CN111101193B - Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade - Google Patents
Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade Download PDFInfo
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- CN111101193B CN111101193B CN202010028443.7A CN202010028443A CN111101193B CN 111101193 B CN111101193 B CN 111101193B CN 202010028443 A CN202010028443 A CN 202010028443A CN 111101193 B CN111101193 B CN 111101193B
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- crystal
- section forming
- forming cavity
- seeding section
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/22—Moulds for peculiarly-shaped castings
Abstract
The invention relates to the technical field of precision casting of blades of aero-engines, in particular to a casting seeding section forming die capable of accurately controlling the crystal orientation growth of a single crystal blade. The seed crystal extending depth of the seeding section manufactured by the die can be accurately adjusted, the crystal orientation growth of the single crystal blade can be accurately controlled in casting, the probability of mixed crystals in the single crystal seeding process is greatly reduced, the problem of mixed crystals in the seed crystal growth starting stage is effectively solved, the crystal orientation qualification rate of the blade is improved, the crystal orientation of the prepared single crystal blade is consistent with the original seed crystal orientation, and the seed crystal engineering application is realized.
Description
Technical Field
The invention relates to the technical field of precision casting of blades of aero-engines, in particular to a casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of a single crystal blade.
Background
The preparation method of the single crystal blade mainly comprises a crystal selection method and a seed crystal method, while the traditional crystal selection method for preparing the single crystal blade can only prepare orientation and cannot ensure that the growth direction of the blade is completely consistent with the direction of the stacking line, and certain angle deviation exists. The single crystal blade prepared by the seed crystal method can realize the accurate control of the crystal orientation in any direction, reduce the rejection rate of the single crystal blade and improve the service performance of the single crystal blade; but has the disadvantages of high process difficulty and temporary non-engineering application. Therefore, there is a great need for improvements and optimizations to the prior art.
Disclosure of Invention
The invention aims to provide a casting seed-guiding section forming die capable of accurately controlling the crystal orientation growth of a single crystal blade so as to achieve the purposes of good single crystal integrity, accurate control of preferred orientation and non-preferred orientation of the single crystal blade and the like in casting.
The technical scheme adopted by the invention for realizing the purpose is as follows:
the casting crystal-leading section forming die capable of accurately controlling the crystal orientation growth of the single crystal blade comprises an upper die and a lower die, wherein an ejection mechanism used for ejecting a formed crystal-leading section is arranged on the lower die, a corresponding wax injection port, a flow channel and a crystal-leading section forming cavity are arranged on the buckling surfaces of the upper die and the lower die, one end of the crystal-leading section forming cavity is communicated with the flow channel, the other end of the crystal-leading section forming cavity is communicated with a placing groove used for placing seed crystals, a spiral push rod capable of controlling the seed crystals to stretch into the crystal-leading section forming cavity is arranged at the outer end of the placing groove, and a measuring scale parallel to the placing groove is further arranged on the lower die.
Further, the screwing depth of the spiral push rod is set to be 4mm-15mm, and the measuring range of the measuring scale is larger than or equal to 15 mm.
Furthermore, the seeding section forming cavity comprises a cylindrical first-stage seeding section forming cavity, a second-stage seeding section forming cavity communicated with one end of the first-stage seeding section forming cavity, and an amplifier forming cavity communicated with the other end of the first-stage seeding section forming cavity, the end part of the second-stage seeding section forming cavity is communicated with the flow channel, and the end part of the amplifier forming cavity is communicated with the placing groove.
Furthermore, the end part of the amplifier molding cavity is in a smooth concave spherical shape, and the spherical radius of the amplifier molding cavity is R12 mm.
Further, the length of the first-stage seeding section forming cavity is 12 mm; the length of the second-stage seeding section forming cavity is 20 mm; the length of the amplifier forming cavity is one third of the length of the seed crystal.
Furthermore, the middle part of the second-stage seeding section forming cavity shrinks inwards, the diameter of one end of the second-stage seeding section forming cavity, which is communicated with the runner, is 14mm, one end of the second-stage seeding section forming cavity, which is communicated with the first-stage seeding section forming cavity, is in arc transition, and the radius of the transition arc is R8 mm.
Further, the taper of the second-stage seeding section forming cavity is 10 degrees.
Has the advantages that: the seed crystal extending depth of the seeding section manufactured by the die can be accurately adjusted, the crystal orientation growth of the single crystal blade can be accurately controlled in casting, the probability of mixed crystals in the single crystal seeding process is greatly reduced, the problem of mixed crystals in the initial growth stage of the seed crystal can be effectively solved, the crystal orientation qualification rate of the blade is improved, the crystal orientation of the prepared single crystal blade is consistent with the original seed crystal orientation, and the seed crystal engineering application is realized.
Drawings
FIG. 1 is a schematic structural diagram of a lower mold in an embodiment of the present invention;
FIG. 2 is a schematic diagram of the ejection state of the ejection mechanism according to the embodiment of the present invention;
fig. 3 is a schematic structural diagram of a formed seeding segment according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings, but the scope of the claimed invention is not limited thereto.
