle control elements, is connected with described input/output interface, described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
Semiconductor laser detection device as above, described device, also comprises: feed circuit; Described feed circuit, are connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
Second aspect of the present invention provides a kind of semiconductor laser test macro, comprises at least one semiconductor laser detection device as above, display device and bus; At least one semiconductor laser detection device described, is connected with described display device by described bus.
Semiconductor laser detection device as above, described bus is RS-485 data bus or I2C bus.
3rd aspect of the present invention provides a kind of semiconductor laser method of testing, comprising:
Voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of described semiconductor laser, input current, power input and working temperature respectively;
Data acquisition circuit carries out to measuring the described input voltage, described input current, described power input and the described working temperature that obtain the change curve that data acquisition obtains input voltage, input current, power input and working temperature.
Semiconductor laser method of testing as above, described voltage sensor, current sensor, power sensor and temperature sensor also comprise before measuring the input voltage of described semiconductor laser, input current, power input and working temperature respectively:
Middle control elements receives reading command from input/output interface; Described reading command comprises the mark of semiconductor laser;
Described middle control elements controls the described voltage sensor of the semiconductor laser indicated by corresponding described reading command, current sensor, power sensor and temperature sensor and measures;
Then described voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of described semiconductor laser, input current, power input and working temperature respectively, comprising:
Described voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of the semiconductor laser indicated by described reading command, input current, power input and working temperature respectively under the control of described middle control elements.
Semiconductor laser method of testing as above, described data acquisition circuit carries out after data acquisition obtains the change curve of input voltage, input current, power input and working temperature, also comprising to measuring the described input voltage, described input current, described power input and the described working temperature that obtain:
Described data acquisition circuit carries out data processing respectively to the described input voltage collected, described input current, described power input and described working temperature, obtains data processed result; Described data processed result comprises at least one in value, average and mean square deviation;
Data acquisition circuit exports the described input voltage, described input current, described power input and the described working temperature that collect to display, and the described data processed result of correspondence.
Semiconductor laser detection device provided by the invention, system and method, by utilizing voltage sensor, current sensor, the input voltage of semiconductor laser measured respectively by power sensor and temperature sensor, input current, power input and working temperature, then utilize data acquisition circuit to measuring the input voltage obtained, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, because the different kinds of parameters that have employed noise spectra of semiconductor lasers is measured, obtain input voltage, input current, the mode of the change curve of power input and working temperature, can not only according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improve the accuracy of test.
Accompanying drawing explanation
The structural representation of a kind of semiconductor laser detection device 10 that Fig. 1 provides for one embodiment of the invention;
The structural representation of the another kind of semiconductor laser detection device 20 that Fig. 2 provides for one embodiment of the invention;
The structural representation of a kind of semiconductor laser test macro that Fig. 3 provides for another embodiment of the present invention;
The schematic flow sheet of a kind of semiconductor laser method of testing that Fig. 4 provides for further embodiment of this invention.
Embodiment
The structural representation of a kind of semiconductor laser detection device 10 that Fig. 1 provides for one embodiment of the invention, as shown in Figure 1, comprising: voltage sensor 11, current sensor 12, power sensor 13, temperature sensor 14 and data acquisition circuit 15.
Voltage sensor 11, for measuring the input voltage of semiconductor laser.Such as: utilize voltage table parallel way to measure the input voltage of semiconductor laser, obtain the electric signal of indicative input voltage.
Current sensor 12, for measuring the input current of semiconductor laser.Such as: utilize reometer series system to measure the input current of semiconductor laser, obtain the electric signal of indicative input electric current.
Power sensor 13, for measuring the power input of semiconductor laser.Such as: the power input utilizing power meter measures semiconductor laser, the electric signal of indicative input power is obtained.
Temperature sensor 14, for measuring the working temperature of semiconductor laser.Such as: the working temperature utilizing thermosensitive resistance measurement semiconductor laser, the electric signal indicating working temperature is obtained.
Data acquisition circuit 15, be connected with voltage sensor 11, current sensor 12, power sensor 13 and temperature sensor 14 respectively, for carrying out to the input voltage recorded in preset time period, input current, power input and working temperature the change curve that data acquisition obtains input voltage, input current, power input and working temperature.Such as: data acquisition circuit connects aforesaid voltage sensor 11, current sensor 12, power sensor 13 and temperature sensor 14 respectively, receive the electric signal of the electric signal of indicative input voltage, the electric signal of indicative input electric current, the electric signal of indicative input power and instruction working temperature, in preset time period, respectively data acquisition is carried out to these electric signal, obtain the change curve of input voltage, input current, power input and working temperature.The change curve of input voltage, input current, power input and working temperature is used to indicate each parameter of moment and semiconductor laser, i.e. input voltage, input current, corresponding relation between power input and working temperature.
By each parameter of voltage sensor 11, current sensor 12, power sensor 13 and temperature sensor 14 noise spectra of semiconductor lasers, i.e. input voltage, input current, power input and working temperature, measure in real time, then, the input voltage, input current, power input and the working temperature that record in data acquisition circuit 15 pairs of preset time period carry out the change curve that data acquisition obtains input voltage, input current, power input and working temperature.The change curve of this input voltage, input current, power input and working temperature is used to indicate the situation of change of each parameter of semiconductor laser in this preset time period, as change amplitude range and change frequency etc.
