CN201001211Y - High-frequency coil capable of meanwhile producing two silicon cores or other crystal materials - Google Patents
High-frequency coil capable of meanwhile producing two silicon cores or other crystal materials Download PDFInfo
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- CN201001211Y CN201001211Y CNU200720089224XU CN200720089224U CN201001211Y CN 201001211 Y CN201001211 Y CN 201001211Y CN U200720089224X U CNU200720089224X U CN U200720089224XU CN 200720089224 U CN200720089224 U CN 200720089224U CN 201001211 Y CN201001211 Y CN 201001211Y
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- Prior art keywords
- high frequency
- frequency coil
- endoporus
- produce
- crystalline material
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000013078 crystal Substances 0.000 title abstract description 9
- 239000000463 material Substances 0.000 title abstract description 5
- 239000000498 cooling water Substances 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- 239000002178 crystalline material Substances 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 17
- 239000002994 raw material Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000446 fuel Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000004927 fusion Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000019771 cognition Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Abstract
A high frequency coil which can simultaneously produce two silicon cores or other crystal material relates to a high frequency coil technical field. A high frequency coil upper surface (9) with an inclined plane is arranged on the upper part of the high frequency coil (3), a trapezoidal high frequency coil lower surface (10) is arranged on the lower part thereof, two inner holes (8) are arranged in the middle of the high frequency coil (3), two inner holes (8) is connected in series through an inner hole connecting seam (11) in run-through way; a cooling water channel (4) is surrounded the high frequency coil (3), and respectively and fixedly connected with two current conveyance and cooling water conveyance copper tubes (12) on the two sides at the inclined opening (13) of the high frequency coil (3), and the trapezoidal high frequency coil lower surface (10) arranged on the lower part of the high frequency coil (3) can consist of a plurality of steps, the high frequency coil upper surface (9) arranged on the upper part of the high frequency coil (3) can form a downward slope from outside to inside.
Description
Technical field:
The utility model relates to the high frequency coil technical field, the especially a kind of high frequency coil that can produce two silicon cores or other crystalline material simultaneously.
Background technology:
At present, in the technical process that the molten mode in silicon core, monocrystalline silicon and other material crystals district is produced, what use mostly is a kind of monocular high frequency coil, its operation principle is as follows: feed high-frequency current to high frequency coil during work, produce the magnetic line of force fuel rod is carried out induction heating, make the fuel rod upper end form the fusion zone, then with the brilliant fusion zone of inserting of son, slowly promote young brilliant, raw material after the fusing will be followed young brilliant the rising, form a new column type crystal, this new column type crystal is the manufactured goods of silicon core or other material crystals.Yet the shortcoming of this high frequency coil is once to draw a silicon core or other material crystals, and efficient is too low, causes a large amount of wastes of the manpower and the energy.Though this high frequency coil also can make it can once draw many silicon cores or other crystal by strengthening endoporus, need several times ground to increase power, can cause bigger waste to the energy, thereby this method is extremely worthless.
Summary of the invention:
The utility model is in order to overcome the above-mentioned deficiency of existing high frequency coil, and the purpose of this utility model provides a kind of high frequency coil that can produce two silicon cores or other crystalline material simultaneously.This high frequency coil that can produce two silicon cores or other crystalline material simultaneously not only can be increased work efficiency widely, and has advantages such as homogeneous heating, energy savings, increase output.
In order to realize the purpose of foregoing invention, the utility model adopts following technical scheme;
A kind of high frequency coil that can produce two silicon cores or other crystalline material simultaneously, high frequency coil top is provided with above the high frequency coil on band inclined-plane, the bottom is provided with below the trapezoidal high frequency coil, is provided with two endoporus at the middle part of high frequency coil, and two endoporus connect seam by endoporus and connect series connection; Cooling water channel is around high frequency coil, and carries with two electric currents respectively in the both sides at the diagonal cut joint place of high frequency coil and cooling water carries copper pipe to fixedly connected.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, can be made up of a plurality of ladders below the trapezoidal high frequency coil that its high frequency coil bottom is provided with.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, can form a slope from outside to inside above the high frequency coil that its high frequency coil top is provided with.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, and its cooling water channel can directly be slotted on high frequency coil, imbeds copper pipe then and is fixed by solder bonding metal.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, and its cooling water channel can directly be slotted on high frequency coil, utilizes copper sheet to cover then and is fixed by the metal solder slit.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, and its diagonal cut joint is connected seam and directly forward is used to logical two endoporus with endoporus.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, and two endoporus is forward arranged by diagonal cut joint.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, and two endoporus that its high frequency coil middle part is provided with can be designed to circular inner hole, square inner bore, rectangle endoporus, triangle endoporus, polygon endoporus, irregular polygon endoporus, rhombus endoporus, trapezoidal endoporus, Long Circle endoporus and oval endoporus.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, can use the design of band angle when its endoporus shaped design is the band angle.