Referring to fig. 1-3, the casting and crystal-leading segment forming die capable of accurately controlling the crystal orientation growth of a single crystal blade comprises an upper die and a lower die 1, wherein die positioning ports 15 are formed at four corners of the lower die 1, and die positioning blocks matched with the die positioning ports 15 are integrally arranged at four corners of the upper die, so that the upper die and the lower die 1 are accurately matched; the lower die 1 is provided with an ejection mechanism 4 for ejecting the formed seeding section so as to eject the formed seeding section quickly after forming; the mould comprises an upper mould and a lower mould 1, wherein the buckling surfaces of the upper mould and the lower mould 1 are provided with a corresponding wax injection port 11, a runner 12 and a seeding section forming cavity 13, one end of the seeding section forming cavity 13 is communicated with the runner 12, the other end of the seeding section forming cavity is communicated with a placing groove for placing seed crystals 2, the outer end of the placing groove is provided with a spiral push rod 3 capable of controlling the seed crystals 2 to stretch into the seeding section forming cavity 13, and the lower mould 1 is further provided with a measuring ruler 14 parallel to the placing groove.
When the seeding section is manufactured, the seed crystal 2 is placed in the placing groove on the lower die 1, then one end of the seed crystal 2 is pushed by the spiral push rod 3 to extend into the seeding section forming cavity 13, the extending depth can be accurately read by the measuring scale 14 and controlled according to the reference, the upper die is closed after the adjustment is finished, liquid wax is injected from the wax injection port 11, the liquid wax flows into the seeding section forming cavity 13 through the flow passage 12, after cooling and forming, the upper die can be opened, the molded seeding section 5 is ejected by the ejection mechanism 4, at the moment, one end of the seed crystal 2 is molded in one end of the waxy seeding section 5, and the extending depth can be accurately adjusted by referring to the measuring scale 14, after the seeding section 5 and the blade wax mould are bonded to form a mould and dewaxed in the subsequent process, the seed crystal 2 starts to grow from a cavity part formed after the seeding section is dewaxed, and gradually fills the whole blade cavity, so that the casting of the single crystal blade is realized; the extending depth of the seed crystal 2 can be accurately adjusted through the seed crystal guiding section manufactured by the die, so that the problem of mixed crystals at the initial growth stage of the seed crystal can be effectively solved, the orientation qualified rate of the leaf crystal is improved, and the engineered application of the seed crystal is realized.
On the basis of the previous embodiment, the precession depth of the spiral push rod 3 is set to be between 4mm and 15mm, the measuring scale 14 has a measuring range larger than or equal to 15mm, the seed crystal can be pushed into the seeding section forming cavity 13 by 4mm to 15mm through the spiral push rod 3, the specific extending depth is determined according to the required process, one end of the seed crystal 2 is connected with the spiral push rod, and the other end of the seed crystal extends into the seeding section forming cavity 13, so that the seed crystal can be fixed in the seeding section 5 of wax according to the required process depth after the seed crystal is formed.
On the basis of the foregoing embodiment, the seeding section forming cavity 13 includes a cylindrical first-stage seeding section forming cavity 131, a second-stage seeding section forming cavity 132 communicated with one end of the first-stage seeding section forming cavity 131, and an amplifier forming cavity 133 communicated with the other end of the first-stage seeding section forming cavity 131, the end of the second-stage seeding section forming cavity 132 is communicated with the runner 12, and the end of the amplifier forming cavity 133 is communicated with the placing groove, so that the molded seeding section 5 includes the first-stage seeding section 51, the second-stage seeding section 52, and the amplifier 53, which is more convenient for crystal growth after shell manufacturing.
Specifically, the end of the amplifier molding cavity 133 is a smooth concave spherical surface, the spherical radius of the amplifier molding cavity is R12mm, and the length of the first-stage crystal-pulling section molding cavity 131 is 12 mm; the length of the second-stage seeding section forming cavity 132 is 20 mm; the length of the amplifier molding cavity 133 is one third of the length of the seed crystal 2; the middle part of the second-stage seeding section forming cavity 132 is contracted inwards, the diameter of one end of the second-stage seeding section forming cavity communicated with the flow channel 12 is 14mm, one end of the second-stage seeding section forming cavity communicated with the first-stage seeding section forming cavity 131 is in arc transition, and the radius of the transition arc is R8 mm. The dimensions of the thus formed seeding segment 5 are as follows: the end of the amplifier 53 is spherical with a spherical radius R12mm, the whole length of the amplifier 53 is one third of the length of the seed crystal, the length of the first-stage crystal-leading section 51 is 12mm, the length of the second-stage crystal-leading section 52 is 20mm, the middle part of the second-stage crystal-leading section 52 shrinks inwards, one end of the first-stage crystal-leading section 51 is transited to the first-stage crystal-leading section 51 by the cambered surface of R8mm, and the end-face seed crystal at the other end is 14mm, so that the formed crystal-leading section 5 is beneficial to crystal growth when being used for shell making and casting, the crystal growth quality is improved, and the casting quality is further improved.