In the present embodiment, by utilizing voltage sensor, current sensor, the input voltage of semiconductor laser measured respectively by power sensor and temperature sensor, input current, power input and working temperature, then utilize data acquisition circuit to measuring the input voltage obtained, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, because the different kinds of parameters that have employed noise spectra of semiconductor lasers is measured, obtain input voltage, input current, the mode of the change curve of power input and working temperature, can not only according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improve the accuracy of test.
The structural representation of the another kind of semiconductor laser detection device 20 that Fig. 2 provides for one embodiment of the invention, on the basis of a upper embodiment, data acquisition circuit 15 in the present embodiment as shown in Figure 2, comprises further: filtering circuit 151, amplifying circuit 152 and analog to digital conversion circuit 153.
Filtering circuit 151, amplifying circuit 152 are connected successively with analog to digital conversion circuit 153.
Further, semiconductor laser detection device, also comprises: input/output interface 16 and middle control elements 17.
Input/output interface 16, is connected with described data acquisition circuit 15, for exporting the change curve collecting input voltage, input current, power input and working temperature.Concrete, input/output interface 16 is connected with the analog-digital conversion circuit as described 153 in described data acquisition circuit 15.
Middle control elements 17, be connected with described input/output interface 16, described voltage sensor 11, described current sensor 12, described power sensor 13 and described temperature sensor 14 respectively, for when receiving reading command from input/output interface 16, described voltage sensor 11, described current sensor 12, described power sensor 13 and described temperature sensor 14 is indicated to measure described semiconductor laser.
Further, semiconductor laser detection device, also comprises: feed circuit.
Feed circuit, be connected with described voltage sensor 11, described current sensor 12, described power sensor 13 and described temperature sensor 14 respectively, for powering to voltage sensor 11, described current sensor 12, described power sensor 13 and described temperature sensor 14.
In the present embodiment, by utilizing voltage sensor, current sensor, the input voltage of semiconductor laser measured respectively by power sensor and temperature sensor, input current, power input and working temperature, then utilize data acquisition circuit to measuring the input voltage obtained, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, because the different kinds of parameters that have employed noise spectra of semiconductor lasers is measured, obtain input voltage, input current, the mode of the change curve of power input and working temperature, can not only according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improve the accuracy of test.In addition, because Acquisition Circuit comprises the accuracy that filtering circuit, amplifying circuit and analog to digital conversion circuit improve the change curve of the input voltage, input current, power input and the working temperature that collect further.
The structural representation of a kind of semiconductor laser test macro that Fig. 3 provides for another embodiment of the present invention, as shown in Figure 3, comprises at least one semiconductor laser detection device 20, display device 32 and bus 33 as above in an embodiment.
Wherein, at least one semiconductor laser detection device 20, is connected with described display device 32 by described bus 33.
Further, bus 33 can be RS-485 data bus or internal integrated circuit (Inter-Integrated Circuit, I
2c) bus.
It should be noted that, semiconductor laser test macro can also comprise computing machine, the change curve of the input voltage, input current, power input and the working temperature that collect for noise spectra of semiconductor lasers proving installation 20 is further processed, such as get value, average, mean square deviation, also can store result, and by display device 32 Graphics Processing result, to monitor the stability of semiconductor laser duty.
It should be noted that in addition, bus 33 also can be utilized to send reading command to input/output interface 16, thus at least one semiconductor laser detection device 20 noise spectra of semiconductor lasers in instruction semiconductor laser test macro is tested.
In the present embodiment, by utilizing voltage sensor, current sensor, the input voltage of semiconductor laser measured respectively by power sensor and temperature sensor, input current, power input and working temperature, then utilize data acquisition circuit to measuring the input voltage obtained, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, because the different kinds of parameters that have employed noise spectra of semiconductor lasers is measured, obtain input voltage, input current, the mode of the change curve of power input and working temperature, can not only according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improve the accuracy of test.In addition, because Acquisition Circuit comprises the accuracy that filtering circuit, amplifying circuit and analog to digital conversion circuit improve the change curve of the input voltage, input current, power input and the working temperature that collect further.
The schematic flow sheet of a kind of semiconductor laser method of testing that Fig. 4 provides for further embodiment of this invention, comprises as shown in Figure 4:
401, voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of described semiconductor laser, input current, power input and working temperature respectively.
Further, before 401, middle control elements receives reading command from input/output interface; Middle control elements controls the described voltage sensor of the semiconductor laser indicated by corresponding described reading command, current sensor, power sensor and temperature sensor and measures, and wherein, reading command comprises the mark of semiconductor laser.Then described voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of the semiconductor laser indicated by described reading command, input current, power input and working temperature respectively under the control of described middle control elements.
402, data acquisition circuit carries out to measuring the described input voltage, described input current, described power input and the described working temperature that obtain the change curve that data acquisition obtains input voltage, input current, power input and working temperature.
