CN1990915A - Seed crystal method of solidifying orientation origination end and application thereof - Google Patents
Seed crystal method of solidifying orientation origination end and application thereof Download PDFInfo
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- CN1990915A CN1990915A CN 200510136715 CN200510136715A CN1990915A CN 1990915 A CN1990915 A CN 1990915A CN 200510136715 CN200510136715 CN 200510136715 CN 200510136715 A CN200510136715 A CN 200510136715A CN 1990915 A CN1990915 A CN 1990915A
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- 239000013078 crystal Substances 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000006911 nucleation Effects 0.000 claims abstract description 18
- 238000010899 nucleation Methods 0.000 claims abstract description 18
- 238000005266 casting Methods 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 238000002474 experimental method Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000007711 solidification Methods 0.000 abstract description 4
- 230000008023 solidification Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000004927 fusion Effects 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 description 12
- 229910000601 superalloy Inorganic materials 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
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Abstract
The invention relates to the technology of directionally solidification for single crystal, which in detail is initial structure for directionally solidification with seed crystal method. It possesses the basic structure of normal spiral selective crystal shell, comprising cylindrical nucleation in lower part, spiral crystal selecting device connected with the top of nucleation machine, the upper side of crystal selecting device is connected with single crystal bar or mold cavity of single crystal casting, the dismeter of cylindrical nucleation section is 1.5-2.5 times of that of spiral crystal selecting machine, and the height of seed crystal is 0.5-0.8 times of that of nucleation section. The invention chooses seed crystal with rational size and structural proportion to make it easy to control the fusion on the upper side of seed crystal, and then rezlizes crystal growth taking seed crystal as nucleus, and the spiral construction of crystal selection machine can inhibit the foreign crystal growth on the edge of seed crystal.
Description
Technical field
The present invention relates to the directional solidification technique of monocrystalline, specifically a kind of can improve the single crystal growing success ratio, have seed crystal structure of initiating terminal in directional solidification in method and the application thereof of selecting crystal formation shell feature, be particularly useful for falling crucible method produce non-[001] orientation single crystal high-temperature alloy material or part.
Background technology
The notable attribute of single crystal super alloy has anisotropy exactly.Crystal separation method based on the preferential growth principle can only prepare the monocrystalline that [001] is orientated, for the performance that fullys understand single crystal super alloy just must adopt the seed crystal method to obtain the monocrystalline of other orientations.In the conventional art, usually seed crystal directly is communicated with the foundry goods die cavity, though can save material usage a little, and the shell structure is also simpler, causes seed crystal all fusing or single crystal growth process unstability easily, has reduced the success ratio of growing single-crystal.
Summary of the invention
In order to overcome the low deficiency of traditional seed crystal technology growth success ratio, the object of the present invention is to provide a kind of seed crystal method solidifying orientation origination end and application thereof, it is legal to solidifying preparation non-[001] oriented single crystal superalloy that crystal separation method structure shell is used for seed crystal, pack into the method for shell of the shell of new texture and seed crystal can be avoided seed crystal all fusings or because of oxidation causes the shortcoming of stray crystal forming core easily, significantly improves the success ratio of growing single-crystal.
For addressing the above problem, the present invention is based on common crystal separation method shell, (1.5-2.5 that the diameter of its cylindric graining section is reduced to spiral crystal selector diameter doubly less than the analog value of the brilliant shell of common choosing to make the diameter of cylindric graining section,), seed crystal is put into the graining section of shell in the mode of postposition, the height of seed crystal is less than the height (the seed crystal height is 0.5-0.8 a times of graining section height) of cylinder graining section, the seed crystal bottom is contacted with crystallizer, is that experiment material is carried out directional freeze with congruent mother alloy.The present invention is convenient to control seed crystal upper end generating unit fractional melting by selecting rational seed size and structure proportion, thereby is that nuclear carries out crystal growth with the seed crystal, and the spirane structure of crystal selector can be suppressed at the growth of the stray crystal that the seed crystal edge forms simultaneously.Thereby can realize with select the crystal formation shell improve seed crystal legal in process of setting the success ratio of growing single-crystal.
Concrete technical scheme is: a kind of seed crystal method solidifying orientation origination end, the basic structure that it has conventional screw selecting crystal formation shell comprises that the cylindric nucleation machine of lower end, the spirrillum crystal selector that links to each other with the nucleation machine top, crystal selector upper end are connected with the die cavity of single crystal rod or single crystal casting; The diameter of cylindric graining section is 1.5-2.5 a times of spiral crystal selector diameter, and the seed crystal height is 0.5-0.8 a times of graining section height.