In the foregoing embodiment, the taper of the second-stage seeding section forming cavity 132 is 10 ° to ensure that the formed seeding section 5 has a 10 ° taper.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (2)
1. The casting crystal-leading section forming die capable of accurately controlling the crystal orientation growth of a single crystal blade comprises an upper die and a lower die (1), wherein an ejection mechanism (4) for ejecting a formed crystal-leading section is arranged on the lower die (1), and the casting crystal-leading section forming die is characterized in that a corresponding wax injection port (11), a runner (12) and a crystal-leading section forming cavity (13) are arranged on the buckling surfaces of the upper die and the lower die (1), one end of the crystal-leading section forming cavity (13) is communicated with the runner (12), the other end of the crystal-leading section forming cavity is communicated with a placing groove for placing a seed crystal (2), a spiral push rod (3) capable of controlling the seed crystal (2) to stretch into the crystal-leading section forming cavity (13) is arranged at the outer end of the placing groove, and a measuring scale (14) parallel to the placing groove is further arranged on the lower die (1); the precession depth of the spiral push rod (3) is set to be between 4mm and 15mm, and the measuring range of the measuring scale (14) is larger than or equal to 15 mm; the seeding section forming cavity (13) comprises a cylindrical first-stage seeding section forming cavity (131), a second-stage seeding section forming cavity (132) communicated with one end of the first-stage seeding section forming cavity (131), and an amplifier forming cavity (133) communicated with the other end of the first-stage seeding section forming cavity (131), the end part of the second-stage seeding section forming cavity (132) is communicated with the runner (12), and the end part of the amplifier forming cavity (133) is communicated with the placing groove; the end part of the amplifier molding cavity (133) is in a smooth concave spherical shape, and the spherical radius of the amplifier molding cavity is R12 mm; the length of the first-stage seeding section forming cavity (131) is 12 mm; the length of the second-stage seeding section forming cavity (132) is 20 mm; the length of the amplifier molding cavity (133) is one third of the length of the seed crystal (2); the middle part of the second-stage seeding section forming cavity (132) shrinks inwards, the diameter of one end of the second-stage seeding section forming cavity communicated with the flow channel (12) is 14mm, one end of the second-stage seeding section forming cavity communicated with the first-stage seeding section forming cavity (131) is in arc transition, and the radius of the transition arc is R8 mm.
2. The casting seeding section forming die capable of precisely controlling the crystal orientation growth of the single crystal blade according to claim 1, wherein the taper of the secondary seeding section forming cavity (132) is 10 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010028443.7A CN111101193B (en) | 2020-01-10 | 2020-01-10 | Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010028443.7A CN111101193B (en) | 2020-01-10 | 2020-01-10 | Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade |
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| Publication Number | Publication Date |
|---|---|
| CN111101193A CN111101193A (en) | 2020-05-05 |
| CN111101193B true CN111101193B (en) | 2022-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010028443.7A Active CN111101193B (en) | 2020-01-10 | 2020-01-10 | Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117444140B (en) * | 2023-12-22 | 2024-03-26 | 中国航发北京航空材料研究院 | Secondary orientation controllable polycrystalline test plate wax mould and preparation method of wax mould |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4714101A (en) * | 1981-04-02 | 1987-12-22 | United Technologies Corporation | Method and apparatus for epitaxial solidification |
| CN1570224A (en) * | 2003-07-16 | 2005-01-26 | 中国科学院金属研究所 | Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
| CN106945205A (en) * | 2017-03-14 | 2017-07-14 | 株洲中航动力精密铸造有限公司 | Forming die for wax pattern |
| CN108411371A (en) * | 2018-06-04 | 2018-08-17 | 北京航空航天大学 | A kind of seed-grain method crystal growth orientation accurately controls formwork and its manufacturing method |
| CN108745433A (en) * | 2018-07-23 | 2018-11-06 | 谱尼测试集团深圳有限公司 | A kind of wide-range high-precision pipettor |
-
2020
- 2020-01-10 CN CN202010028443.7A patent/CN111101193B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4714101A (en) * | 1981-04-02 | 1987-12-22 | United Technologies Corporation | Method and apparatus for epitaxial solidification |
| CN1570224A (en) * | 2003-07-16 | 2005-01-26 | 中国科学院金属研究所 | Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
| CN106945205A (en) * | 2017-03-14 | 2017-07-14 | 株洲中航动力精密铸造有限公司 | Forming die for wax pattern |
| CN108411371A (en) * | 2018-06-04 | 2018-08-17 | 北京航空航天大学 | A kind of seed-grain method crystal growth orientation accurately controls formwork and its manufacturing method |
| CN108745433A (en) * | 2018-07-23 | 2018-11-06 | 谱尼测试集团深圳有限公司 | A kind of wide-range high-precision pipettor |
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| CN111101193A (en) | 2020-05-05 |
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