Optionally, data acquisition circuit carries out filtering, amplification and analog to digital conversion to measuring the described input voltage, described input current, described power input and the described working temperature that obtain, thus collects the change curve of input voltage, input current, power input and working temperature.
Further, after 402, data acquisition circuit carries out data processing respectively to the described input voltage collected, described input current, described power input and described working temperature, obtains data processed result; Described data processed result comprises at least one in value, average and mean square deviation.Then data acquisition circuit exports the described input voltage, described input current, described power input and the described working temperature that collect to display, and the described data processed result of correspondence, shows to utilize display device.
The embodiment of the present invention, by utilizing voltage sensor, current sensor, the input voltage of semiconductor laser measured respectively by power sensor and temperature sensor, input current, power input and working temperature, then utilize data acquisition circuit to measuring the input voltage obtained, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, because the different kinds of parameters that have employed noise spectra of semiconductor lasers is measured, obtain input voltage, input current, the mode of the change curve of power input and working temperature, can not only according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improve the accuracy of test.In addition, because Acquisition Circuit comprises the accuracy that filtering circuit, amplifying circuit and analog to digital conversion circuit improve the change curve of the input voltage, input current, power input and the working temperature that collect further.
One of ordinary skill in the art will appreciate that: all or part of step realizing above-mentioned each embodiment of the method can have been come by the hardware that programmed instruction is relevant.Aforesaid program can be stored in a computer read/write memory medium.This program, when performing, performs the step comprising above-mentioned each embodiment of the method; And aforesaid storage medium comprises: ROM, RAM, magnetic disc or CD etc. various can be program code stored medium.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a semiconductor laser detection device, it is characterized in that, comprise: for measuring the voltage sensor of the input voltage of described semiconductor laser, for measuring the current sensor of the input current of described semiconductor laser, for measuring the power sensor of the power input of described semiconductor laser, for measuring the temperature sensor of the working temperature of described semiconductor laser, and for the input voltage recorded in preset time period, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the data acquisition circuit of the change curve of power input and working temperature,
Described data acquisition circuit, is connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
2. semiconductor laser detection device according to claim 1, is characterized in that, described data acquisition circuit, comprising: filtering circuit, amplifying circuit and analog to digital conversion circuit;
Described filtering circuit, described amplifying circuit are connected successively with analog-digital conversion circuit as described.
3. semiconductor laser detection device according to claim 2, is characterized in that, described device, also comprises: input/output interface;
Described input/output interface, is connected with the analog-digital conversion circuit as described in described data acquisition circuit.
4. semiconductor laser detection device according to claim 3, it is characterized in that, described device, also comprise: when receiving reading command from described input/output interface, control elements in indicating described voltage sensor, described current sensor, described power sensor and described temperature sensor to measure described semiconductor laser;
Described middle control elements, is connected with described input/output interface, described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
5. the semiconductor laser detection device according to any one of claim 1-4, is characterized in that, described device, also comprises: feed circuit;
Described feed circuit, are connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
6. a semiconductor laser test macro, is characterized in that, comprises at least one semiconductor laser detection device, display device and bus according to any one of claim 1-5;
At least one semiconductor laser detection device described, is connected with described display device by described bus.
7. semiconductor laser detection device according to claim 6, is characterized in that, described bus is RS-485 data bus or internal integrated circuit I2C bus.
8. a semiconductor laser method of testing, is characterized in that, comprising:
Voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of described semiconductor laser, input current, power input and working temperature respectively;
Data acquisition circuit carries out to measuring the described input voltage, described input current, described power input and the described working temperature that obtain the change curve that data acquisition obtains input voltage, input current, power input and working temperature.
9. semiconductor laser method of testing according to claim 8, it is characterized in that, described voltage sensor, current sensor, power sensor and temperature sensor also comprise before measuring the input voltage of described semiconductor laser, input current, power input and working temperature respectively:
Middle control elements receives reading command from input/output interface; Described reading command comprises the mark of semiconductor laser;
Described middle control elements controls the described voltage sensor of the semiconductor laser indicated by corresponding described reading command, current sensor, power sensor and temperature sensor and measures;
Then described voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of described semiconductor laser, input current, power input and working temperature respectively, comprising:
Described voltage sensor, current sensor, power sensor and temperature sensor measure the input voltage of the semiconductor laser indicated by described reading command, input current, power input and working temperature respectively under the control of described middle control elements.
10. semiconductor laser method of testing according to claim 8, it is characterized in that, described data acquisition circuit carries out after data acquisition obtains the change curve of input voltage, input current, power input and working temperature, also comprising to measuring the described input voltage, described input current, described power input and the described working temperature that obtain:
Described data acquisition circuit carries out data processing respectively to the described input voltage collected, described input current, described power input and described working temperature, obtains data processed result; Described data processed result comprises at least one in value, average and mean square deviation;
Data acquisition circuit exports the described input voltage, described input current, described power input and the described working temperature that collect to display, and the described data processed result of correspondence.
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Application publication date: 20141224 |