CN204008908U - Semiconductor laser detection device, system - Google Patents

Semiconductor laser detection device, system Download PDF

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Publication number
CN204008908U
CN204008908U CN201420410690.3U CN201420410690U CN204008908U CN 204008908 U CN204008908 U CN 204008908U CN 201420410690 U CN201420410690 U CN 201420410690U CN 204008908 U CN204008908 U CN 204008908U
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Prior art keywords
input
semiconductor laser
sensor
power
current
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CN201420410690.3U
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Inventor
张丽雯
陆耀东
高和平
任奕奕
宋金鹏
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Beijing Jingyi Photoelectric Technology Research Institute Co.,Ltd.
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BEIJING INST OF ELECTRO-OPTICS
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Abstract

The utility model provides a kind of semiconductor laser detection device, system, by utilizing voltage sensor, current sensor, power sensor and temperature sensor are measured respectively the input voltage of semiconductor laser, input current, power input and working temperature, then utilize data acquisition circuit to the input voltage measuring, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, owing to having adopted the different kinds of parameters of noise spectra of semiconductor lasers, measure, obtain input voltage, input current, the mode of the change curve of power input and working temperature, not only can be according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improved the accuracy of test.

Description

Semiconductor laser detection device, system
Technical field
The utility model relates to electronic technology, relates in particular to a kind of semiconductor laser detection device, system.
Background technology
Semiconductor laser has the advantages that volume is little, simple in structure, efficiency is high, the life-span is long and be easy to modulation, therefore, often be applied to the military fields such as optical fiber communication, laser guidance, laser weapon, laser radar and laser ranging, and the civil area such as laser medicine, beauty treatment, machining.
Semiconductor laser, especially high-power semiconductor laser, the stability of its duty, has directly affected security and result of use while being applied to above-mentioned field.But the device that the stability that lacks a kind of effective noise spectra of semiconductor lasers duty in prior art is tested.
Utility model content
The utility model provides a kind of semiconductor laser detection device, system, for the stability of noise spectra of semiconductor lasers duty, tests.
First aspect of the present utility model provides a kind of semiconductor laser detection device, comprise: for measuring the voltage sensor of the input voltage of described semiconductor laser, for measuring the current sensor of the input current of described semiconductor laser, for measuring the power sensor of the power input of described semiconductor laser, for measuring the temperature sensor of the working temperature of described semiconductor laser, and for to the input voltage recording in Preset Time section, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the data acquisition circuit of the change curve of power input and working temperature,
Described data acquisition circuit, is connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
Semiconductor laser detection device as above, described data acquisition circuit, comprising: filtering circuit, amplifying circuit and analog to digital conversion circuit; Described filtering circuit, described amplifying circuit are connected successively with analog-digital conversion circuit as described.
Semiconductor laser detection device as above, described device, also comprises: input/output interface; Described input/output interface, is connected with the analog-digital conversion circuit as described in described data acquisition circuit.
Semiconductor laser detection device as above, described device, also comprise: when receiving reading command from described input/output interface, the middle control elements of indicating described voltage sensor, described current sensor, described power sensor and described temperature sensor to measure described semiconductor laser; Described middle control elements, is connected with described input/output interface, described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
Semiconductor laser detection device as above, described device, also comprises: feed circuit; Described feed circuit, are connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
Second aspect of the present utility model provides a kind of semiconductor laser test macro, comprises at least one semiconductor laser detection device as above, display device and bus; Described at least one semiconductor laser detection device, is connected with described display device by described bus.
Semiconductor laser detection device as above, described bus is RS-485 data bus or I 2c bus.
The semiconductor laser detection device that the utility model provides, system, by utilizing voltage sensor, current sensor, power sensor and temperature sensor are measured respectively the input voltage of semiconductor laser, input current, power input and working temperature, then utilize data acquisition circuit to the input voltage measuring, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, owing to having adopted the different kinds of parameters of noise spectra of semiconductor lasers, measure, obtain input voltage, input current, the mode of the change curve of power input and working temperature, not only can be according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improved the accuracy of test.
Accompanying drawing explanation
The structural representation of a kind of semiconductor laser detection device 10 that Fig. 1 provides for the utility model one embodiment;
The structural representation of the another kind of semiconductor laser detection device 20 that Fig. 2 provides for the utility model one embodiment;
The structural representation of a kind of semiconductor laser test macro that Fig. 3 provides for another embodiment of the utility model.
Embodiment
The structural representation of a kind of semiconductor laser detection device 10 that Fig. 1 provides for the utility model one embodiment, as shown in Figure 1, comprising: voltage sensor 11, current sensor 12, power sensor 13, temperature sensor 14 and data acquisition circuit 15.
Voltage sensor 11, for measuring the input voltage of semiconductor laser.For example: utilize voltage table parallel way to measure the input voltage of semiconductor laser, obtain indicating the electric signal of input voltage.
Current sensor 12, for measuring the input current of semiconductor laser.For example: utilize reometer series system to measure the input current of semiconductor laser, obtain indicating the electric signal of input current.
Power sensor 13, for measuring the power input of semiconductor laser.For example: utilize power meter to measure the power input of semiconductor laser, obtain indicating the electric signal of power input.
Temperature sensor 14, for measuring the working temperature of semiconductor laser.For example: utilize the working temperature of thermosensitive resistance measurement semiconductor laser, obtain indicating the electric signal of working temperature.
