CN1246507C - Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof - Google Patents
Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof Download PDFInfo
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- CN1246507C CN1246507C CN 03133733 CN03133733A CN1246507C CN 1246507 C CN1246507 C CN 1246507C CN 03133733 CN03133733 CN 03133733 CN 03133733 A CN03133733 A CN 03133733A CN 1246507 C CN1246507 C CN 1246507C
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- 239000013078 crystal Substances 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000005266 casting Methods 0.000 title abstract 5
- 238000010276 construction Methods 0.000 title 1
- 230000000977 initiatory effect Effects 0.000 claims abstract description 34
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000009415 formwork Methods 0.000 claims description 38
- 229910000601 superalloy Inorganic materials 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000002401 inhibitory effect Effects 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 210000004940 nucleus Anatomy 0.000 description 4
- 210000001787 dendrite Anatomy 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 210000001519 tissue Anatomy 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
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Abstract
The present invention relates to a technology for preparing a single crystal high-temperature alloy and especially provides a method for inhibiting the formation and the growth of a stray crystal at the initiating end of a seed crystal and the casting case structure thereof. The method based on a seed crystal method comprises the following steps: putting the seed crystal in the casting case in advance; arranging a neck shrinking structure at the initiating end for inhibiting the stray crystal formed at the initiating end of the seed crystal in growth; growing alloy melt into a single crystal on the unmelted interface of the seed crystal in the mode of epitaxial growth. The casting case structure is used for putting the seed crystal in advance. One neck shrinking structure is arranged at the bottom of the casting case over the initiating position of the seed crystal in growth. The present invention combines the design of the initiating end in the seed crystal method in the past with the design of a neck shrinking crystal-selecting device for inhibiting and removing the stray crystal in the initiating process of the single crystal growth, guaranteeing the obtainment of the required crystal orientation and improving the success rate of the single crystal growth.
Description
Technical field
The present invention relates to the technology of preparing of single crystal super alloy, provide a kind of seed crystal initiating terminal to suppress method and formwork structure that stray crystal forms and grows up especially.
Background technology
In order to obtain single crystal, at first in metal melt, form a monocrystalline nuclear, can introduce seed crystal or spontaneous nucleation, then on the nucleus melt interface, constantly grow single crystal.The method that obtains single nucleus has two kinds usually, i.e. crystal separation method and seed crystal method.For single crystal super alloy, these two kinds of methods respectively have relative merits, complement each other, and overlook either of the two.Crystal separation method need not loaded down with trivial details seed crystal preparation process, and the yield rate height, being widely used, it can only produce [001] oriented single crystal based on crystallization preferential growth principle, the may command foundry goods vertically with＜001 deviation within 15 °, but the horizontal orientation of uncontrollable foundry goods.Adopt the seed crystal method can obtain the monocrystalline of any direction, this method is to change crystal selector into seed crystal with initiating terminal.The bottommost that seed crystal is placed in formwork contacts with crystallizer, and makes it become unique part that alloy contacts with crystallizer; The alloy melt that will have certain superheating temperature is poured into formwork, makes the seed crystal partial melting, then with formwork by in the stove outwards pull make the alloy cooling, alloy melt from the crystal block section epitaxy of remnants, be frozen into the 3 D tropism single crystal identical with seed crystal.Seed crystal is the ready-made crystal with required orientation, should be by institute's cast alloy, and perhaps the alloy that fusing point is high or more suitable than institute cast alloy is made.
The structure design of existing seed crystal method growing single-crystal coupon formwork 1 as shown in Figure 1, in the design of Fig. 1, the mode of putting into of seed crystal 2 has: a kind of for presetting seed crystal 2, just when the making wax-pattern, seed crystal 2 directly is welded in (Fig. 2-1) on the wax-pattern; A kind of is back dress seed crystal 2, and formwork 1 is divided into again and alundum tube 3 (Fig. 2-2) is housed and does not adorn 3 two kinds of alundum tubes (Fig. 2-3).When adopting seed crystal method growing single-crystal, when the higher but melt portions of seed crystal 2 more after a little while, form the angle of cut between seed crystal 2 and the formwork 1, though the initiating terminal at seed crystal 2 adopts alundum tube 3 can guarantee that seed crystal 2 contacts with the tight of alundum tube 3, but form angle or step between alundum tube 3 and the formwork 1 easily, according to crystal forming core theory, in angle or step place forming core merit minimum, alloy liquid is easy to form core and grow up the integrity of destruction monocrystalline at this.When not presetting seed crystal 2, seed crystal 2 and formwork 1 excessive clearance cause alloy solution along under the slit flow easily during cast, when the molten steel that flows down more after a little while, under the cooling of seed crystal 2,, thereby introduce stray crystal easily at the gap location forming core of seed crystal 2 and formwork 1 and grow up; When the alloy melt that flows down along slit place more for a long time, this moment, seed crystal 2 was bigger with the gap of formwork 1, it is less to rub, alloy liquid holds up seed crystal 2 easily, seed crystal 2 breaks away from crystallizer, and the heat radiation approach is cut off, and causes seed crystal 2 all to melt, lose the effect of the monocrystalline forming core core of seed crystal, cause seeded growth to lose efficacy.
