CN1209505C - Method for controlling transverse crystal orientation of metal monocrystal - Google Patents
Method for controlling transverse crystal orientation of metal monocrystal Download PDFInfo
- Publication number
- CN1209505C CN1209505C CN 02132531 CN02132531A CN1209505C CN 1209505 C CN1209505 C CN 1209505C CN 02132531 CN02132531 CN 02132531 CN 02132531 A CN02132531 A CN 02132531A CN 1209505 C CN1209505 C CN 1209505C
- Authority
- CN
- China
- Prior art keywords
- crystal
- orientation
- metal
- thermal field
- nucleation machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The present invention relates to a technology for preparing metal single crystals, particularly to a method for controlling the transversal crystal orientation of metal single crystals. A crystal selector and a crystal generator are arranged in a single crystal furnace, single crystal castings are produced by a crystal selecting method, wherein the crystal generator adopts a rectangle or rectangular-like cross section with a pair of long and relatively parallel opposite sides. Thereby, the transversal crystal orientation of single crystals in crystal growth is controlled by introducing an additional centralization transversal thermal field, molding is carried by a conventional investment casting method, liquid metal is cast, and single crystals grow in the single crystal furnace. The present invention can control the transversal crystal orientation of single crystals by introducing the additional centralization transversal thermal field in crystal growth and combining the characteristic of the preferred orientation of crystal growth.
Description
Technical field
The present invention relates to the technology of preparing of metal single crystal, specifically a kind of control method of transverse crystal orientation of metal monocrystal.
Background technology
In the prior art, the main method of preparation metal single crystal comprises seed crystal method and crystal separation method in gradient furnace, wherein: the seed crystal method comes down to a kind of liquid metal that allows and goes up epitaxially grown method at the female sample of prefabricated monocrystalline (seed crystal), so can control the crystalline orientation of monocrystalline in theory, but the seed crystal method needs prefabricated seed crystal, and need complicated seed crystal orientation to measure and seed crystal processing, and complex process, processing condition are strict; Crystal separation method then is the crystallisation process that directly utilizes liquid metal itself, uses specific crystal selector to select growing single-crystal, need not prefabricated in advance single crystal seed, so technology is simple, be easy to control, and become the main method of engineering with single crystal preparation.Be [001] orientation for its preferential growth direction of cubic system metal fortunately, the over-all properties optimum.Disadvantageously the monocrystalline horizontal orientation because the anisotropy of single crystal character, produces uncertainty for the horizontal physics and the mechanical property of the monocrystal material part with definite structural shape often arbitrarily.
Most simple cylinder shape nucleation machines (referring to Fig. 2 b) of selecting, the circular cross section nucleation machine obtains radial transverse temperature gradient, produces the radiativity thermal field, because its radiativity thermal field does not have definite direction, so crystal is a horizontal orientation at random.Yet can utilize nucleation machine to control its horizontal orientation few people in single crystal growing discusses.
Summary of the invention
In order to overcome above-mentioned deficiency, the purpose of this invention is to provide a kind of control method of transverse crystal orientation of metal monocrystal.
To achieve these goals, technical scheme of the present invention is: in the single crystal growing furnace system, be provided with crystal selector, nucleation machine, use crystal separation method growing single-crystal foundry goods, use the moulding of conventional investment pattern precision casting method; Described nucleation machine adopts has a pair of rectangular cross section of length, opposing parallel opposite side, thereby introduces the horizontal thermal field of additional orientation, monocrystalline transverse crystal orientation in the control crystal growing process; Moulding; The pouring liquid metal, growing single-crystal in single crystal growing furnace.
Described nucleation machine with a pair of opposite side that is long, opposing parallel, its cross-section lengths is 5～60mm, and width is 3～30mm, and it highly is 5～60mm.
The present invention is on conventional crystal separation method basis, utilization cubic system metal is in the principle that laterally also has preferential growth, additional horizontal thermal field makes the crystal grain preferential growth consistent with this thermal field direction on nucleation machine, and obtains the initial monocrystalline of predetermined lateral orientation by crystal selector.Single crystal growing after this and seed crystal method are similar, i.e. liquid metal epitaxy on initial monocrystalline, thus obtain the monocrystalline that horizontal orientation is determined.