This can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, and the method for rounding of angle realized in its endoporus can use when being designed to the angle equally.
Owing to adopt technique scheme, the utlity model has following superiority;
The utility model is owing to adopt the high frequency coil technology of two holes discharging simultaneously, once can draw two silicon cores or other crystalline material simultaneously, its endoporus connects seam can make high-frequency current form the loop between two endoporus, high-frequency current is evenly distributed on high frequency coil, use this high frequency coil to enhance productivity greatly, improve capacity usage ratio, reduce production costs, increase output and have advantages such as homogeneous heating, a large amount of energy savings, minimizing equipment investment and artificial comprehensive cost can effectively reduce, be easy in the promotion and implementation of polysilicon industry.
Description of drawings:
Fig. 1 is the planar structure schematic diagram of high frequency coil.
Fig. 2 is the A-A view of Fig. 1.
Fig. 3 is the operation principle schematic diagram of high frequency coil.
Fig. 4 be the electric current of high frequency coil in the workflow of high frequency coil to principle schematic
Fig. 5 is the circular inner hole schematic diagram of high frequency coil.
Fig. 6 is the square inner bore schematic diagram of high frequency coil.
Fig. 7 is the square interior rounding of angle endoporus schematic diagram of high frequency coil.
Fig. 8 is the rectangle endoporus schematic diagram of high frequency coil.
Fig. 9 is the interior rounding of angle endoporus schematic diagram of the rectangle of high frequency coil.
Figure 10 is the triangle endoporus schematic diagram of high frequency coil.
Figure 11 is the interior rounding of angle endoporus schematic diagram of the triangle of high frequency coil.
Figure 12 is the polygon endoporus schematic diagram of high frequency coil.
Figure 13 is the irregular limit shape endoporus schematic diagram of high frequency coil.
Figure 14 is the rhombus endoporus schematic diagram of high frequency coil.
Figure 15 is the interior rounding of angle endoporus schematic diagram of the rhombus of high frequency coil.
Figure 16 is the trapezoidal endoporus schematic diagram of high frequency coil.
Figure 17 is the trapezoidal interior rounding of angle endoporus schematic diagram of high frequency coil.
Figure 18 is the Long Circle endoporus schematic diagram of high frequency coil.
Figure 19 is the oval endoporus schematic diagram of high frequency coil.
In the drawings; 1, the raw material silicon rod, 2, the magnetic line of force, 3, high frequency coil, 4, cooling water channel, 5, the silicon core, 6, young brilliant, 7, young brilliant chuck, 8, endoporus, 9, above the high frequency coil, 10, below the high frequency coil, 11, endoporus connects seam, 12, electric current is carried and cooling water is carried copper pipe, 13, diagonal cut joint, 14, circular inner hole, 15, square inner bore, 16, rounding of angle endoporus in square, 17, the rectangle endoporus, 18, rounding of angle endoporus in the rectangle, 19, the triangle endoporus, 20, rounding of angle endoporus in the triangle, 21, the polygon endoporus, 22, irregular limit shape endoporus, 23, the rhombus endoporus, 24, rounding of angle endoporus in the rhombus, 25, trapezoidal endoporus, 26, rounding of angle endoporus in trapezoidal, 27, the Long Circle endoporus, 28, oval endoporus.
Embodiment;
With reference to the following examples, can explain the utility model in more detail; But the utility model is not limited to these embodiment.
