CN200956368Y - 半导体功率器件的贴装式封装外壳 - Google Patents

半导体功率器件的贴装式封装外壳 Download PDF

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CN200956368Y
CN200956368Y CNU2006200737964U CN200620073796U CN200956368Y CN 200956368 Y CN200956368 Y CN 200956368Y CN U2006200737964 U CNU2006200737964 U CN U2006200737964U CN 200620073796 U CN200620073796 U CN 200620073796U CN 200956368 Y CN200956368 Y CN 200956368Y
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metal
welded
semiconductor power
ceramic frame
support body
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鲁天翔
吴正中
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Wuxi Tianhe Electronic Co Ltd
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Wuxi Tianhe Electronic Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

半导体功率器件的贴装式封装外壳，在陶瓷框架体的底部分别焊接连接装配器件管芯的金属底板以及金属外引线片，在陶瓷框架体台阶面上熔结有焊接内引线的电极层，所述电极层与所述金属底板及金属外引线之间导电连接，由此构成底壳；陶瓷框架体的顶端借助焊框密封焊接金属盖板。本实用新型的底板及上盖都为金属板，其金属陶瓷结构型贴装式封装外壳比起已有的全塑封型贴装式封装外壳，散热性能显著变优，由其封装的半导体功率器件的耗散功率显著提高。

Description

半导体功率器件的贴装式封装外壳
(一)、技术领域：本实用新型涉及半导体器件领域，尤其涉及半导体功率器件的封装外壳。
(二)、背景技术：电子设备的小型化，要求电子元件器件以贴装形式焊接于印刷电路板上，半导体功率器件也不例外。传统的金属管壳封装型半导体功率器件因为其体积大，不能满足贴装要求。现有技术中有以TO-252型贴装式塑料外壳为典型代表的塑料封装型半导体功率器件，器件的芯片封装于密封封合的扁平形状的全塑料底壳以及全塑料上盖中，从塑料底壳旁侧引出金属外引线脚。这种全塑壳型封装结构体积小，可以满足贴装要求，尽管为了改善散热性能，可以在塑料底壳外面贴装有散热金属片，但由于器件的芯片封装于全塑壳中，散热性能仍然差，因此这种全塑壳型封装的半导体功率器件耗散功率较低。
(三)、发明内容：针对全塑料封装结构散热性能差，用于贴装时耗散功率较低的技术缺点，申请人进行了研究改进，设计及提供另一种半导体功率器件的贴装式封装外壳，其用于贴装时，器件的耗散功率能有效提高。
本实用新型的技术方案如下：
其包括密封封接的底壳及上盖板，从底壳的旁侧引出外引线脚，改进要点在于：在陶瓷框架体的底部分别焊接连接装配器件管芯的金属底板以及金属外引线片，在陶瓷框架体顶端焊接连接焊框架，在陶瓷框架体台阶面上熔结有焊接内引线的电极层，所述电极层与所述金属底板及金属外引线之间导电连接，由此构成底壳；陶瓷框架体的顶端密封焊接连接金属盖板。
本实用新型的底壳由陶瓷框架及金属散热底板焊接连接构成，半导体功率器件的管芯烧结于金属散热底板上，而且本实用新型的密封上盖也为金属板，如此金属陶瓷结构型贴装式封装外壳比起已有的全塑封型贴装式封装外壳，散热性能显著变优，由其封装的半导体功率器件的耗散功率显著提高。
(四)、附图说明：
图1为本实用新型的底壳的俯视图；
图2为本实用新型的底壳的仰视图；
图3为本实用新型的剖视图，按图1中A-A方向剖示；
图4为本实用新型底壳的应用状态俯视图；
图5为本实用新型应用状态的剖视图，按图1中A-A方向剖示。
(五)、具体实施方式：
见图1、图3，氧化铝陶瓷框架体2具有台阶面，陶瓷框架体2内部有分别与所述台阶面、底板3以及外引线片1相通的孔道7，可以在制作陶瓷框架体2的泥胚时加工出孔道7，然后烧结成型。在陶瓷框架体2的所述台阶面上按图1所示阴影区6涂覆导电浆，经加热烧结，导电浆熔结及还原为焊接内引线的电极层；在烧结过程中，导电浆熔融渗透以及充满孔道7，孔道7中的导电浆熔结及还原为金属化通道。所述阴影区6涂覆的导电浆可以用市售商品导电浆，例如钨钼导电浆，陶瓷框架体2以及所述导电浆的烧结可以按已有技术中的常规工艺同时进行，例如1600℃，烧结4小时。
见图2、图3，在陶瓷框架体2的底部分别焊接连接用于装配半导体功率器件管芯的钼铜或可伐金属材质的底板3以及可伐金属材质的左、右外引线片1，在陶瓷框架体的顶端焊接连接可伐材质的焊框架5，如此制成本实用新型的底壳。上述焊接的焊料可采用已有技术焊料，例如市售银铜焊料，按其常规工艺烧结焊接。见图1，图3，在上述烧结焊接过程中，金属底板3以及左、右外引线片1分别与前述框架体2的孔道7中的金属化通道熔结连接，由此实现内引线电极层分别与金属底板3以及左、右金属外引线片1的导电连接，图1中左下方阴影区为与底板3导电连接的电极层。上述选用的钼铜或可伐金属材质，其与氧化铝陶瓷框架体2有较好的热膨胀匹配系数。
以下说明本实用新型的应用。见图4、图5，在金属底板3上用常规焊料及按常规工艺烧结半导体功率器件的管芯9，管芯9的引出电极与底壳的各内引线电极层6之间键合导电内引线8(例如硅铝丝)，如图4所示。由图4可见，金属底板3不但起散热作用，而且作为外引出电极。然后用封口焊接机将可伐金属上盖板4与可伐材质焊框架5密封焊接，如图5所示，如此完成对半导体功率器件的封装。

Claims (3)

1、半导体功率器件的贴装式封装外壳，包括密封封接的底壳及上盖板，从底壳的旁侧引出外引线脚，特征在于：在陶瓷框架体的底部分别焊接连接装配器件管芯的金属底板以及金属外引线片，在陶瓷框架体顶端焊接连接焊框架，在陶瓷框架体台阶面上熔结有焊接内引线的电极层，所述电极层与所述金属底板及金属外引线之间导电连接，由此构成底壳；陶瓷框架体的顶端密封焊接连接金属盖板。
2、按权利要求1所述半导体功率器件的贴装式封装外壳，其特征在于所述内引线的电极层与所述金属底板及金属外引线之间分别借助金属化通道实现导电连接。
3、按权利要求1所述半导体功率器件的贴装式封装外壳，其特征在于在陶瓷框架体的顶端焊接连接焊框，所述焊框与金属盖板焊接连接。
CNU2006200737964U 2006-06-16 2006-06-16 半导体功率器件的贴装式封装外壳 Expired - Fee Related CN200956368Y (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9064737B2 (en) 2007-11-13 2015-06-23 Siemens Aktiengesellschaft Power semiconductor module
CN111952252A (zh) * 2020-07-15 2020-11-17 青岛凯瑞电子有限公司 一种表贴型陶瓷金属外壳的低电阻高载流引线结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9064737B2 (en) 2007-11-13 2015-06-23 Siemens Aktiengesellschaft Power semiconductor module
CN111952252A (zh) * 2020-07-15 2020-11-17 青岛凯瑞电子有限公司 一种表贴型陶瓷金属外壳的低电阻高载流引线结构
CN111952252B (zh) * 2020-07-15 2023-03-10 青岛凯瑞电子有限公司 一种表贴型陶瓷金属外壳的低电阻高载流引线结构

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