Advantage of the present invention is:
1. because the nucleation machine size shape design of the present invention by crystal separation method (has a pair of opposite side of growing, and opposing parallel), introduce the horizontal thermal field of additional orientation, thus can binding crystal in crystal growing process the feature of growth preferred orientation, control monocrystalline transverse crystal orientation.
2. the present invention control need not to change the crystal selector structure just by simply having changed the shape of nucleation machine, also need not to change the structure of gradient furnace and increases any facility, adopts the common process method, and its method is simple, be convenient to operation.
Description of drawings
Fig. 1 a is for adopting the inventive method single crystal growth process synoptic diagram, wherein 1 ' be liquid metal, 1 " is crystal metal.
Fig. 1 b selects the unified embodiment (comprising metal single crystal, crystal selector and nucleation machine structure, and the relative phase relation of metal single crystal and nucleation machine) of crystallographic system for what adopt that the inventive method control monocrystalline horizontal orientation prepares sample.
Fig. 1 c is that the A of sample is to view among the embodiment among described Fig. 1 b, and monocrystalline dendritic orientation and macrostructure's orientation characteristic illustrate the laterally consistence of [001] orientation and the horizontal thermal field direction of nucleation machine
Fig. 2 a is thermal field orientation, a dendritic growth direction synoptic diagram in the rectangular cross section nucleation machine.
Fig. 2 b is thermal field orientation, a dendritic growth direction synoptic diagram in the cylinder shape nucleation machine in the prior art.
Fig. 3 a metallic substance cubic crystal structure (body-centered cubic BCC) synoptic diagram.
Fig. 3 b metallic substance cubic crystal structure (face-centered cubic FCC) synoptic diagram.
Embodiment
Below in conjunction with drawings and Examples in detail the present invention is described in detail.
As shown in Figure 1a, the control method of transverse crystal orientation of metal monocrystal of the present invention in single crystal growing furnace system 4, is provided with crystal selector 2, nucleation machine 3, uses crystal separation method growing single-crystal foundry goods 1; Wherein: described nucleation machine 3 adopts has a pair of length, the rectangle of opposing parallel opposite side or the method for design of class rectangular cross section nucleation machine 3, introduce the horizontal thermal field of additional orientation, monocrystalline transverse crystal orientation in the control crystal growing process, use the moulding of conventional investment pattern precision casting method, the pouring liquid metal, growing single-crystal in single crystal growing furnace.The present invention can be by introducing the horizontal thermal field of additional orientation, the feature of binding crystal growth preferred orientation, control monocrystalline transverse crystal orientation in crystal growing process.
Described nucleation machine 3 with a pair of opposite side that is long, opposing parallel, its cross section is a rectangle; When described nucleation machine 3 cross sections were rectangle, its cross-section lengths was 5～60mm, and width is 3～30mm, and nucleation machine 3 highly is 5～60mm.
Shown in Fig. 1 b, be single crystal casting 1 with TMS64 single crystal super alloy sample, nucleation machine 3 cross sections are rectangle, long 30mm, wide 8mm, nucleation machine 3 high 30mm introduce the horizontal thermal field of additional orientation; Crystal selector 2 is a spirane structure, adopts precision-investment casting ceramic shell mo(u)ld technology, growing single-crystal in ZGD-2 type gradient furnace, 1600 ℃ of melt temperatures, drawing velocity 3mm/min; Monocrystalline transverse crystal orientation result is shown in Fig. 1 c in the crystal growing process, and single crystal samples is got the square-section, and long axis direction is the pre-determined direction of horizontal [001] orientation, obtains the horizontal orientation monocrystalline consistent with pre-determined direction, and irrelevance is less than 15 °;
Among the figure 1 ' and be liquid metal, 1 " is crystal metal.
Ultimate principle of the present invention is:
Shown in Fig. 3 a, Fig. 3 b, metallic substance is mainly cubic crystal structure (body-centered cubic BCC, face-centered cubic FCC), about former point symmetry, thus X, Y, the Z direction is [001] direction, respectively quadrature.