Data acquisition circuit 15, be connected with voltage sensor 11, current sensor 12, power sensor 13 and temperature sensor 14 respectively, for the input voltage recording in Preset Time section, input current, power input and working temperature are carried out to the change curve that data acquisition obtains input voltage, input current, power input and working temperature.For example: data acquisition circuit connects respectively aforesaid voltage sensor 11, current sensor 12, power sensor 13 and temperature sensor 14, receive the electric signal of indication input voltage, the electric signal of the electric signal of indication input current, indication power input and the electric signal of indication working temperature, in Preset Time section, these electric signal are carried out respectively to data acquisition, obtain the change curve of input voltage, input current, power input and working temperature.The change curve of input voltage, input current, power input and working temperature is used to indicate constantly each parameter with semiconductor laser, i.e. corresponding relation between input voltage, input current, power input and working temperature.
By each parameter of voltage sensor 11, current sensor 12, power sensor 13 and temperature sensor 14 noise spectra of semiconductor lasers, be input voltage, input current, power input and working temperature, measure in real time, then, the input voltage, input current, power input and the working temperature that in 15 pairs of Preset Time sections of data acquisition circuit, record are carried out the change curve that data acquisition obtains input voltage, input current, power input and working temperature.The change curve of this input voltage, input current, power input and working temperature is used to indicate the situation of change of each parameter of semiconductor laser in this Preset Time section, as changed amplitude range and change frequency etc.
In the present embodiment, by utilizing voltage sensor, current sensor, power sensor and temperature sensor are measured respectively the input voltage of semiconductor laser, input current, power input and working temperature, then utilize data acquisition circuit to the input voltage measuring, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, owing to having adopted the different kinds of parameters of noise spectra of semiconductor lasers, measure, obtain input voltage, input current, the mode of the change curve of power input and working temperature, not only can be according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improved the accuracy of test.
The structural representation of the another kind of semiconductor laser detection device 20 that Fig. 2 provides for the utility model one embodiment, on the basis of a upper embodiment, data acquisition circuit 15 in the present embodiment as shown in Figure 2, further comprises: filtering circuit 151, amplifying circuit 152 and analog to digital conversion circuit 153.
Filtering circuit 151, amplifying circuit 152 and analog to digital conversion circuit 153 are connected successively.
Further, semiconductor laser detection device, also comprises: input/output interface 16 and middle control elements 17.
Input/output interface 16, is connected with described data acquisition circuit 15, for exporting the change curve that collects input voltage, input current, power input and working temperature.Concrete, input/output interface 16 is connected with the analog-digital conversion circuit as described 153 in described data acquisition circuit 15.
Middle control elements 17, be connected with described input/output interface 16, described voltage sensor 11, described current sensor 12, described power sensor 13 and described temperature sensor 14 respectively, for when receiving reading command from input/output interface 16, indicate described voltage sensor 11, described current sensor 12, described power sensor 13 and 14 pairs of described semiconductor lasers of described temperature sensor to measure.
Further, semiconductor laser detection device, also comprises: feed circuit.
Feed circuit, be connected with described voltage sensor 11, described current sensor 12, described power sensor 13 and described temperature sensor 14 respectively, for voltage sensor 11, described current sensor 12, described power sensor 13 and described temperature sensor 14 are powered.
In the present embodiment, by utilizing voltage sensor, current sensor, power sensor and temperature sensor are measured respectively the input voltage of semiconductor laser, input current, power input and working temperature, then utilize data acquisition circuit to the input voltage measuring, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, owing to having adopted the different kinds of parameters of noise spectra of semiconductor lasers, measure, obtain input voltage, input current, the mode of the change curve of power input and working temperature, not only can be according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improved the accuracy of test.In addition, because further comprising filtering circuit, amplifying circuit and analog to digital conversion circuit, Acquisition Circuit improved the accuracy of the change curve of the input voltage, input current, power input and the working temperature that collect.
The structural representation of a kind of semiconductor laser test macro that Fig. 3 provides for another embodiment of the utility model, as shown in Figure 3, comprises at least one as above semiconductor laser detection device 20, display device 32 and bus 33 in an embodiment.
Wherein, at least one semiconductor laser detection device 20, is connected with described display device 32 by described bus 33.
Further, bus 33 can be RS-485 data bus or internal integrated circuit (Inter-Integrated Circuit, I 2c) bus.
It should be noted that, semiconductor laser test macro can also comprise computing machine, the change curve of input voltage, input current, power input and the working temperature collecting for noise spectra of semiconductor lasers proving installation 20 is further processed, for example get value, average, mean square deviation, also can store result, and by display device 32 Graphics Processing results, so that the stability of monitoring semiconductor laser duty.
It should be noted that in addition, also can utilize bus 33 to send reading command to input/output interface 16, thereby at least one semiconductor laser detection device 20 noise spectra of semiconductor lasers in indication semiconductor laser test macro are tested.
In the present embodiment, by utilizing voltage sensor, current sensor, power sensor and temperature sensor are measured respectively the input voltage of semiconductor laser, input current, power input and working temperature, then utilize data acquisition circuit to the input voltage measuring, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the change curve of power input and working temperature, owing to having adopted the different kinds of parameters of noise spectra of semiconductor lasers, measure, obtain input voltage, input current, the mode of the change curve of power input and working temperature, not only can be according to input voltage, input current, the change curve of power input and working temperature intuitively reflects the stability of semiconductor laser duty, and improved the accuracy of test.In addition, because further comprising filtering circuit, amplifying circuit and analog to digital conversion circuit, Acquisition Circuit improved the accuracy of the change curve of the input voltage, input current, power input and the working temperature that collect.
One of ordinary skill in the art will appreciate that: all or part of step that realizes above-mentioned each embodiment of the method can complete by the relevant hardware of programmed instruction.Aforesaid program can be stored in a computer read/write memory medium.This program, when carrying out, is carried out the step that comprises above-mentioned each embodiment of the method; And aforesaid storage medium comprises: various media that can be program code stored such as ROM, RAM, magnetic disc or CDs.
Finally it should be noted that: each embodiment, only in order to the technical solution of the utility model to be described, is not intended to limit above; Although the utility model is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the scope of each embodiment technical scheme of the utility model.