In Fig. 1,2, high frequency coil (3) top is provided with above the high frequency coil of being with the inclined-plane (9), the bottom is provided with (10) below the trapezoidal high frequency coil, is provided with two endoporus (8) at the middle part of high frequency coil (3), and two endoporus (8) connect seam (11) by endoporus and connect series connection; Cooling water channel (4) is around high frequency coil (3), and carry with two electric currents respectively in both sides that the diagonal cut joint (13) of high frequency coil (3) is located and cooling water carries copper pipe (12) to fixedly connected, (10) can be made up of a plurality of ladders below the trapezoidal high frequency coil that high frequency coil (3) bottom is provided with, and (9) can form a slope from outside to inside on the high frequency coil that high frequency coil (3) top is provided with; Cooling water channel (4) can directly be gone up fluting at high frequency coil (3), imbedding copper pipe is then fixed by solder bonding metal again, its cooling water channel (4) also can directly be gone up fluting at high frequency coil (3), utilize copper sheet to cover then and fix by solder bonding metal, diagonal cut joint (13) is connected seam (11) and directly forward is used to logical two endoporus (8) with endoporus, two endoporus (8) are forward arranged by diagonal cut joint.
In Fig. 3,4, this can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, and its operation principle and using method thereof are; Earlier raw material silicon rod (1) is delivered to high frequency coil (3) bottom, raw material silicon rod (1) is near more good more apart from high frequency coil (3), but must not contact with high frequency coil (3), electric current on high frequency coil (3) is carried and cooling water carries copper pipe (12) energising to send water and another root electric current to carry and cooling water is carried copper pipe (12) energising draining then, impel high frequency coil (3) to produce the powerful magnetic line of force (2), make raw material silicon rod (1) upper end utilize the magnetic line of force to carry out induction heating near the part of coil, the cooling water that flows through in the cooling water channel (4) is given high frequency coil (3) cooling, diagonal cut joint (13) is connected seam (11) and directly forward is used to logical two endoporus (8) with endoporus, its endoporus connects seam (11) can make high-frequency current form the loop between two endoporus (8), its major function is to distribute for high-frequency current is gone up evenly at high frequency coil (3), makes raw material silicon rod (1) thermally equivalent; After melt at the position of (10) below the close high frequency coil in the termination of raw material silicon rod (1), young brilliant chuck (7) is being with young brilliant (6) to descend, the fusion zone that makes young brilliant (6) insert fuel rod (1) by two endoporus (8) back, promote young brilliant (6) then, the melt cognition on fuel rod (1) top is followed young brilliant (6) and is risen, also corresponding the following synchronously of the lower shaft of its fuel rod (1) bottom slowly risen, but its fuel rod (1) must not contact with high frequency coil (3); Because the end of raw material silicon rod (1) may be not too smooth, so, (10) are designed to stepped below the high frequency coil, its role is to make as much as possible the many bottom surfaces (10) of raw material silicon rod (1) near high frequency coil, the slope from outside to inside of its (9) design above high frequency coil, its effect is can reduce high-frequency current too the concentrating of middle part, and it is evenly distributed, with the effect that realizes being heated evenly at high frequency coil (3); The fusion zone on raw material silicon rod (1) top is in the sticking and drive of young brilliant (6) and by behind high frequency coil (3) endoporus (8), because weakening and condensation of the magnetic line of force (2), just form new column type crystal, its young brilliant chuck (7) is carried young brilliant (6) secretly and is slowly risen, and just can form the finished silicon core (5) of Len req.
In Fig. 5,6,7,8,9,10,11,12,13,14,15,16,17,18,19, this can produce the high frequency coil of two silicon cores or other crystalline material simultaneously, two endoporus (8) that its high frequency coil (3) middle part is provided with can be designed the endoporus (8) of different size, model and moulding, and its scope of design roughly has following kind; Rounding of angle endoporus (18), triangle endoporus (19), the interior rounding of angle endoporus (20) of triangle, polygon endoporus (21), irregular limit shape endoporus (22), rhombus endoporus (23), the interior rounding of angle endoporus (24) of rhombus, trapezoidal endoporus (25), trapezoidal interior rounding of angle endoporus (26), Long Circle endoporus (27) and oval endoporus (28) in circular inner hole (14), square inner bore (15), square interior rounding of angle endoporus (16), rectangle endoporus (17), the rectangle; But it is to be noted that different shape is Protean, so do not enumerate one by one at this.
When its endoporus (8) shaped design is the band angle (as; Triangle or the like) can use the design of being with the wedge angle angle, the method for rounding of angle realized in endoporus (8) can use when being designed to the angle equally, i.e. arc angle.