The radius of described nucleation machine is 4-6mm, highly is 18-22mm; The spiral crystal selector be 7-9mm around radius-of-curvature, lead angle is 25-30 °, spiral surrounding 450-720 degree.
During application, prepare the shell of orientation origination end after, again seed crystal is put into the graining section of shell, the seed crystal bottom contacts with crystallizer, is that experiment material is carried out directional freeze with congruent mother alloy.
Advantage of the present invention is: be convenient to control seed crystal generating unit fractional melting, help melt and seed crystal and merge.Seed crystal generation oxidation helped suppressing the stray crystal forming core when dress can be exempted shell and fires behind the seed crystal.Can significantly improve the success ratio of seed crystal method growing single-crystal.
Its reason is as follows:
When 1) seed crystal directly was communicated with the foundry goods die cavity, seed crystal was because touch a large amount of high-temperature fusants, if when bottom heat conduction is not smooth, all melted or formed stray crystal because of thermograde is too low through regular meeting, finally caused single crystal growing to be failed.Adopt revised when selecting the crystal formation shell with seed crystal method shell, can be by ratio and the seed crystal height and the brilliant section of choosing relative size highly of adjusting the brilliant section diameter of graining section diameter and screw selecting, can control the relative quantity of injecting melt in the brilliant section of choosing, be convenient to make seed crystal generating unit fractional melting, spiral section also can be eliminated the issuable stray crystal in seed crystal edge simultaneously.
2) shell fire finish after, again seed crystal is put into shell, to the oxidation of seed crystal, thereby can improve the fusion of seed crystal and melt in the time of can exempting shell and fire, and can reduce the probability that oxide compound becomes the stray crystal core.
When 3) seed crystal directly was communicated with the foundry goods die cavity, melt formed bigger surging force to seed crystal in the casting cycle, caused seed crystal loosening easily, caused melt along under the slit flow between seed crystal and shell, finally caused the single crystal growing failure.And adopt to revise select the crystal formation shell time, the brilliant section of screw selecting can change the direction of melt flow, slows down the impact to seed crystal, thereby helps to improve the success ratio of single crystal growing.
Description of drawings
The structural representation of Fig. 1 seed crystal and formwork assembly.
The brilliant section of a Fig. 2 graining section and screw selecting diameter ratio is 1.5 and seed crystal height when being 0.5 times of graining section, the longitudinal tissue's synoptic diagram after [111] monocrystalline is successfully grown.
The brilliant section of a Fig. 3 graining section and screw selecting diameter ratio is 1.5 and seed crystal height when being 0.8 times of graining section, after [111] monocrystalline is successfully grown laterally to organizing synoptic diagram.
The brilliant section of a Fig. 4 graining section and screw selecting diameter ratio is 1.5 and seed crystal height when being 0.5 times of graining section, and [011] monocrystalline is successfully grown by the longitudinal tissue's synoptic diagram behind the crystal selector.
The brilliant section of a Fig. 5 graining section and screw selecting diameter ratio is 1.5 and seed crystal height when being 0.8 times of graining section, after [011] monocrystalline is successfully grown laterally to organizing synoptic diagram.
Embodiment
The directional freeze origination end that the present invention matches with ceramic shell for a kind of seed crystal is used to produce the single crystal alloy material and the part of different orientation; The seed crystal origination end that adopts is size and the crystal separation method shell of structure proportion through revising, and is just legal to solidifying with being used for seed crystal after the correction of crystal separation method shell;
Crystal separation method is according to crystal preferential growth principle needs seed crystal and directly obtain the technological method of [001] oriented single crystal not.The origination end of crystal separation method shell commonly used is: what contact with aqueous cold plate bottom is cylindric nucleation machine, and its effect is the columnar grain that forms a plurality of [001] orientations that are arranged in parallel.What link to each other with cylinder nucleation machine top is one section spirrillum crystal selector, and its effect is that a crystal grain in a plurality of [001] crystal grain that only allows in the nucleation machine passes through.What the crystal selector upper end linked to each other is exactly the die cavity of single crystal rod or single crystal casting.For columnar grain that forms sufficient amount in nucleation machine and the steadiness that strengthens wax pattern, the 3-4 that typically has a diameter from spiral crystal selector diameter of cylinder nucleation machine doubly.
The diameter of the cylinder graining section of normal crystal separation method shell is more than 4 times of diameter of the brilliant section of screw selecting, if directly be used as the shell of seed crystal, because the seed crystal diameter will cause melt solidifying too fast and can not make seed crystal play the effect of crystallization nuclei too greatly, seed size too greatly also can make its preparation difficulty increase simultaneously.If graining section diameter is too little, the effect that will cause the brilliant section of screw selecting to suppress stray crystal weakens, and the while also can cause wax pattern structural stability difference and increase the difficulty of shell preparation.The diameter of graining section is preferably 1.5-2.5 times of the brilliant section of screw selecting diameter.