Summary of the invention
In order to overcome above-mentioned deficiency, the purpose of this invention is to provide the seed crystal initiating terminal that a kind ofly has seeded growth initiating terminal reasonable in design, can improve the seeded growth success ratio and suppress method and the formwork structure that stray crystal forms and grows up.
To achieve these goals, technical solution of the present invention is: based on the seed crystal method, preset seed crystal in formwork, establish a necking down structure at the initiating terminal of seeded growth, suppress the stray crystal of the initiating terminal formation of seeded growth, make alloy melt on the not fusing interface of seed crystal, grow up to monocrystalline in epitaxially grown mode;
The described formwork structure that the seed crystal initiating terminal suppresses stray crystal formation and grows up in the single crystal super alloy preparation for presetting the formwork structure of seed crystal, is established a necking down structure, the top in the initial position of seeded growth in the formwork bottom;
The eck size of described necking down structure can be 80%～100% of seed crystal diameter; Described necking down structure the position on the formwork be located at the initial position of seeded growth, formwork bottom above 10～15mm place.
Compared with prior art, the present invention has following advantage:
The present invention combines the design of in the past seed crystal method initiating terminal design with the necking down crystal selector, establish a necking down structure at initiating terminal, thereby so both the stray crystal that can occur the initiating process of single crystal growing suppressed and got rid of, can guarantee to obtain required crystalline orientation again, improve the success ratio of single crystal growing.
Description of drawings
Fig. 1 is a seed crystal method formwork structure of the prior art.
Fig. 2-1 is the formwork structure of pre-buried seed crystal in the prior art.
Fig. 2-2 is for having the formwork structure of alundum tube in the prior art.
Fig. 2-3 is a seed crystal method formwork structure of the prior art.
Fig. 3 suppresses the used formwork structure of method that stray crystal forms and grows for the initiating terminal of seeded growth of the present invention.
Fig. 4 is the brilliant initiating terminal tissue of one embodiment of the invention seed crystal method choosing.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further detail.
Embodiment
The initiating terminal of seeded growth of the present invention suppresses the method that stray crystal forms and grows, be based on the seed crystal method, establish a necking down structure at initiating terminal, and adopt the method that presets seed crystal to insert seed crystal, be suppressed at the formation of seeded growth initiating terminal stray crystal and grow up, make alloy melt epitaxially grown mode on the not fusing interface of seed crystal grow up to monocrystalline.
As shown in Figure 3, the initiating terminal of described seeded growth suppresses the used formwork structure of method that stray crystal forms and grows, be formwork 1 structure that presets seed crystal 2, above the initial position of seeded growth, formwork 1 bottom, establish a necking down structure, guarantee that seed crystal 2 suppresses with the tight stray crystal that contacts and may generate initiating terminal of formwork 1, make one of the section start formation of seeded growth can impel the zone that on the nucleus melt interface, constantly grows single crystal.
Wherein: the diameter of the described neck down portions eck of present embodiment size and seed crystal identical (or be slightly less than the diameter of seed crystal, as get the seed crystal diameter 80%).10～15mm place above described necking down structure is located at formwork 1 bottom seed crystal in the position on the formwork 1 (present embodiment is the 15mm place of seed crystal top).
With regard to prior art seed crystal method growing single-crystal, though it can obtain to be orientated the higher monocrystalline of precision, success ratio is not high.This depends primarily on the initiating process of single crystal growing, because finished seeding process from seed crystal to newborn monocrystalline in initiating process, but the generation of stray crystal is often arranged easily in the initial growth process also.So-called stray crystal is meant the crystal grain of being grown up and being formed by other crystallization nucleis beyond the seed crystal, will avoid as far as possible in single crystal growing.And in the process of growth of monocrystalline, the stray crystal growth will have time enough and space, i.e. crystalline growth comprises the factor of time and space two aspects.Time factor mainly by the velocity of diffusion decision of solute, is determined by crystalline preferred orientation and direction of heat flow jointly; Space factor then depends on the form of dendrite and the space of dendritic growth, is determined by the relative position of dendrite in the crystal grain and the geometrical shape of foundry goods.Can the grow up relative position that will see dendrite of stray crystal enough restrain the growth of monocrystalline.In process of growth, if the front end of crystal growth is obstructed, then stray crystal just may be eliminated.Cardinal principle of the present invention is: at the preceding disconnected necking section that is provided with of seeded growth, the restriction seeded growth starting stage is suppressed the growth of stray crystal in the stray crystal growing space that the periphery of seed crystal forms, and makes it superseded, thereby guarantees that seed crystal is as single grain growing.