The crystallography relation has determined that [001] direction is a crystalline preferential growth direction, and this direction speed of growth is the fastest.So when the crystal separation method growing single-crystal, always obtain [001] orientation in the maximum temperature gradient direction.And [001] orientation total energy obtains optimum mechanical properties, so the maximum temperature gradient direction during always the maximum weighted direction of foundry goods and single crystal growing is consistent.
Laterally can not add thermograde, otherwise destroy the normal growth (as crystal boundary occurring) of monocrystalline easily.Usually nucleation machine is got circular cross section, so laterally there be not the greatest gradient direction, the monocrystalline horizontal orientation is＜001〉orientation is arbitrarily on the crystal face.As mentioned above, because [001] orientation has an optimum mechanical properties, laterally whether [001] be orientated the anisotropic character of other physicals (perhaps because of) to place the direction of special requirement be starting point of the present invention.
The present invention selects for use rectangle nucleation machine 3 can obtain typical directions transverse temperature gradient, and perpendicular to long side direction thermograde maximum, this is because long limit area of dissipation maximum.According to aforementioned preferential growth principle, laterally [001] orientation crystal grain preferential growth consistent with this horizontal greatest gradient direction finally becomes the selectivity seed crystal, and obtains the single crystal casting that horizontal orientation is determined.
This additional temp gradient is not utilized and is added thermal field, and longitudinal temperature gradient is not exerted an influence.
Because laterally there is the preferential growth characteristic equally in crystal, the coupling of preferential growth characteristic and thermal field orientation causes the choice of crystals growth.Thereby infer that if add a horizontal thermal field on crystal selector, the transverse crystal orientation of single crystal will be determined.Nucleation machine 3 of the present invention has a pair of long opposite side, and the shape factor of opposing parallel, causes the orientation of lateral heat flow, constitutes typical orientation thermal field.Because crystal preferential growth character and this thermal field coupling make the horizontal preferred orientation crystal consistent with the thermal field orientation preferentially select growth.Thermal field orientation in the varying cross-section shape nucleation machine, dendritic growth direction difference, shown in Fig. 2 a, thermal field orientation, dendritic growth direction (G is the thermal field orientation) in the shape of cross section nucleation machine 3 of the present invention, compare with thermal field orientation, dendritic growth direction in the cylinder shape nucleation machine in the prior art shown in Fig. 2 b, the present invention is additional horizontal thermal field on nucleation machine 3, makes and the consistent crystal grain preferential growth of this thermal field orientation, and obtains the metal single crystal of predetermined lateral orientation by crystal selector 3.
Difference from Example 1 is: the inventive method is applied to the DD8 single crystal super alloy, and the single crystal samples cross section is circular, and nucleation machine 3 cross sections still are rectangle, long 20mm, wide 4mm, its height 40mm; But melt temperature is 1550 ℃, drawing velocity 4mm/min; Basic technology is identical with embodiment 1, and the single crystal samples that obtains laterally [001] orientation is consistent with nucleation machine 3 long axis directions, and irrelevance is less than 15 °.
Difference from Example 1 is: the inventive method is applied to the DD98 single crystal super alloy, and its cross section is circular; Nucleation machine 3 cross sections are rectangle, long 50mm, wide 20mm, its height 50mm; Other is identical with embodiment 1, and the single crystal samples that obtains laterally [001] orientation is consistent with nucleation machine 3 long axis directions, and irrelevance is less than 15 °.
Nucleation machine of the present invention 3 cross sections can also be similar orthogonal shape, and a kind of as in the shapes such as Polygons, waist shape, square is principle to have a pair of opposite side that is long, opposing parallel.
Claims (2)
1. the control method of a transverse crystal orientation of metal monocrystal is provided with crystal selector (2), nucleation machine (3) in single crystal growing furnace system (4), uses crystal separation method growing single-crystal foundry goods (1), uses the moulding of conventional investment pattern precision casting method; It is characterized in that: described nucleation machine (3) is by having the rectangular cross section of a pair of long, opposing parallel opposite side, thereby introduces the horizontal thermal field of additional orientation, monocrystalline transverse crystal orientation in the control crystal growing process, moulding; The pouring liquid metal, growing single-crystal in single crystal growing furnace.