When seed crystal height during near cylinder graining section height, covering the vertical melt volume of seed crystal below the brilliant section of screw selecting will be very little, is difficult to fully merge with seed crystal because of carrying shortage of heat.Spend when low when the seed crystal height, stay too big growing space will for issuable stray crystal,, thereby can reduce the success ratio of growing single-crystal even also may it is superseded by the brilliant section of screw selecting.Best seed crystal height is 0.5-0.8 a times of cylindric graining section.
As shown in Figure 1, comprise that the cylindric nucleation machine 1 of lower end, the spirrillum crystal selector 2 that links to each other with nucleation machine 1 top, crystal selector 2 upper ends are connected with the die cavity 3 of single crystal rod or single crystal casting, the diameter of cylindric graining section is 1.5-2.5 a times of spiral crystal selector diameter, and the seed crystal height is 0.5-0.8 a times of graining section height;
The radius of described nucleation machine is 5mm, highly is 20mm; The spiral crystal selector be 8mm around radius-of-curvature, lead angle is 28.7 °, spiral surrounding 540 degree.
The single crystal super alloy of getting a kind of low-cost and high-performance passes through seed crystal method growing single-crystal in industrial large-scale two-region heating ZGD-2 vacuum single crystal growing furnace, selected the seed crystal of 2 kinds of different sizes altogether for use, and the seed crystal of every kind of size comprises [111] and [011] two kind of orientation again.
1. cutting diameter from [001] single crystal super alloy that crystal separation method is produced is that 10mm highly is cylindrical [111] seed crystal of 10mm.After ceramic shell is fired into, seed crystal is inserted in its graining section, be that experiment material is carried out directional freeze with congruent mother alloy, can obtain monocrystalline by the growth of [111] seed crystal direction.As shown in Figure 2.
2. from [001] single crystal super alloy that crystal separation method is produced, cut 10mm and highly be 15mm cylindrical [111] seed crystal.Adopting the mode of adorning behind the seed crystal that it is inserted in the shell graining section, is that experiment material is carried out directional freeze with congruent mother alloy, can obtain the monocrystalline by the growth of [111] seed crystal direction.As shown in Figure 3.
3. cutting diameter from [001] single crystal super alloy that crystal separation method is produced is that 10mm highly is cylindrical [011] seed crystal of 10mm.After ceramic shell is fired into, seed crystal is inserted in its graining section, be that experiment material is carried out directional freeze with congruent mother alloy, can obtain monocrystalline by the growth of [011] seed crystal direction.As shown in Figure 4.
4. cutting diameter from [001] single crystal super alloy that crystal separation method is produced is that 10mm highly is cylindrical [011] seed crystal of 15mm.After ceramic shell is fired into, seed crystal is inserted in its graining section, be that experiment material is carried out directional freeze with congruent mother alloy, can obtain monocrystalline by the growth of [011] seed crystal direction.As shown in Figure 5.
Claims (3)
1. seed crystal method solidifying orientation origination end, it has the basic structure of conventional screw selecting crystal formation shell, comprise that the cylindric nucleation machine (1) of lower end, the spirrillum crystal selector (2) that links to each other with nucleation machine (1) top, crystal selector (2) upper end are connected with the die cavity (3) of single crystal rod or single crystal casting, it is characterized in that: the diameter of cylindric graining section is 1.5-2.5 a times of spiral crystal selector diameter, and the seed crystal height is 0.5-0.8 a times of graining section height.
2. according to the described seed crystal method of claim 1 solidifying orientation origination end, it is characterized in that: the radius of described nucleation machine is 4-6mm, highly is 18-22mm; The spiral crystal selector be 7-9mm around radius-of-curvature, lead angle is 25-30 °, spiral surrounding 450-720 degree.