The embodiment that selects for use in this article for open the purpose of this utility model currently thinks to suit, but will be appreciated that, the utility model is intended to comprise that all belong to all changes and the improvement of the interior embodiment of this design and the utility model scope.
Claims (10)
1, a kind of high frequency coil that can produce two silicon cores or other crystalline material simultaneously, it is characterized in that: high frequency coil (3) top is provided with above the high frequency coil of being with the inclined-plane (9), the bottom is provided with (10) below the trapezoidal high frequency coil, be provided with two endoporus (8) at the middle part of high frequency coil (3), two endoporus (8) connect seam (11) by endoporus and connect series connection; Cooling water channel (4) is around high frequency coil (3), and carries with two electric currents respectively in the both sides that the diagonal cut joint (13) of high frequency coil (3) is located and cooling water carries copper pipe (12) to fixedly connected.
2, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 1 is characterized in that: (10) can be made up of a plurality of ladders below the trapezoidal high frequency coil that its high frequency coil (3) bottom is provided with.
3, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 1 is characterized in that: (10) can form a slope from outside to inside above the high frequency coil that its high frequency coil (3) top is provided with.
4, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 1 is characterized in that: its cooling water channel (4) can directly be gone up at high frequency coil (3) and beat groove, imbeds copper pipe then and is fixed by solder bonding metal.
5, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 1 is characterized in that: its cooling water channel (4) can be directly gone up at high frequency coil (3) beat groove, utilizes the copper sheet covering then and is fixed by solder bonding metal.
6, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 1 is characterized in that: its diagonal cut joint (13) is connected seam (11) and directly forward is used to logical two endoporus (8) with endoporus.
7, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 1, it is characterized in that: two endoporus (8) is forward arranged by diagonal cut joint (13)
8, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 1 is characterized in that: three endoporus (8) that its high frequency coil (3) middle part is provided with can be designed to circular inner hole (14), square inner bore (15), rectangle endoporus (17), triangle endoporus (19), polygon endoporus (21), irregular limit shape endoporus (22), rhombus endoporus (23), trapezoidal endoporus (25), Long Circle endoporus (27) and oval endoporus (28).
9, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 8 is characterized in that: can use the design of band angle when its endoporus (8) shaped design is the band angle.
10, the high frequency coil that can produce two silicon cores or other crystalline material simultaneously as claimed in claim 8, it is characterized in that: its endoporus (8) can use interior rounding of angle equally when being designed to be with the angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720089224XU CN201001211Y (en) | 2007-01-19 | 2007-01-19 | High-frequency coil capable of meanwhile producing two silicon cores or other crystal materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720089224XU CN201001211Y (en) | 2007-01-19 | 2007-01-19 | High-frequency coil capable of meanwhile producing two silicon cores or other crystal materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201001211Y true CN201001211Y (en) | 2008-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200720089224XU Expired - Fee Related CN201001211Y (en) | 2007-01-19 | 2007-01-19 | High-frequency coil capable of meanwhile producing two silicon cores or other crystal materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201001211Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010060349A1 (en) * | 2008-11-25 | 2010-06-03 | Liu Chaoxuan | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
-
2007
- 2007-01-19 CN CNU200720089224XU patent/CN201001211Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010060349A1 (en) * | 2008-11-25 | 2010-06-03 | Liu Chaoxuan | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090109 Address after: Luoyang, Henan hi tech Development Zone, Tianjin South Road, opposite the agricultural college, West, post code: 471009 Patentee after: Luoyang Jinnuo Mechanical Engineering Co., Ltd. Address before: Henan Province, Luoyang Xigong Road No. 1, single floor, zip code: 471009 Patentee before: Liu Chaoxuan |
|
| ASS | Succession or assignment of patent right |
Owner name: LUOYANG JINNUO MACHINE ENGINEERING CO., LTD. Free format text: FORMER OWNER: LIU ZHAOXUAN Effective date: 20090109 |
|
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 471009 No. 2 Jin Xin Road, Luoyang national hi tech Industrial Development Zone, Henan, China Patentee after: Luoyang Jinnuo Mechanical Engineering Co., Ltd. Address before: 471009, Henan, Luoyang hi tech Development Zone, Tianjin South Road, opposite the agricultural West Patentee before: Luoyang Jinnuo Mechanical Engineering Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080102 Termination date: 20140119 |