Present embodiment is got a kind of no rhenium single crystal super alloy DD98 and pass through seed crystal method growing single-crystal in industrial large-scale two-region heating ZGD-2 vacuum single crystal growing furnace, its tissue topography as shown in Figure 4, its result shows: adopt stray crystal that the present invention forms at the initiating terminal of seeded growth by bottleneck by the inhibition of success and eliminating, guaranteed the integrity of single crystal alloy, the single crystal super alloy that grows required orientation of final success.
Claims (4)
- One kind in single crystal super alloy preparation the seed crystal initiating terminal suppress the method that stray crystal forms and grows up, based on the seed crystal method, preset seed crystal in formwork, it is characterized in that: establish a necking down structure at the initiating terminal of seeded growth, suppress the stray crystal of the initiating terminal formation of seeded growth, make alloy melt on the not fusing interface of seed crystal, grow up to monocrystalline in epitaxially grown mode.
- One kind in single crystal super alloy preparation the seed crystal initiating terminal suppress the formwork structure that stray crystal forms and grows up, formwork (1) structure for presetting seed crystal (2) is characterized in that: establish a necking down structure, the top in the initial position of seeded growth in formwork (1) bottom.
- 3. suppress the formwork structure that stray crystal forms and grows up according to the described seed crystal initiating terminal of claim 2, it is characterized in that: the eck size of described necking down structure can be 80%～100% of seed crystal diameter.
- 4. suppress the formwork structure that stray crystal forms and grows up according to the described seed crystal initiating terminal of claim 2, it is characterized in that: 10～15mm place of the top at the initial position of seeded growth, formwork (1) bottom is located in the position of described necking down structure on formwork (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03133733 CN1246507C (en) | 2003-07-16 | 2003-07-16 | Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03133733 CN1246507C (en) | 2003-07-16 | 2003-07-16 | Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
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| CN1570224A CN1570224A (en) | 2005-01-26 |
| CN1246507C true CN1246507C (en) | 2006-03-22 |
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| CN 03133733 Expired - Fee Related CN1246507C (en) | 2003-07-16 | 2003-07-16 | Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100430530C (en) * | 2005-12-27 | 2008-11-05 | 中国科学院金属研究所 | Seed crystal method of solidifying orientation origination end and application thereof |
| CN102205391B (en) * | 2011-04-28 | 2012-11-28 | 上海交通大学 | Device and method for manufacturing spiral grain selection device for high-temperature alloy single crystal growth |
| CN105436478A (en) * | 2015-12-30 | 2016-03-30 | 上海大学 | Method for controlling formation of foreign crystals at variable cross section |
| CN105839186B (en) * | 2016-06-03 | 2018-07-06 | 西北工业大学 | A kind of method reused seed crystal and prepare single crystal super alloy |
| CN107354331B (en) * | 2017-07-14 | 2019-01-08 | 哈尔滨工业大学 | The method for controlling TiAl-base alloy oriented freezing organization lamellar orientation as substrate seed crystal using refractory metal |
| CN108411371B (en) * | 2018-06-04 | 2023-06-16 | 北京航空航天大学 | Mould shell for precisely controlling growth orientation of single crystal by seed crystal method and manufacturing method thereof |
| FR3095972B1 (en) * | 2019-05-13 | 2023-07-07 | Safran Aircraft Engines | Mold for manufacturing a part by metal casting and epitaxial growth and associated manufacturing process |
| CN111101193B (en) * | 2020-01-10 | 2022-01-28 | 贵阳航发精密铸造有限公司 | Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade |
| CN111139522B (en) * | 2020-02-04 | 2022-04-19 | 西北工业大学 | Method for preparing DD3 single crystal superalloy test rod by using Ni-W heterogeneous seed crystal |
| CN112453357B (en) * | 2020-11-25 | 2022-02-11 | 中国科学院金属研究所 | Method for preparing large-size single crystal blade for heavy gas turbine by using platform-shaped seed crystal |
| CN112921393A (en) * | 2021-01-22 | 2021-06-08 | 成都航宇超合金技术有限公司 | Single crystal alloy directional solidification method for reducing generation of mixed crystals and mould shell structure |
| CN112974731B (en) * | 2021-05-11 | 2022-04-08 | 中国航发北京航空材料研究院 | Method for preparing single crystal superalloy by repeatedly using solid solution state columnar crystal |
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