3. the application of the described seed crystal method of claim 1 solidifying orientation origination end, it is characterized in that: after preparing the shell of orientation origination end, seed crystal is put into the graining section of shell, the seed crystal bottom contacts with crystallizer, is that experiment material is carried out directional freeze with congruent mother alloy again.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005101367150A CN100430530C (en) | 2005-12-27 | 2005-12-27 | Seed crystal method of solidifying orientation origination end and application thereof |
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| CNB2005101367150A CN100430530C (en) | 2005-12-27 | 2005-12-27 | Seed crystal method of solidifying orientation origination end and application thereof |
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| CN1990915A true CN1990915A (en) | 2007-07-04 |
| CN100430530C CN100430530C (en) | 2008-11-05 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834990A (en) * | 2014-03-20 | 2014-06-04 | 北京科技大学 | Crystal selector for preparing directional solidification material and application thereof |
| CN106011996A (en) * | 2016-08-04 | 2016-10-12 | 中国科学院金属研究所 | Shell and method for producing large-size nickel-based monocrystalline high temperature alloy bars |
| CN109695054A (en) * | 2018-11-28 | 2019-04-30 | 中国科学院金属研究所 | Monocrystalline part 3 D tropism for seed-grain method controllable directional solidification origination end and directional freeze method |
| CN111168004A (en) * | 2020-01-20 | 2020-05-19 | 西安交通大学 | Method for forming single crystal part by gel casting integrated casting based on spiral crystal selector with seed crystal block embedded structure |
| CN112974731A (en) * | 2021-05-11 | 2021-06-18 | 中国航发北京航空材料研究院 | Method for preparing single crystal superalloy by repeatedly using solid solution state columnar crystal |
| CN113560544A (en) * | 2021-06-28 | 2021-10-29 | 深圳市万泽中南研究院有限公司 | Directional blade and columnar crystal structure optimization method thereof |
| CN113976864A (en) * | 2021-12-29 | 2022-01-28 | 成都航宇超合金技术有限公司 | Device and method for reducing generation of blade mixed crystals by adopting gas film method |
| CN114622275A (en) * | 2022-03-04 | 2022-06-14 | 潍坊科技学院 | Seed crystal for directional solidification of single crystal high temperature alloy casting and preparation and application thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6035924A (en) * | 1998-07-13 | 2000-03-14 | Pcc Airfoils, Inc. | Method of casting a metal article |
| CN1209505C (en) * | 2002-07-04 | 2005-07-06 | 中国科学院金属研究所 | Method for controlling transverse crystal orientation of metal monocrystal |
| CN1246507C (en) * | 2003-07-16 | 2006-03-22 | 中国科学院金属研究所 | Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
-
2005
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834990A (en) * | 2014-03-20 | 2014-06-04 | 北京科技大学 | Crystal selector for preparing directional solidification material and application thereof |
| CN103834990B (en) * | 2014-03-20 | 2016-06-29 | 北京科技大学 | A kind of crystal selector preparing unidirectional solidification material and application thereof |
| CN106011996A (en) * | 2016-08-04 | 2016-10-12 | 中国科学院金属研究所 | Shell and method for producing large-size nickel-based monocrystalline high temperature alloy bars |
| CN106011996B (en) * | 2016-08-04 | 2019-06-18 | 中国科学院金属研究所 | A kind of shell and method preparing large scale nickel-base high-temperature single crystal alloy bar |
| CN109695054A (en) * | 2018-11-28 | 2019-04-30 | 中国科学院金属研究所 | Monocrystalline part 3 D tropism for seed-grain method controllable directional solidification origination end and directional freeze method |
| CN111168004B (en) * | 2020-01-20 | 2021-03-23 | 西安交通大学 | Method for forming single crystal part by gel casting integrated casting based on spiral crystal selector with seed crystal block embedded structure |
| CN111168004A (en) * | 2020-01-20 | 2020-05-19 | 西安交通大学 | Method for forming single crystal part by gel casting integrated casting based on spiral crystal selector with seed crystal block embedded structure |
| CN112974731A (en) * | 2021-05-11 | 2021-06-18 | 中国航发北京航空材料研究院 | Method for preparing single crystal superalloy by repeatedly using solid solution state columnar crystal |
| CN112974731B (en) * | 2021-05-11 | 2022-04-08 | 中国航发北京航空材料研究院 | Method for preparing single crystal superalloy by repeatedly using solid solution state columnar crystal |
| CN113560544A (en) * | 2021-06-28 | 2021-10-29 | 深圳市万泽中南研究院有限公司 | Directional blade and columnar crystal structure optimization method thereof |
| CN113560544B (en) * | 2021-06-28 | 2022-10-25 | 深圳市万泽中南研究院有限公司 | Directional blade and columnar crystal structure optimization method thereof |
| CN113976864A (en) * | 2021-12-29 | 2022-01-28 | 成都航宇超合金技术有限公司 | Device and method for reducing generation of blade mixed crystals by adopting gas film method |
| CN114622275A (en) * | 2022-03-04 | 2022-06-14 | 潍坊科技学院 | Seed crystal for directional solidification of single crystal high temperature alloy casting and preparation and application thereof |
| CN114622275B (en) * | 2022-03-04 | 2024-01-26 | 潍坊科技学院 | Seed crystal for directional solidification of monocrystalline superalloy casting, and preparation and application thereof |
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