Claims (7)

1. a semiconductor laser detection device, it is characterized in that, comprise: for measuring the voltage sensor of the input voltage of described semiconductor laser, for measuring the current sensor of the input current of described semiconductor laser, for measuring the power sensor of the power input of described semiconductor laser, for measuring the temperature sensor of the working temperature of described semiconductor laser, and for to the input voltage recording in Preset Time section, input current, power input and working temperature are carried out data acquisition and are obtained input voltage, input current, the data acquisition circuit of the change curve of power input and working temperature,
Described data acquisition circuit, is connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
2. semiconductor laser detection device according to claim 1, is characterized in that, described data acquisition circuit, comprising: filtering circuit, amplifying circuit and analog to digital conversion circuit;
Described filtering circuit, described amplifying circuit are connected successively with analog-digital conversion circuit as described.
3. semiconductor laser detection device according to claim 2, is characterized in that, described device, also comprises: input/output interface;
Described input/output interface, is connected with the analog-digital conversion circuit as described in described data acquisition circuit.
4. semiconductor laser detection device according to claim 3, it is characterized in that, described device, also comprise: when receiving reading command from described input/output interface, the middle control elements of indicating described voltage sensor, described current sensor, described power sensor and described temperature sensor to measure described semiconductor laser;
Described middle control elements, is connected with described input/output interface, described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
5. according to the semiconductor laser detection device described in claim 1-4 any one, it is characterized in that, described device, also comprises: feed circuit;
Described feed circuit, are connected with described voltage sensor, described current sensor, described power sensor and described temperature sensor respectively.
6. a semiconductor laser test macro, is characterized in that, comprises at least one semiconductor laser detection device, display device and bus as described in any one in claim 1-5;
Described at least one semiconductor laser detection device, is connected with described display device by described bus.
7. semiconductor laser test macro according to claim 6, is characterized in that, described bus is RS-485 data bus or internal integrated circuit I 2c bus.
CN201420410690.3U 2014-07-23 2014-07-23 Semiconductor laser detection device, system Active CN204008908U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420410690.3U CN204008908U (en) 2014-07-23 2014-07-23 Semiconductor laser detection device, system

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Application Number Priority Date Filing Date Title
CN201420410690.3U CN204008908U (en) 2014-07-23 2014-07-23 Semiconductor laser detection device, system

Publications (1)

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CN204008908U true CN204008908U (en) 2014-12-10

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104237762A (en) * 2014-07-23 2014-12-24 北京光电技术研究所 Semiconductor laser testing device, system and method
CN104914373A (en) * 2015-06-15 2015-09-16 工业和信息化部电子第五研究所 SLD device reliability evaluation method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104237762A (en) * 2014-07-23 2014-12-24 北京光电技术研究所 Semiconductor laser testing device, system and method
CN104914373A (en) * 2015-06-15 2015-09-16 工业和信息化部电子第五研究所 SLD device reliability evaluation method
CN104914373B (en) * 2015-06-15 2017-10-20 工业和信息化部电子第五研究所 SLD device reliability appraisal procedures

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Address after: 100010 Beijing city Dongcheng District North Street No. 20

Patentee after: Beijing Jingyi Photoelectric Technology Research Institute Co.,Ltd.

Address before: 100010 Beijing city Dongcheng District North Street No. 20

Patentee before: Beijing Institute of Opto-Electronic Technology