2. according to the control method of the described transverse crystal orientation of metal monocrystal of claim 1, it is characterized in that: described nucleation machine (3) cross-section lengths is 5～60mm, and width is 3～30mm, and nucleation machine (3) highly is 5～60mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02132531 CN1209505C (en) | 2002-07-04 | 2002-07-04 | Method for controlling transverse crystal orientation of metal monocrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02132531 CN1209505C (en) | 2002-07-04 | 2002-07-04 | Method for controlling transverse crystal orientation of metal monocrystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1465754A CN1465754A (en) | 2004-01-07 |
| CN1209505C true CN1209505C (en) | 2005-07-06 |
Family
ID=34145208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02132531 Expired - Lifetime CN1209505C (en) | 2002-07-04 | 2002-07-04 | Method for controlling transverse crystal orientation of metal monocrystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1209505C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100430530C (en) * | 2005-12-27 | 2008-11-05 | 中国科学院金属研究所 | Seed crystal method of solidifying orientation origination end and application thereof |
| PL2176028T3 (en) * | 2007-06-25 | 2017-07-31 | Saint-Gobain Ceramics & Plastics, Inc. | Methods of crystallographically reorienting single crystal bodies |
| CN102205391B (en) * | 2011-04-28 | 2012-11-28 | 上海交通大学 | Device and method for manufacturing spiral grain selection device for high-temperature alloy single crystal growth |
| FR3004366B1 (en) * | 2013-04-10 | 2021-04-30 | Snecma | MONOCRISTALLINE FOUNDRY MOLD |
| CN107059133B (en) * | 2017-01-04 | 2019-06-04 | 西北工业大学 | A kind of accurate control single-crystal orientation selects crystal method |
| FR3095972B1 (en) * | 2019-05-13 | 2023-07-07 | Safran Aircraft Engines | Mold for manufacturing a part by metal casting and epitaxial growth and associated manufacturing process |
-
2002
- 2002-07-04 CN CN 02132531 patent/CN1209505C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1465754A (en) | 2004-01-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Atasoy et al. | Growth structures in aluminium-silicon alloys I. The coupled zone | |
| Cline et al. | The effect of alloy additions on the rod-plate transition in the eutectic NiAl− Cr | |
| WO2007094155A1 (en) | PROCESS FOR PRODUCING SiC SINGLE CRYSTAL | |
| JP6293803B2 (en) | Magnetic phase transformation material, method for producing magnetic phase transformation material and use of magnetic phase transformation material | |
| JPH07300667A (en) | Aluminum alloy single crystal target and its production | |
| Pettersen et al. | Crystallography of directionally solidified magnesium alloy AZ91 | |
| CN1209505C (en) | Method for controlling transverse crystal orientation of metal monocrystal | |
| US6343641B1 (en) | Controlling casting grain spacing | |
| Jaffrey et al. | The nucleation, growth morphology, and thermal stability of Sn− Zn and Al− Al 3 Ni eutectic alloys | |
| JP2006117524A (en) | High quality single crystal and its growing method | |
| CN100352075C (en) | Fe-Ga series magnetostriction material and its producing process | |
| RU2312156C2 (en) | Method of production of superpurity metals and monocrystals from them | |
| EP0059549B1 (en) | Method of casting an article | |
| JP3152971B2 (en) | Manufacturing method of high purity copper single crystal ingot | |
| Ji et al. | Preparation of Terfenol-D with precise< 110> orientation and observation of the oriented growth crystal morphology | |
| CN101570882B (en) | Crucible for preparing pure metal single crystal after orientation determination and application method thereof | |
| CN201411507Y (en) | Crucible for preparing orientation-determined pure metal single crystal | |
| JP4923253B2 (en) | Method for producing Si bulk polycrystal | |
| RU1807101C (en) | Method of growing magnetic alloy monocrystals | |
| RU2127774C1 (en) | Method of preparing high-quality monocrystalline blanks | |
| Kokta | Growth of crystals for solid state lasers | |
| JP3367069B2 (en) | Manufacturing method of giant magnetostrictive alloy rod | |
| Wang Q.-d. et al. | Step growth of a primary silicon crystal observed by decantation during centrifugal casting | |
| JPH04285090A (en) | Method for growing single crystal | |
| Chen et al. | Effects of growth rate and composition on the microstructure of directionally solidified NiMnGa alloys |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050706 |